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    • 3. 发明授权
    • Glass electrophoresis microchip and method of manufacturing the same by MEMS fabrication
    • 玻璃电泳微芯片及其制造方法
    • US08025776B2
    • 2011-09-27
    • US11926509
    • 2007-10-29
    • Myung-Suk ChunTae Ha Kim
    • Myung-Suk ChunTae Ha Kim
    • C23C14/34
    • C23C14/165C23C14/042G01N27/44791
    • Embodiments of the present invention may provide a microchip applicable to an electrophoresis employing UV detection and a method of manufacturing the same. The microchip of the present invention has a glass channel plate, which is formed on an upper surface thereof with a loading channel and a separation channel and is provided on the upper surface thereof with an optical slit layer made of silicon except the channel region, and a glass reservoir plate, which is formed with sample solution reservoirs and buffer solution reservoirs. The loading channel and the separation channel are formed on the channel plate by deep reactive ion etching. The sample solution reservoirs and the buffer solution reservoirs are formed in the reservoir plate by sand blasting. The channel plate and the reservoir plate are combined by anodic bonding the optical slit layer and the reservoir plate. Electrodes for sample and electrodes for buffer are deposited by sputtering Pt with a shadow mask after anodic bonding.
    • 本发明的实施方式可以提供适用于使用UV检测的电泳的微芯片及其制造方法。 本发明的微芯片具有玻璃通道板,其在其上表面上形成有加载通道和分离通道,并且在其上表面上设置除了通道区域之外的由硅制成的光学狭缝层,以及 一个玻璃储存器板,形成有样品溶液储存器和缓冲溶液储存器。 通过深反应离子蚀刻在通道板上形成加载通道和分离通道。 样品溶液储层和缓冲液储层通过喷砂形成在储层板中。 通过阳极接合光学狭缝层和储存器板来组合通道板和储存器板。 样品电极和缓冲液电极在阳极接合后用阴罩溅射Pt沉积。
    • 4. 发明授权
    • Dual port memory device, memory device and method of operating the dual port memory device
    • 双端口存储器件,存储器件和操作双端口存储器件的方法
    • US07898880B2
    • 2011-03-01
    • US12438428
    • 2007-09-12
    • Yu-Hwan JungJi-Tae HaChang-Hyuk HuiYoung-Hun Lim
    • Yu-Hwan JungJi-Tae HaChang-Hyuk HuiYoung-Hun Lim
    • G11C7/00
    • G06F13/1684G11C7/1075
    • A dual port memory device converts an address and a control signal, which are inputted via a first port and conform to a first type memory interface, into an address and a control signal which conform to a second type memory interface, to access a memory array. The dual port memory device accesses a memory array based on an address and a control signal which are inputted via a second port and conform to the second type memory interface. The dual port memory device accesses a memory array according to the first type memory interface or the second type memory interface in response to a selecting signal. Therefore, the dual port memory device can be coupled to a processor with a first interface (e.g., PSRAM or SRAM interface) and a processor with a second interface (e.g., SDRAM interface).
    • 双端口存储器设备将通过第一端口输入并符合第一类型存储器接口的地址和控制信号转换成符合第二类型存储器接口的地址和控制信号,以访问存储器阵列 。 双端口存储器设备基于经由第二端口输入并符合第二类型存储器接口的地址和控制信号来访问存储器阵列。 响应于选择信号,双端口存储器件根据第一类型存储器接口或第二类型存储器接口访问存储器阵列。 因此,双端口存储器件可以与具有第一接口(例如,PSRAM或SRAM接口)的处理器和具有第二接口(例如,SDRAM接口)的处理器耦合。
    • 7. 发明授权
    • Flat field emitter displays
    • 平场发射器显示
    • US06727642B1
    • 2004-04-27
    • US09646730
    • 2000-09-20
    • Gyu Hyeong ChoNam Sung JungGyun ChaeTae Ha RyooJon Woon HongSeung Tak RyuYoung Ki Kim
    • Gyu Hyeong ChoNam Sung JungGyun ChaeTae Ha RyooJon Woon HongSeung Tak RyuYoung Ki Kim
    • H01J162
    • H01J1/304H01J2201/319H01J2329/00
    • Disclosed are flat panel field emitter displays whose unit cell structure adopt a planar cathode structure in stead of a conventional microtip structure, so as to increase the degree of integration and can be operated at low operation voltages at high speeds. In the structure, a channel insulator is formed below the cathode and underlaid by a gate. By means of the gate voltage, the electron emission from the cathode can be controlled. The electrodes in the structure are arranged in the order of anode, cathode and gate, allowing the simplification of processes. With the ease of controlling the distance between electrodes, the displays can be applied for almost all video systems from small sizes to large screen area displays, in place of conventional displays. The displays allows conventional semiconductor processes and facilities to be utilized as they are.
    • 公开了平板型场发射体显示器,其单体电池结构采用平面阴极结构代替常规微尖端结构,从而提高集成度,并可在高速下在低工作电压下工作。 在该结构中,沟槽绝缘体形成在阴极下方并由栅极覆盖。 通过栅极电压,可以控制来自阴极的电子发射。 结构中的电极按阳极,阴极和栅极的顺序排列,允许简化工艺。 通过容易地控制电极之间的距离,显示器可以应用于从小尺寸到大屏幕区域显示器的几乎所有的视频系统,代替传统的显示器。 这些显示器允许常规的半导体工艺和设备被使用。
    • 10. 发明申请
    • AIR CONDITIONER
    • 冷气机
    • US20130067941A1
    • 2013-03-21
    • US13598073
    • 2012-08-29
    • Dong Gyu LeeHo YoonJae Hun ChoiTae Ha Jun
    • Dong Gyu LeeHo YoonJae Hun ChoiTae Ha Jun
    • F25B49/00
    • F24F11/006F24F11/30F24F11/46F24F11/49F24F11/61F24F11/62F24F11/63F24F11/66F24F11/88
    • An air conditioner having an indoor unit and an outdoor unit, at least one of which includes a communication unit, a switching unit turned on when communication lines are connected to the communication unit, turned off in a standby mode, and turned on when the standby mode is released, a voltage distribution unit distributing voltage applied to the communication unit when the switching unit is turned off, a voltage adjustment unit adjusting the voltage applied to the communication unit and transmitting the adjusted voltage to the communication unit, and a control unit turning the switching unit on when driving voltage is input to the control unit, turning the switching unit off when the at least one of the indoor unit and the outdoor unit enters the standby mode, and turning the switching unit on based on the voltage distributed by the voltage distribution unit in the standby mode.
    • 一种具有室内单元和室外单元的空调器,其中至少一个包括通信单元,当通信线路连接到通信单元时接通的切换单元在待机模式下被关闭,并且当待机 模式被释放,电压分配单元,当开关单元断开时分配施加到通信单元的电压;电压调节单元,调节施加到通信单元的电压并将调整的电压传送到通信单元;以及控制单元, 当驱动电压被输入到控制单元时,开关单元接通,当室内单元和室外单元中的至少一个进入待机模式时关闭开关单元,并且基于由 电压分配单元处于待机模式。