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1. 发明申请

US20110039682A1 METHOD FOR SYNTHESIZING ONE-DIMENSIONAL HELICAL NANOPOROUS STRUCTURES AND METHOD FOR SYNTHESIZING GLYCINE-DERIVED SURFACTANT FOR SYNTHESIZING HELICAL NANOPOROUS STRUCTURES 有权
标题翻译：用于合成一维螺旋纳米结构的方法和用于合成甘氨酸衍生的表面活性剂以合成螺旋形纳米结构的方法
公开(公告)号：US20110039682A1
公开(公告)日：2011-02-17
申请号：US12921457
申请日：2009-04-10
申请人： Sang Cheol Han , Yang Kim , Chung Kwon Park
发明人： Sang Cheol Han , Yang Kim , Chung Kwon Park
IPC分类号： C04B38/00 , C07C237/04
CPC分类号： C07C237/06 , C01B33/124 , C01B37/02
摘要： Disclosed herein are a method for synthesizing one-dimensional helical mesoporous structure, in which a self-assembled structure of a glycine-derived surfactant is used as a template at room temperature to synthesize the one-dimensional helical mesoporous silica structures having a uniform pore size and a method for synthesizing a glycine-derived surfactant for synthesizing the helical nanoporous structures, in which relatively expensive surfactant can be easily recovered using an organic solvent and reused, which provides economical and environment friendly effects and the glycine-derived surfactant is synthesized by homogeneously heating a reaction product of glycine and phthalic anhydride by dielectric heating with irradiation of microwave, whereby it is possible to realize high yield of the glycine-derived surfactant, shortened synthesis time and increase in energy efficiency, leading to improvement in productivity and reduction in production cost.
摘要翻译：本文公开了一种用于合成一维螺旋介孔结构的方法，其中在室温下将甘氨酸衍生的表面活性剂的自组装结构用作模板以合成具有均匀孔径的一维螺旋介孔二氧化硅结构以及用于合成用于合成螺旋纳米孔结构的甘氨酸衍生的表面活性剂的方法，其中相对昂贵的表面活性剂可以使用有机溶剂容易地回收并重复使用，这提供了经济和环境友好的作用，并且甘氨酸衍生的表面活性剂通过均匀合成通过微波照射的电介质加热加热甘氨酸和邻苯二甲酸酐的反应产物，从而可以实现甘氨酸衍生的表面活性剂的高产率，缩短合成时间和提高能量效率，从而提高生产率和降低生产成本。

2. 发明授权

US07598168B2 Method of fabricating dual damascene interconnection and etchant for stripping sacrificial layer 失效
标题翻译：制造双镶嵌互连的方法和用于剥离牺牲层的蚀刻剂
公开(公告)号：US07598168B2
公开(公告)日：2009-10-06
申请号：US11033208
申请日：2005-01-11
申请人： Sang-cheol Han , Kyoung-woo Lee , Mi-young Kim
发明人： Sang-cheol Han , Kyoung-woo Lee , Mi-young Kim
IPC分类号： H01L21/4763 , H01L21/461
CPC分类号： H01L21/76808 , H01L21/31111 , H01L21/31144 , H01L21/76829
摘要： A method of forming a dual damascene semiconductor interconnection and an etchant composition specially adapted for stripping a sacrificial layer in a dual damascene fabrication process without profile damage to a dual damascene pattern are provided. The method includes sequentially forming a first etch stop layer, a first intermetal dielectric, a second intermetal dielectric, and a capping layer on a surface of a semiconductor substrate on which a lower metal wiring is formed; etching the first intermetal dielectric, the second intermetal dielectric, and the capping layer to form a via; forming a sacrificial layer within the via; etching the sacrificial layer, the second intermetal dielectric, and the capping layer to form a trench; removing the sacrificial layer remaining around the via using an etchant composition including NH4F, HF, H2O and a surfactant; and forming an upper metal wiring within the thus formed dual damascene pattern including the via and the trench. The preferred etchant composition for stripping a sacrificial layer in the foregoing dual damascene process consists essentially of NH4F, HF, H2O and a surfactant.
摘要翻译：提供了形成双镶嵌半导体互连的方法和特别适于在双镶嵌制造工艺中剥离牺牲层而不对双镶嵌图案造成损伤的蚀刻剂组合物。该方法包括在其上形成有下金属布线的半导体衬底的表面上顺序地形成第一蚀刻停止层，第一金属间电介质，第二金属间电介质和覆盖层; 蚀刻第一金属间电介质，第二金属间电介质和封盖层以形成通孔; 在通孔内形成牺牲层; 蚀刻牺牲层，第二金属间电介质和覆盖层以形成沟槽; 使用包括NH 4 F，HF，H 2 O和表面活性剂的蚀刻剂组合物除去残留在通孔周围的牺牲层; 以及在由此形成的包括通孔和沟槽的双镶嵌图案中形成上金属布线。用于剥离前述双镶嵌工艺中的牺牲层的优选蚀刻剂组合物基本上由NH 4 F，HF，H 2 O和表面活性剂组成。

3. 发明授权

US07365021B2 Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution 失效
标题翻译：使用有机化合物和基于氟化物的缓冲溶液制造半导体器件的方法
公开(公告)号：US07365021B2
公开(公告)日：2008-04-29
申请号：US11122881
申请日：2005-05-05
申请人： Mi-Young Kim , Sang-Cheol Han , Tai-Hyoung Kim , Jeong-Wook Hwang , Hong-Seong Son
发明人： Mi-Young Kim , Sang-Cheol Han , Tai-Hyoung Kim , Jeong-Wook Hwang , Hong-Seong Son
IPC分类号： H01L21/00
CPC分类号： H01L21/76808 , H01L21/31111 , H01L21/31144 , H01L21/76829 , H01L21/76835
摘要： Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by forming a molding layer and an etching stop layer stacked thereon; forming a sacrificial layer on the etching stop layer so as to fill the contact hole; forming a photoresist layer with an opening so as to expose the sacrificial layer and such that the opening of the photoresist layer aligns with the contact hole; forming a trench in the molding layer to penetrate the sacrificial layer and the etching stop layer; and performing a wet etching on the semiconductor substrate having the trench to remove the photoresist layer and the sacrificial layer, wherein the wet etching step is performed using an organic compound and fluoride ion-based buffered solution.
摘要翻译：提供了用于制造半导体器件的方法，其包括以下步骤：在半导体衬底上依次形成金属互连和保护层; 在保护层上形成接触孔; 通过形成层叠在其上的成型层和蚀刻停止层来隔离接触孔; 在所述蚀刻停止层上形成牺牲层以填充所述接触孔; 形成具有开口的光致抗蚀剂层以暴露所述牺牲层，并且使得所述光致抗蚀剂层的开口与所述接触孔对齐; 在模制层中形成沟槽以穿透牺牲层和蚀刻停止层; 以及对具有沟槽的半导体衬底进行湿式蚀刻以去除光致抗蚀剂层和牺牲层，其中使用有机化合物和基于氟化物离子的缓冲溶液进行湿蚀刻步骤。

4. 发明申请

US20050260856A1 Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution 失效
标题翻译：使用有机化合物和基于氟化物的缓冲溶液制造半导体器件的方法
公开(公告)号：US20050260856A1
公开(公告)日：2005-11-24
申请号：US11122881
申请日：2005-05-05
申请人： Mi-Young Kim , Sang-Cheol Han , Tai-Hyoung Kim , Jeong-Wook Hwang , Hong-Seong Son
发明人： Mi-Young Kim , Sang-Cheol Han , Tai-Hyoung Kim , Jeong-Wook Hwang , Hong-Seong Son
IPC分类号： H01L21/306 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76808 , H01L21/31111 , H01L21/31144 , H01L21/76829 , H01L21/76835
摘要： Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by forming a molding layer and an etching stop layer stacked thereon; forming a sacrificial layer on the etching stop layer so as to fill the contact hole; forming a photoresist layer with an opening so as to expose the sacrificial layer and such that the opening of the photoresist layer aligns with the contact hole; forming a trench in the molding layer to penetrate the sacrificial layer and the etching stop layer; and performing a wet etching on the semiconductor substrate having the trench to remove the photoresist layer and the sacrificial layer, wherein the wet etching step is performed using an organic compound and fluoride ion-based buffered solution.
摘要翻译：提供了用于制造半导体器件的方法，其包括以下步骤：在半导体衬底上依次形成金属互连和保护层; 在保护层上形成接触孔; 通过形成层叠在其上的成型层和蚀刻停止层来隔离接触孔; 在所述蚀刻停止层上形成牺牲层以填充所述接触孔; 形成具有开口的光致抗蚀剂层以暴露所述牺牲层，并且使得所述光致抗蚀剂层的开口与所述接触孔对齐; 在模制层中形成沟槽以穿透牺牲层和蚀刻停止层; 以及对具有沟槽的半导体衬底进行湿式蚀刻以去除光致抗蚀剂层和牺牲层，其中使用有机化合物和基于氟化物离子的缓冲溶液进行湿蚀刻步骤。

5. 发明申请

US20050153566A1 Method of fabricating microelectronic device using super critical fluid 有权
标题翻译：使用超临界流体制造微电子器件的方法
公开(公告)号：US20050153566A1
公开(公告)日：2005-07-14
申请号：US11033712
申请日：2005-01-12
申请人： Sang-Cheol Han , Jun-Hwan Oh
发明人： Sang-Cheol Han , Jun-Hwan Oh
IPC分类号： H01L21/3205 , H01L21/00 , H01L21/302 , H01L21/461 , H01L21/768 , H01L21/8242
CPC分类号： H01L21/76808 , H01L21/76802 , H01L21/76829 , H01L21/76835
摘要： Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substrate, forming an HSQ layer covering at least a portion of the substrate, and thereafter removing at least portions of the HSQ layer using super critical fluid CO2.
摘要翻译：公开了制造具有改进的性能特征的微电子器件的方法，其特征在于使用超临界流体来执行材料去除步骤。在一个说明性实施例中，该方法包括制备衬底，形成覆盖衬底的至少一部分的HSQ层，然后使用超临界流体CO 2 2去除至少部分HSQ层。

6. 发明授权

US06547838B1 Sulfuric positive electrode for use in lithium secondary battery and method for manufacturing the same 失效
标题翻译：用于锂二次电池的硫酸正电极及其制造方法
公开(公告)号：US06547838B1
公开(公告)日：2003-04-15
申请号：US09703904
申请日：2000-11-02
申请人： Jai Young Lee , Hyo Jun Ahn , Sang Cheol Han , Young Soo Han , Sung Chul Park , Sang Min Lee
发明人： Jai Young Lee , Hyo Jun Ahn , Sang Cheol Han , Young Soo Han , Sung Chul Park , Sang Min Lee
IPC分类号： H01M600
CPC分类号： H01M10/052 , H01M4/02 , H01M4/04 , H01M4/0402 , H01M4/0416 , H01M4/136 , H01M4/1397 , H01M4/38 , H01M4/622 , H01M4/625 , H01M4/626 , Y10T29/49108
摘要： A sulfuric positive electrode for use in a lithium secondary battery whose life cycle is enhanced and a method for manufacturing the same are provided, in which nickel is added in sulfur that is an active material of a positive electrode. The sulfuric positive electrode manufactured by adding nickel that is an electrical conductor can solve the problem with respect to an electrode life cycle.
摘要翻译：提供寿命周期增加的锂二次电池中使用的硫酸正电极及其制造方法，其中在作为正极活性物质的硫中加入镍。通过添加作为电导体的镍制造的硫酸正电极可以解决关于电极寿命周期的问题。

7. 发明授权

US07351635B2 Method of fabricating microelectronic device using super critical fluid 有权
标题翻译：使用超临界流体制造微电子器件的方法
公开(公告)号：US07351635B2
公开(公告)日：2008-04-01
申请号：US11033712
申请日：2005-01-12
申请人： Sang-Cheol Han , Jun-Hwan Oh
发明人： Sang-Cheol Han , Jun-Hwan Oh
IPC分类号： H01L21/8242
CPC分类号： H01L21/76808 , H01L21/76802 , H01L21/76829 , H01L21/76835
摘要： Methods of fabricating a microelectronic device having improved performance characteristics are disclosed which are characterized by using super critical fluid to perform a material removal step. In one illustrative embodiment, the method includes preparing a substrate, forming an HSQ layer covering at least a portion of the substrate, and thereafter removing at least portions of the HSQ layer using super critical fluid CO2.
摘要翻译：公开了制造具有改进的性能特征的微电子器件的方法，其特征在于使用超临界流体来执行材料去除步骤。在一个说明性实施例中，该方法包括制备衬底，形成覆盖衬底的至少一部分的HSQ层，然后使用超临界流体CO 2 2去除至少部分HSQ层。

8. 发明申请

US20070007809A1 Chari with a combination back support and cover plate 失效
标题翻译： Chari与组合后支撑和盖板
公开(公告)号：US20070007809A1
公开(公告)日：2007-01-11
申请号：US10553772
申请日：2004-12-02
申请人： Sang Cheol Han
发明人： Sang Cheol Han
IPC分类号： B60N2/48
CPC分类号： A47C7/66 , A47C1/12 , A47C1/16
摘要： A a chair with a combination back support and cover plate is provided, which solves a burdensome affair that a user consistently holds up a back support folded on a seat until he or she sits on the seat, makes the back support automatically folded on the seat after use of the seat, to thereby enhance convenience of use, and prevents the back support from being unfolded upwards from the state where the back support has been folded on the seat due to wind, to thereby prevent the seat from being polluted due to dust or rainwater.
摘要翻译：提供了一种具有组合背部支撑和盖板的椅子，其解决了使用者一直握住折叠在座椅上的背部支撑件的负担，直到他或她坐在座椅上，使背部支撑件自动地折叠在座椅上在使用座椅之后，从而增强使用的便利性，并且防止背部支撑件由于风由于背部支撑件已经被折叠在座椅上的状态而向上展开，从而防止座椅被灰尘污染或雨水。

9. 发明申请

US20050176243A1 Method of fabricating dual damascene interconnection and etchant for stripping sacrificial layer 失效
标题翻译：制造双镶嵌互连的方法和用于剥离牺牲层的蚀刻剂
公开(公告)号：US20050176243A1
公开(公告)日：2005-08-11
申请号：US11033208
申请日：2005-01-11
申请人： Sang-cheol Han , Kyoung-woo Lee , Mi-young Kim
发明人： Sang-cheol Han , Kyoung-woo Lee , Mi-young Kim
IPC分类号： H01L21/28 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76808 , H01L21/31111 , H01L21/31144 , H01L21/76829
摘要： A method of forming a dual damascene semiconductor interconnection and an etchant composition specially adapted for stripping a sacrificial layer in a dual damascene fabrication process without profile damage to a dual damascene pattern are provided. The method includes sequentially forming a first etch stop layer, a first intermetal dielectric, a second intermetal dielectric, and a capping layer on a surface of a semiconductor substrate on which a lower metal wiring is formed; etching the first intermetal dielectric, the second intermetal dielectric, and the capping layer to form a via; forming a sacrificial layer within the via; etching the sacrificial layer, the second intermetal dielectric, and the capping layer to form a trench; removing the sacrificial layer remaining around the via using an etchant composition including NH4F, HF, H2O and a surfactant; and forming an upper metal wiring within the thus formed dual damascene pattern including the via and the trench. The preferred etchant composition for stripping a sacrificial layer in the foregoing dual damascene process consists essentially of NH4F, HF, H2O and a surfactant.
摘要翻译：提供了形成双镶嵌半导体互连的方法和特别适于在双镶嵌制造工艺中剥离牺牲层而不对双镶嵌图案造成损伤的蚀刻剂组合物。该方法包括在其上形成有下金属布线的半导体衬底的表面上顺序地形成第一蚀刻停止层，第一金属间电介质，第二金属间电介质和覆盖层; 蚀刻第一金属间电介质，第二金属间电介质和封盖层以形成通孔; 在通孔内形成牺牲层; 蚀刻牺牲层，第二金属间电介质和覆盖层以形成沟槽; 使用包括NH 4 F，HF，H 2 O和表面活性剂的蚀刻剂组合物除去残留在通孔周围的牺牲层; 以及在由此形成的包括通孔和沟槽的双镶嵌图案中形成上金属布线。用于剥离前述双镶嵌方法中的牺牲层的优选蚀刻剂组合物基本上由NH 4 F，HF，H 2 O和表面活性剂组成。

10. 发明授权

US09040448B2 Method of manufacturing spherical mesoporous silica containing dispersed silver nanoparticles, and spherical mesoporous silica manufactured by said method 有权
标题翻译：含有分散的银纳米颗粒的球形介孔二氧化硅的制造方法以及通过所述方法制造的球形介孔二氧化硅
公开(公告)号：US09040448B2
公开(公告)日：2015-05-26
申请号：US13640953
申请日：2010-10-13
申请人： Chung Kwon Park , Sang Cheol Han
发明人： Chung Kwon Park , Sang Cheol Han
IPC分类号： B01J23/66 , B01J20/28 , B82Y30/00 , B01J20/30 , B01J20/02 , B01J20/10
CPC分类号： B01J20/28007 , B01J20/0233 , B01J20/103 , B01J20/28083 , B01J20/28097 , B01J20/3057 , B01J20/3085 , B82Y30/00 , C01B33/12 , C01B33/18 , C01P2002/72 , C01P2004/03 , C01P2004/32 , C01P2004/62 , C01P2004/64 , C01P2006/12
摘要： The present invention relates to a method of preparing a spherical mesoporous silica structure containing silver nanoparticles dispersed therein by adding a silver nitrate solution to an aqueous surfactant solution and performing a sol-gel process and to spherical mesoporous silica prepared thereby. The spherical mesoporous silica is cost-effective compared to a conventional method that uses silver nanoparticles as a raw material, because the silver nitrate solution that is inexpensive compared to silver nanoparticles is used. Also, the spherical mesoporous silica can be with high productivity in large amounts, and thus is easily commercialized. Moreover, because silver nanoparticles are incorporated into the pores of the mesoporous silica, the silver nanoparticles are used stably and do not change color and odor. In addition, the spherical mesoporous silica exhibits various additional effects, including far-infrared ray emission and deodorization, attributable to silica.
摘要翻译：本发明涉及一种通过向表面活性剂水溶液中加入硝酸银溶液并进行溶胶 - 凝胶法制备其中分散有银纳米颗粒的球形介孔二氧化硅结构体和由其制备的球状介孔二氧化硅的方法。与使用银纳米颗粒作为原料的常规方法相比，使用球形介孔二氧化硅是成本有效的，因为使用与银纳米颗粒相比便宜的硝酸银溶液。此外，球状介孔二氧化硅可以大量高生产率，因此容易商业化。此外，由于银纳米颗粒结合到介孔二氧化硅的孔中，银纳米颗粒被稳定地使用并且不改变颜色和气味。此外，球状介孔二氧化硅表现出各种附加效果，包括由二氧化硅引起的远红外线发射和除臭。

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