专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08088708B2 Catalyst precursor substance, and catalyst using the same 有权
标题翻译：催化剂前体物质和使用其的催化剂
公开(公告)号：US08088708B2
公开(公告)日：2012-01-03
申请号：US12594983
申请日：2008-04-02
申请人： Kozo Takatsu , Yoshimi Kawashima , Satoshi Nakai
发明人： Kozo Takatsu , Yoshimi Kawashima , Satoshi Nakai
IPC分类号： B01J23/00 , B01J23/60 , B01J23/72 , B01J23/02 , B01J23/06 , B01J23/70 , H01M8/22 , H01M8/06 , C01B31/20 , C01B3/16 , C01B3/18 , C10G25/00 , C10G45/04 , C10G45/60 , C10G29/00
CPC分类号： B01J35/006 , B01J23/80 , B01J35/002 , B01J35/1019 , B01J37/0009 , B01J37/03 , C01B3/16 , C01B3/326 , C01B2203/0233 , C01B2203/0283 , C01B2203/066 , C01B2203/1076 , C01B2203/1223 , C01B2203/1288 , H01M8/0618 , H01M8/0668 , Y02P20/52
摘要： The present invention provides a catalyst precursor substance containing copper, zinc, and aluminum and exhibiting an X-ray diffraction pattern having a broad peak at a specific interplanar spacing d (Å). The present invention also provides a method for producing the catalyst precursor substance by mixing a solution containing a copper salt, a zinc salt, and an aluminum salt with a solution containing an alkali metal hydroxide or an alkaline earth metal hydroxide, thereby forming a precipitate. In the present invention, a catalyst is prepared through calcining of the catalyst precursor; the catalyst is employed for water gas shift reaction; and carbon monoxide conversion is carried out by use of the catalyst. Thus, the present invention also provides a catalyst useful for water gas shift reaction, which exhibits high activity and durability and which, even when applied to a fuel cell, can be used for a long period of time with reduction in activity being suppressed; a carbon monoxide conversion method employing the catalyst; and a fuel cell system employing hydrogen produced through the carbon monoxide conversion method.
摘要翻译：本发明提供了含有铜，锌和铝的催化剂前体物质，并且具有在特定的晶面间距d（）下具有宽峰的X射线衍射图。本发明还提供了通过将含有铜盐，锌盐和铝盐的溶液与含有碱金属氢氧化物或碱土金属氢氧化物的溶液混合从而形成沉淀物来制备催化剂前体物质的方法。在本发明中，通过煅烧催化剂前体制备催化剂; 催化剂用于水煤气变换反应; 并且通过使用催化剂进行一氧化碳转化。因此，本发明还提供了可用于水煤气变换反应的催化剂，其具有高活性和耐久性，并且甚至当应用于燃料电池时可以长时间使用，同时抑制活性的降低; 使用该催化剂的一氧化碳转化方法; 以及使用通过一氧化碳转化法生产的氢的燃料电池系统。

2. 发明授权

US07776785B2 Catalyst for carbon monoxide conversion and method of carbon monoxide modification with the same 有权
标题翻译：一氧化碳转化催化剂和一氧化碳改性方法
公开(公告)号：US07776785B2
公开(公告)日：2010-08-17
申请号：US12445389
申请日：2007-10-10
申请人： Kozo Takatsu , Yoshimi Kawashima , Satoshi Nakai , Takashi Umeki
发明人： Kozo Takatsu , Yoshimi Kawashima , Satoshi Nakai , Takashi Umeki
IPC分类号： B01J23/06
CPC分类号： B01J23/80 , B01J23/002 , B01J35/002 , B01J35/006 , B01J35/1019 , B01J37/0009 , B01J37/03 , B01J2523/17 , B01J2523/27 , B01J2523/31 , C01B3/16 , C01B3/38 , C01B3/48 , C01B2203/0233 , C01B2203/0244 , C01B2203/0261 , C01B2203/0283 , C01B2203/066 , C01B2203/1058 , C01B2203/1064 , C01B2203/1241 , C01B2203/1247 , C01B2203/1258 , H01M8/0618 , Y02P20/52 , Y02P70/56
摘要： The invention provides a catalyst for carbon monoxide conversion, comprising from 10 to 90% by mass of a copper oxide ingredient, from 5 to 50% by mass of a zinc oxide ingredient and from 10 to 50% by mass of an aluminum oxide ingredient, and having a specific surface area of from 100 to 300 m2/g, a carbon monoxide adsorption of from 20 to 80 μmol/g, and a copper oxide crystallite diameter of at most 200 angstroms, as a catalyst suitable for carbon monoxide conversion for fully reducing carbon monoxide in the hydrogen gas obtained through reforming of a starting hydrocarbon material, for the purpose of enabling stable long-term operation of a fuel cell which uses hydrogen gas as a fuel and which is frequently and repeatedly started and stopped.
摘要翻译：本发明提供一氧化碳转化用催化剂，其含有10〜90质量％的氧化铜成分，5〜50质量％的氧化锌成分和10〜50质量％的氧化铝成分，比表面积为100〜300m2 / g，一氧化碳吸附量为20〜80μmol/ g，氧化铜微晶直径为200以下，作为适用于全部一氧化碳转化的催化剂为了能够使使用氢气作为燃料的燃料电池能够稳定地长期运行并且频繁且反复地开始和停止的目的，减少通过原料烃材料的重整获得的氢气中的一氧化碳。

3. 发明申请

US20100112397A1 CATALYST PRECURSOR SUBSTANCE, AND CATALYST USING THE SAME 有权
标题翻译：催化剂前体物质和使用该催化剂的催化剂
公开(公告)号：US20100112397A1
公开(公告)日：2010-05-06
申请号：US12594983
申请日：2008-04-02
申请人： Kozo Takatsu , Yoshimi Kawashima , Satoshi Nakai
发明人： Kozo Takatsu , Yoshimi Kawashima , Satoshi Nakai
IPC分类号： B01J23/06 , B01D53/62 , H01M8/06 , B01J23/72
CPC分类号： B01J35/006 , B01J23/80 , B01J35/002 , B01J35/1019 , B01J37/0009 , B01J37/03 , C01B3/16 , C01B3/326 , C01B2203/0233 , C01B2203/0283 , C01B2203/066 , C01B2203/1076 , C01B2203/1223 , C01B2203/1288 , H01M8/0618 , H01M8/0668 , Y02P20/52
摘要： The present invention provides a catalyst precursor substance containing copper, zinc, and aluminum and exhibiting an X-ray diffraction pattern having a broad peak at a specific interplanar spacing d (Å). The present invention also provides a method for producing the catalyst precursor substance by mixing a solution containing a copper salt, a zinc salt, and an aluminum salt with a solution containing an alkali metal hydroxide or an alkaline earth metal hydroxide, thereby forming a precipitate. In the present invention, a catalyst is prepared through calcining of the catalyst precursor; the catalyst is employed for water gas shift reaction; and carbon monoxide conversion is carried out by use of the catalyst. Thus, the present invention also provides a catalyst useful for water gas shift reaction, which exhibits high activity and durability and which, even when applied to a fuel cell, can be used for a long period of time with reduction in activity being suppressed; a carbon monoxide conversion method employing the catalyst; and a fuel cell system employing hydrogen produced through the carbon monoxide conversion method.
摘要翻译：本发明提供了含有铜，锌和铝的催化剂前体物质，并且具有在特定的晶面间距d（）下具有宽峰的X射线衍射图。本发明还提供了通过将含有铜盐，锌盐和铝盐的溶液与含有碱金属氢氧化物或碱土金属氢氧化物的溶液混合从而形成沉淀物来制备催化剂前体物质的方法。在本发明中，通过煅烧催化剂前体制备催化剂; 催化剂用于水煤气变换反应; 并且通过使用催化剂进行一氧化碳转化。因此，本发明还提供了可用于水煤气变换反应的催化剂，其具有高活性和耐久性，并且甚至当应用于燃料电池时可以长时间使用，同时抑制活性的降低; 使用该催化剂的一氧化碳转化方法; 以及使用通过一氧化碳转化法生产的氢的燃料电池系统。

4. 发明授权

US07223098B2 Ignition unit 失效
标题翻译：点火单元
公开(公告)号：US07223098B2
公开(公告)日：2007-05-29
申请号：US10911167
申请日：2004-08-04
申请人： Hideya Suyama , Atsushi Yoshimoto , Kozo Uehara , Masaaki Kumon , Satoshi Nakai , Kazuya Kawauchi , Takuji Saiki , Shingo Kimura , Naomi Tanaka
发明人： Hideya Suyama , Atsushi Yoshimoto , Kozo Uehara , Masaaki Kumon , Satoshi Nakai , Kazuya Kawauchi , Takuji Saiki , Shingo Kimura , Naomi Tanaka
IPC分类号： F23Q3/00 , F23Q7/08 , F23D14/46
CPC分类号： F23Q3/008
摘要： An ignition unit promotes the efficiency of assembly because connections on the high voltage output side and the ground side are completed by a single operation, when an ignition electrode part and a main unit are connected together directly. A guide rail of the main unit is insertion-engaged into a slit between clamp pieces of a bracket so that the main unit is mounted onto the bracket. With the insertion engagement, a high voltage output terminal receives therein a high voltage input terminal of a spark plug supported by the bracket, a plate terminal which is a part of the bracket is driven into a ground-side connection terminal, and a convex portion of a projected piece is engaged into an engagement hole, for positioning and slipping-off prevention.
摘要翻译：当点火电极部分和主体直接连接在一起时，通过单次操作完成高压输出侧和接地侧的连接，从而提高组装效率。主单元的导轨插入接合在支架的夹片之间的狭缝中，使得主单元安装到支架上。通过插入接合，高压输出端子在其中容纳由支架支撑的火花塞的高压输入端子，作为支架的一部分的板端子被驱动到接地侧连接端子中，并且凸部突出部件被接合到接合孔中，用于防止定位和滑动。

5. 发明申请

US20070032005A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070032005A1
公开(公告)日：2007-02-08
申请号：US11287328
申请日：2005-11-28
申请人： Satoshi Nakai
发明人： Satoshi Nakai
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L21/823462 , H01L21/823857 , Y10S438/981
摘要： The present invention provides a semiconductor device fabrication method including the steps of: forming first gate insulating films in first to third active regions of a silicon substrate; wet-etching the first gate insulating film of the second active region through a first resist opening portion of a first resist pattern; forming a second gate insulating film in the second active region; forming on the silicon substrate a second resist pattern having a second resist portion larger than the first resist opening portion; wet-etching the first gate insulating film of the third active region through a second resist opening portion of the second resist pattern; and forming a third gate insulating film in the third active region.
摘要翻译：本发明提供一种半导体器件制造方法，包括以下步骤：在硅衬底的第一至第三有源区中形成第一栅极绝缘膜; 通过第一抗蚀剂图案的第一抗蚀剂开口部分对第二有源区的第一栅极绝缘膜进行湿蚀刻; 在所述第二有源区中形成第二栅极绝缘膜; 在所述硅衬底上形成具有比所述第一抗蚀剂开口部大的第二抗蚀剂部分的第二抗蚀剂图案; 通过第二抗蚀剂图案的第二抗蚀剂开口部分对第三有源区的第一栅极绝缘膜进行湿蚀刻; 以及在所述第三有源区中形成第三栅极绝缘膜。

6. 发明授权

US06696790B2 Magnetron with external terminals having connecting portions which are air-tightly connected to cathode leads 失效
标题翻译：具有外部端子的磁控管具有气密地连接到阴极引线的连接部分
公开(公告)号：US06696790B2
公开(公告)日：2004-02-24
申请号：US10154809
申请日：2002-05-28
申请人： Noriyuki Murao , Kazuki Miki , Setsuo Hasegawa , Noriyuki Okada , Satoshi Nakai
发明人： Noriyuki Murao , Kazuki Miki , Setsuo Hasegawa , Noriyuki Okada , Satoshi Nakai
IPC分类号： H01J2550
CPC分类号： H01J23/14 , H01J2225/50
摘要： A magnetron including a tubular metallic container which is air-tightly connected to an anode, cathode leads for supporting a cathode with filaments being disposed in a central axial portion of the anode, a stem insulator formed with through holes through which the cathode leads pass, and external terminals formed with planar portions which are air-tightly connected to a surface of the stem insulator opposite to a surface facing the tubular metallic container and with connecting portions which are air-tightly connected to the cathode leads. The connecting portions are arranged to be bent in an axial direction of the cathode leads. It is possible to exhibit the effect of preventing vacuum break from occurring by oxidation or the like since the increase in the area of the connecting portions will result in elongation of the distance between the end portions of the connecting portions and the through holes.
摘要翻译：一种磁控管，其包括气密地连接到阳极的管状金属容器，阴极引线，用于支撑阴极，灯丝设置在阳极的中心轴向部分;杆绝缘子，其形成有阴极引线通过的通孔，以及形成有平坦部分的外部端子，其气密地连接到与所述管状金属容器相对的表面的所述杆绝缘体的表面，以及气密地连接到所述阴极引线的连接部分。连接部被布置成沿着阴极引线的轴向弯曲。由于连接部分的面积的增加将导致连接部分的端部和通孔之间的距离的伸长，所以可以表现出通过氧化等发生防止真空断裂的效果。

7. 发明授权

US5312783A Process for the preparation of a high dielectric thin film using ECR plasma CVD 失效
标题翻译：使用ECR等离子体CVD制备高电介质薄膜的方法
公开(公告)号：US5312783A
公开(公告)日：1994-05-17
申请号：US891154
申请日：1992-05-28
申请人： Kanetake Takasaki , Satoshi Nakai
发明人： Kanetake Takasaki , Satoshi Nakai
IPC分类号： C23C16/40 , C23C16/511 , H01L21/316 , H01L21/822 , H01L27/04 , H01L21/00 , H01L21/02 , H01L21/302 , H01L21/463
CPC分类号： H01L21/31604
摘要： A process for the preparation of a high dielectric thin film. A tantalum oxide film is formed on a substrate at a temperature of from 400.degree. to 850.degree. C. by means of an electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method. A high dielectric film having little leakage current, good surface flatness and good step coverage is obtained.
摘要翻译：一种制备高电介质薄膜的方法。通过电子回旋共振等离子体化学气相沉积（ECR plasma CVD）方法，在400〜850℃的温度下在基板上形成氧化钽膜。获得了几乎没有漏电流，良好的表面平坦度和良好的阶梯覆盖的高介电膜。

8. 发明授权

US4446008A Process for hydrocracking of heavy oils with iron containing aluminosilicates 失效
标题翻译：用含铝硅酸盐的铁加氢裂化重油的方法
公开(公告)号：US4446008A
公开(公告)日：1984-05-01
申请号：US443452
申请日：1982-11-22
申请人： Hajime Shimakawa , Satoshi Nakai
发明人： Hajime Shimakawa , Satoshi Nakai
IPC分类号： B01J29/076 , C10G47/20 , B01J29/14 , B01J29/24 , B01J29/34
CPC分类号： B01J29/076 , C10G47/20
摘要： The invention provides a process for hydrocracking heavy oils in the presence of a catalyst comprising a carrier and metals belonging to the Groups VIB and VIII of the Periodic Table. The carrier consists of from 20 to 80% by weight of iron-containing aluminosilicate and from 80 to 20% by weight of an inorganic oxide. The iron-containing aluminosilicate is prepared by treating steam-treated crystalline aluminosilicate with an aqueous iron salt solution at a pH of 1.5 or less. The molybdenum/iron-containing aluminosilicate can be used in place of the iron-containing aluminosilicate. According to the process of the present invention, the yield of an intermediate fraction can be increased.
摘要翻译：本发明提供了一种在包含载体和属于元素周期表VIB和VIII族的金属的催化剂存在下加氢裂化重油的方法。载体由20至80重量％的含铁硅铝酸盐和80至20重量％的无机氧化物组成。含铁硅铝酸盐是通过用1.5或更低的pH值的铁盐水溶液处理蒸汽处理的结晶硅铝酸盐来制备的。可以使用含钼/铁的硅铝酸盐代替含铁的硅铝酸盐。根据本发明的方法，可以提高中间馏分的产率。

9. 发明授权

US08084340B2 Method of manufacturing semiconductor device and semiconductor device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US08084340B2
公开(公告)日：2011-12-27
申请号：US11541728
申请日：2006-10-03
申请人： Satoshi Nakai
发明人： Satoshi Nakai
IPC分类号： H01L21/425
CPC分类号： H01L21/26513 , H01L21/76232 , H01L29/78
摘要： A method of manufacturing a semiconductor device whereby, even in cases where ions are implanted into a shallow region of a semiconductor substrate when a deep well is formed, the influence of the ions on a MOSFET can be removed, thereby eliminating the need for increasing the chip area. A photoresist with a thickness matching the wavelength of exposure light is formed over the semiconductor substrate and then is exposed to the exposure light to form a photoresist pattern with an opening corresponding to a region for forming a first well. Subsequently, using the photoresist pattern as a mask, ions are implanted to form the first well, and after the photoresist pattern is removed, an epitaxial layer is grown over the semiconductor substrate. Consequently, the deep well is virtually located deeper in level than at the time of the ion implantation by an amount corresponding to the thickness of the epitaxial layer.
摘要翻译：一种半导体器件的制造方法，其中即使在形成深阱时将离子注入到半导体衬底的浅区域的情况下，可以除去离子对MOSFET的影响，从而不需要增加芯片面积。在半导体衬底上形成具有与曝光光的波长相匹配的光致抗蚀剂，然后暴露于曝光光以形成具有对应于用于形成第一阱的区域的开口的光致抗蚀剂图案。随后，使用光致抗蚀剂图案作为掩模，注入离子以形成第一阱，并且在去除光致抗蚀剂图案之后，在半导体衬底上生长外延层。因此，深阱实际上位于比离子注入时更深的水平，其量与对应于外延层的厚度相对应。

10. 发明授权

US07008834B2 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07008834B2
公开(公告)日：2006-03-07
申请号：US10844497
申请日：2004-05-13
申请人： Satoshi Nakai , Jun Sakuma , Mitsugu Tajima
发明人： Satoshi Nakai , Jun Sakuma , Mitsugu Tajima
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L29/66772 , H01L21/76283 , H01L21/84 , H01L27/1203 , H01L29/78609 , H01L29/78654
摘要： A method for manufacturing a semiconductor device includes: forming a first photoresist pattern on a second hard mask by use of ArF; forming first and second openings in the second hard mask by use of the first photoresist pattern as an etching mask; forming third and fourth openings in a first hard mask under the first and second openings; forming a partial trench (first trench) and a trench for a full trench (second trench) in an SOI substrate (semiconductor substrate) under the first and second openings; and forming the trench for a full trench into a full trench by etching the trench for a full trench through the fourth opening exposed through a third window of a second photoresist pattern.
摘要翻译：一种制造半导体器件的方法包括：通过使用ArF在第二硬掩模上形成第一光致抗蚀剂图案; 通过使用第一光致抗蚀剂图案作为蚀刻掩模在第二硬掩模中形成第一和第二开口; 在第一和第二开口下方的第一硬掩模中形成第三和第四开口; 在第一和第二开口下方的SOI衬底（半导体衬底）中形成用于全沟槽（第二沟槽）的部分沟槽（第一沟槽）和沟槽; 以及通过蚀刻通过穿过第二光致抗蚀剂图案的第三窗口暴露的第四开口的全沟槽的沟槽，将全沟槽的沟槽形成全沟槽。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式