专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08916666B2 Hexafluoropropylene oxide polymer compositions and a method of preparing hexafluoropropylene oxide polymer using hexafluoropropylene oligomer 有权
标题翻译：六氟丙烯聚合物组合物和使用六氟丙烯低聚物制备六氟环氧丙烷聚合物的方法
公开(公告)号：US08916666B2
公开(公告)日：2014-12-23
申请号：US13255013
申请日：2009-07-28
申请人： Soo-Bok Lee , In Jun Park , Jong-Wook Ha , Kwang Won Lee , Sang Goo Lee
发明人： Soo-Bok Lee , In Jun Park , Jong-Wook Ha , Kwang Won Lee , Sang Goo Lee
IPC分类号： C08F214/28
CPC分类号： C08F214/28 , C08G65/226
摘要： The present invention relates to hexafluoropropylene oxide polymer composition and a process of preparing of hexafluoropropylene oxide polymer by an anionic polymerization, and in particular the hexafluoropropylene oxide polymer composition comprises an anionic initiator, a polar solvent, hexafluoropropylene and hexafluoropropylene oxide. The hexafluoropropylene oxide polymer is prepared under particular reaction conditions by using the composition, hexafluoropropylene oxide polymer prepared by using the composition according to a preparation process herein has a weight average molecular weight (Mw) of 1,500-4,000 at −10-20° C.
摘要翻译：本发明涉及六氟环氧丙烷聚合物组合物和通过阴离子聚合制备六氟环氧丙烷聚合物的方法，特别是六氟环氧丙烷聚合物组合物包括阴离子引发剂，极性溶剂，六氟丙烯和六氟环氧丙烷。六氟环氧丙烷聚合物通过使用组合物在特定反应条件下制备，通过使用根据本发明制备方法的组合物制备的六氟环氧丙烷聚合物在-10-20℃下的重均分子量（Mw）为1,500-4,000

2. 发明授权

US07527704B2 Method for preparing film structure comprising ferroelectric single crystal layer 有权
标题翻译：制备包含铁电单晶层的薄膜结构的方法
公开(公告)号：US07527704B2
公开(公告)日：2009-05-05
申请号：US10539886
申请日：2003-07-14
申请人： Jaehwan Eun , Sang-Goo Lee , Byungju Choi , Sungmin Rhim
发明人： Jaehwan Eun , Sang-Goo Lee , Byungju Choi , Sungmin Rhim
IPC分类号： B32B38/10 , H01L21/02 , H01L21/04 , H01L21/77 , H01L21/302 , H01L21/461 , B32B38/18 , H01L21/76 , H01L21/304 , H01L21/306 , H01L21/463 , H01L21/465
CPC分类号： H01L21/76251 , C30B29/30 , C30B33/00 , H01L21/2007 , H01L21/31604 , H01L21/31691 , Y10T156/1082
摘要： A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a ferroelectric single crystal plate to a substrate by a conductive adhesive or metal layer, the ferroelectric single crystal plate being polished before or after the adhesion with the substrate.
摘要翻译：通过将导电粘合剂或金属层将铁电单晶板粘附到基板上，可以有利地用于制造高性能电气或电子部件或器件的铁电单晶的膜结构，铁电单晶板在与基底粘合之前或之后被抛光。

3. 发明申请

US20060214131A1 Ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof 有权
公开(公告)号：US20060214131A1
公开(公告)日：2006-09-28
申请号：US10551355
申请日：2003-07-30
申请人： Sang-Goo Lee , Min-Chan Kim , Byung-Ju Choi , Min-Chul Shin , Su-Han Yu
发明人： Sang-Goo Lee , Min-Chan Kim , Byung-Ju Choi , Min-Chul Shin , Su-Han Yu
IPC分类号： E04B1/74
CPC分类号： C01G33/006 , C01P2006/40 , C30B11/00 , C30B29/22 , H01G7/06 , H01L21/3147 , H01L21/31691 , H01L41/18
摘要： The present invention relates to a ferroelectric ceramic compound having the composition of the following formula: s[L]-x[P]y[M]z[N]p[T], a ferroelectric ceramic single crystal, and preparation processes thereof. The ferroelectric ceramic compound and the single crystal according to the present invention are relaxor ferroelectrics having high piezoelectricity, a high electromechanical coefficient and a high electrooptical coefficient, and are useful for manufacturing tunable filters for radio communication, optical communication devices, surface acoustic wave devices, and the like. Particularly, the process of preparing the single crystal according to the present invention enables preparation of a single crystal having a diameter of 5 cm or greater and a single crystal wafer with uniform composition. In the formula, [P] is lead oxide, [M] is magnesium oxide or zinc oxide, [N] is niobium oxide, [T] is titanium oxide, [L] is one selected from the group consisting of lithium tantalate or lithium niobate, lithium, lithium oxide, platinum, indium, palladium, rhodium, nickel, cobalt, iron, strontium, scandium, ruthenium, copper, yttrium, and ytterbium or mixtures thereof, and x, y, z, p and s are defined as 0.55

4. 发明申请

US20060045889A1 Novel recombinant sabin type 1 poliovirus vector and vaccine against poliovirus 有权
标题翻译：新型重组sabin 1型脊髓灰质炎病毒载体和针对脊髓灰质炎病毒的疫苗
公开(公告)号：US20060045889A1
公开(公告)日：2006-03-02
申请号：US10926333
申请日：2004-08-26
申请人： Yong Soo Bae , Sang Goo Lee , Hye Jeong , Dong Lee , Ki Kim , Dae Kim
发明人： Yong Soo Bae , Sang Goo Lee , Hye Jeong , Dong Lee , Ki Kim , Dae Kim
IPC分类号： A61K39/13 , C12Q1/70 , C12Q1/68 , C12N15/863
CPC分类号： A61K39/13 , A61K39/12 , A61K2039/542 , C12N2770/32634 , C12N2770/32643 , Y02A50/466
摘要： The present invention relates to a novel recombinant Sabin type 1 poliovirus vector for the immunogenicity of neutralizing antibody against polioviral infection, which comprises: (a) a genomic nucleotide sequence of a parent Sabin type 1 poliovirus; (b) a nucleotide sequence encoding an additional polioviral cleavage site; and (c) a nucleotide sequence of a conformational epitope encoding a VP1 neutralizing epitope of poliovirus type 2 or 3 and linked to the nucleotide sequence of (b).
摘要翻译：本发明涉及一种用于中和抗脊髓灰质炎病毒感染的免疫原性的新型重组Sabin 1型脊髓灰质炎病毒载体，其包含：（a）母本Sabin 1型脊髓灰质炎病毒的基因组核苷酸序列; （b）编码另外的脊髓灰质炎病毒切割位点的核苷酸序列; 和（c）编码2型或3型脊髓灰质炎病毒的VP1中和表位并与（b）的核苷酸序列连接的构象表位的核苷酸序列。

5. 发明授权

US06491889B2 Ferroelectric single crystal wafer and process for the preparation thereof 有权
标题翻译：铁电单晶晶片及其制备方法
公开(公告)号：US06491889B2
公开(公告)日：2002-12-10
申请号：US09823577
申请日：2001-03-30
申请人： Sang-Goo Lee , Sung-Min Rhim , Min-Chan Kim
发明人： Sang-Goo Lee , Sung-Min Rhim , Min-Chan Kim
IPC分类号： C01B3326
CPC分类号： C30B11/00 , B01J23/002 , B01J23/14 , B01J23/628 , B01J23/6484 , B01J23/8966 , B01J23/898 , B01J35/004 , B01J2523/00 , C01B3/042 , C01B13/0207 , C01G23/003 , C01G53/006 , C01G55/002 , C01P2006/40 , C30B9/00 , C30B29/30 , C30B29/32 , Y02E60/364 , B01J2523/11 , B01J2523/18 , B01J2523/22 , B01J2523/44 , B01J2523/47 , B01J2523/56 , B01J2523/57 , B01J2523/847 , B01J2523/27 , B01J2523/828
摘要： A ferroelectric single crystal having the composition of formula (I) has a high Piezoelectric constant together with good electromechanical and electrooptical properties and it can be prepared in a size of 5 cm in diameter or greater, useful for preparing various devices: x(A)y(B)z(C)-p(P)n(N); (I) wherein, (A) is Pb(Mg⅓ Nb⅔)O3 or Pb(Zn⅓Nb⅔)O3, (B) is PbTiO3, (C) is LiTaO3, (P) is a metal selected from the group consisting of Pt, Au, Ag, Pd and Rh, (N) is an oxide of a metal selected from the group consisting of Ni, Co, Fe, Sr, Sc, Ru, Cu and Cd, x is a number in the range of 0.65 to 0.98, y is a number in the range fo 0.01 to 0.34, z is a number in the range of 0.01 to 0.1, and p and n are each independently a number in the range of 0.01 to 5.
摘要翻译：具有式（I）组成的铁电单晶具有高的压电常数以及良好的机电和电光特性，并且可以制备成直径为5cm或更大的尺寸，可用于制备各种装置：x（A） y（B）z（C）-p（P）n（N）; （I）其中，（A）为Pb（Mg1 / 3Nb2 / 3）O3或Pb（Zn1 / 3Nb2 / 3）O3，（B）为PbTiO3，（C）为LiTaO3，（P）为选自由Pt，Au，Ag，Pd和Rh组成的组，（N）是选自Ni，Co，Fe，Sr，Sc，Ru，Cu和Cd的金属的氧化物，x是范围为0.65〜0.98，y为0.01〜0.34范围内的数，z为0.01〜0.1的数，p和n分别为0.01〜5的数。

6. 发明授权

US07527690B2 Ferroelectric ceramic compound, a ferroelectric ceramic single crystal, and preparation processes thereof 有权
标题翻译：铁电陶瓷复合物，铁电陶瓷单晶及其制备方法
公开(公告)号：US07527690B2
公开(公告)日：2009-05-05
申请号：US10551355
申请日：2003-07-30
申请人： Sang-Goo Lee , Min-Chan Kim , Byung-Ju Choi , Min-Chul Shin , Su-Han Yu
发明人： Sang-Goo Lee , Min-Chan Kim , Byung-Ju Choi , Min-Chul Shin , Su-Han Yu
IPC分类号： C30B11/04
CPC分类号： C01G33/006 , C01P2006/40 , C30B11/00 , C30B29/22 , H01G7/06 , H01L21/3147 , H01L21/31691 , H01L41/18
摘要： The present invention relates to a ferroelectric ceramic compound having the composition of the following formula: s[L]−x[P]y[M]z[N]p[T], a ferroelectric ceramic single crystal, and preparation processes thereof. The ferroelectric ceramic compound and the single crystal according to the present invention are relaxor ferroelectrics having high piezoelectricity, a high electromechanical coefficient and a high electrooptical coefficient, and are useful for manufacturing tunable filters for radio communication, optical communication devices, surface acoustic wave devices, and the like. Particularly, the process of preparing the single crystal according to the present invention enables preparation of a single crystal having a diameter of 5 cm or greater and a single crystal wafer with uniform composition. In the formula, [P] is lead oxide, [M] is magnesium oxide or zinc oxide, [N] is niobium oxide, [T] is titanium oxide, [L] is one selected from the group consisting of lithium tantalate or lithium niobate, lithium, lithium oxide, platinum, indium, palladium, rhodium, nickel, cobalt, iron, strontium, scandium, ruthenium, copper, yttrium, and ytterbium or mixtures thereof, and x, y, z, p and s are defined as 0.55
摘要翻译：本发明涉及具有下式的组成的铁电陶瓷化合物及其制备方法：s [L] -x [P] y [M] z [N] p [T]，铁电陶瓷单晶。根据本发明的铁电陶瓷化合物和单晶是具有高压电性，高机电系数和高电光系数的弛豫铁电体，并且可用于制造用于无线电通信的可调谐滤波器，光通信装置，表面声波装置，等等。特别地，根据本发明的制备单晶的方法能够制备直径为5cm以上的单晶和具有均匀组成的单晶晶片。在该式中，[P]是氧化铅，[M]是氧化镁或氧化锌，[N]是氧化铌，[T]是氧化钛，[L]是选自钽酸锂或锂铌酸锂，锂，氧化锂，铂，铟，钯，铑，镍，钴，铁，锶，钪，钌，铜，钇和镱或其混合物，x，y，z，p和s定义为 0.55

7. 发明申请

US20060042541A1 Method for preparation of ferroelectric single crystal film structure using deposition method 有权
标题翻译：使用沉积法制备铁电单晶膜结构的方法
公开(公告)号：US20060042541A1
公开(公告)日：2006-03-02
申请号：US10539883
申请日：2003-07-14
申请人： Jaehwan Eun , Sang-Goo Lee , Hyeongjoon Kim , Minchan Kim
发明人： Jaehwan Eun , Sang-Goo Lee , Hyeongjoon Kim , Minchan Kim
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/24 , C30B23/02 , C30B25/02 , H01L21/31604 , H01L21/31691 , H01L21/76251
摘要： A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric and electronic parts and devices is prepared by forming an electrode layer having a perovskite crystal structure on a substrate made of a silicon or ferroelectric single crystal optionally polished to have a off-axis crystal structure, and epitaxially growing a layer of a ferroelectric single crystal thereon by pulsed laser deposition (PLD) or metallorganic chemical vapor deposition (MOCVD).
摘要翻译：可以有益地用于高性能电气和电子部件和器件的制造中的铁电单晶的膜结构通过在由硅或铁电单晶制成的衬底上形成可选地具有钙钛矿晶体结构的电极层研磨成具有离轴晶体结构，并通过脉冲激光沉积（PLD）或金属有机化学气相沉积（MOCVD）在其上外延生长铁电单晶层。

8. 发明申请

US20090155581A1 Per-Fluoro Polyether Compound, Antifouling Coating Composition and Film Containing Same 有权
标题翻译：全氟聚醚化合物，防污涂料组合物和含有其的薄膜
公开(公告)号：US20090155581A1
公开(公告)日：2009-06-18
申请号：US12260331
申请日：2008-10-29
申请人： Soo Bok Lee , In Jun Park , Jong Wook Ha , Kwang Won Lee , Sang Goo Lee , Eun Young Park , Eun Kyung Kim
发明人： Soo Bok Lee , In Jun Park , Jong Wook Ha , Kwang Won Lee , Sang Goo Lee , Eun Young Park , Eun Kyung Kim
IPC分类号： C08G65/32 , C08K5/02 , B32B5/00
CPC分类号： C09D5/1675 , C08G65/007 , C08G65/226 , C08G65/336 , C08G2650/48 , C09D4/00 , C09D171/02 , Y10T428/265 , Y10T428/266 , Y10T428/31504 , Y10T428/31507 , Y10T428/31663 , Y10T428/31667 , C08G77/00
摘要： Disclosed are a perfluoropolyether-modified silane compound, an antifouling coating composition comprising the same, and a film comprising the same. More particularly, the present invention provides a novel perfluoropolyether-modified silane compound of the formula (1) below, an antifouling coating composition comprising the compound and, when coated on the surface of transparent glass or plastic materials, providing superior antifouling property, scratch resistance and durability while maintaining the transparency of the materials, and a film formed by coating the composition and applicable as antireflection film or optical filter of flat panel displays such as lenses, glass windows, liquid crystal displays (LCD), plasma display panels (PDP), organic electro-luminescence (EL) and filed emission displays (FED): wherein n is an integer of 10 to 70; m is an integer of 1 to 3; p and q are independently 2 or 3; R1 is C2-C4 alkyl; R2 and R3 are independently C1-C6 alkyl or phenyl; R4 is C3-C5 alkyl or C3-C6 alkyl ether; R5 is C1-C6 alkyl or phenyl; and X is C1-C3 alkoxy.
摘要翻译：公开了全氟聚醚改性的硅烷化合物，包含该硅烷化合物的防污涂料组合物和包含该硅烷化合物的膜。更具体地说，本发明提供了下述式（1）的新型全氟聚醚改性硅烷化合物，包含该化合物的防污涂料组合物，当涂覆在透明玻璃或塑料材料的表面上时，提供优异的防污性能，耐刮擦性和耐久性，同时保持材料的透明度，以及通过涂覆该组合物形成的膜，可用作诸如透镜，玻璃窗，液晶显示器（LCD），等离子体显示面板（PDP）等平板显示器的抗反射膜或滤光器。有机电致发光（EL）和场发射显示器（FED）：其中n为10〜70的整数; m为1〜3的整数。 p和q独立地为2或3; R1是C2-C4烷基; R2和R3独立地是C1-C6烷基或苯基; R4是C3-C5烷基或C3-C6烷基醚; R5是C1-C6烷基或苯基; X为C1-C3烷氧基。

9. 发明授权

US06545387B2 Surface acoustic wave filter using novel piezoelectric single crystal substrate 有权
标题翻译：表面声波滤波器采用新型压电单晶基板
公开(公告)号：US06545387B2
公开(公告)日：2003-04-08
申请号：US09823578
申请日：2001-03-30
申请人： Sang-Goo Lee , Jin-Yong Kim , Hyeong-Joon Kim
发明人： Sang-Goo Lee , Jin-Yong Kim , Hyeong-Joon Kim
IPC分类号： H01L4108
CPC分类号： C30B11/00 , C01G23/003 , C01G33/006 , C01G53/006 , C01G55/002 , C01P2002/54 , C01P2006/80 , C30B9/00 , C30B29/30 , C30B29/32
摘要： A surface acoustic wave (SAW) filter comprising as a substrate a piezoelectric single crystal having the composition of formula (I) with high dielectric and piezoelectric constants, low temperature coefficient and good electromechanical properties has a high piezoelectric constant, a low insertion loss, and a broad bandwidth in a high frequency region, and therefore can be useful for preparing a SAW filter for high frequency telecommunication systems: x(A)y(B)z(C)—p(P)n(N) (I) wherein, (A) is Pb(Mg1/3Nb2/3)O3 or Pb(Zn1/3Nb2/3)O3, (B) is PbTiO3, (C) is LiTaO3, (P) is a metal selected from Pt, Au, Ag, Pd and Rh, (N) is an oxide of a metal selected from Ni, Co, Fe, Sr, Sc, Ru, Cu and Cd, x is a number of 0.65 to 0.98, y is a number of 0.01 to 0.34, z is a number of 0.01 to 0.1, and p and n are each independently a number of 0.01 to 5.
摘要翻译：具有高介电常数和压电常数，低温系数和良好机电性能的具有式（I）组成的压电单晶作为基片的表面声波（SAW）滤波器具有高压电常数，低插入损耗和在高频区域具有宽带宽，因此可用于制备用于高频电信系统的SAW滤波器：其中（A）是Pb（Mg1 / 3Nb2 / 3）O3或Pb（Zn1 / 3Nb2 / 3）O3 ，（B）是PbTiO3，（C）是LiTaO3，（P）是选自Pt，Au，Ag，Pd和Rh的金属，（N）是选自Ni，Co，Fe，Sr， Sc，Ru，Cu和Cd，x为0.65至0.98的数，y为0.01至0.34的数，z为0.01至0.1的数，p和n各自独立地为0.01至5的数。

10. 发明申请

US20110319574A1 Hexafluoropropylene Oxide Polymer Compositions and a Preparing Method of Hexafluoropropylene Oxide Polymer Using Hexafluoropropylene Oligomer 有权
标题翻译：六氟丙烯氧化物聚合物组合物和使用六氟丙烯低聚物的六氟丙烯氧化物聚合物的制备方法
公开(公告)号：US20110319574A1
公开(公告)日：2011-12-29
申请号：US13255013
申请日：2009-07-28
申请人： Soo-Bok Lee , In Jun Park , Jong-Wook Ha , Kwang Won Lee , Sang Goo Lee
发明人： Soo-Bok Lee , In Jun Park , Jong-Wook Ha , Kwang Won Lee , Sang Goo Lee
IPC分类号： C08F214/28 , C08F2/06
CPC分类号： C08F214/28 , C08G65/226
摘要： The present invention relates to hexafluoropropylene oxide polymer composition and a process of preparing of hexafluoropropylene oxide polymer by an anionic polymerization, and in particular the hexafluoropropylene oxide polymer composition comprises an anionic initiator, a polar solvent, hexafluoropropylene and hexafluoropropylene oxide. The hexafluoropropylene oxide polymer is prepared under particular reaction conditions by using the composition, hexafluoropropylene oxide polymer prepared by using the composition according to a preparation process herein has a weight average molecular weight (Mw) of 1,500-4,000 at −10-20° C.
摘要翻译：本发明涉及六氟环氧丙烷聚合物组合物和通过阴离子聚合制备六氟环氧丙烷聚合物的方法，特别是六氟环氧丙烷聚合物组合物包括阴离子引发剂，极性溶剂，六氟丙烯和六氟环氧丙烷。六氟环氧丙烷聚合物通过使用组合物在特定反应条件下制备，通过使用根据本发明制备方法的组合物制备的六氟环氧丙烷聚合物在-10-20℃下的重均分子量（Mw）为1,500-4,000

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式