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    • 3. 发明申请
    • Transflective type liquid crystal display device and method of fabricating the same
    • 反射型液晶显示装置及其制造方法
    • US20070002224A1
    • 2007-01-04
    • US11319732
    • 2005-12-29
    • JongWon MoonSuSeok ChoiSangHo Choi
    • JongWon MoonSuSeok ChoiSangHo Choi
    • G02F1/1335
    • G02F1/133555G02F1/133345G02F1/136227
    • A transflective type LCD device and a method of fabricating the same are discussed. According to an embodiment of the present invention, the transflective type LCD device includes a plurality of gate lines and a plurality of data lines formed on a first substrate to define at least one pixel region having a reflection area and a transmission area, a thin film transistor formed on a crossing point of the plurality of gate lines and the plurality of data lines, a first insulating layer formed on the first substrate including the thin film transistor, a pixel electrode formed on the first insulating layer and electrically connected with the thin film transistor, a second insulating layer formed corresponding to the reflection area on the pixel electrode and having a predetermined dielectric constant, and a reflection plate formed on the second insulating layer.
    • 讨论了半透射型LCD装置及其制造方法。 根据本发明的实施例,半透射型LCD装置包括多个栅极线和形成在第一基板上的多条数据线,以限定具有反射区域和透射区域的至少一个像素区域,薄膜 形成在所述多条栅极线和所述多条数据线的交叉点上的晶体管,形成在包括所述薄膜晶体管的第一基板上的第一绝缘层,形成在所述第一绝缘层上并与所述薄膜电连接的像素电极 晶体管,对应于像素电极上的反射区域形成并具有预定介电常数的第二绝缘层,以及形成在第二绝缘层上的反射板。
    • 8. 发明授权
    • Transflective type liquid crystal display device and method of fabricating the same
    • 反射型液晶显示装置及其制造方法
    • US08547509B2
    • 2013-10-01
    • US11319732
    • 2005-12-29
    • JongWon MoonSuSeok ChoiSangHo Choi
    • JongWon MoonSuSeok ChoiSangHo Choi
    • G02F1/1335
    • G02F1/133555G02F1/133345G02F1/136227
    • A transflective type LCD device and a method of fabricating the same are discussed. According to an embodiment of the present invention, the transflective type LCD device includes a plurality of gate lines and a plurality of data lines formed on a first substrate to define at least one pixel region having a reflection area and a transmission area, a thin film transistor formed on a crossing point of the plurality of gate lines and the plurality of data lines, a first insulating layer formed on the first substrate including the thin film transistor, a pixel electrode formed on the first insulating layer and electrically connected with the thin film transistor, a second insulating layer formed corresponding to the reflection area on the pixel electrode and having a predetermined dielectric constant, and a reflection plate formed on the second insulating layer.
    • 讨论了半透射型LCD装置及其制造方法。 根据本发明的实施例,半透射型LCD装置包括多个栅极线和形成在第一基板上的多条数据线,以限定具有反射区域和透射区域的至少一个像素区域,薄膜 形成在所述多条栅极线和所述多条数据线的交叉点上的晶体管,形成在包括所述薄膜晶体管的所述第一基板上的第一绝缘层,形成在所述第一绝缘层上并与所述薄膜电连接的像素电极 晶体管,对应于像素电极上的反射区域形成并具有预定介电常数的第二绝缘层,以及形成在第二绝缘层上的反射板。