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1. 发明授权

US5486939A Thin-film structure with insulating and smoothing layers between crossing conductive lines 失效
标题翻译：薄膜结构在交叉导线之间具有绝缘和平滑层
公开(公告)号：US5486939A
公开(公告)日：1996-01-23
申请号：US284885
申请日：1994-04-28
申请人： Ronald T. Fulks
发明人： Ronald T. Fulks
IPC分类号： H01L23/498 , G02F1/1333 , H01L23/48
CPC分类号： H01L23/49866 , H01L2924/0002 , H01L2924/3011
摘要： A thin-film structure includes conductive lines that cross in a crossover region. A first insulating layer covers the lower conductive line. A second insulating layer is sufficiently thick to isolate signals in the lines and to prevent coupling. Each of the lower conductive line and the second insulating layer can have an edge. A smoothing layer is formed over the edges so that the upper conductive line forms continuously, providing an electrical connection between two points on opposite sides of the edges. The insulating layers can be nitride, separated by an undoped layer of amorphous silicon, so that the same layer sequence can be used as in a thin-film transistor. The smoothing layer can be n+ doped amorphous silicon. The conductive lines can be scan and data lines in an AMLCD or other array.
摘要翻译：薄膜结构包括在交叉区域中交叉的导线。第一绝缘层覆盖下导电线。第二绝缘层足够厚以隔离线路中的信号并防止耦合。下导电线和第二绝缘层中的每一个可以具有边缘。在边缘上形成平滑层，使得上导电线连续地形成，从而在边缘的相对侧上的两个点之间提供电连接。绝缘层可以是氮化物，由未掺杂的非晶硅层分离，使得可以像薄膜晶体管那样使用相同的层序列。平滑层可以是n +掺杂的非晶硅。导线可以是AMLCD或其他阵列中的扫描和数据线。

2. 发明授权

US5814530A Producing a sensor with doped microcrystalline silicon channel leads 失效
标题翻译：生产具有掺杂微晶硅通道引线的传感器
公开(公告)号：US5814530A
公开(公告)日：1998-09-29
申请号：US721813
申请日：1996-09-27
申请人： Chuang-Chuang Tsai , William W. Yao , Ronald T. Fulks
发明人： Chuang-Chuang Tsai , William W. Yao , Ronald T. Fulks
IPC分类号： G01T1/24 , H01L21/336 , H01L27/146 , H01L29/786 , H01L31/09 , H01L21/00
CPC分类号： H01L27/14603 , H01L27/14676 , H01L27/14692
摘要： In producing a sensor device with a sensing element and a thin film transistor, a semiconductor layer with microcrystalline silicon (.mu.c-Si) is produced in which semiconductor channel leads are formed. The .mu.c-Si has a structure that prevents formation of bubbles at the sides of the semiconductor layer during subsequent production of a sensing element in a silicon-based layer. The semiconductor layer can be a deposited doped layer of .mu.c-Si, or a layer of intrinsic .mu.c-Si can be doped. The .mu.c-Si layer can be deposited with a sufficiently small amount of hydrogen to prevent formation of bubbles; it can be deposited with crystalline grain structures permitting hydrogen to dissipate at a sufficient rate to prevent formation of bubbles; or its interfaces can be formed with sufficiently stability to prevent formation of bubbles.
摘要翻译：在制造具有感测元件和薄膜晶体管的传感器装置时，制造其中形成半导体沟道引线的具有微晶硅（μc-Si）的半导体层。在随后在硅基层中制造感测元件时，mu c-Si具有防止在半导体层侧面形成气泡的结构。半导体层可以是μc-Si的沉积掺杂层，或者可以掺杂本征的mu c-Si层。可以用足够少量的氢沉积μc-Si层以防止气泡的形成; 可以以允许氢以足够的速率散发以防止气泡形成的晶粒结构沉积; 或者其界面可以形成为具有足够的稳定性以防止形成气泡。

3. 发明授权

US5621556A Method of manufacturing active matrix LCD using five masks 失效
标题翻译：使用五个掩模制造有源矩阵LCD的方法
公开(公告)号：US5621556A
公开(公告)日：1997-04-15
申请号：US453732
申请日：1995-05-30
申请人： Ronald T. Fulks , William Yao , Chuang C. Tsai
发明人： Ronald T. Fulks , William Yao , Chuang C. Tsai
IPC分类号： G02F1/136 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L21/265
CPC分类号： G02F1/136209 , G02F1/136227 , G02F1/136286 , G02F1/1368 , H01L27/124 , H01L27/1244 , H01L27/1248 , H01L27/1288
摘要： The invention provides a method for manufacturing an active matrix liquid crystal displaying device having a plurality of thin film transistors using five masks. A plurality of gate electrodes are formed using a first mask. A plurality of etch stoppers are formed over the gate electrodes using a second mask. A plurality of chain electrodes and a plurality of source electrodes are formed using a third mask. A passivation layer including via holes is formed using a fourth mask. A plurality of pixel electrodes are formed using a fifth mask.
摘要翻译：本发明提供一种使用五个掩模制造具有多个薄膜晶体管的有源矩阵液晶显示装置的方法。使用第一掩模形成多个栅电极。使用第二掩模在栅电极之上形成多个蚀刻停止器。使用第三掩模形成多个链电极和多个源电极。使用第四掩模形成包括通孔的钝化层。使用第五掩模形成多个像素电极。

4. 发明授权

US06245602B1 Top gate self-aligned polysilicon TFT and a method for its production 有权
标题翻译：顶栅自对准多晶硅TFT及其制造方法
公开(公告)号：US06245602B1
公开(公告)日：2001-06-12
申请号：US09442407
申请日：1999-11-18
申请人： Jackson Ho , Ronald T. Fulks
发明人： Jackson Ho , Ronald T. Fulks
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , H01L29/78633
摘要： A top gate, self-aligned polysilicon (poly-Si) thin film transistor (TFT) is formed using a single laser anneal to crystallize the active silicon and to activate the source-drain region. The poly-Si TFT includes a substrate, dummy gate, a barrier oxide layer, a polysilicon pattern having a source region and a drain region, a gate oxide, and a gate.
摘要翻译：使用单次激光退火形成顶栅，自对准多晶硅（poly-Si）薄膜晶体管（TFT），以使活性硅结晶并激活源 - 漏区。多晶硅TFT包括基板，伪栅极，阻挡氧化物层，具有源极区域和漏极区域的多晶硅图案，栅极氧化物和栅极。

5. 发明授权

US5959312A Sensor with doped microcrystalline silicon channel leads with bubble formation protection means 失效
标题翻译：具有掺杂微晶硅通道的传感器带有气泡形成保护装置
公开(公告)号：US5959312A
公开(公告)日：1999-09-28
申请号：US714934
申请日：1996-09-27
申请人： Chuang-Chuang Tsai , William W. Yao , Ronald T. Fulks
发明人： Chuang-Chuang Tsai , William W. Yao , Ronald T. Fulks
IPC分类号： H01L27/146 , H01L29/786 , G01T1/24
CPC分类号： H01L27/14676 , H01L27/14603 , H01L27/14692
摘要： A sensor device includes a sensing element and a thin film transistor (TFT), and the TFT's channel leads include semiconductor channel leads formed in a layer of microcrystalline silicon (.mu.c-Si). The sensing element is formed in a semiconductor layer that includes silicon-based material and is over the .mu.c-Si layer. Each of the semiconductor channel leads has a structure that prevents formation of bubbles at the lower and upper sides of the .mu.c-Si layer during production of the sensing element. The TFT's channel can be formed in a layer of intrinsic silicon-based material under the .mu.c-Si layer and the .mu.c-Si layer can be a deposited doped layer; or the TFT's channel can be formed in an intrinsic .mu.c-Si layer in which the leads are formed by implanting a dopant. The .mu.c-Si layer can include a sufficiently small amount of hydrogen to prevent formation of bubbles; it can include crystalline grain structures permitting hydrogen to dissipate at a sufficient rate to prevent formation of bubbles; or it can have interfaces sufficiently stable to prevent formation of bubbles.
摘要翻译：传感器装置包括感测元件和薄膜晶体管（TFT），TFT的沟道引线包括形成在微晶硅层（mu c-Si）中的半导体沟道引线。感测元件形成在包括硅基材料并在μ-Si-Si层之上的半导体层中。每个半导体通道引线具有防止在感测元件的制造过程中在mu-Si层的下侧和上侧形成气泡的结构。 TFT沟道可以形成在μ-Si层下的本征硅基材料层中，并且μ-Si层可以是沉积的掺杂层; 或者TFT的沟道可以形成在其中通过注入掺杂剂形成引线的本征mu c-Si层中。 mu c-Si层可以包括足够少量的氢以防止气泡的形成; 它可以包括允许氢以足够的速率散发以防止气泡形成的晶粒结构; 或者它可以具有足够稳定的界面以防止形成气泡。

6. 发明授权

US5867242A Electrically isolated pixel element in a low voltage activated active matrix liquid crystal display and method 失效
标题翻译：电离孤立像素元件在低电压激活有源矩阵液晶显示和方法
公开(公告)号：US5867242A
公开(公告)日：1999-02-02
申请号：US840443
申请日：1997-04-01
申请人： William W. Yao , Ronald T. Fulks
发明人： William W. Yao , Ronald T. Fulks
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , G02F1/1333
CPC分类号： H01L27/1214 , G02F1/136209 , G02F1/136227 , G02F1/136286 , G02F1/1368
摘要： The present invention is a novel pixel structure, and method for making the same, that reduces wasteful voltage drop associated with other pixel structures that cover their pixel elements with a final passivation layer. The presently claimed pixel structure is a combination of a thin film transistor (TFT), an associated pixel element, and a passivation layer. The TFT is first deposited atop a suitable substrate and patterned. Then, the passivation layer is deposited on top of the thin film transistor. Contact cuts are made into the passivation layer where the pixel element is to contact the TFT. Finally, the pixel element is deposited--lying atop the passivation layer and contacting with the underlying TFT where the contact cuts were made in the passivation layer.
摘要翻译：本发明是一种新颖的像素结构及其制造方法，其减少了与其最终钝化层覆盖其像素元件的其他像素结构相关联的浪费电压降。目前要求保护的像素结构是薄膜晶体管（TFT），相关联的像素元件和钝化层的组合。首先将TFT沉积在合适的衬底上并进行图案化。然后，钝化层沉积在薄膜晶体管的顶部。接触切口进入钝化层，其中像素元件将与TFT接触。最后，将像素元件沉积在钝化层的顶部并与底层TFT接触，其中在钝化层中形成接触切口。

7. 发明授权

US5518805A Hillock-free multilayer metal lines for high performance thin film structures 失效
标题翻译：用于高性能薄膜结构的无丘陵多层金属线
公开(公告)号：US5518805A
公开(公告)日：1996-05-21
申请号：US234897
申请日：1994-04-28
申请人： Jackson H. Ho , Ronald T. Fulks , Tzu-Chin Chuang
发明人： Jackson H. Ho , Ronald T. Fulks , Tzu-Chin Chuang
IPC分类号： H01L23/52 , H01L21/3205 , H01L23/532 , B32B7/02 , B32B15/01
CPC分类号： H01L23/53223 , H01L2924/0002 , Y10T428/12736 , Y10T428/12743 , Y10T428/2495 , Y10T428/24975 , Y10T428/31678
摘要： The present invention is a novel multilayered structure comprising alternating layers of a base metal and a metal selected from a group of barrier metals. The base metal, in any given layer, is deposited to a thickness less than its critical thickness--a thickness beyond which hillocks are more likely to form for a given temperature. Between each such layer of base metal, a layer of barrier metal is interposed. The intervening layer of barrier metal acts to suppress the formation of hillocks in the base metal.
摘要翻译：本发明是一种新型的多层结构，其包括选自一组阻挡金属的贱金属和金属的交替层。在任何给定层中的母体金属被沉积到小于其临界厚度的厚度 - 在给定温度下更可能形成小丘的厚度。在每个这样的基底金属层之间插入一层阻挡金属。阻挡金属的中间层起到抑制贱金属中的小丘的形成的作用。

8. 发明授权

US5491347A Thin-film structure with dense array of binary control units for presenting images 失效
标题翻译：具有密集阵列二进制控制单元的薄膜结构，用于呈现图像
公开(公告)号：US5491347A
公开(公告)日：1996-02-13
申请号：US235011
申请日：1994-04-28
申请人： Robert R. Allen, deceased , Richard H. Bruce , Tzu-Chin Chuang , Thomas G. Fiske , Ronald T. Fulks , Michael Hack , Jackson H. Ho , Alan G. Lewis , Russel A. Martin , Louis D. Silverstein , Hugo L. Steemers , Susan M. Stuber , Malcolm J. Thompson , William D. Turner , William W. Yao
发明人： Robert R. Allen, deceased , Richard H. Bruce , Tzu-Chin Chuang , Thomas G. Fiske , Ronald T. Fulks , Michael Hack , Jackson H. Ho , Alan G. Lewis , Russel A. Martin , Louis D. Silverstein , Hugo L. Steemers , Susan M. Stuber , Malcolm J. Thompson , William D. Turner , William W. Yao
IPC分类号： G09G3/20 , G09G3/36 , H01L33/00
CPC分类号： G09G3/3688 , G09G3/3648 , G09G3/3677 , G09G2300/0452 , G09G2310/0251 , G09G2320/028
摘要： A thin-film structure on an insulating substrate includes an array of binary control units with an area of at least 90 cm.sup.2 and a density of at least 60 binary control units per cm. One implementation has an area of approximately 510 cm.sup.2, a diagonal of approximately 33 cm, and a total of approximately 6.3 million binary control units. Each binary control unit has a lead for receiving a unit drive signal, to which it responds by causing presentation of a segment of images presented by the array. Each binary control unit can present a segment with either a first color having a maximum intensity or a second color having a minimum intensity. Each binary control unit's unit drive signal causes the binary control unit to present its first and second colors. The substrate can be glass. Each binary control unit can include an amorphous silicon thin-film transistor (TFT) and a storage capacitor. Each binary control unit can be square. The thin-film structure can be used in an active matrix liquid crystal display (AMLCD), monochrome or, with an appropriate filter, color.
摘要翻译：绝缘基板上的薄膜结构包括具有至少90cm 2的面积和至少60个二进制控制单位/ cm的密度的二进制控制单元阵列。一个实施方案具有约510cm2的面积，约33cm的对角线，以及总共约630万个二进制控制单元。每个二进制控制单元具有用于接收单元驱动信号的引线，通过引起阵列呈现的图像段的呈现来对其进行响应。每个二进制控制单元可以呈现具有最大强度的第一颜色或具有最小强度的第二颜色的片段。每个二进制控制单元的单位驱动信号使得二进制控制单元呈现其第一和第二颜色。基底可以是玻璃。每个二进制控制单元可以包括非晶硅薄膜晶体管（TFT）和存储电容器。每个二进制控制单元可以是平方的。薄膜结构可用于有源矩阵液晶显示器（AMLCD），单色或具有适当滤光片的颜色。

9. 发明授权

US4522845A Process for producing a layer of a metal silicide by applying multichromatic radiation 失效
标题翻译：通过施加多层辐射来制造金属硅化物层的方法
公开(公告)号：US4522845A
公开(公告)日：1985-06-11
申请号：US505678
申请日：1983-06-20
申请人： Ronald A. Powell , Ronald T. Fulks
发明人： Ronald A. Powell , Ronald T. Fulks
IPC分类号： C01B33/06 , C23C14/06 , C23C16/42 , H01L21/28 , H01L21/285 , H01L21/324
CPC分类号： H01L21/324 , H01L21/28052 , H01L21/28518 , Y10S148/004 , Y10S148/14
摘要： Multichromatic radiation is applied rapidly to silicon or polysilicon placed in contact with a silicide-forming metal to form metal silicide having low resistivity without deleterious later diffusion of dopants in adjacent single crystal or polysilicon. The radiation is applied to a metal deposited on silicon or to a metal codeposited with or to silicide deposited from a metal-Si composite target. The temperatures preferably rise to between 600.degree. C. and 1200.degree. C. and the total heating periods are less than about one minute, with 10 to 30 seconds being typical.
摘要翻译：将多色辐射快速地施加到与形成硅化物的金属接触的硅或多晶硅，以形成具有低电阻率的金属硅化物，而不会在相邻的单晶或多晶硅中稍后扩散掺杂剂。将辐射施加到沉积在硅上的金属或与由金属-Si复合靶沉积的金属共沉积的金属上。温度优选升高至600℃至1200℃，总加热时间小于约1分钟，典型值为10至30秒。

10. 发明授权

US06201633B1 Micro-electromechanical based bistable color display sheets 有权
标题翻译：基于微机电的双稳态彩色显示板
公开(公告)号：US06201633B1
公开(公告)日：2001-03-13
申请号：US09326876
申请日：1999-06-07
申请人： Eric Peeters , Jackson Ho , Feixia Pan , Raj B. Apte , Joel A. Kubby , Ronald T. Fulks , Decai Sun , Patrick Y. Maeda , David Fork , Robert Thornton , Ross Bringans , G. A. Neville Connell , Philip Don Floyd , Tuan Anh Vo , Koenraad Van Schuylenbergh
发明人： Eric Peeters , Jackson Ho , Feixia Pan , Raj B. Apte , Joel A. Kubby , Ronald T. Fulks , Decai Sun , Patrick Y. Maeda , David Fork , Robert Thornton , Ross Bringans , G. A. Neville Connell , Philip Don Floyd , Tuan Anh Vo , Koenraad Van Schuylenbergh
IPC分类号： G02B2600
CPC分类号： G09G3/3433 , G02B26/02 , G09G3/2011 , G09G3/2018 , G09G3/207 , G09G2300/06 , G09G2310/04 , G09G2310/061 , H04N5/66 , H04N5/7416 , H04N9/30 , H04N9/3102
摘要： A micro-electromechanical bistable shutter display device is provided capable of being implemented for both small screen, high resolution devices and for large billboard-type displays. The micro-electromechanical shutter assembly has bi-stability characteristics which allow the use of only a holding voltage to maintain an image. The micro-electromechanical shutter assembly includes a shutter having petal-like shutter segments covering reflective or transmittive films. To expose the film in a particular shutter assembly, its shutter segments are moved from the horizontal to a vertical position using electrostatic attraction forces to “collapse” the torsionally-hinged shutter segments. The shutter assembly can have a number of segments, as long as the resulting shutter assembly shape can be stacked to form a dense 2D array.
摘要翻译：提供了一种能够实现小屏幕，高分辨率设备和大型广告牌型显示器的微机电双稳态快门显示设备。微机电快门组件具有允许仅使用保持电压来维持图像的双稳定性特性。微机电快门组件包括具有覆盖反射或透射膜的花瓣状快门段的快门。为了在特定的快门组件中曝光胶片，使用静电吸引力使其快门部分从水平位置移动到垂直位置，以使“扭转”的快门片段“折叠”。快门组件可以具有多个段，只要所得到的快门组件形状可以被堆叠以形成致密的2D阵列。

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