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    • 3. 发明申请
    • NANOFABRICATION BASED ON SAM GROWTH
    • 基于SAM生长的南非
    • US20090272715A1
    • 2009-11-05
    • US11722103
    • 2005-12-14
    • Dirk BurdinskiRuben Bernardus Alfred Sharpe
    • Dirk BurdinskiRuben Bernardus Alfred Sharpe
    • B05D5/12H01B13/00
    • G03F7/0002B82Y10/00B82Y40/00
    • The present invention relates to a process of nano fabrication based on nucleated SAM growth, to patterned substrates prepared thereby, to a nano wire or grid of nanowires prepared thereby and to electronic devices including the same. In particular, there is provided a process which comprises applying a first SAM-forming molecular species to a first surface region of the substrate surface, so as to provide a first SAM defining a scaffold pattern on the first surface region; and applying a second SAM-forming molecular species to at least a second surface region of said substrate surface which is not covered by the first SAM, whereby a second replica SAM comprising the second SAM-forming molecular species selectively forms on substrate surface adjacent to at least one edge of said first SAM.
    • 本发明涉及一种基于有核SAM生长的纳米制造方法,由其制备的图案化衬底,由其制备的纳米线或纳米线网格以及包括该纳米线的电子器件。 特别地,提供了一种方法,其包括将第一SAM形成分子物质施加到衬底表面的第一表面区域,以便在第一表面区域上提供限定支架图案的第一SAM; 以及将第二SAM形成分子物质施加到所述基底表面的至少第二表面区域,所述第二表面区域未被所述第一SAM覆盖,由此包含所述第二SAM形成分子种类的第二复制SAM选择性地形成在邻近于 所述第一SAM的至少一个边缘。