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1. 发明申请

US20130156293A1 Methods and Systems For Grain Size Evaluation Of Multi-Cystalline Solar Wafers 有权
标题翻译：多晶硅太阳能晶片粒度评估方法与系统
公开(公告)号：US20130156293A1
公开(公告)日：2013-06-20
申请号：US13329914
申请日：2011-12-19
申请人： Gang Shi , Thomas E. Doane , Steven L. Kimbel , Robert H. Fuerhoff
发明人： Gang Shi , Thomas E. Doane , Steven L. Kimbel , Robert H. Fuerhoff
IPC分类号： G06K9/00
CPC分类号： H01L22/12 , G01N21/8806 , G01N21/9501 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for evaluation of wafers are disclosed. One example method includes illuminating a multi-crystalline wafer according to a plurality of lighting parameters, capturing a plurality of images of the multi-crystalline wafer, stacking and projecting the plurality of images to generate a composite image, analyzing the composite image to identify one or more grains of the multi-crystalline wafer, and generating a report based on the analysis of the composite image. The multi-crystalline wafer is illuminated according to a different one of the plurality of lighting parameters in at least two of the plurality of images.
摘要翻译：公开了用于评估晶片的方法和系统。一个示例性方法包括根据多个照明参数照射多晶片，捕获多晶片的多个图像，堆叠和投影多个图像以生成合成图像，分析合成图像以识别一个或多晶粒，并且基于合成图像的分析生成报告。根据多个图像中的至少两个中的多个照明参数中的不同的照明参数照亮多晶片。

2. 发明授权

US5656078A Non-distorting video camera for use with a system for controlling growth of a silicon crystal 失效
标题翻译：与用于控制硅晶体生长的系统一起使用的非扭曲摄像机
公开(公告)号：US5656078A
公开(公告)日：1997-08-12
申请号：US558609
申请日：1995-11-14
申请人： Robert H. Fuerhoff
发明人： Robert H. Fuerhoff
IPC分类号： G01B11/02 , C30B15/00 , C30B15/26 , C30B29/06 , C30B35/00
CPC分类号： C30B29/06 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： System for determining the diameter of a silicon crystal being pulled from a silicon melt for controlling a silicon crystal growing apparatus. The melt has a planar surface including a meniscus that is visible as a bright ring adjacent the crystal. A camera positioned above the melt surface and away from the crystal includes an image plane that is generally parallel to the melt surface and responsive to light from the bright ring for generating an image pattern of a portion of the bright ring. As such, the camera compensates for distortion of the image pattern caused by the position of the camera relative to the crystal. Image processing circuitry detects a characteristic of the image pattern and defines an edge of the bright ring as a function of the detected characteristic. The image processing circuitry further defines a generally circular shape including the defined edge of the bright ring. The diameter of the crystal is then determined based on the diameter of the defined shape for use in controlling the crystal growing apparatus.
摘要翻译：用于确定从用于控制硅晶体生长装置的硅熔体拉出的硅晶体的直径的系统。熔体具有平坦的表面，其包括作为邻近晶体的亮环可见的弯液面。位于熔体表面上方并远离晶体的照相机包括通常平行于熔体表面并响应于来自亮环的光的图像平面，用于产生亮环的一部分的图像图案。因此，照相机补偿由相机相对于晶体的位置引起的图像图案的变形。图像处理电路检测图像图案的特性，并根据检测到的特性定义亮环的边缘。图像处理电路还限定包括亮环的限定边缘的大致圆形形状。然后基于用于控制晶体生长装置的限定形状的直径来确定晶体的直径。

3. 发明授权

US09136185B2 Methods and systems for grain size evaluation of multi-cystalline solar wafers 有权
标题翻译：多晶硅太阳能晶圆粒度评估方法与系统
公开(公告)号：US09136185B2
公开(公告)日：2015-09-15
申请号：US13329914
申请日：2011-12-19
申请人： Gang Shi , Thomas E. Doane , Steven L. Kimbel , Robert H. Fuerhoff
发明人： Gang Shi , Thomas E. Doane , Steven L. Kimbel , Robert H. Fuerhoff
IPC分类号： G06K9/00 , G06K9/40 , G06K9/32 , H01L21/66 , G01N21/95 , G01N21/88
CPC分类号： H01L22/12 , G01N21/8806 , G01N21/9501 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for evaluation of wafers are disclosed. One example method includes illuminating a multi-crystalline wafer according to a plurality of lighting parameters, capturing a plurality of images of the multi-crystalline wafer, stacking and projecting the plurality of images to generate a composite image, analyzing the composite image to identify one or more grains of the multi-crystalline wafer, and generating a report based on the analysis of the composite image. The multi-crystalline wafer is illuminated according to a different one of the plurality of lighting parameters in at least two of the plurality of images.
摘要翻译：公开了用于评估晶片的方法和系统。一个示例性方法包括根据多个照明参数照射多晶片，捕获多晶片的多个图像，堆叠和投影多个图像以生成合成图像，分析合成图像以识别一个或多晶粒，并且基于合成图像的分析生成报告。根据多个图像中的至少两个中的多个照明参数中的不同的照明参数照亮多晶片。

4. 发明授权

US07573587B1 Method and device for continuously measuring silicon island elevation 有权
标题翻译：连续测量硅岛高程的方法和装置
公开(公告)号：US07573587B1
公开(公告)日：2009-08-11
申请号：US12197669
申请日：2008-08-25
申请人： Zheng Lu , Steven L. Kimbel , Robert H. Fuerhoff , Joseph C. Holzer
发明人： Zheng Lu , Steven L. Kimbel , Robert H. Fuerhoff , Joseph C. Holzer
IPC分类号： G01B11/14 , G01B11/22
CPC分类号： G01B11/24 , C30B15/20 , C30B29/06
摘要： A method of continuously measuring an elevation and shape of an unmelted polycrystalline silicon island during a silicon meltdown process. The method comprises projecting a focused bright light on the silicon island to produce a bright dot on the silicon island. The method also includes electronically determining an elevation and a shape of the silicon island by tracking the bright dot during the meltdown process.
摘要翻译：一种在硅熔化过程中连续测量未熔化的多晶硅岛的高度和形状的方法。该方法包括在硅岛上投射聚焦亮光以在硅岛上产生亮点。该方法还包括通过在熔化过程中跟踪亮点来电子地确定硅岛的高程和形状。

5. 发明授权

US06454851B1 Method for preparing molten silicon melt from polycrystalline silicon charge 失效
标题翻译：从多晶硅电荷制备熔融硅熔体的方法
公开(公告)号：US06454851B1
公开(公告)日：2002-09-24
申请号：US09711198
申请日：2000-11-09
申请人： Robert H. Fuerhoff , Mohsen Banan , John D. Holder
发明人： Robert H. Fuerhoff , Mohsen Banan , John D. Holder
IPC分类号： C30B1526
CPC分类号： C30B15/02
摘要： A method and apparatus for preparing molten silicon melt from polycrystalline silicon in a crystal pulling apparatus entails loading an amount of polycrystalline silicon loaded into the crucible less than a predetermined total amount of polycrystalline silicon to be melted. The crucible is heated to form a partially melted charge in the crucible having an island of unmelted polycrystalline silicon exposed above an upper surface of melted silicon. Granular polycrystalline silicon is fed from a feeder onto the island of unmelted polycrystalline silicon until the predetermined total amount of polycrystalline silicon has been loaded into the crucible. The position of the island relative to the crucible side wall is electronically determined as granular polycrystalline silicon is fed onto the island. The feed rate at which granular polycrystalline silicon is fed from the feeder onto the island of unmelted polycrystalline silicon is controlled in response to the determined position of the island relative to the crucible side wall.
摘要翻译：一种在晶体拉制装置中从多晶硅制备熔融硅熔体的方法和装置包括将少量加载到坩埚中的多晶硅负载量小于预定总量的要融化的多晶硅。坩埚被加热以在坩埚中形成部分熔融的电荷，该坩埚具有暴露在熔融硅的上表面之上的未熔化的多晶硅岛。颗粒状多晶硅从进料器进料到未熔化的多晶硅岛上，直到预定总量的多晶硅已经装载到坩埚中。电子地确定岛相对于坩埚侧壁的位置，因为颗粒状多晶硅被馈送到岛上。响应于相对于坩埚侧壁确定的岛的位置，控制粒状多晶硅从进料器供给到未熔化的多晶硅岛上的进料速率。

6. 发明授权

US5653799A Method for controlling growth of a silicon crystal 失效
标题翻译：控制硅晶体生长的方法
公开(公告)号：US5653799A
公开(公告)日：1997-08-05
申请号：US459765
申请日：1995-06-02
申请人： Robert H. Fuerhoff
发明人： Robert H. Fuerhoff
IPC分类号： C30B15/26 , C30B29/06 , G01B11/10 , H01L21/208 , C30B15/20
CPC分类号： G01B11/105 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： System and method for determining the diameter of a silicon crystal being pulled from a silicon melt for controlling a silicon crystal growing apparatus. The melt has a surface with a meniscus which is visible as a bright ring adjacent the crystal. A camera generates an image pattern of a portion of the bright ring adjacent the crystal. Image processing circuitry detects a characteristic of the image pattern and defines an edge of the bright ring as a function of the detected characteristic. The image processing circuitry further defines a generally circular shape including the defined edge of the bright ring. The diameter of the crystal is then determined based on the diameter of the defined shape for use in controlling the crystal growing apparatus.
摘要翻译：用于确定从用于控制硅晶体生长装置的硅熔体拉出的硅晶体的直径的系统和方法。熔体具有弯月面的表面，其可见为与晶体相邻的亮环。相机产生与晶体相邻的亮环的一部分的图像图案。图像处理电路检测图像图案的特性，并根据检测到的特性定义亮环的边缘。图像处理电路还限定包括亮环的限定边缘的大致圆形形状。然后基于用于控制晶体生长装置的限定形状的直径来确定晶体的直径。

7. 发明授权

US06776840B1 Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process 有权
标题翻译：在锁定的种子提升生长过程中控制硅晶体的直径的方法和装置
公开(公告)号：US06776840B1
公开(公告)日：2004-08-17
申请号：US09502340
申请日：2000-02-10
申请人： Robert H. Fuerhoff , Steven L. Kimbel
发明人： Robert H. Fuerhoff , Steven L. Kimbel
IPC分类号： C03B1520
CPC分类号： C30B15/22 , C30B15/20
摘要： A method and apparatus for controlling the diameter of a monocrystalline ingot as it is being pulled from a melt by changing the temperature of the melt. The ingot is pulled from the melt at a target rate that substantially follows a predetermined velocity profile. A temperature model represents variations in the melt temperature in response to variations in power supplied to a heater for heating the melt. In generating a temperature set point representing a target melt temperature, an error between a target diameter and a measured diameter of the ingot is determined and proportional-integral-derivative (PID) control is performed on the error signal. The PID control generates the temperature set point as a function of the error signal. In turn, the temperature model determines a power set point for the power supplied to the heater as a function of the temperature set point generated by the PID control and the power supplied to the heater is adjusted according to the power set point.
摘要翻译：用于通过改变熔体的温度从熔体中拉出单晶锭的直径来控制直径的方法和装置。以基本上遵循预定速度分布的目标速率从熔体中拉出铸块。温度模型表示响应于供应到用于加热熔体的加热器的功率的变化而导致的熔体温度的变化。在产生表示目标熔融温度的温度设定点时，确定锭的目标直径和测量直径之间的误差，并对误差信号执行比例 - 积分微分（PID）控制。 PID控制产生温度设定点作为误差信号的函数。反过来，温度模型根据由PID控制产生的温度设定点确定供给加热器的功率的功率设定点，并且根据功率设定点调节供应给加热器的功率。

8. 发明授权

US06171391B2 Method and system for controlling growth of a silicon crystal 有权
标题翻译：控制硅晶体生长的方法和系统
公开(公告)号：US06171391B2
公开(公告)日：2001-01-09
申请号：US09172546
申请日：1998-10-14
申请人： Robert H. Fuerhoff , Mohsen Banan
发明人： Robert H. Fuerhoff , Mohsen Banan
IPC分类号： C30B1526
CPC分类号： C30B29/06 , C30B15/26 , Y10T117/1004 , Y10T117/1008 , Y10T117/1068
摘要： A method and system for determining melt level and reflector position in a Czochralski single crystal growing apparatus. The crystal growing apparatus has a heated crucible containing a silicon melt from which the crystal is pulled. The crystal growing apparatus also has a reflector positioned within the crucible with a central opening through which the crystal is pulled. A camera generates images of a portion of the reflector and a portion of a reflection of the reflector visible on the top surface of the melt. An image processor processes the images as a function of their pixel values to detect an edge of the reflector and an edge of the reflection in the images. A control circuit determines a distance from the camera to the reflector and a distance from the camera to the reflection based on the relative positions of the detected edges in the images. The control circuit determines at least one parameter representative of a condition of the crystal growing apparatus based on the determined distances and controls the apparatus in response to the determined parameter.
摘要翻译：一种用于确定切克劳斯基单晶生长装置中的熔体水平和反射器位置的方法和系统。晶体生长装置具有含有熔融晶体的硅熔体的加热坩埚。晶体生长装置还具有位于坩埚内的反射器，其具有中心开口，晶体被拉出。相机产生反射器的一部分的图像，并且反射器的反射的一部分在熔体的顶表面上可见。图像处理器根据其像素值处理图像以检测反射器的边缘和图像中的反射的边缘。控制电路基于图像中检测到的边缘的相对位置来确定从相机到反射器的距离以及从相机到反射的距离。控制电路基于所确定的距离来确定表示晶体生长装置的状况的至少一个参数，并根据所确定的参数来控制装置。

9. 发明授权

US5882402A Method for controlling growth of a silicon crystal 失效
标题翻译：控制硅晶体生长的方法
公开(公告)号：US5882402A
公开(公告)日：1999-03-16
申请号：US939802
申请日：1997-09-30
申请人： Robert H. Fuerhoff
发明人： Robert H. Fuerhoff
IPC分类号： G01B11/10 , C30B15/26 , C30B1/00
CPC分类号： C30B15/26 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032
摘要： A method and system for determining a diameter of a silicon single crystal being pulled from a silicon melt contained in a heated crucible. The melt has a surface with a meniscus visible as a bright area adjacent the pulled crystal. A camera generates an image of the interior of the crucible including a portion of the bright area adjacent the crystal. Image processing circuitry defines a central window region of the image having an elliptical shape at a position corresponding to an approximate center of the crystal and processes the image as a function of its pixel values to detect edges within the central window region. The image processing circuitry further groups the detected edges to define an object in the image corresponding to the crystal, determines a dimension of the defined object and determines an approximate diameter of the crystal as a function of the determined dimension of the defined object.
摘要翻译：一种用于确定从包含在加热的坩埚中的硅熔体中拉出的硅单晶的直径的方法和系统。熔体具有弯月面的表面，作为与拉晶体相邻的明亮区域可见。相机产生坩埚内部的图像，其包括与晶体相邻的明亮区域的一部分。图像处理电路在对应于晶体的大致中心的位置处定义具有椭圆形状的图像的中心窗口区域，并根据其像素值处理图像以检测中心窗口区域内的边缘。图像处理电路还对检测到的边缘进行分组，以定义对应于晶体的图像中的对象，确定所定义对象的尺寸，并根据所确定的对象的尺寸确定晶体的大致直径。

10. 发明授权

US5665159A System for controlling growth of a silicon crystal 失效
标题翻译：控制硅晶体生长的系统
公开(公告)号：US5665159A
公开(公告)日：1997-09-09
申请号：US620137
申请日：1996-03-21
申请人： Robert H. Fuerhoff
发明人： Robert H. Fuerhoff
IPC分类号： C30B15/26 , C30B29/06 , G01B11/10 , H01L21/208 , C30B35/00
CPC分类号： G01B11/105 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： System and method for determining the diameter of a silicon crystal being pulled from a silicon melt for controlling a silicon crystal growing apparatus. The melt has a surface with a meniscus which is visible as a bright ring adjacent the crystal. A camera generates an image pattern of a portion of the bright ring adjacent the crystal. Image processing circuitry detects a characteristic of the image pattern and defines an edge of the bright ring as a function of the detected characteristic. The image processing circuitry further defines a generally circular shape including the defined edge of the bright ring. The diameter of the crystal is then determined based on the diameter of the defined shape for use in controlling the crystal growing apparatus.
摘要翻译：用于确定从用于控制硅晶体生长装置的硅熔体拉出的硅晶体的直径的系统和方法。熔体具有弯月面的表面，其可见为与晶体相邻的亮环。相机产生与晶体相邻的亮环的一部分的图像图案。图像处理电路检测图像图案的特性，并根据检测到的特性定义亮环的边缘。图像处理电路还限定包括亮环的限定边缘的大致圆形形状。然后基于用于控制晶体生长装置的限定形状的直径来确定晶体的直径。

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