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    • 2. 发明授权
    • Post arrays and methods of making the same
    • 发布数组和制作相同的方法
    • US08617799B2
    • 2013-12-31
    • US12563683
    • 2009-09-21
    • Robert KoeferSheng LiuThomas Tombler
    • Robert KoeferSheng LiuThomas Tombler
    • G02B3/00G03F7/20
    • G03F7/40G02B3/0018G03F7/0005
    • In general, in one aspect, the invention features a method that includes forming layer of a mask material on a surface of a first layer, patterning the layer of the mask material to obtain a mask feature, the mask feature having a surface comprising a depression, inducing mass transport of the mask material of the mask feature to obtain a modified mask feature, and transferring a profile of the modified mask feature into the first layer to form a first structure. In general, in another aspect, the invention features a method that includes forming layer of a mask material on a surface of a first layer, patterning the layer of the mask material to obtain a mask feature, inducing mass transport of the mask material of the mask feature to obtain a modified mask feature, and transferring a profile of the modified mask feature into the first layer to form a first structure. The first layer is composed of an amorphous material and the first structure is a post having a base side-wall angle of in a range from about 60 degrees to about 80 degrees.
    • 通常,在一个方面,本发明的特征在于一种方法,其包括在第一层的表面上形成掩模材料层,图案化掩模材料的层以获得掩模特征,掩模特征具有包括凹陷 诱导掩模特征的掩模材料的质量传递以获得修改的掩模特征,以及将修改的掩模特征的轮廓传递到第一层中以形成第一结构。 通常,在另一方面,本发明的特征在于一种方法,其包括在第一层的表面上形成掩模材料层,图案化掩模材料的层以获得掩模特征,引起掩模材料的质量传递 掩模特征以获得修改的掩模特征,以及将修改的掩模特征的轮廓传递到第一层中以形成第一结构。 第一层由无定形材料构成,第一结构是具有约60度至约80度范围内的基底侧壁角度的柱。
    • 3. 发明申请
    • POST ARRAYS AND METHODS OF MAKING THE SAME
    • 后阵列及其制作方法
    • US20100075262A1
    • 2010-03-25
    • US12563683
    • 2009-09-21
    • Robert KoeferSheng LiuThomas Tombler
    • Robert KoeferSheng LiuThomas Tombler
    • G03F7/20
    • G03F7/40G02B3/0018G03F7/0005
    • In general, in one aspect, the invention features a method that includes forming layer of a mask material on a surface of a first layer, patterning the layer of the mask material to obtain a mask feature, the mask feature having a surface comprising a depression, inducing mass transport of the mask material of the mask feature to obtain a modified mask feature, and transferring a profile of the modified mask feature into the first layer to form a first structure. In general, in another aspect, the invention features a method that includes forming layer of a mask material on a surface of a first layer, patterning the layer of the mask material to obtain a mask feature, inducing mass transport of the mask material of the mask feature to obtain a modified mask feature, and transferring a profile of the modified mask feature into the first layer to form a first structure. The first layer is composed of an amorphous material and the first structure is a post having a base side-wall angle of in a range from about 60 degrees to about 80 degrees.
    • 通常,在一个方面,本发明的特征在于一种方法,其包括在第一层的表面上形成掩模材料层,图案化掩模材料的层以获得掩模特征,掩模特征具有包括凹陷 诱导掩模特征的掩模材料的质量传递以获得修改的掩模特征,以及将修改的掩模特征的轮廓传递到第一层中以形成第一结构。 通常,在另一方面,本发明的特征在于一种方法,其包括在第一层的表面上形成掩模材料层,图案化掩模材料的层以获得掩模特征,引起掩模材料的质量传递 掩模特征以获得修改的掩模特征,以及将修改的掩模特征的轮廓传递到第一层中以形成第一结构。 第一层由无定形材料构成,第一结构是具有约60度至约80度范围内的基底侧壁角度的柱。