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    • 9. 发明授权
    • Apparatus and method for operating an ISFET at multiple drain currents
and gate-source voltages allowing for diagnostics and control of
isopotential points
    • 用于在多个漏极电流和栅源电压下操作ISFET的装置和方法,允许诊断和控制等电位点
    • US5911873A
    • 1999-06-15
    • US850602
    • 1997-05-02
    • Robert Tanner McCarronJames R. Gray
    • Robert Tanner McCarronJames R. Gray
    • G01N27/414G01N27/333
    • G01N27/4148
    • An apparatus for measuring ion concentration of a solution includes an ion sensitive field effect transistor (ISFET), a reference device, an ISFET control circuit, a memory, a measurement circuit and a diagnostic circuit. The ISFET has a drain, a source, an ion sensitive gate region and a plurality of device characteristics. The reference device is separated from the gate region by a sample solution. The ISFET control circuit is coupled to the ISFET and operates the ISFET at a drain-source voltage V.sub.DS and at n successive drain currents I.sub.Di and corresponding gate-source voltages V.sub.GSi, wherein i is an integer from 1 to n and n is an integer greater than 1. The memory stores the plurality of device characteristics and the n successive drain currents I.sub.Di and gate-source voltages V.sub.GSi. The measurement circuit measures ion concentration of the solution as a function of at least one of the n successive drain currents I.sub.Di and gate-source voltages V.sub.GSi and the plurality of device characteristics stored in the memory. The diagnostic circuit measures at least one of the device characteristics of the ISFET as a function of the n successive drain currents I.sub.Di and gate-source voltages V.sub.GSi.
    • 用于测量溶液离子浓度的装置包括离子敏感场效应晶体管(ISFET),参考装置,ISFET控制电路,存储器,测量电路和诊断电路。 ISFET具有漏极,源极,离子敏感栅极区域和多个器件特性。 参考装置通过样品溶液与栅极区域分离。 ISFET控制电路耦合到ISFET并且以漏 - 源电压VDS和n个连续漏电流IDi和对应的栅 - 源电压VGSi操作ISFET,其中i是从1到n的整数,并且n是更大的整数 存储器存储多个器件特性和n个连续漏极电流IDi和栅极 - 源极电压VGSi。 测量电路测量溶液的离子浓度作为n个连续漏极电流IDi和栅极 - 源极电压VGSi以及存储在存储器中的多个器件特性中的至少一个的函数。 诊断电路测量作为n个连续漏极电流IDi和栅极 - 源极电压VGSi的函数的ISFET的器件特性中的至少一个。