专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08034536B2 Resist composition and method of forming resist pattern 有权
标题翻译：抗蚀剂图案的抗蚀剂组成和方法
公开(公告)号：US08034536B2
公开(公告)日：2011-10-11
申请号：US12453857
申请日：2009-05-26
申请人： Jun Iwashita , Shogo Matsumaru , Sho Abe
发明人： Jun Iwashita , Shogo Matsumaru , Sho Abe
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0382 , Y10S430/111
摘要： A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.
摘要翻译：形成可用于光刻应用的抗蚀剂图案的新型抗蚀剂组合物和方法。抗蚀剂组合物包括在酸的作用下在碱性显影液中显示改变的溶解性的基础组分（A）和暴露时产生酸的酸产生剂组分（B），其中所述碱性组分（A）含有高分子化合物 A1）具有下述通式（a0-1）表示的结构单元（a0），其中R1表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基，R2 和R 3各自独立地表示氢原子或可以在任意位置含有氧原子的烷基，或者R 2和R 3结合在一起形成亚烷基，W表示可以包含氧原子的环状亚烷基任意的位置

2. 发明申请

US20100028799A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD FOR RESIST PATTERN FORMATION 审中-公开
标题翻译：耐久性暴露的耐腐蚀组合物和耐蚀模式的形成方法
公开(公告)号：US20100028799A1
公开(公告)日：2010-02-04
申请号：US11721957
申请日：2005-12-01
申请人： Hiromitsu Tsuji , Shogo Matsumaru
发明人： Hiromitsu Tsuji , Shogo Matsumaru
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2041
摘要： A resist composition for immersion exposure including a resin component (A) that exhibits changed alkali solubility under the action of acid, wherein the resin component (A) includes a polymer compound (A1) containing a structural unit (a0) having an acid-generating group that generates acid upon irradiation.
摘要翻译： 1.一种浸渍曝光用抗蚀剂组合物，其含有在酸作用下表现出碱溶解性变差的树脂成分（A），其中，所述树脂成分（A）含有含有产生酸的结构单元（a0）的高分子化合物（A1）在照射时产生酸的组。

3. 发明申请

US20090029284A1 PATTERN COATING MATERIAL AND PATTERN FORMING METHOD 有权
标题翻译：图案涂料和图案形成方法
公开(公告)号：US20090029284A1
公开(公告)日：2009-01-29
申请号：US11993444
申请日：2006-06-16
申请人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
发明人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
IPC分类号： G03F7/075 , G03F7/20
CPC分类号： H01L21/0273 , G03F7/405
摘要： There are provided a coating material which improves an etching resistance of a pattern in an etching process using a pattern formed on a substrate as a mask.The material is a pattern coating material for an etching process using a pattern formed on a substrate as a mask, including a metal compound (W) which can produce a hydroxyl group on hydrolysis.
摘要翻译：提供一种涂覆材料，其使用在基板上形成的图案作为掩模，在蚀刻工艺中提高图案的耐蚀刻性。该材料是使用在基板上形成的图案作为掩模的蚀刻工艺的图案涂覆材料，其包括在水解时可产生羟基的金属化合物（W）。

4. 发明授权

US08349543B2 Pattern-forming method, metal oxide film-forming material and method for using the metal oxide film-forming material 有权
标题翻译：图案形成方法，金属氧化物成膜材料和使用金属氧化物成膜材料的方法
公开(公告)号：US08349543B2
公开(公告)日：2013-01-08
申请号：US12373714
申请日：2007-06-18
申请人： Shogo Matsumaru , Ryoji Watanabe , Toshiyuki Ogata
发明人： Shogo Matsumaru , Ryoji Watanabe , Toshiyuki Ogata
IPC分类号： G03F7/26 , C09D5/00
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/0397 , G03F7/40 , H01L21/0337 , H01L21/0338
摘要： A pattern-forming method, including: forming a first resist film by applying a first chemically amplified resist composition onto a support, forming a plurality of resist patterns by selectively exposing and then developing the first resist film, forming a plurality of coated patterns by forming a coating film composed of a metal oxide film on the surface of each resist pattern, forming a second resist film by applying a second chemically amplified resist composition onto the support having the coated patterns formed thereon, and selectively exposing and then developing the second resist film, thereby forming a pattern composed of the plurality of coated patterns and a resist pattern formed in the second resist film onto the support.
摘要翻译：一种图案形成方法，包括：通过将第一化学放大抗蚀剂组合物施加到载体上来形成第一抗蚀剂膜，通过选择性地暴露然后显影第一抗蚀剂膜形成多个抗蚀剂图案，通过形成在每个抗蚀剂图案的表面上由金属氧化物膜构成的涂膜，通过将第二化学放大型抗蚀剂组合物施加到其上形成有涂覆图案的载体上形成第二抗蚀剂膜，并选择性地暴露然后显影第二抗蚀剂膜从而形成由多个涂布图案构成的图案和形成在第二抗蚀剂膜上的抗蚀剂图案到支撑体上。

5. 发明授权

US07829259B2 Resin for photoresist composition, photoresist composition and method for forming resist pattern 有权
标题翻译：用于光致抗蚀剂组合物的树脂，光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07829259B2
公开(公告)日：2010-11-09
申请号：US12365752
申请日：2009-02-04
申请人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
发明人： Hideo Hada , Masaru Takeshita , Shogo Matsumaru , Hiroaki Shimizu
IPC分类号： G03F7/039 , G03F7/028 , C08F2/38
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： A resin for photoresist compositions is disclosed with excellent resolution and line edge roughness characteristics. A photoresist composition and a method for forming a resist pattern using such a resin are also disclosed. The resin has a hydroxyl group bonded to a carbon atom at a polymer terminal, and the carbon atom in the α-position to the hydroxyl group has at least one electron attractive group.
摘要翻译：公开了用于光致抗蚀剂组合物的树脂，其具有优异的分辨率和线边缘粗糙度特性。还公开了光致抗蚀剂组合物和使用这种树脂形成抗蚀剂图案的方法。该树脂在聚合物末端具有与碳原子键合的羟基，并且与羟基的α-位上的碳原子具有至少一个吸电子基团。

6. 发明申请

US20090162784A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
标题翻译：聚合物化合物，阳离子组成和电阻形成方法
公开(公告)号：US20090162784A1
公开(公告)日：2009-06-25
申请号：US11576518
申请日：2005-09-22
申请人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , C08F16/36 , C08F24/00 , G03F7/20
CPC分类号： G03F7/0397 , C08F220/28 , Y10S430/106 , Y10S430/114 , Y10S430/146
摘要： The present invention relates to a polymer compound comprising at least one constituent unit (a0) selected from the group consisting of constituent units represented by the following general formulas (A0-1), (A0-2), (A0-3) and (A0-4) [wherein R represents a hydrogen atom or a lower alkyl group], and a constituent unit (a1) derived from an (a-lower alkyl)acrylate ester having an acid dissociable dissolution inhibiting group.
摘要翻译：本发明涉及包含至少一种选自由以下通式（A0-1），（A0-2），（A0-3）和（A0-3）和（A0-3）表示的结构单元组成的组的组成单元（a0） A0-4）[其中R表示氢原子或低级烷基]，以及由具有酸解离溶解抑制基团的（α-低级烷基）丙烯酸酯衍生的构成单元（a1）。

7. 发明申请

US20090134119A1 FILM-FORMING MATERIAL AND METHOD OF FORMING PATTERN 有权
标题翻译：成膜材料和形成图案的方法
公开(公告)号：US20090134119A1
公开(公告)日：2009-05-28
申请号：US11997300
申请日：2006-08-24
申请人： Shogo Matsumaru , Hideo Hada , Fujikawa Shigenori , Toyoki Kunitake
发明人： Shogo Matsumaru , Hideo Hada , Fujikawa Shigenori , Toyoki Kunitake
IPC分类号： C23F1/02
CPC分类号： H01L21/0273 , C09D183/04 , G03F7/0755 , G03F7/40 , H01L21/31138 , H01L21/31144
摘要： A film-forming material that is capable of forming, at a low temperature, a film having a high degree of etching resistance and a high etching selectivity ratio relative to an organic film, as well as a method of forming a pattern that uses the film-forming material. The film-forming material includes a metal compound (W) capable of generating a hydroxyl group upon hydrolysis, and a solvent (S) in which the metal compound is dissolved, wherein the solvent (S) includes a solvent (S1) with a boiling point of at least 155° C. that contains no functional groups that react with the metal compound (W). The method of forming a pattern includes the steps of: coating a pattern, which has been formed on top of an organic film of a laminate that includes a substrate and the organic film, using the above film-forming material, and then conducting etching of the organic film using the pattern as a mask.
摘要翻译：能够在低温下形成相对于有机膜具有高耐蚀刻性和高蚀刻选择比的膜的成膜材料以及形成使用该膜的图案的方法形成材料。成膜材料包括水解时能够产生羟基的金属化合物（W）和其中溶解有金属化合物的溶剂（S），其中溶剂（S）包括沸腾的溶剂（S1）至少155℃，不含与金属化合物（W）反应的官能团。形成图案的方法包括以下步骤：使用上述成膜材料涂覆已经形成在包括基材和有机膜的层压体的有机膜的顶部上的图案，然后进行蚀刻使用该图案作为掩模的有机膜。

8. 发明授权

US07943284B2 Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern 失效
标题翻译：化合物，溶解抑制剂，正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07943284B2
公开(公告)日：2011-05-17
申请号：US11911341
申请日：2006-04-17
申请人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , C07J9/00 , G03F7/0045 , Y10S430/106
摘要： A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.
摘要翻译：提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法，其使用低分子量材料作为基础组分，并且化合物和溶解抑制剂各自适用于阳性型抗蚀剂组合物。这里，该化合物是分子量为500〜3000的非聚合物，在酸的作用下分解，生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。

9. 发明授权

US07932013B2 Pattern coating material and pattern forming method 有权
标题翻译：图案涂层材料和图案形成方法
公开(公告)号：US07932013B2
公开(公告)日：2011-04-26
申请号：US11993444
申请日：2006-06-16
申请人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
发明人： Shogo Matsumaru , Toshiyuki Ogata , Kiyoshi Ishikawa , Hideo Hada , Shigenori Fujikawa , Toyoki Kunitake
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： H01L21/0273 , G03F7/405
摘要： There are provided a coating material which improves an etching resistance of a pattern in an etching process using a pattern formed on a substrate as a mask.The material is a pattern coating material for an etching process using a pattern formed on a substrate as a mask, including a metal compound (W) which can produce a hydroxyl group on hydrolysis.
摘要翻译：提供一种涂覆材料，其使用在基板上形成的图案作为掩模，在蚀刻工艺中提高图案的耐蚀刻性。该材料是使用在基板上形成的图案作为掩模的蚀刻工艺的图案涂覆材料，其包括在水解时可产生羟基的金属化合物（W）。

10. 发明授权

US07851127B2 Polymer compound, positive resist composition and resist pattern forming method 有权
标题翻译：高分子化合物，正性抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US07851127B2
公开(公告)日：2010-12-14
申请号：US11576518
申请日：2005-09-22
申请人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0397 , C08F220/28 , Y10S430/106 , Y10S430/114 , Y10S430/146
摘要： The present invention relates to a polymer compound comprising at least one constituent unit (a0) selected from the group consisting of constituent units represented by the following general formulas (A0-1), (A0-2), (A0-3) and (A0-4) [wherein R represents a hydrogen atom or a lower alkyl group], and a constituent unit (a1) derived from an (a-lower alkyl)acrylate ester having an acid dissociable dissolution inhibiting group.
摘要翻译：本发明涉及包含至少一种选自由以下通式（A0-1），（A0-2），（A0-3）和（A0-3）和（A0-3）表示的结构单元组成的组的组成单元（a0） A0-4）[其中R表示氢原子或低级烷基]，以及由具有酸解离溶解抑制基团的（α-低级烷基）丙烯酸酯衍生的构成单元（a1）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式