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1. 发明申请

US20090200614A1 Transistors, Semiconductor Devices, Assemblies And Constructions 有权
标题翻译：晶体管，半导体器件，组件和结构
公开(公告)号：US20090200614A1
公开(公告)日：2009-08-13
申请号：US12424392
申请日：2009-04-15
申请人： Ted Taylor , Xiawan Yang
发明人： Ted Taylor , Xiawan Yang
IPC分类号： H01L27/088
CPC分类号： H01L21/76283
摘要： Embodiments disclosed herein include methods in which a pair of openings are formed into semiconductor material, with the openings being spaced from one another by a segment of the semiconductor material. Liners are formed along sidewalls of the openings, and then semiconductor material is isotropically etched from bottoms of the openings to merge the openings and thereby completely undercut the segment of semiconductor material. Embodiments disclosed herein may be utilized in forming SOI constructions, and in forming field effect transistors having transistor gates entirely surrounding channel regions. Embodiments disclosed herein also include semiconductor constructions having transistor gates surrounding channel regions, as well as constructions in which insulative material entirely separates an upper semiconductor material from a lower semiconductor material.
摘要翻译：本文公开的实施例包括其中一对开口形成为半导体材料的方法，其中开口通过半导体材料的部分彼此间隔开。衬套沿着开口的侧壁形成，然后半导体材料从开口的底部被各向同性地蚀刻以合并开口，从而完全地切割半导体材料段。本文公开的实施例可以用于形成SOI结构，并且在形成具有完全围绕通道区域的晶体管栅极的场效应晶体管中。本文公开的实施例还包括具有围绕通道区域的晶体管栅极的半导体结构以及其中绝缘材料将上半导体材料与下半导体材料完全分离的结构。

2. 发明申请

US20080057724A1 Selective etch chemistries for forming high aspect ratio features and associated structures 失效
标题翻译：用于形成高纵横比特征和相关结构的选择性蚀刻化学
公开(公告)号：US20080057724A1
公开(公告)日：2008-03-06
申请号：US11515435
申请日：2006-08-31
申请人： Mark Kiehlbauch , Ted Taylor
发明人： Mark Kiehlbauch , Ted Taylor
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31116
摘要： An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon species and an oxygen species. The silicon species can be generated from a silicon compound, such as SixMyHz, where “Si” is silicon, “M” is one or more halogens, “H” is hydrogen and x≧1, y≧0 and z≧0. The carbon species can be generated from a carbon compound, such as CαMβHγ, where “C” is carbon, “M” is one or more halogens, “H” is hydrogen, and α≧1, β≧0 and γ≧0. The oxygen species can be generated from an oxygen compound, such as O2, which can react with carbon to form a volatile compound.
摘要翻译：使用包括硅物质和卤化物物质以及还优选碳物质和氧物质的等离子体蚀刻化学品来选择性地蚀刻诸如氧化硅层的层间电介质层。硅物质可以由硅化合物生成，例如Si x为硅，“M”为硅，“M” “是一种或多种卤素，”H“是氢，x> = 1，y> = 0且z> = 0。碳物质可以由碳化合物生成，例如C a为C的C“C”，“M” “是一种或多种卤素，”H“是氢，α> = 1，β> = 0和γ> = 0。氧类可以由氧化合物（例如O 2）生成，其可以与碳反应形成挥发性化合物。

3. 发明申请

US20060010743A1 Adhesive shelf talker 审中-公开
标题翻译：胶带架谈话者
公开(公告)号：US20060010743A1
公开(公告)日：2006-01-19
申请号：US11195097
申请日：2005-08-01
申请人： Richard Fowler , Ted Taylor
发明人： Richard Fowler , Ted Taylor
IPC分类号： G09F3/10
CPC分类号： G09F3/10
摘要： An adhesive shelf talker is provided with upper and lower end portions that are selectively separable from one another. The upper end portion provides non-promotional product information, while the lower end portion provides the promotional information for the product. A two-part release liner is provided so that the upper end portion may adhere to a shelf edge while leaving the lower end portion of the shelf talker, which hangs below the shelf, unexposed.
摘要翻译：粘合剂架子讲话器设置有可选择性地彼此分离的上端部分和下端部分。上端部分提供非促销产品信息，而下端部分提供产品的促销信息。提供了两部分的释放衬垫，使得上端部可以粘附到搁板边缘，同时离开架子下方的搁架讲话者的下端部分未曝光。

4. 发明授权

US06326303B1 Copper electroless deposition on a titanium-containing surface 失效
标题翻译：在含钛表面上的铜无电沉积
公开(公告)号：US06326303B1
公开(公告)日：2001-12-04
申请号：US09503593
申请日：2000-02-11
申请人： Karl Robinson , Ted Taylor
发明人： Karl Robinson , Ted Taylor
IPC分类号： H01L2144
CPC分类号： H01L21/76838 , H01L21/288 , H01L21/76879 , H01L21/76885 , Y10S438/903 , Y10S438/945 , Y10S438/976
摘要： A method for depositing copper on a titanium-containing surface of a substrate is provided. The method includes forming a patterned catalyst material on the substrate, such that the titanium-containing surface is exposed in selected regions. The catalyst material has an oxidation half-reaction potential having a magnitude that is greater than a magnitude of a reduction half-reaction potential of titanium dioxide. Copper is then deposited from an electroless solution onto the exposed regions of the titanium-containing surface.
摘要翻译：提供了一种在基板的含钛表面上沉积铜的方法。该方法包括在衬底上形成图案化的催化剂材料，使得含钛表面在选定的区域中暴露。催化剂材料具有氧化半反应势，其量值大于二氧化钛的还原半反应电位的量级。然后将铜从无电溶液沉积到含钛表面的暴露区域上。

5. 发明授权

US4855098A Method of forming candles and candle composition therefor 失效
标题翻译：形成蜡烛和蜡烛成分的方法
公开(公告)号：US4855098A
公开(公告)日：1989-08-08
申请号：US133541
申请日：1987-12-16
申请人： Ted Taylor
发明人： Ted Taylor
IPC分类号： C11C5/00
CPC分类号： C11C5/002 , C11C5/006 , Y10S425/803
摘要： A candle composition consisting essentially of about 10 to 90 volume percent of a first paraffin wax with a melting point of 120.degree. to 125.degree. F. and having a maximum of 2 percent oil, about 10 to 90 volume percent of the second paraffin wax with a melting point of 125.degree. to 130.degree. F. and having a maximum of 0.2 percent oil, and about 0.1 volume percent of stretchability enhancer and a method of forming a candle therefrom. A method of forming a candle comprising submerging a plurality of wax pieces consisting essentially of about 10 to 90 volume % paraffin wax with a melting point of 120.degree. F. and having a maximum of 2.0% oil, about 10 to 90 volume % paraffin wax with a melting point of 125.degree. to 130.degree. F. and having a maximum of 0.2% oil and about 0.1 to 1.0 volume % of a stretchability enhancer in water having a temperature between about 100.degree. and 120.degree. F., permitting the pieces to soften in the water, removing the pieces from the water, joining the soft pieces together while the pieces are soft, and inserting wick material in between the joined soft pieces.
摘要翻译：一种蜡烛组合物，其基本上由约10至90体积％的熔点为120至125°F的第一石蜡和最多2％的油组成，约10至90体积％的第二种石蜡与熔点为125〜130°F，最大为0.2％的油，约0.1体积％的伸缩性增强剂及其形成蜡烛的方法。一种形成蜡烛的方法，包括浸没多个蜡片，其基本上由约10至90体积％的石蜡组成，熔点为120°F，最大为2.0％的油，约10至90体积％的石蜡熔点为125〜130°F，最高为0.2％的油和约0.1〜1.0％的伸缩性增强剂在水中的温度在约100〜120°F之间。在水中软化，将水从水中取出，将软片接合在一起，同时软件柔软，并将芯材插入连接的软片之间。

6. 发明授权

US08791506B2 Semiconductor devices, assemblies and constructions 有权
标题翻译：半导体器件，组件和结构
公开(公告)号：US08791506B2
公开(公告)日：2014-07-29
申请号：US13224804
申请日：2011-09-02
申请人： Ted Taylor , Xiawan Yang
发明人： Ted Taylor , Xiawan Yang
IPC分类号： H01L27/118 , H01L29/80
CPC分类号： H01L21/76283
摘要： Embodiments disclosed herein include methods in which a pair of openings are formed into semiconductor material, with the openings being spaced from one another by a segment of the semiconductor material. Liners are formed along sidewalls of the openings, and then semiconductor material is isotropically etched from bottoms of the openings to merge the openings and thereby completely undercut the segment of semiconductor material. Embodiments disclosed herein may be utilized in forming SOI constructions, and in forming field effect transistors having transistor gates entirely surrounding channel regions. Embodiments disclosed herein also include semiconductor constructions having transistor gates surrounding channel regions, as well as constructions in which insulative material entirely separates an upper semiconductor material from a lower semiconductor material.
摘要翻译：本文公开的实施例包括其中一对开口形成为半导体材料的方法，其中开口通过半导体材料的部分彼此间隔开。衬套沿着开口的侧壁形成，然后半导体材料从开口的底部被各向同性地蚀刻以合并开口，从而完全地切割半导体材料段。本文公开的实施例可以用于形成SOI结构，并且在形成具有完全围绕通道区域的晶体管栅极的场效应晶体管中。本文公开的实施例还包括具有围绕通道区域的晶体管栅极的半导体结构以及其中绝缘材料将上半导体材料与下半导体材料完全分离的结构。

7. 发明申请

US20120068366A1 SELECTIVE ETCH CHEMISTRIES FOR FORMING HIGH ASPECT RATIO FEATURES AND ASSOCIATED STRUCTURES 审中-公开
标题翻译：用于形成高比例特征和相关结构的选择性蚀刻化学
公开(公告)号：US20120068366A1
公开(公告)日：2012-03-22
申请号：US13305603
申请日：2011-11-28
申请人： Mark Kiehlbauch , Ted Taylor
发明人： Mark Kiehlbauch , Ted Taylor
IPC分类号： H01L23/48
CPC分类号： H01L21/31116
摘要： An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon species and an oxygen species. The silicon species can be generated from a silicon compound, such as SixMyHz, where “Si” is silicon, “M” is one or more halogens, “H” is hydrogen and x≧1, y≧0 and z≧0. The carbon species can be generated from a carbon compound, such as CαMβHγ, where “C” is carbon, “M” is one or more halogens, “H” is hydrogen, and α≧1, β≧0 and γ≧0. The oxygen species can be generated from an oxygen compound, such as O2, which can react with carbon to form a volatile compound.
摘要翻译：使用包括硅物质和卤化物物质以及还优选碳物质和氧物质的等离子体蚀刻化学品来选择性地蚀刻诸如氧化硅层的层间电介质层。可以从诸如SixMyHz的硅化合物生成硅种类，其中“Si”是硅，“M”是一种或多种卤素，“H”是氢，x≥1，y≥0和z≥0。碳类可以由碳化合物如CαM＆bgr;Hγ生成，其中“C”是碳，“M”是一种或多种卤素，“H”是氢，α≥1，＆bgr;≥0和γ ≧0。氧类可以由氧化合物（例如O 2）产生，其可以与碳反应形成挥发性化合物。

8. 发明申请

US20090159560A1 SELECTIVE ETCH CHEMISTRIES FOR FORMING HIGH ASPECT RATIO FEATURES AND ASSOCIATED STRUCTURES 有权
标题翻译：用于形成高比例特征和相关结构的选择性蚀刻化学
公开(公告)号：US20090159560A1
公开(公告)日：2009-06-25
申请号：US12393893
申请日：2009-02-26
申请人： Mark Kiehlbauch , Ted Taylor
发明人： Mark Kiehlbauch , Ted Taylor
IPC分类号： B44C1/22
CPC分类号： H01L21/31116
摘要： An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon species and an oxygen species. The silicon species can be generated from a silicon compound, such as SixMyHz, where “Si” is silicon, “M” is one or more halogens, “H” is hydrogen and x≧1, y≧0 and z≧0. The carbon species can be generated from a carbon compound, such as CαMβHγ, where “C” is carbon, “M” is one or more halogens, “H” is hydrogen, and α≧1, β≧0 and γ≧0. The oxygen species can be generated from an oxygen compound, such as O2, which can react with carbon to form a volatile compound.
摘要翻译：使用包括硅物质和卤化物物质以及还优选碳物质和氧物质的等离子体蚀刻化学品来选择性地蚀刻诸如氧化硅层的层间电介质层。硅物质可以由诸如SixMyHz的硅化合物产生，其中“Si”是硅，“M”是一个或多个卤素，“H”是氢，x> = 1，y> = 0，z> = 0。碳类可以由诸如CalphaMbetaHgamma的碳化合物产生，其中“C”是碳，“M”是一种或多种卤素，“H”是氢，α> = 1，β> = 0，γ> = 0。氧类可以由氧化合物（例如O 2）产生，其可以与碳反应形成挥发性化合物。

9. 发明授权

US07537994B2 Methods of forming semiconductor devices, assemblies and constructions 有权
标题翻译：形成半导体器件，组件和结构的方法
公开(公告)号：US07537994B2
公开(公告)日：2009-05-26
申请号：US11511596
申请日：2006-08-28
申请人： Ted Taylor , Xiawan Yang
发明人： Ted Taylor , Xiawan Yang
IPC分类号： H01L21/8238 , H01L21/336 , H01L21/8236 , H01L21/3205
CPC分类号： H01L21/76283
摘要： Embodiments disclosed herein include methods in which a pair of openings are formed into semiconductor material, with the openings being spaced from one another by a segment of the semiconductor material. Liners are formed along sidewalls of the openings, and then semiconductor material is isotropically etched from bottoms of the openings to merge the openings and thereby completely undercut the segment of semiconductor material. Embodiments disclosed herein may be utilized in forming SOI constructions, and in forming field effect transistors having transistor gates entirely surrounding channel regions. Embodiments disclosed herein also include semiconductor constructions having transistor gates surrounding channel regions, as well as constructions in which insulative material entirely separates an upper semiconductor material from a lower semiconductor material.
摘要翻译：本文公开的实施例包括其中一对开口形成为半导体材料的方法，其中开口通过半导体材料的部分彼此间隔开。衬套沿着开口的侧壁形成，然后半导体材料从开口的底部被各向同性地蚀刻以合并开口，从而完全地切割半导体材料段。本文公开的实施例可以用于形成SOI结构，并且在形成具有完全围绕通道区域的晶体管栅极的场效应晶体管中。本文公开的实施例还包括具有围绕通道区域的晶体管栅极的半导体结构以及其中绝缘材料将上半导体材料与下半导体材料完全分离的结构。

10. 发明授权

US07517804B2 Selective etch chemistries for forming high aspect ratio features and associated structures 失效
标题翻译：用于形成高纵横比特征和相关结构的选择性蚀刻化学
公开(公告)号：US07517804B2
公开(公告)日：2009-04-14
申请号：US11515435
申请日：2006-08-31
申请人： Mark Kiehlbauch , Ted Taylor
发明人： Mark Kiehlbauch , Ted Taylor
IPC分类号： H01L21/302
CPC分类号： H01L21/31116
摘要： An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon species and an oxygen species. The silicon species can be generated from a silicon compound, such as SixMyHz, where “Si” is silicon, “M” is one or more halogens, “H” is hydrogen and x≧1, y≧0 and z≧0. The carbon species can be generated from a carbon compound, such as CαMβHγ, where “C” is carbon, “M” is one or more halogens, “H” is hydrogen, and α≧1, β≧0 and γ≧0. The oxygen species can be generated from an oxygen compound, such as O2, which can react with carbon to form a volatile compound.
摘要翻译：使用包括硅物质和卤化物物质以及还优选碳物质和氧物质的等离子体蚀刻化学品来选择性地蚀刻诸如氧化硅层的层间电介质层。硅物质可以由诸如SixMyHz的硅化合物产生，其中“Si”是硅，“M”是一个或多个卤素，“H”是氢，x> = 1，y> = 0，z> = 0。碳类可以由诸如CalphaMbetaHgamma的碳化合物产生，其中“C”是碳，“M”是一种或多种卤素，“H”是氢，α> = 1，β> = 0，γ> = 0。氧类可以由氧化合物（例如O 2）产生，其可以与碳反应形成挥发性化合物。

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