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1. 发明授权

US07381441B2 Low metal porous silica dielectric for integral circuit applications 有权
标题翻译：用于集成电路应用的低金属多孔石英电介质
公开(公告)号：US07381441B2
公开(公告)日：2008-06-03
申请号：US10507410
申请日：2002-04-10
申请人： Roger Y. Leung , Eric Deng , Songyuan Xie , Victor Y. Lu
发明人： Roger Y. Leung , Eric Deng , Songyuan Xie , Victor Y. Lu
IPC分类号： B05D3/02
CPC分类号： C08J9/26 , C08J2201/046 , C08J2383/04 , C09D183/02 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953
摘要： The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.
摘要翻译：本发明涉及纳米多孔二氧化硅介电膜的制造以及包括这些改进膜的半导体器件和集成电路。使用含硅预聚物制备本发明的纳米多孔膜，并且通过允许通过无金属离子的鎓或亲核试剂催化剂在较低凝胶温度下进行交联的方法制备。

2. 发明授权

US06967172B2 Colloidal silica composite films for premetal dielectric applications 失效
标题翻译：用于金属前介电应用的胶体二氧化硅复合膜
公开(公告)号：US06967172B2
公开(公告)日：2005-11-22
申请号：US10680026
申请日：2003-10-07
申请人： Roger Leung , Denis Endisch , Songyuan Xie , Nigel Hacker , Yanpei Deng
发明人： Roger Leung , Denis Endisch , Songyuan Xie , Nigel Hacker , Yanpei Deng
IPC分类号： H01L21/316 , H01L21/302
CPC分类号： H01L21/02282 , H01L21/02203 , H01L21/316 , H01L21/76837
摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.
摘要翻译：使用由分散在溶剂中的致密材料构成的纳米颗粒的胶体悬浮液来形成具有低热收缩率的间隙填充介电材料。电介质材料特别适用于预金属电介质和浅沟槽隔离应用。根据形成电介质材料的方法，将胶体悬浮液沉积在基底上并干燥以形成多孔中间层。通过用液相基质材料（例如旋涂聚合物）渗透，然后通过用气相基质材料渗透，随后固化，或通过单独固化来改性中间层，从而提供间隙填充，耐热稳定的，耐蚀刻的介电材料。

3. 发明授权

US06653718B2 Dielectric films for narrow gap-fill applications 失效
公开(公告)号：US06653718B2
公开(公告)日：2003-11-25
申请号：US10188433
申请日：2002-07-03
申请人： Roger Leung , Denis Endisch , Songyuan Xie , Nigel Hacker , Yanpei Deng
发明人： Roger Leung , Denis Endisch , Songyuan Xie , Nigel Hacker , Yanpei Deng
IPC分类号： H01L2358
CPC分类号： H01L21/02129 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/316 , H01L21/31695 , H01L21/76224 , H01L21/7682 , H01L21/76825 , H01L21/76828 , H01L21/76837 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.

4. 发明授权

US06444495B1 Dielectric films for narrow gap-fill applications 失效
标题翻译：用于窄间隙填充应用的介质膜
公开(公告)号：US06444495B1
公开(公告)日：2002-09-03
申请号：US09761529
申请日：2001-01-11
申请人： Roger Leung , Denis Endisch , Songyuan Xie , Nigel Hacker , Yanpei Deng
发明人： Roger Leung , Denis Endisch , Songyuan Xie , Nigel Hacker , Yanpei Deng
IPC分类号： H01L2144
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02129 , H01L21/022 , H01L21/02203 , H01L21/02282 , H01L21/02337 , H01L21/316 , H01L21/31695 , H01L21/76224 , H01L21/76837 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A colloidal suspension of nanoparticles composed of a dense material dispersed in a solvent is used in forming a gap-filling dielectric material with low thermal shrinkage. The dielectric material is particularly useful for pre-metal dielectric and shallow trench isolation applications. According to the methods of forming a dielectric material, the colloidal suspension is deposited on a substrate and dried to form a porous intermediate layer. The intermediate layer is modified by infiltration with a liquid phase matrix material, such as a spin-on polymer, followed by curing, by infiltration with a gas phase matrix material, followed by curing, or by curing alone, to provide a gap-filling, thermally stable, etch resistant dielectric material.
摘要翻译：使用由分散在溶剂中的致密材料构成的纳米颗粒的胶体悬浮液来形成具有低热收缩率的间隙填充介电材料。电介质材料特别适用于预金属电介质和浅沟槽隔离应用。根据形成电介质材料的方法，将胶体悬浮液沉积在基底上并干燥以形成多孔中间层。通过用液相基质材料（例如旋涂聚合物）渗透，然后通过用气相基质材料渗透，随后固化，或通过单独固化来改性中间层，从而提供间隙填充，耐热稳定的，耐蚀刻的介电材料。

5. 发明授权

US07011889B2 Organosiloxanes 失效
标题翻译：有机硅氧烷
公开(公告)号：US07011889B2
公开(公告)日：2006-03-14
申请号：US10078919
申请日：2002-02-19
申请人： William B. Bedwell , Nigel P. Hacker , Roger Y. Leung , Nancy Iwamoto , Jan Nedbal , Songyuan Xie , Lorenza Moro , Shyama P. Mukherjee
发明人： William B. Bedwell , Nigel P. Hacker , Roger Y. Leung , Nancy Iwamoto , Jan Nedbal , Songyuan Xie , Lorenza Moro , Shyama P. Mukherjee
IPC分类号： B32B9/04
CPC分类号： C08G77/04 , C08G77/12 , G03F7/0751 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/76807 , H01L21/76829 , H01L21/76835 , Y10T428/265 , Y10T428/31663
摘要： The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [Y0.01-1.0SiO1.5-2]a[Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.
摘要翻译：本发明提供了包含至少80重量％的式I的有机硅氧烷：[Y 0.01-1.0 SiO 2 1.5-2] 0.01-1.0 SiO <1.5-2 其中Y是芳基; Z是烯基; a是一级方程式的15％至70％; b是式I的2％至50％; 并且c为式I的20％至80％。本发明的组合物可用于半导体器件，并且可有利地用作蚀刻停止层。

6. 发明授权

US08642246B2 Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof 有权
标题翻译：用于三层图案化应用的组合物，涂料和膜及其制备方法
公开(公告)号：US08642246B2
公开(公告)日：2014-02-04
申请号：US11838854
申请日：2007-08-14
申请人： Joseph Kennedy , Songyuan Xie , Kim Do , Sudip Mukhopadhyay
发明人： Joseph Kennedy , Songyuan Xie , Kim Do , Sudip Mukhopadhyay
IPC分类号： G03F7/075 , G03F7/11 , C08L83/06
CPC分类号： G03F7/0752 , C08G77/20 , C08G77/70 , C08L83/04 , C08L83/06 , C09D183/04 , G03F7/091 , G03F7/11 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , C08L2666/44
摘要： Compositions for use in tri-layer applications are described herein, wherein the composition has a matrix and includes: a formulated polymer comprising at least one type of silicon-based moiety forming the matrix of the polymer, a plurality of vinyl groups coupled to the matrix of the polymer, and a plurality of phenyl groups coupled to the matrix of the polymer, at least one condensation catalyst, and at least one solvent. Tri-layer structures are also contemplated herein that comprise an organic underlayer (first layer), antireflective compositions and/or films contemplated herein (second layer) and a photoresist material (third layer) that are coupled to one another. Methods of producing a composition for tri-layer patterning applications includes: providing a formulated polymer comprising at least one type of silicon-based moiety forming the matrix of the polymer, a plurality of vinyl groups coupled to the matrix of the polymer, and a plurality of phenyl groups coupled to the matrix of the polymer, providing at least one condensation catalyst, providing at least one solvent, providing at least one pH modifier, blending the formulated polymer and part of the at least one solvent in a reaction vessel to form a reactive mixture; and incorporating the at least one pH modifier, the at least one condensation catalyst and the remaining at least one solvent into the reactive mixture to form the composition.
摘要翻译：本文描述了用于三层应用的组合物，其中所述组合物具有基质，并且包括：配制的聚合物，其包含形成聚合物基质的至少一种类型的硅基部分，多个与基质偶联的乙烯基的聚合物，以及与聚合物的基质偶联的多个苯基，至少一种缩合催化剂和至少一种溶剂。本文还涵盖三层结构，其包括彼此耦合的有机底层（第一层），抗反射组合物和/或本文考虑的抗反射组合物（第二层）和光致抗蚀剂材料（第三层）。制备用于三层图案化应用的组合物的方法包括：提供配制的聚合物，其包含形成聚合物基质的至少一种类型的硅基部分，与聚合物基质偶联的多个乙烯基，以及多个提供至少一种缩合催化剂，提供至少一种溶剂，提供至少一种pH调节剂，将配制的聚合物和部分至少一种溶剂混合在反应容器中以形成反应性混合物并将至少一种pH调节剂，至少一种缩合催化剂和剩余的至少一种溶剂掺入到反应混合物中以形成组合物。

7. 发明授权

US06962727B2 Organosiloxanes 失效
标题翻译：有机硅氧烷
公开(公告)号：US06962727B2
公开(公告)日：2005-11-08
申请号：US10161561
申请日：2002-06-03
申请人： William B. Bedwell , Nigel P. Hacker , Roger Y. Leung , Nancy Iwamoto , Jan Nedbal , Songyuan Xie , Lorenza Moro , Shyama P. Mukherjee
发明人： William B. Bedwell , Nigel P. Hacker , Roger Y. Leung , Nancy Iwamoto , Jan Nedbal , Songyuan Xie , Lorenza Moro , Shyama P. Mukherjee
IPC分类号： C08G77/20 , C08G77/04 , C08G77/12 , C09D183/04 , C09J183/04 , G03F7/075 , H01L21/312 , H01L21/768 , H01L23/522 , H01L23/532 , C23C16/56
CPC分类号： C09D183/04 , C08G77/04 , C08G77/12 , C08G77/20 , G03F7/0751 , H01L21/02126 , H01L21/02211 , H01L21/02282 , H01L21/3121 , H01L21/3122 , H01L21/76807 , H01L21/76829 , H01L21/76835 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides an organosiloxane comprising at least 80 weight percent of Formula 1: [Y0.01-1.0SiO1.5-2]a{Z0.01-1.0SiO1.5-2]b[H0.01-1.0SiO1.5-2]c (where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula 1; b is from 2 percent to 50 percent of Formula 1; and c is from 20 percent to 80 percent of Formula 1. The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.
摘要翻译：本发明提供了包含至少80重量％的式1的有机硅氧烷：[Y 0.01-1.0 1.5-2]（Z 0.01-1.0 SiO <1.5-2 （其中Y是芳基; Z是烯基; a是式1的15％到70％; b是2％到50％的式1; c是来自本发明的有机硅氧烷可用作陶瓷粘合剂，高温密封剂和纤维基质粘合剂，本发明的组合物也可用作粘合促进剂，因为当与其它材料结合时它具有良好的粘合性能优选地，本发明的组合物用作微电子应用中的蚀刻停止层，硬掩模和电介质。

8. 发明申请

US20050106376A1 Low metal porous silica dielectric for integral circuit applications 有权
标题翻译：用于集成电路应用的低金属多孔石英电介质
公开(公告)号：US20050106376A1
公开(公告)日：2005-05-19
申请号：US10507410
申请日：2002-04-10
申请人： Roger Leung , Eric Deng , Songyuan Xie , Victor Lu
发明人： Roger Leung , Eric Deng , Songyuan Xie , Victor Lu
IPC分类号： H01L21/768 , C08J9/26 , C09D183/02 , C09D183/04 , H01L21/316 , B05D3/02 , B32B3/26
CPC分类号： C08J9/26 , C08J2201/046 , C08J2383/04 , C09D183/02 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953
摘要： The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.
摘要翻译：本发明涉及纳米多孔二氧化硅介电膜的制造以及包括这些改进膜的半导体器件和集成电路。使用含硅预聚物制备本发明的纳米多孔膜，并且通过允许通过无金属离子的鎓或亲核试剂催化剂在较低凝胶温度下进行交联的方法制备。

9. 发明申请

US20080206690A1 Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof 有权
标题翻译：用于三层图案化应用的组合物，涂料和膜及其制备方法
公开(公告)号：US20080206690A1
公开(公告)日：2008-08-28
申请号：US11838854
申请日：2007-08-14
申请人： Joseph Kennedy , Songyuan Xie , Kim Do , Sudip Mukhopadhyay
发明人： Joseph Kennedy , Songyuan Xie , Kim Do , Sudip Mukhopadhyay
IPC分类号： G03C1/04 , C08G77/04
CPC分类号： G03F7/0752 , C08G77/20 , C08G77/70 , C08L83/04 , C08L83/06 , C09D183/04 , G03F7/091 , G03F7/11 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , C08L2666/44
摘要： Compositions for use in tri-layer applications are described herein, wherein the composition has a matrix and includes: a formulated polymer comprising at least one type of silicon-based moiety forming the matrix of the polymer, a plurality of vinyl groups coupled to the matrix of the polymer, and a plurality of phenyl groups coupled to the matrix of the polymer, at least one condensation catalyst, and at least one solvent. Tri-layer structures are also contemplated herein that comprise an organic underlayer (first layer), antireflective compositions and/or films contemplated herein (second layer) and a photoresist material (third layer) that are coupled to one another. Methods of producing a composition for tri-layer patterning applications includes: providing a formulated polymer comprising at least one type of silicon-based moiety forming the matrix of the polymer, a plurality of vinyl groups coupled to the matrix of the polymer, and a plurality of phenyl groups coupled to the matrix of the polymer, providing at least one condensation catalyst, providing at least one solvent, providing at least one pH modifier, blending the formulated polymer and part of the at least one solvent in a reaction vessel to form a reactive mixture; and incorporating the at least one pH modifier, the at least one condensation catalyst and the remaining at least one solvent into the reactive mixture to form the composition.
摘要翻译：本文描述了用于三层应用的组合物，其中所述组合物具有基质，并且包括：配制的聚合物，其包含形成聚合物基质的至少一种类型的硅基部分，多个与基质偶联的乙烯基的聚合物，以及与聚合物的基质偶联的多个苯基，至少一种缩合催化剂和至少一种溶剂。本文还涵盖三层结构，其包括彼此耦合的有机底层（第一层），抗反射组合物和/或本文考虑的抗反射组合物（第二层）和光致抗蚀剂材料（第三层）。制备用于三层图案化应用的组合物的方法包括：提供配制的聚合物，其包含形成聚合物基质的至少一种类型的硅基部分，与聚合物基质偶联的多个乙烯基，以及多个提供至少一种缩合催化剂，提供至少一种溶剂，提供至少一种pH调节剂，将配制的聚合物和部分至少一种溶剂混合在反应容器中以形成反应性混合物并将至少一种pH调节剂，至少一种缩合催化剂和剩余的至少一种溶剂掺入到反应混合物中以形成组合物。

10. 发明授权

US07381442B2 Porogens for porous silica dielectric for integral circuit applications 有权
标题翻译：用于集成电路应用的多孔二氧化硅电介质的Porogen
公开(公告)号：US07381442B2
公开(公告)日：2008-06-03
申请号：US10507411
申请日：2002-04-10
申请人： Victor Y. Lu , Roger Y. Leung , Eric Deng , Songyuan Xie
发明人： Victor Y. Lu , Roger Y. Leung , Eric Deng , Songyuan Xie
IPC分类号： B05D3/02
CPC分类号： C08J9/26 , C08J2201/046 , C08J2383/04 , C09D183/02 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953
摘要： The invention relates to the production of nanoporous silica dielectric films and to semiconductor devices and integrated circuits comprising these improved films. The nanoporous films of the invention are prepared using silicon containing pre-polymers and are prepared by a process that allows crosslinking at lowered gel temperatures by means of a metal-ion-free onium or nucleophile catalyst.
摘要翻译：本发明涉及纳米多孔二氧化硅介电膜的制造以及包括这些改进膜的半导体器件和集成电路。使用含硅预聚物制备本发明的纳米多孔膜，并且通过允许通过无金属离子的鎓或亲核试剂催化剂在较低凝胶温度下进行交联的方法制备。

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