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1. 发明授权

US06586814B1 Etch resistant shallow trench isolation in a semiconductor wafer 失效
标题翻译：在半导体晶片中进行耐腐蚀浅沟槽隔离
公开(公告)号：US06586814B1
公开(公告)日：2003-07-01
申请号：US09735084
申请日：2000-12-11
申请人： Rajiv Patel , David Chan , Arvind Kamath , Ken Rafftesaeth , Venkatesh P. Gopinath
发明人： Rajiv Patel , David Chan , Arvind Kamath , Ken Rafftesaeth , Venkatesh P. Gopinath
IPC分类号： H01L2900
CPC分类号： H01L21/76224
摘要： A shallow isolating trench is formed in a semiconductor wafer between active component areas to electrically isolate the active components from each other. The isolating trench is primarily formed of an insulating material, such as an oxide, in a recess formed into the wafer. An etch resistant material, such as BTBAS nitride, is placed over the insulating material in the recess. The etch resistant material protects the insulating material from erosion due to subsequent semiconductor fabrication process steps, so the integrity of the isolating trench and the planarity of the wafer are generally maintained.
摘要翻译：在活性组分区域之间的半导体晶片中形成浅隔离沟槽，以将活性组分彼此电隔离。隔离沟槽主要由形成在晶片中的凹部中的绝缘材料（例如氧化物）形成。诸如BTBAS氮化物的耐蚀刻材料放置在凹槽中的绝缘材料上。耐蚀刻材料保护绝缘材料免受由于随后的半导体制造工艺步骤的侵蚀，因此通常保持隔离沟槽的完整性和晶片的平面性。

2. 发明授权

US06335295B1 Flame-free wet oxidation 有权
标题翻译：无火焰湿氧化
公开(公告)号：US06335295B1
公开(公告)日：2002-01-01
申请号：US09231265
申请日：1999-01-15
申请人： Rajiv Patel
发明人： Rajiv Patel
IPC分类号： H01L2102
CPC分类号： H01L21/02238 , C01B5/00 , C23C8/16 , H01L21/02255 , H01L21/31662
摘要： Water for use in wet oxidation of semiconductor surfaces may be generated by reacting ultra pure hydrogen and ultra pure gaseous oxygen without a flame. Because no flame is used, contamination due to a flame impinging on components of a “torch” is not a problem. Flame-free generation of water is accomplished by reacting hydrogen and oxygen under conditions that do not result in ignition. This may be accomplished by provided a diluted hydrogen stream in which molecular hydrogen is mixed with a diluent such as a noble gas or nitrogen. This use of diluted hydrogen also reduces or eliminates the danger of explosion. This can simplify the apparatus design by eliminating the need for complicated interlocks, flame detectors, etc.
摘要翻译：用于半导体表面湿氧化的水可以通过使超纯氢和超纯气态氧反应而不产生火焰而产生。因为没有使用火焰，所以由于火焰撞击在“火炬”的部件上的污染不成问题。无火焰产生的水是通过在不导致点火的条件下使氢和氧反应来实现的。这可以通过提供其中分子氢与稀释剂如惰性气体或氮气混合的稀释氢气流来实现。稀释氢的使用也可以减少或消除爆炸的危险。这可以通过消除对复杂互锁，火焰探测器等的需要来简化设备设计。

3. 发明授权

US08804739B2 Processing packets by a network device 有权
标题翻译：通过网络设备处理数据包
公开(公告)号：US08804739B2
公开(公告)日：2014-08-12
申请号：US13460697
申请日：2012-04-30
申请人： Dennis C. Ferguson , Rajiv Patel , Gerald Cheung , Pradeep S. Sindhu
发明人： Dennis C. Ferguson , Rajiv Patel , Gerald Cheung , Pradeep S. Sindhu
IPC分类号： H04L12/28 , H04L12/56 , H04L29/06
CPC分类号： H04L45/745 , H04L29/06095 , H04L29/0653 , H04L45/74 , H04L47/10 , H04L49/3009 , H04L49/309 , H04L69/22
摘要： A method and apparatus for performing a lookup in a switching device of a packet switched network where the lookup includes a plurality of distinct operations each of which returns a result that includes a pointer to a next operation in a sequence of operations for the lookup. The method includes determining a first lookup operation to be executed, executing the first lookup operation including returning a result and determining if the result includes a pointer to another lookup operation in the sequence of operations. If the result includes a pointer to another lookup operation, the lookup operation indicated by the result is executed. Else, the lookup is terminated.
摘要翻译：一种用于在分组交换网络的交换设备中执行查找的方法和装置，其中所述查找包括多个不同的操作，每个操作返回包括用于所述查找的操作序列中的下一个操作的指针的结果。该方法包括确定要执行的第一查找操作，执行第一查找操作，包括返回结果并确定结果是否包含指向操作序列中的另一查找操作的指针。如果结果包含指向另一个查找操作的指针，则执行结果指示的查找操作。否则，查找终止。

4. 发明授权

US07986629B1 Filtering and route lookup in a switching device 失效
标题翻译：在交换设备中过滤和路由查找
公开(公告)号：US07986629B1
公开(公告)日：2011-07-26
申请号：US12697101
申请日：2010-01-29
申请人： Dennis C. Ferguson , Rajiv Patel , Gerald Cheung , Pradeep Sindhu
发明人： Dennis C. Ferguson , Rajiv Patel , Gerald Cheung , Pradeep Sindhu
IPC分类号： H04L12/26
CPC分类号： H04L67/1002 , H04L43/022 , H04L43/028 , H04L43/50 , H04L45/00 , H04L45/60 , H04L45/745 , H04L45/7457 , H04L47/10 , H04L47/125 , H04L47/20 , H04L47/2441 , H04L47/32 , H04L49/205 , H04L49/25 , H04L49/3009 , H04L49/3036 , H04L49/3072 , H04L63/0227 , H04L69/22
摘要： Methods and devices for processing packets are provided. The processing device may Include an input interface for receiving data units containing header information of respective packets; a first module configurable to perform packet filtering based on the received data units; a second module configurable to perform traffic analysis based on the received data units; a third module configurable to perform load balancing based on the received data units; and a fourth module configurable to perform route lookups based on the received data units.
摘要翻译：提供了处理数据包的方法和设备。处理装置可以包括用于接收包含相应分组的报头信息的数据单元的输入接口; 第一模块，可配置为基于所接收的数据单元执行分组过滤; 第二模块，可配置为基于所接收的数据单元执行流量分析; 第三模块，可配置为基于所接收的数据单元执行负载平衡; 以及第四模块，其可配置为基于所接收的数据单元执行路线查找。

5. 发明授权

US07688727B1 Filtering and route lookup in a switching device 有权
标题翻译：在交换设备中过滤和路由查找
公开(公告)号：US07688727B1
公开(公告)日：2010-03-30
申请号：US11614583
申请日：2006-12-21
申请人： Dennis C. Ferguson , Rajiv Patel , Gerald Cheung , Pradeep Sindhu
发明人： Dennis C. Ferguson , Rajiv Patel , Gerald Cheung , Pradeep Sindhu
IPC分类号： H04L12/26
CPC分类号： H04L67/1002 , H04L43/022 , H04L43/028 , H04L43/50 , H04L45/00 , H04L45/60 , H04L45/745 , H04L45/7457 , H04L47/10 , H04L47/125 , H04L47/20 , H04L47/2441 , H04L47/32 , H04L49/205 , H04L49/25 , H04L49/3009 , H04L49/3036 , H04L49/3072 , H04L63/0227 , H04L69/22
摘要： Methods and devices for processing packets are provided. The processing device may Include an input interface for receiving data units containing header information of respective packets; a first module configurable to perform packet filtering based on the received data units; a second module configurable to perform traffic analysis based on the received data units; a third module configurable to perform load balancing based on the received data units; and a fourth module configurable to perform route lookups based on the received data units.
摘要翻译：提供了处理数据包的方法和设备。处理装置可以包括用于接收包含相应分组的报头信息的数据单元的输入接口; 第一模块，可配置为基于所接收的数据单元执行分组过滤; 第二模块，可配置为基于所接收的数据单元执行流量分析; 第三模块，可配置为基于所接收的数据单元执行负载平衡; 以及第四模块，其可配置为基于所接收的数据单元执行路线查找。

6. 发明授权

US07230912B1 Sampling to a next hop 有权
公开(公告)号：US07230912B1
公开(公告)日：2007-06-12
申请号：US09881110
申请日：2001-06-14
申请人： Kaushik Ghosh , Dennis Ferguson , Rajiv Patel , Scott Mackie
发明人： Kaushik Ghosh , Dennis Ferguson , Rajiv Patel , Scott Mackie
IPC分类号： G06F11/00 , H04L12/26
CPC分类号： H04L45/00 , H04L43/026 , H04L45/28 , H04L45/60 , Y02D50/30
摘要： Samples from an addressed data forwarding devices, such as a router, are forwarded to a specified next hop address and/or out a specified next hop interface. However, the sampling and/or next hop forwarding is suppressed if the specified next hop address is unstable or unresolved.

7. 发明授权

US06798777B1 Filtering and route lookup in a switching device 有权
标题翻译：在交换设备中过滤和路由查找
公开(公告)号：US06798777B1
公开(公告)日：2004-09-28
申请号：US09550413
申请日：2000-04-17
申请人： Dennis C. Ferguson , Rajiv Patel , Gerald Cheung , Pradeep S. Sindhu
发明人： Dennis C. Ferguson , Rajiv Patel , Gerald Cheung , Pradeep S. Sindhu
IPC分类号： G06F1200
CPC分类号： H04L45/745 , H04L29/06095 , H04L29/0653 , H04L45/74 , H04L47/10 , H04L49/3009 , H04L49/309 , H04L69/22
摘要： A method and apparatus for performing a lookup in a switching device of a packet switched network where the lookup includes a plurality of distinct operations each of which returns a result that includes a pointer to a next operation in a sequence of operations for the lookup. The method includes determining a first lookup operation to be executed, executing the first lookup operation including returning a result and determining if the result includes a pointer to another lookup operation in the sequence of operations. If the result includes a pointer to another lookup operation, the lookup operation indicated by the result is executed. Else, the lookup is terminated.
摘要翻译：一种用于在分组交换网络的交换设备中执行查找的方法和装置，其中所述查找包括多个不同的操作，每个操作返回包括用于所述查找的操作序列中的下一个操作的指针的结果。该方法包括确定要执行的第一查找操作，执行第一查找操作，包括返回结果并确定结果是否包含指向操作序列中的另一查找操作的指针。如果结果包含指向另一个查找操作的指针，则执行结果指示的查找操作。否则，查找终止。

8. 发明授权

US06656805B2 METHOD OF REDUCING SILICON OXYNITRIDE GATE INSULATOR THICKNESS IN SOME TRANSISTORS OF A HYBRID INTEGRATED CIRCUIT TO OBTAIN INCREASED DIFFERENTIAL IN GATE INSULATOR THICKNESS WITH OTHER TRANSISTORS OF THE HYBRID CIRCUIT 失效
公开(公告)号：US06656805B2
公开(公告)日：2003-12-02
申请号：US10304631
申请日：2002-11-26
申请人： Arvind Kamath , Rajiv Patel , Ravindra M. Kapre
发明人： Arvind Kamath , Rajiv Patel , Ravindra M. Kapre
IPC分类号： H01L21336
CPC分类号： H01L21/823462
摘要： A relatively thin gate insulator of a digital switching transistor is formed from a layer of silicon oxynitride which was initially formed by implanting nitrogen atoms in a silicon substrate and oxidizing the nitrogen and silicon. It has been discovered that an outer layer of silicon dioxide is formed as a part of the silicon oxynitride layer. Removing this outer layer of silicon dioxide from the silicon oxynitride layer leaves a thin remaining layer of substantially-only silicon oxynitride as the gate insulator. Thinner gate insulators of approximately 15-21 angstroms, for example, can be formed from a grown thickness of 60 angstroms, for example. Gate insulators for digital and analog transistors may be formed simultaneously with a greater differential in thickness been possible by using conventional nitrogen implantation techniques.

9. 发明授权

US06562729B2 Silicon nitride and silicon dioxide gate insulator transistors and method of forming same in a hybrid integrated circuit 有权
公开(公告)号：US06562729B2
公开(公告)日：2003-05-13
申请号：US10171700
申请日：2002-06-14
申请人： Arvind Kamath , Rajiv Patel , Mohammad Mirabedini
发明人： Arvind Kamath , Rajiv Patel , Mohammad Mirabedini
IPC分类号： H01L2131
CPC分类号： H01L21/823462
摘要： Silicon nitride gate insulators for digital transistors and silicon dioxide gate insulators for analog transistors of a hybrid integrated circuit (IC) are formed in a single integrated fabrication process. A first area of a silicon substrate of the IC is exposed while a second area is initially covered by a silicon dioxide layer. A layer of silicon nitride is formed on the exposed first area while the initial silicon dioxide layer inhibits the formation of silicon nitride on the second area. Thereafter the initial silicon dioxide layer is removed from the second area to allow a new silicon dioxide layer to be formed there from the exposed silicon substrate. The silicon dioxide layer shields against the adverse influences from silicon nitride formation and permits the initial silicon dioxide layer to be removed by etching. The silicon nitride layer shields against the adverse influences of oxidizing new silicon dioxide layer. A slight, beneficial silicon dioxide interface is created between the silicon nitride and the silicon substrate as a result of oxidizing the new layer of silicon dioxide.

10. 发明授权

US06436845B1 Silicon nitride and silicon dioxide gate insulator transistors and method of forming same in a hybrid integrated circuit 有权
公开(公告)号：US06436845B1
公开(公告)日：2002-08-20
申请号：US09723516
申请日：2000-11-28
申请人： Arvind Kamath , Rajiv Patel , Mohammad Mirabedini
发明人： Arvind Kamath , Rajiv Patel , Mohammad Mirabedini
IPC分类号： H01L2131
CPC分类号： H01L21/823462
摘要： Silicon nitride gate insulators for digital transistors and silicon dioxide gate insulators for analog transistors of a hybrid integrated circuit (IC) are formed in a single integrated fabrication process. A first area of a silicon substrate of the IC is exposed while a second area is initially covered by a silicon dioxide layer. A layer of silicon nitride is formed on the exposed first area while the initial silicon dioxide layer inhibits the formation of silicon nitride on the second area. Thereafter the initial silicon dioxide layer is removed from the second area to allow a new silicon dioxide layer to be formed there from the exposed silicon substrate. The silicon dioxide layer shields against the adverse influences from silicon nitride formation and permits the initial silicon dioxide layer to be removed by etching. The silicon nitride layer shields against the adverse influences of oxidizing new silicon dioxide layer. A slight, beneficial silicon dioxide interface is created between the silicon nitride and the silicon substrate as a result of oxidizing the new layer of silicon dioxide.

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