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    • 8. 发明申请
    • MASK BLANK SUBSTRATE
    • 掩蔽空白基板
    • US20110171568A1
    • 2011-07-14
    • US13120263
    • 2009-10-25
    • Tatsuya SasakiTakahiro Miyazaki
    • Tatsuya SasakiTakahiro Miyazaki
    • G03F1/00G03F7/20
    • G03F1/50B24B1/005B24B37/042C03C19/00G03F1/14G03F1/60G03F7/20
    • Provided is a mask blank substrate that can reduce the change in flatness of a main surface thereof before and after chucking to make very small the position offset caused by a photomask and that can significantly reduce the difference in tendency of substrate deformation before and after chucking between photomasks. In a mask blank substrate having two main surfaces and four end faces, a central point is set on the main surface, a first axis of symmetry that passes through the central point and that is parallel to one of the end faces and a second axis of symmetry that passes through the central point and that is perpendicular to the first axis of symmetry are respectively set, measurement points are set in the form of a grid with respect to the first axis of symmetry and the second axis of symmetry so as to measure heights of the main surface from a reference plane at the measurement points, respectively, differences each between measured height values at those measurement points located at positions that are axisymmetric with respect to the first axis of symmetry are calculated, and those differences corresponding to at least 95% of the total number of the calculated differences between the measured height values are within a predetermined value.
    • 提供了一种掩模基板,其可以减少夹具之前和之后的主表面的平坦度变化,从而使由光掩模引起的位置偏移非常小,并且可以显着地减少夹具之前和之后的基板变形趋势之间的差异 光掩模 在具有两个主表面和四个端面的掩模坯料基板中,中心点设置在主表面上,第一对称轴线穿过中心点并平行于一个端面,第二轴线 分别设置穿过中心点并且垂直于第一对称轴线的对称性,测量点相对于第一对称轴和第二对称轴设置为网格的形式,以便测量高度 在测量点处从参考平面分别计算在位于相对于第一对称轴对称的位置的那些测量点处的测量高度值之间的差异,并且这些差异对应于至少95 计算出的测量高度值之差的总数的百分比在预定值内。