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    • 4. 发明申请
    • METHOD OF PROCESSING SILICON SUBSTRATE AND METHOD OF MANUFACTURING SUBSTRATE FOR LIQUID DISCHARGE HEAD
    • 硅基板的加工方法及液体排放头的制造方法
    • US20100323526A1
    • 2010-12-23
    • US12784144
    • 2010-05-20
    • Keisuke KishimotoTaichi Yonemoto
    • Keisuke KishimotoTaichi Yonemoto
    • H01L21/306
    • B41J2/1603B41J2/1629B41J2/1631
    • A method of processing a substrate including the following steps: providing a silicon substrate that has an etching mask layer with an opening portion at a first surface thereof and has plane orientation of {100} with the surface of the silicon being exposed from the opening portion; preparing a recessed portion that faces from the first surface to a second surface, which is an opposite surface of the first surface, in the opening portion of the silicon substrate; and forming a penetration port that passes through the first surface and the second surface of the silicon substrate by executing crystalline anisotropic etching in the silicon substrate using an etching liquid in which an etching rate for etching a (100) surface of silicon is higher than an etching rate for etching a (110) surface of silicon, from the recessed portion of the silicon substrate toward the second surface.
    • 一种处理衬底的方法,包括以下步骤:提供具有蚀刻掩模层的硅衬底,该蚀刻掩模层在其第一表面具有开口部分,并且具有{100}的平面取向,其中硅的表面从开口部分露出 ; 准备在所述硅基板的开口部分中从所述第一表面到所述第一表面的相反表面的第二表面的凹部; 以及通过使用其中蚀刻硅的(100)表面的蚀刻速率高于所述硅衬底的蚀刻液体,通过在所述硅衬底中执行结晶各向异性蚀刻来形成穿过所述硅衬底的所述第一表面和所述第二表面的穿透端口 用于从硅衬底的凹陷部分朝向第二表面蚀刻硅的(110)表面的蚀刻速率。
    • 7. 发明申请
    • METHOD OF PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD
    • 生产用于液体喷射头的基材的方法
    • US20120267342A1
    • 2012-10-25
    • US13433806
    • 2012-03-29
    • Kenta FurusawaShuj i KoyamaHiroyuki AboTaichi Yonemoto
    • Kenta FurusawaShuj i KoyamaHiroyuki AboTaichi Yonemoto
    • B44C1/22
    • B41J2/1603B41J2/1629B41J2/1631B41J2/1639B41J2/1645
    • A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.
    • 一种液体喷射头用基材,其特征在于,包括:在液体供给口打开的区域的硅基板的第一面上形成牺牲层,所述牺牲层含有相对于所述硅基板有选择地蚀刻的铝 ; 在作为硅衬底的第一表面的后表面的第二表面上形成蚀刻掩模,所述蚀刻掩模具有对应于所述牺牲层的开口; 通过使用蚀刻掩模作为掩模蚀刻硅衬底并使用含有8质量%以上且小于15质量%的四甲基氢氧化铵的第一蚀刻剂的第一蚀刻步骤; 并且在第一蚀刻步骤之后,通过使用含有15质量%以上且25质量%以下的四甲基氢氧化铵的第二蚀刻剂除去牺牲层的第二蚀刻工序。