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1. 发明授权

US08896834B2 Optical gas sensor 有权
标题翻译：光学气体传感器
公开(公告)号：US08896834B2
公开(公告)日：2014-11-25
申请号：US13553750
申请日：2012-07-19
申请人： Jing-Yuan Lin , Shang-Chian Su
发明人： Jing-Yuan Lin , Shang-Chian Su
IPC分类号： G01N21/00 , G01J5/02 , B05D3/06
CPC分类号： G01J5/02 , B05D3/06 , G01N21/031 , G01N21/3504
摘要： In the optical gas sensor of the application, a three-dimensional reaction chamber structure is used to replace the traditional simple structure, so that the performance of the gas sensor can be enhanced in a wafer-level size. Besides, a light source, a reaction chamber and a light detector are integrated into one wafer in an exemplary embodiment, so as to achieve the wafer-level integration. In addition, the optical gas sensor can detect various gases simultaneously and has wide application in fields such as home environment monitoring, industrial safety, and disease diagnosis and treatment.
摘要翻译：在本申请的光学气体传感器中，使用三维反应室结构来代替传统的简单结构，从而可以提高晶圆级尺寸的气体传感器的性能。此外，在示例性实施例中，将光源，反应室和光检测器集成到一个晶片中，以便实现晶片级集成。此外，光学气体传感器可以同时检测各种气体，并且广泛应用于家庭环境监测，工业安全和疾病诊断和治疗等领域。

2. 发明申请

US20130258345A1 OPTICAL GAS SENSOR 有权
标题翻译：光学气体传感器
公开(公告)号：US20130258345A1
公开(公告)日：2013-10-03
申请号：US13553750
申请日：2012-07-19
申请人： Jing-Yuan Lin , Shang-Chian Su
发明人： Jing-Yuan Lin , Shang-Chian Su
IPC分类号： G01N21/59
CPC分类号： G01J5/02 , B05D3/06 , G01N21/031 , G01N21/3504
摘要： In the optical gas sensor of the application, a three-dimensional reaction chamber structure is used to replace the traditional simple structure, so that the performance of the gas sensor can be enhanced in a wafer-level size. Besides, a light source, a reaction chamber and a light detector are integrated into one wafer in an exemplary embodiment, so as to achieve the wafer-level integration. In addition, the optical gas sensor can detect various gases simultaneously and has wide application in fields such as home environment monitoring, industrial safety, and disease diagnosis and treatment.
摘要翻译：在本申请的光学气体传感器中，使用三维反应室结构来代替传统的简单结构，从而可以在晶片级尺寸上提高气体传感器的性能。此外，在示例性实施例中，将光源，反应室和光检测器集成到一个晶片中，以便实现晶片级集成。此外，光学气体传感器可以同时检测各种气体，并且广泛应用于家庭环境监测，工业安全和疾病诊断和治疗等领域。

3. 发明授权

US08354729B2 Gas sensor and manufacturing method thereof 有权
标题翻译：气体传感器及其制造方法
公开(公告)号：US08354729B2
公开(公告)日：2013-01-15
申请号：US12979002
申请日：2010-12-27
申请人： Yu Sheng Hsieh , Jing Yuan Lin , Shang Chian Su
发明人： Yu Sheng Hsieh , Jing Yuan Lin , Shang Chian Su
IPC分类号： H01L41/08
CPC分类号： H01L29/84 , B81C1/00158 , B81C1/00182 , B81C1/0019 , G01N27/04 , G01N27/128 , G01N33/0036 , H01L41/1136
摘要： A gas sensor manufacturing method including the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and a conducting line, the conducting line including a connecting arm connecting to the integrated circuit region, the trench is formed around the conducting line and excavated to the oxide layer for reducing power consumption of the heater circuit, the connecting arm reaches over a gap between the integrated circuit region and the outer region and electrically connects to the integrated circuit region; coating or imprinting a sensing material on the circuit region; and etching the carrier and the oxide layer to form a cavity to form a film structure suspended in the cavity by the cantilevered connecting arm.
摘要翻译：一种气体传感器制造方法，包括以下步骤：提供包括氧化物层，器件层和载体的SOI衬底，其中所述氧化物层设置在所述器件层和所述载体之间; 蚀刻器件层以形成集成电路区域，外部区域，沟槽和导电线路，该导线包括连接到集成电路区域的连接臂，沟槽围绕导电线形成并被挖掘到氧化物层为了降低加热器电路的功耗，连接臂越过集成电路区域和外部区域之间的间隙，并且电连接到集成电路区域; 在电路区域上涂覆或压印感测材料; 并且蚀刻载体和氧化物层以形成空腔，以通过悬臂连接臂形成悬浮在空腔中的膜结构。

4. 发明申请

US20120161253A1 GAS SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：气体传感器及其制造方法
公开(公告)号：US20120161253A1
公开(公告)日：2012-06-28
申请号：US12979002
申请日：2010-12-27
申请人： Yu Sheng HSIEH , Jing Yuan Lin , Shang Chian Su
发明人： Yu Sheng HSIEH , Jing Yuan Lin , Shang Chian Su
IPC分类号： H01L29/66 , H01L21/30
CPC分类号： H01L29/84 , B81C1/00158 , B81C1/00182 , B81C1/0019 , G01N27/04 , G01N27/128 , G01N33/0036 , H01L41/1136
摘要： A gas sensor manufacturing method including the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and a conducting line, the conducting line including a connecting arm connecting to the integrated circuit region, the trench is formed around the conducting line and excavated to the oxide layer for reducing power consumption of the heater circuit, the connecting arm reaches over a gap between the integrated circuit region and the outer region and electrically connects to the integrated circuit region; coating or imprinting a sensing material on the circuit region; and etching the carrier and the oxide layer to form a cavity to form a film structure suspended in the cavity by the cantilevered connecting arm.
摘要翻译：一种气体传感器制造方法，包括以下步骤：提供包括氧化物层，器件层和载体的SOI衬底，其中所述氧化物层设置在所述器件层和所述载体之间; 蚀刻器件层以形成集成电路区域，外部区域，沟槽和导电线路，该导线包括连接到集成电路区域的连接臂，沟槽围绕导电线形成并被挖掘到氧化物层为了降低加热器电路的功耗，连接臂越过集成电路区域和外部区域之间的间隙，并且电连接到集成电路区域; 在电路区域上涂覆或压印感测材料; 并且蚀刻载体和氧化物层以形成空腔，以通过悬臂连接臂形成悬浮在空腔中的膜结构。

5. 发明授权

US08096784B2 Bi-directional continuous peristaltic micro-pump 有权
标题翻译：双向连续蠕动式微型泵
公开(公告)号：US08096784B2
公开(公告)日：2012-01-17
申请号：US12103927
申请日：2008-04-16
申请人： Jyh-Jong Sheen , Shang-Chian Su
发明人： Jyh-Jong Sheen , Shang-Chian Su
IPC分类号： F04B43/12
CPC分类号： F04B43/043 , F04B19/006 , F04B43/12 , Y10T137/2202 , Y10T137/2224 , Y10T137/87716
摘要： A bi-directional continuous peristaltic micro-pump is described. The micro-pump comprises: a substrate, an actuating mechanism and a fluid channel. The actuating mechanism comprises: a first slanted membrane the thickness of which increases progressively from left to right, a first chamber formed between the first slanted membrane and the substrate; and a second slanted membrane, the thickness of which decreases progressively from left to right, the second slanted membrane being located to the first slanted membrane's right side and parallel to the first slanted membrane with a space between the two membranes, a second chamber formed between the second slanted membrane and the substrate. By inflating the first chamber and the second chamber, the first slanted membrane and the second slanted membrane generate a continuous sweeping motion to force the working fluid to flow.
摘要翻译：描述了一种双向连续的蠕动式微型泵。微型泵包括：基板，致动机构和流体通道。所述致动机构包括：第一倾斜膜，其厚度从左向右逐渐增加，形成在所述第一倾斜膜与所述基板之间的第一室; 以及第二倾斜膜，其厚度从左向右逐渐减小，所述第二倾斜膜位于所述第一倾斜膜的右侧，并且平行于所述第一倾斜膜，所述膜在所述两个膜之间具有空间;第二室，第二倾斜膜和基底。通过使第一室和第二室膨胀，第一倾斜膜和第二倾斜膜产生连续的扫掠运动以迫使工作流体流动。

6. 发明申请

US20090263264A1 BI-DIRECTIONAL CONTINUOUS PERISTALTIC MICRO-PUMP 有权
标题翻译：双向连续式微型泵
公开(公告)号：US20090263264A1
公开(公告)日：2009-10-22
申请号：US12103927
申请日：2008-04-16
申请人： Jyh-Jong Sheen , Shang-Chian Su
发明人： Jyh-Jong Sheen , Shang-Chian Su
IPC分类号： F04B43/12
CPC分类号： F04B43/043 , F04B19/006 , F04B43/12 , Y10T137/2202 , Y10T137/2224 , Y10T137/87716
摘要： A bidirectional continuous peristaltic micro-pump is described. The micro-pump comprises: a substrate, an actuating mechanism and a fluid channel. The actuating mechanism comprises: a first slanted membrane the thickness of which increases progressively from left to right, a first chamber formed between the first slanted membrane and the substrate; and a second slanted membrane, the thickness of which decreases progressively from left to right, the second slanted membrane being located to the first slanted membrane's right side and parallel to the first slanted membrane with a space between the two membranes, a second chamber formed between the second slanted membrane and the substrate. By inflating the first chamber and the second chamber, the first slanted membrane and the second slanted membrane generate a continuous sweeping motion to force the working fluid to flow.
摘要翻译：描述了一种双向连续的蠕动式微型泵。微型泵包括：基板，致动机构和流体通道。所述致动机构包括：第一倾斜膜，其厚度从左向右逐渐增加，形成在所述第一倾斜膜与所述基板之间的第一室; 以及第二倾斜膜，其厚度从左向右逐渐减小，所述第二倾斜膜位于所述第一倾斜膜的右侧，并且平行于所述第一倾斜膜，所述膜在所述两个膜之间具有空间;第二室，第二倾斜膜和基底。通过使第一室和第二室膨胀，第一倾斜膜和第二倾斜膜产生连续的扫掠运动以迫使工作流体流动。

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