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1. 发明授权

US11603584B2 Ferritic alloy and method of manufacturing nuclear fuel cladding tube using the same 有权
公开(公告)号：US11603584B2
公开(公告)日：2023-03-14
申请号：US16799612
申请日：2020-02-24
申请人： Sung Yong Lee , Hun Jang , Seung Jae Lee , Yoon Ho Kim , Dae Gyun Ko , Changheui Jang , Chaewon Kim , Hyunmyung Kim
发明人： Sung Yong Lee , Hun Jang , Seung Jae Lee , Yoon Ho Kim , Dae Gyun Ko , Changheui Jang , Chaewon Kim , Hyunmyung Kim
IPC分类号： C22C38/40 , C22C38/00 , C22C38/04 , C22C38/06 , C21D8/10
摘要： Embodiments of the disclosure relate to a ferritic alloy having excellent ability to withstand nuclear power plant accidents and a method of manufacturing a nuclear fuel cladding tube using the same. The alloy includes iron (Fe), aluminum (Al), chromium (Cr), and nickel (Ni). The nickel (Ni) may be included 0.5 to 10 wt % based on a total amount of the alloy. The chromium may be included 13 to 18 wt % based on the total amount of the alloy. The aluminum may be included 5 to 7 wt % based on the total amount of the alloy.

2. 发明授权

US09727704B2 Method for supporting post browsing in moving rights object of digital rights management and terminal thereof 有权
公开(公告)号：US09727704B2
公开(公告)日：2017-08-08
申请号：US13407259
申请日：2012-02-28
申请人： Seung-Jae Lee
发明人： Seung-Jae Lee
IPC分类号： G06F15/16 , G06F21/10
CPC分类号： G06F21/10 , G06F2221/0795
摘要： A digital rights management (DRM) including a transfer of a rights object (RO) to a second user in consideration of requirements of a movement of a rights object of a first user (a terminal, an equipment), charge, etc., by providing a post browsing session when the rights object occupied by the first user is transferred to a second user via a server.

3. 发明授权

US09135408B2 Method and device for managing authorization of right object in digital rights managment 有权
标题翻译：在数字版权管理中管理权利对象授权的方法和装置
公开(公告)号：US09135408B2
公开(公告)日：2015-09-15
申请号：US12372825
申请日：2009-02-18
申请人： Youn-Sung Chu , Seung-Jae Lee
发明人： Youn-Sung Chu , Seung-Jae Lee
IPC分类号： G06F21/00 , G06F15/16 , G06F21/10
CPC分类号： G06F21/10
摘要： Provided is a method for managing an authorization of digital rights, the method performed by a first server and comprising: receiving from a second server a drop domain authorization trigger message for an initiation of an authorization protocol to cease creating a domain rights object (RO) for a domain for which the first server has an authorization to create the domain RO, the trigger message including information on the domain; the domain being managed by the second server and the authorization being obtained by the first server from the second server checking status of the authorization; transmitting to the second server, a drop domain authorization request message including the ID of the domain; and receiving from the second server, a drop domain authorization response message including a status element indicating a result of processing of the request message based on content included in the request message.
摘要翻译：提供了一种用于管理数字权利的授权的方法，所述方法由第一服务器执行，并且包括：从第二服务器接收用于启动授权协议以停止创建域权限对象（RO）的丢弃域授权触发消息，对于第一服务器具有创建域RO的授权的域，触发消息包括关于域的信息; 所述域由所述第二服务器管理，并且所述授权由所述第一服务器从所述第二服务器获取所述授权的检查状态; 向所述第二服务器发送包括所述域的ID的丢弃域授权请求消息; 以及从所述第二服务器接收包括根据所述请求消息中包含的内容指示所述请求消息的处理结果的状态元素的丢弃域授权响应消息。

4. 发明授权

US09000165B2 Process for the preparation of anhydrous aripiprazole crystal form II 有权
标题翻译：制备无水阿立哌唑晶体的方法II
公开(公告)号：US09000165B2
公开(公告)日：2015-04-07
申请号：US14008167
申请日：2012-03-30
申请人： Soo Jin Choi , Seong Soo Oh , Yong Suk Jin , Yong Tae Kim , Seung Jae Lee , Jeong Hyun Son
发明人： Soo Jin Choi , Seong Soo Oh , Yong Suk Jin , Yong Tae Kim , Seung Jae Lee , Jeong Hyun Son
IPC分类号： C07D401/06 , C07D215/227 , A61K31/4709 , A61K31/496
CPC分类号： C07D215/227 , A61K31/4709 , A61K31/496
摘要： The present invention relates to a process for preparation of aripiprazole crystal form II by recrystallizing aripiprazole in a mixture of acetone and 1-methoxy-2-propanol or a single solvent of 1-methoxy-2-propanol. The simple process according to the present invention can produce aripiprazole crystal form II with high purity and high yield in a mass scale.
摘要翻译：本发明涉及通过将阿立哌唑在丙酮和1-甲氧基-2-丙醇或1-甲氧基-2-丙醇的单一溶剂的混合物中重结晶制备阿立哌唑晶型II的方法。根据本发明的简单方法可以以大规模生产高纯度和高产率的阿立哌唑晶型II。

5. 发明授权

US08940409B2 Organic light emitting material and organic light emitting device using the same 有权
标题翻译：有机发光材料和使用其的有机发光装置
公开(公告)号：US08940409B2
公开(公告)日：2015-01-27
申请号：US12654602
申请日：2009-12-24
申请人： Jong-Kwan Bin , Soon-Wook Cha , Seung-Jae Lee , In-Bum Song , Jung-Keun Kim , Do-Han Kim , Chun-Gun Park , Nam-Sung Cho
发明人： Jong-Kwan Bin , Soon-Wook Cha , Seung-Jae Lee , In-Bum Song , Jung-Keun Kim , Do-Han Kim , Chun-Gun Park , Nam-Sung Cho
IPC分类号： C09K11/06 , H01L51/54 , C07C255/51 , C07C15/62 , C07C43/205 , C07C43/225 , C07C255/54 , C07F7/08 , C09B23/14 , C09B57/00 , C09B57/10 , H01L51/00 , H05B33/14 , H01L51/50
CPC分类号： C07C255/51 , C07C15/62 , C07C43/2055 , C07C43/225 , C07C255/54 , C07C2603/50 , C07F7/0805 , C07F7/081 , C09B23/148 , C09B57/001 , C09B57/008 , C09B57/10 , C09K11/06 , C09K2211/1011 , H01L51/0054 , H01L51/5016 , H05B33/14 , Y10S428/917
摘要： Disclosed is an organic light emitting material having the following chemical formula, for improving luminous efficiency, where R1, R2, R3 and R4 denote materials selected from an aromatic group with 6-24 carbon atoms (C6-C24), the group being independently substituted or unsubstituted, preferably, an aromatic group with 6-24 carbon atoms (C6-C24), the group consisting of trimethylsilane (TMS), CN, halogen (F, Cl, Br) alkyl groups with 1-4 carbon atoms (C1-C4).
摘要翻译：公开了具有以下化学式的有机发光材料，用于提高发光效率，其中R1，R2，R3和R4表示选自具有6-24个碳原子的芳族基团（C6-C24）的材料，该基团独立地被取代或未取代的，优选具有6-24个碳原子的芳基（C6-C24），由具有1-4个碳原子的三甲基硅烷（TMS），CN，卤素（F，Cl，Br）烷基组成的组（C1- C4）。

6. 发明授权

US08771922B2 Copolymer for resist comprising novel acryl based monomer and resin composition for resist comprising the same 失效
标题翻译：用于抗蚀剂的共聚物，其包含新颖的基于丙烯酸的单体和包含其的抗蚀剂的树脂组合物
公开(公告)号：US08771922B2
公开(公告)日：2014-07-08
申请号：US13432218
申请日：2012-03-28
申请人： Jin Bong Shin , Jin Ho Kim , Dae Hyeon Shin , Seung Jae Lee
发明人： Jin Bong Shin , Jin Ho Kim , Dae Hyeon Shin , Seung Jae Lee
IPC分类号： G03F7/00 , C08F236/20 , C08F118/02
CPC分类号： C08F220/18 , C08F220/28 , C08F220/40 , C08F222/14 , C08F222/26 , C08F232/08 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A resist resin composition includes 100 parts by weight of a copolymer represented by Formula 3 below; 0.5 to 1.5 parts by weight of a photoacid generator and 700 to 1,500 parts by weight of a solvent: wherein R1, R2, and R3 are each independently a C1-30 alkyl group, a C3-30 cycloalkyl group, an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group, or an aldehyde group, R4, R5, and R6 are each independently hydrogen or a methyl group, and l, m, n, and o each independently refer to the number of repeating units in a main backbone and satisfy the conditions: l+m+n+o=1, 0≦l/(l+m+n+o)
摘要翻译：抗蚀剂树脂组合物包含100重量份由下式3表示的共聚物; 0.5〜1.5重量份的光酸产生剂和700〜1500重量份的溶剂：其中R1，R2和R3各自独立地为C1-30烷基，C3-30环烷基，醚基，酯基，羰基，缩醛基，环氧基，腈基或醛基，R 4，R 5和R 6各自独立地为氢或甲基，l，m，n和o各自独立地为是指主骨架中的重复单元数，满足条件：l + m + n + o = 1，0＆nlE; l /（1 + m + n + o）<0.4,0

7. 发明授权

US08735250B2 Methods of forming gates of semiconductor devices 有权
标题翻译：形成半导体器件栅极的方法
公开(公告)号：US08735250B2
公开(公告)日：2014-05-27
申请号：US13241957
申请日：2011-09-23
申请人： Jong-Won Lee , Bo-Un Yoon , Seung-Jae Lee
发明人： Jong-Won Lee , Bo-Un Yoon , Seung-Jae Lee
IPC分类号： H01L21/8234
CPC分类号： H01L21/28008 , H01L21/28105 , H01L21/823842 , H01L29/42376 , H01L29/49 , H01L29/513 , H01L29/66545
摘要： Methods of forming gates of semiconductor devices are provided. The methods may include forming a first recess in a first substrate region having a first conductivity type and forming a second recess in a second substrate region having a second conductivity type. The methods may also include forming a high-k layer in the first and second recesses. The methods may further include providing a first metal on the high-k layer in the first and second substrate regions, the first metal being provided within the second recess. The methods may additionally include removing at least portions of the first metal from the second recess while protecting materials within the first recess from removal. The methods may also include, after removing at least portions of the first metal from the second recess, providing a second metal within the second recess.
摘要翻译：提供了形成半导体器件的栅极的方法。所述方法可以包括在具有第一导电类型的第一衬底区域中形成第一凹槽，并在具有第二导电类型的第二衬底区域中形成第二凹部。所述方法还可以包括在第一和第二凹部中形成高k层。所述方法还可以包括在第一和第二衬底区域中的高k层上提供第一金属，第一金属设置在第二凹槽内。所述方法还可以包括从第二凹部移除第一金属的至少一部分，同时保护第一凹槽内的材料不被去除。所述方法还可以包括在从第二凹部去除第一金属的至少一部分之后，在第二凹部内提供第二金属。

8. 发明申请

US20140141283A1 METHOD FOR MANUFACTURING A FLUORESCENT RESIN FILM AND FLUORESCENT RESIN FILM MANUFACTURED THEREBY 审中-公开
标题翻译：制造荧光树脂膜和荧光树脂薄膜制造方法
公开(公告)号：US20140141283A1
公开(公告)日：2014-05-22
申请号：US14127878
申请日：2011-08-12
申请人： Seung Jae Lee , Na Na Park , Gyeong Seon Seon Park , Bo Kyoung Kim , Jong Rak Sohn , Chang Hoon Kwak
发明人： Seung Jae Lee , Na Na Park , Gyeong Seon Seon Park , Bo Kyoung Kim , Jong Rak Sohn , Chang Hoon Kwak
IPC分类号： C09K11/02 , B05D5/06
CPC分类号： C09K11/025 , B05D5/06 , C08J7/06 , C09K11/08
摘要： A method of manufacturing a phosphor resin film and a phosphor resin film manufactured thereby are provided. The method of manufacturing a phosphor resin film includes preparing a polymer slurry by mixing a polymer resin and a latent curing agent in a solvent, spreading the polymer slurry such that it has a film shape, drying the spread polymer slurry to form a semi-hardened resin film, and providing phosphor powder to the semi-hardened resin film. A phosphor resin film includes semi-hardened resin film including a polymer resin and a latent curing agent and phosphors uniformly formed on one surface of the semi-hardened resin film.
摘要翻译：提供了制造荧光体树脂膜的方法和由此制造的荧光体树脂膜。制造荧光体树脂膜的方法包括通过在溶剂中混合聚合物树脂和潜在性固化剂来制备聚合物浆料，将聚合物浆料铺展成膜形状，干燥扩展聚合物浆料以形成半硬化树脂膜，并向半硬化树脂膜提供荧光体粉末。荧光体树脂膜包括半固化树脂膜，其包含聚合物树脂和潜在性固化剂以及均匀地形成在半硬化树脂膜的一个表面上的荧光体。

9. 发明授权

US08691642B2 Method of fabricating semiconductor device including forming epitaxial blocking layers by nitridation process 有权
标题翻译：制造半导体器件的方法包括通过氮化处理形成外延阻挡层
公开(公告)号：US08691642B2
公开(公告)日：2014-04-08
申请号：US13238611
申请日：2011-09-21
申请人： Jung-Chan Lee , Seung-Jae Lee , Yu-Gyun Shin , Dae-Young Kwak , Byung-Suk Jung
发明人： Jung-Chan Lee , Seung-Jae Lee , Yu-Gyun Shin , Dae-Young Kwak , Byung-Suk Jung
IPC分类号： H01L21/8238
CPC分类号： H01L21/823814 , H01L21/823425
摘要： A method of fabricating a semiconductor device includes forming gate structures on PMOS and NMOS transistor regions of the semiconductor substrate, forming epitaxial blocking layers on source/drain regions of PMOS and NMOS transistor regions using a nitridation process, then selectively removing one of the epitaxial blocking layers, and using a SEG process to form an epitaxial layer on respective source/drain regions while shielding the other source/drain regions with a remaining epitaxial blocking layer.
摘要翻译：制造半导体器件的方法包括在半导体衬底的PMOS和NMOS晶体管区域上形成栅极结构，使用氮化工艺在PMOS和NMOS晶体管区域的源极/漏极区域上形成外延阻挡层，然后选择性地去除外延阻挡层并且使用SEG工艺在相应的源极/漏极区域上形成外延层，同时用剩余的外延阻挡层屏蔽另一个源极/漏极区域。

10. 发明授权

US08671452B2 Apparatus and method for moving rights object from one device to another device via server 失效
标题翻译：通过服务器将权限对象从一个设备移动到另一个设备的装置和方法
公开(公告)号：US08671452B2
公开(公告)日：2014-03-11
申请号：US11657481
申请日：2007-01-25
申请人： Seung-Jae Lee , Te-Hyun Kim , Youn-Sung Chu , Sung-Mu Son , Kiran Kumar Keshavamurthy
发明人： Seung-Jae Lee , Te-Hyun Kim , Youn-Sung Chu , Sung-Mu Son , Kiran Kumar Keshavamurthy
IPC分类号： G06F21/00
CPC分类号： H04L9/0825 , G06F21/10 , H04L9/0822 , H04L9/3247 , H04L9/3265 , H04L63/0428 , H04L2209/603 , H04L2463/101
摘要： An apparatus and method for transferring a Rights Object (RO) for a content between devices via a server, wherein a sending device converts a first RO taken by itself to encode into a second RO, and sends an RO move request message including the second RO to the server, whereas the server converts the second RO included in the RO move request message into a third RO and transfers the third RO to a receiving device, whereby the receiving device receives the third RO from the server for installation, wherein the sending device deletes or modifies the first RO at an appropriate time point.
摘要翻译：一种用于经由服务器在设备之间传送用于内容的权利对象（RO）的装置和方法，其中发送设备将其自身获取的第一RO转换为编码为第二RO，并且发送包括第二RO的RO移动请求消息而服务器将RO移动请求消息中包括的第二RO转换为第三RO，并将第三RO转移到接收设备，由此接收设备从服务器接收第三RO用于安装，其中发送设备在适当的时间点删除或修改第一个RO。

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