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1. 发明授权

US08916923B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08916923B2
公开(公告)日：2014-12-23
申请号：US13225025
申请日：2011-09-02
申请人： Ryuji Ohba
发明人： Ryuji Ohba
IPC分类号： H01L29/792 , H01L21/28 , H01L29/423 , H01L29/51 , B82Y10/00
CPC分类号： H01L29/513 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/4234
摘要： According to one embodiment, in a nonvolatile semiconductor memory in which a charge store layer is formed on a tunnel insulating film formed on a channel region of a semiconductor substrate, a first nanoparticle layer containing first conductive nanoparticles is formed on the channel side, and a second nanoparticle layer containing a plurality of second conductive nanoparticles having an average particle size larger than the first conductive nanoparticles is formed on the charge store layer side. An average energy value ΔE1 required for charging one electron in the first conductive nanoparticle is smaller than an average energy value ΔE required for charging one electron in the second conductive nanoparticle, and a difference between ΔE1 and ΔE is larger than a heat fluctuation energy (kBT).
摘要翻译：根据一个实施例，在形成在半导体衬底的沟道区上的隧道绝缘膜上形成电荷存储层的非易失性半导体存储器中，在沟道侧形成包含第一导电纳米颗粒的第一纳米颗粒层，在电荷存储层侧形成含有平均粒径大于第一导电性纳米粒子的多个第二导电性纳米粒子的第二纳米粒子层。在第一导电纳米颗粒中对一个电子充电所需的平均能量值＆Dgr; E1小于在第二导电纳米颗粒中对一个电子进行充电所需的平均能量值＆Dgr; E，并且Dgr; E1和＆Dgr之间的差异为大于热波动能（kBT）。

2. 发明授权

US08742489B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08742489B2
公开(公告)日：2014-06-03
申请号：US13427587
申请日：2012-03-22
申请人： Ryuji Ohba , Daisuke Matsushita
发明人： Ryuji Ohba , Daisuke Matsushita
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： B82Y10/00 , G11C16/0466 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/7881 , H01L29/792
摘要： According to one embodiment, a nonvolatile semiconductor memory including a first gate insulating film formed on a channel region of a semiconductor substrate, a first particle layer formed in the first gate insulating film, a charge storage part formed on the first gate insulating film, a second gate insulating film which is formed on the charge storage part, a second particle layer formed in the second gate insulating film, and a gate electrode formed on the second gate insulating film. The first particle layer includes first conductive particles that satisfy Coulomb blockade conditions. The second particle layer includes second conductive particles that satisfy Coulomb blockade conditions and differs from the first conductive particles in average particle diameter.
摘要翻译：根据一个实施例，一种非易失性半导体存储器，包括形成在半导体衬底的沟道区上的第一栅极绝缘膜，形成在第一栅极绝缘膜中的第一颗粒层，形成在第一栅极绝缘膜上的电荷存储部，形成在电荷存储部上的第二栅极绝缘膜，形成在第二栅极绝缘膜中的第二粒子层和形成在第二栅极绝缘膜上的栅电极。第一颗粒层包括满足库仑阻挡条件的第一导电颗粒。第二粒子层包含满足库仑阻挡条件的第二导电粒子，与第一导电粒子的平均粒径不同。

3. 再颁专利

USRE44630E1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：USRE44630E1
公开(公告)日：2013-12-10
申请号：US13616208
申请日：2012-09-14
申请人： Tetsuya Kai , Ryuji Ohba , Yoshio Ozawa
发明人： Tetsuya Kai , Ryuji Ohba , Yoshio Ozawa
IPC分类号： H01L21/331
CPC分类号： H01L21/28273 , B82Y10/00 , H01L21/28282 , H01L27/11521 , H01L29/42332 , H01L29/7881
摘要： A semiconductor device includes a semiconductor substrate, and a nonvolatile memory cell provided on the semiconductor substrate, the nonvolatile memory cell including a tunnel insulating film provided on a surface of the semiconductor substrate, the tunnel insulating film including semiconductor grains, the semiconductor grains included in both end portions of the tunnel insulating film having smaller grain size than the semiconductor grains included in other portions of the tunnel insulating film, a charge storage layer provided on the tunnel insulating film, an insulating film provided on the charge storage layer, and a control gate electrode provided on the insulating film.
摘要翻译：半导体器件包括半导体衬底和设置在半导体衬底上的非易失性存储单元，所述非易失性存储单元包括设置在所述半导体衬底的表面上的隧道绝缘膜，所述隧道绝缘膜包括半导体晶粒，所述半导体晶粒包括在隧道绝缘膜的两端部比隧道绝缘膜的其他部分所包含的半导体晶粒小的晶粒尺寸，隧道绝缘膜上设置的电荷存储层，设置在电荷存储层上的绝缘膜，以及控制栅电极设置在绝缘膜上。

4. 发明申请

US20120235219A1 SEMICONDUCTOR MEMORY 有权
标题翻译：半导体存储器
公开(公告)号：US20120235219A1
公开(公告)日：2012-09-20
申请号：US13419930
申请日：2012-03-14
申请人： Ryuji OHBA
发明人： Ryuji OHBA
IPC分类号： H01L29/78
CPC分类号： H01L21/28273 , B82Y10/00 , G11C2216/06 , H01L21/28282 , H01L29/42332
摘要： In one embodiment, there is provided a semiconductor memory that includes: a semiconductor substrate having a channel region; a first tunnel insulating film on the channel region; a first fine particle layer on the first tunnel insulating film, the first fine particle layer including first conductive fine particles; a second tunnel insulating film on the first fine particle layer; a second fine particle layer on the second tunnel insulating film, the second fine particle layer including second conductive fine particles; a third tunnel insulating film on the second fine particle layer; a third fine particle layer on the third tunnel insulating film, the third fine particle layer including third conductive fine particles. A mean particle diameter of the second conductive fine particles is larger than that of the first conductive fine particles and that of the third conductive fine particles.
摘要翻译：在一个实施例中，提供一种半导体存储器，其包括：具有沟道区的半导体衬底; 在通道区域上的第一隧道绝缘膜; 所述第一隧道绝缘膜上的第一细颗粒层，所述第一细颗粒层包括第一导电细颗粒; 在第一细颗粒层上的第二隧道绝缘膜; 在第二隧道绝缘膜上的第二细颗粒层，第二微粒层包括第二导电细颗粒; 第二细颗粒层上的第三隧道绝缘膜; 第三隧道绝缘膜上的第三细颗粒层，第三细颗粒层包括第三导电细颗粒。第二导电性微粒的平均粒径大于第一导电性微粒和第三导电性微粒的平均粒径。

5. 发明授权

US07138651B2 Logic apparatus and logic circuit 有权
公开(公告)号：US07138651B2
公开(公告)日：2006-11-21
申请号：US10893916
申请日：2004-07-20
申请人： Ken Uchida , Junji Koga , Ryuji Ohba
发明人： Ken Uchida , Junji Koga , Ryuji Ohba
IPC分类号： H01L29/06
CPC分类号： B82Y10/00 , H01L29/7888 , H01L49/006 , H03K19/08
摘要： A logic apparatus comprises a first single-electron device formed of a first conductive island, two first tunnel barriers with the first conductive island interposed, first and second electrodes, and a first charge storage region, and a second single-electron device formed of a second conductive island, second tunnel barriers with the second island interposed, third and fourth electrodes, and a second charge storage region, the first electrode of the first single-electron device being connected to the third electrode of the second single-electron device being connected to each other.

6. 发明授权

US5734181A Semiconductor device and manufacturing method therefor 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5734181A
公开(公告)日：1998-03-31
申请号：US716713
申请日：1996-09-12
申请人： Ryuji Ohba , Tomohisa Mizuno , Makoto Yoshimi , Kazuya Ohuchi
发明人： Ryuji Ohba , Tomohisa Mizuno , Makoto Yoshimi , Kazuya Ohuchi
IPC分类号： H01L29/165 , H01L21/265 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/06 , H01L29/08 , H01L29/78 , H01L29/786 , H01L31/0312 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/66477 , H01L21/26506 , H01L21/8234 , H01L21/823814 , H01L27/0605 , H01L29/0847 , H01L29/66575 , H01L29/66659 , H01L29/66772 , H01L29/7838 , H01L29/78618 , H01L21/26586
摘要： A semiconductor device having a MISFET includes: a silicon substrate (2) having a semiconductor region on a surface thereof; a source region (10a) and a drain region (10b) formed in the semiconductor region separately; a channel region formed in the semiconductor region and between the source region and the drain region; a gate electrode (6) formed on the channel region; and a region (8a) formed of Si.sub.1-x C.sub.x overlapping the source region and having a carbon concentration enough to increase an energy gap therein beyond that in the channel region. Further, the MISFET is constructed in such a way that a hetero-junction surface formed between the region formed of Si.sub.1-x C.sub.x (8a) and the other portion of the semiconductor region on the side of the channel region exists at an interface between the source region (10a) and the channel region or in the vicinity thereof, in order to realize a high speed operation, even if the device is microminiaturized.
摘要翻译：具有MISFET的半导体器件包括：在其表面上具有半导体区域的硅衬底（2）; 分别形成在半导体区域中的源极区域（10a）和漏极区域（10b）; 形成在所述半导体区域中，并且在所述源极区域和所述漏极区域之间的沟道区域; 形成在所述沟道区上的栅电极（6）和由Si1-xCx形成的区域（8a），其与源极区域重叠并且具有足以增加其中的能隙的碳浓度超过沟道区域中的能隙。此外，MISFET被构造成使得形成在由Si1-xCx（8a）形成的区域和沟道区域侧的半导体区域的另一部分之间的异质结表面存在于源极区域（10a）和通道区域或其附近，以便实现高速操作，即使该装置被微型化。

7. 发明申请

US20120061746A1 NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20120061746A1
公开(公告)日：2012-03-15
申请号：US13225025
申请日：2011-09-02
申请人： Ryuji Ohba
发明人： Ryuji Ohba
IPC分类号： H01L29/792
CPC分类号： H01L29/513 , B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/4234
摘要： According to one embodiment, in a nonvolatile semiconductor memory in which a charge store layer is formed on a tunnel insulating film formed on a channel region of a semiconductor substrate, a first nanoparticle layer containing first conductive nanoparticles is formed on the channel side, and a second nanoparticle layer containing a plurality of second conductive nanoparticles having an average particle size larger than the first conductive nanoparticles is formed on the charge store layer side. An average energy value ΔE1 required for charging one electron in the first conductive nanoparticle is smaller than an average energy value ΔE required for charging one electron in the second conductive nanoparticle, and a difference between ΔE1 and ΔE is larger than a heat fluctuation energy (kBT).
摘要翻译：根据一个实施例，在形成在半导体衬底的沟道区上的隧道绝缘膜上形成电荷存储层的非易失性半导体存储器中，在沟道侧形成含有第一导电纳米颗粒的第一纳米颗粒层，在电荷存储层侧形成含有平均粒径大于第一导电性纳米粒子的多个第二导电性纳米粒子的第二纳米粒子层。在第一导电纳米颗粒中对一个电子充电所需的平均能量值＆Dgr; E1小于在第二导电纳米颗粒中对一个电子进行充电所需的平均能量值＆Dgr; E，并且Dgr; E1和＆Dgr之间的差异为大于热波动能（kBT）。

8. 发明申请

US20070296025A1 RANDOM NUMBER GENERATING DEVICE 有权
标题翻译：随机数生成装置
公开(公告)号：US20070296025A1
公开(公告)日：2007-12-27
申请号：US11743265
申请日：2007-05-02
申请人： Mari Matsumoto , Ryuji Ohba , Shinobu Fujita
发明人： Mari Matsumoto , Ryuji Ohba , Shinobu Fujita
IPC分类号： H01L29/792
CPC分类号： G06F7/588 , H03B29/00
摘要： A random number generating device includes a semiconductor device including a source region, a drain region, a channel region provided between the source region and the drain region, and an insulating portion provided on the channel region, the insulating portion including a trap insulating film having traps based on dangling bonds and expressed by Six(SiO2)y(Si3N4)1-yMz (M is an element other than Si, O, and N, x≧0, 1≧y≧0, z≧0, the case where x=0 and y=1 and z=0 is excluded), conductivity of the channel region varying randomly depending on the amount of charge caught in the traps, and a random number generating unit connected to the semiconductor device and generating random numbers based on a random variation in the conductivity of the channel region.
摘要翻译：随机数发生装置包括：半导体器件，包括源区域，漏极区域，设置在源极区域和漏极区域之间的沟道区域;以及绝缘部分，设置在沟道区域上，绝缘部分包括捕获绝缘膜，基于悬挂键并由Si x Si（SiO 2）y（Si 3 N）3表示的陷阱（M是除Si，O和N之外的元素，x> = 0,1，= y> = 0，z> = 0，x = 0且y = 1，z = 0的情况除外），根据陷阱中捕获的电荷量随机地变化的信道区域的导电率和连接的随机数发生单元并且基于沟道区域的导电性的随机变化产生随机数。

9. 发明授权

US07111029B2 Random number generating circuit 失效
公开(公告)号：US07111029B2
公开(公告)日：2006-09-19
申请号：US10235827
申请日：2002-09-06
申请人： Shinobu Fujita , Ken Uchida , Ryuji Ohba , Junji Koga
发明人： Shinobu Fujita , Ken Uchida , Ryuji Ohba , Junji Koga
IPC分类号： G06F1/02
CPC分类号： H04L9/0861 , G06F7/588
摘要： A random number generating circuit can generate random numbers with high randomness, and can be made as a compact integrated circuit. The random number generating circuit includes an uncertain logic circuit having a flip-flop type logic circuit that gives digital output values not determined definitely by a digital input value, and an equalizing circuit having an exclusive OR operating circuit for equalizing appearance frequencies of “0” and “1” in the digital output values output from the uncertain logic circuit.

10. 发明授权

US08587050B2 Semiconductor memory 有权
标题翻译：半导体存储器
公开(公告)号：US08587050B2
公开(公告)日：2013-11-19
申请号：US13419930
申请日：2012-03-14
申请人： Ryuji Ohba
发明人： Ryuji Ohba
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , B82Y10/00 , G11C2216/06 , H01L21/28282 , H01L29/42332
摘要： In one embodiment, there is provided a semiconductor memory that includes: a semiconductor substrate having a channel region; a first tunnel insulating film on the channel region; a first fine particle layer on the first tunnel insulating film, the first fine particle layer including first conductive fine particles; a second tunnel insulating film on the first fine particle layer; a second fine particle layer on the second tunnel insulating film, the second fine particle layer including second conductive fine particles; a third tunnel insulating film on the second fine particle layer; a third fine particle layer on the third tunnel insulating film, the third fine particle layer including third conductive fine particles. A mean particle diameter of the second conductive fine particles is larger than that of the first conductive fine particles and that of the third conductive fine particles.
摘要翻译：在一个实施例中，提供一种半导体存储器，其包括：具有沟道区的半导体衬底; 在通道区域上的第一隧道绝缘膜; 所述第一隧道绝缘膜上的第一细颗粒层，所述第一细颗粒层包括第一导电细颗粒; 在第一细颗粒层上的第二隧道绝缘膜; 在第二隧道绝缘膜上的第二细颗粒层，第二微粒层包括第二导电细颗粒; 第二细颗粒层上的第三隧道绝缘膜; 第三隧道绝缘膜上的第三细颗粒层，第三细颗粒层包括第三导电细颗粒。第二导电性微粒的平均粒径大于第一导电性微粒和第三导电性微粒的平均粒径。

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