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    • 2. 发明授权
    • Method for the fabrication of isolation structures
    • 隔离结构的制造方法
    • US07214596B2
    • 2007-05-08
    • US10909749
    • 2004-08-02
    • Francesco CiovaccoRoberto Colombo
    • Francesco CiovaccoRoberto Colombo
    • H01L21/76H01L21/336H01L21/4763
    • H01L21/3065H01L21/3081
    • A method for manufacturing insulating structures in a semiconductor substrate includes forming a first insulating layer on the semiconductor substrate, forming a stop layer on the first insulating layer, and forming a barrier layer on the stop layer. The barrier layer is selective with respect to the stop layer. A screen layer is formed on the barrier layer. A portion of the screen layer is selectively removed for forming an opening therethrough for exposing a portion of the barrier layer. The exposed barrier layer is removed for exposing a portion of the stop layer. The exposed stop layer is removed for exposing a portion of the semiconductor substrate. The method further includes removing the remaining barrier layer, and removing a portion of the exposed semiconductor substrate for forming a trench therein.
    • 在半导体衬底中制造绝缘结构的方法包括在半导体衬底上形成第一绝缘层,在第一绝缘层上形成阻挡层,并在阻挡层上形成阻挡层。 阻挡层相对于停止层是选择性的。 屏障层形成在阻挡层上。 选择性地去除屏幕层的一部分以形成穿过其中的开口以暴露阻挡层的一部分。 去除曝光的阻挡层以暴露停止层的一部分。 去除暴露的停止层以暴露半导体衬底的一部分。 该方法还包括去除剩余的阻挡层,以及去除暴露的半导体衬底的一部分以在其中形成沟槽。
    • 5. 发明授权
    • Laundry treatment machine
    • 洗衣机
    • US08661858B2
    • 2014-03-04
    • US12672547
    • 2008-08-14
    • Alberto SantarossaRoberto ColomboAngelo IrreraMaurizio Biasi
    • Alberto SantarossaRoberto ColomboAngelo IrreraMaurizio Biasi
    • D06F58/10
    • D06F58/10D06F39/008D06F58/203
    • A home laundry machine (1) having an outer casing (2) and, inside said casing (2), a laundry container (3, 5) for housing the laundry to be dried, and a steam generator (15) for feeding a given amount of steam into the laundry container (3, 5), and which in turn has a tubular vaporizer (16) containing a given amount of water; a heater (19) for boiling and converting the water in said tubular vaporizer (16) into steam; and a steam exhaust pipe (20) for feeding the steam produced in the tubular vaporizer (16) into the laundry container (3, 5), and which has at least one tubular portion (20a) contacting the heater (19), so that the steam flowing along the tubular portion (20a) receives a certain amount of heat from said heater (19).
    • 一种家用洗衣机(1),其具有外壳(2),并且在所述壳体(2)的内部具有用于容纳要干燥的衣物的衣物容器(3,5)和用于供给给定的衣物的蒸汽发生器(15) 进入洗衣容器(3,5)的蒸汽量,其又具有含有给定量的水的管式蒸发器(16); 用于将所述管式蒸发器(16)中的水沸腾并转化成蒸汽的加热器(19) 以及用于将在管状蒸发器(16)中产生的蒸汽供给到衣物容器(3,5)中并且具有与加热器(19)接触的至少一个管状部分(20a))的蒸汽排气管(20),使得 沿着管状部分(20a)流动的蒸汽从所述加热器(19)接收一定量的热量。
    • 7. 发明申请
    • LAUNDRY TREATMENT MACHINE
    • 洗衣机
    • US20110030427A1
    • 2011-02-10
    • US12672547
    • 2008-08-14
    • Alberto SantarossaRoberto ColomboAngelo IrreraMaurizio Biasi
    • Alberto SantarossaRoberto ColomboAngelo IrreraMaurizio Biasi
    • D06F37/00
    • D06F58/10D06F39/008D06F58/203
    • A home laundry machine (1) having an outer casing (2) and, inside said casing (2), a laundry container (3, 5) for housing the laundry to be dried, and a steam generator (15) for feeding a given amount of steam into the laundry container (3, 5), and which in turn has a tubular vaporizer (16) containing a given amount of water; a heater (19) for boiling and converting the water in said tubular vaporizer (16) into steam; and a steam exhaust pipe (20) for feeding the steam produced in the tubular vaporizer (16) into the laundry container (3, 5), and which has at least one tubular portion (20a) contacting the heater (19), so that the steam flowing along the tubular portion (20a) receives a certain amount of heat from said heater (19).
    • 一种家用洗衣机(1),其具有外壳(2),并且在所述壳体(2)的内部具有用于容纳要干燥的衣物的衣物容器(3,5)和用于供给给定的衣物的蒸汽发生器(15) 进入洗衣容器(3,5)的蒸汽量,其又具有含有给定量的水的管式蒸发器(16); 用于将所述管式蒸发器(16)中的水沸腾并转化成蒸汽的加热器(19) 以及用于将在管状蒸发器(16)中产生的蒸汽供给到衣物容器(3,5)中并且具有与加热器(19)接触的至少一个管状部分(20a))的蒸汽排气管(20),使得 沿着管状部分(20a)流动的蒸汽从所述加热器(19)接收一定量的热量。
    • 9. 发明申请
    • Process for digging a deep trench in a semiconductor body and semiconductor body so obtained
    • 用于挖掘如此获得的半导体本体和半导体主体中的深沟槽的工艺
    • US20070190743A1
    • 2007-08-16
    • US11648838
    • 2006-12-28
    • Roberto Colombo
    • Roberto Colombo
    • H01L21/76
    • H01L21/30655H01L21/76281H01L21/76283
    • A process for digging deep trenches in a body of semiconductor material includes forming a mask having an opening, above a surface of a semiconductor body. A passivating layer is conformally formed on the mask and on the semiconductor body within the opening. A directional etch is extended to first remove the passivating layer from on top of the semiconductor body and then etch the semiconductor body through the opening. Forming the passivating layer and executing the directional etch are carried out repeatedly in sequence so as to form a trench through the opening. A tapered portion of the trench is formed, which has a transverse dimension decreasing as a distance from the surface of the semiconductor body increases.
    • 用于挖掘半导体材料体中的深沟槽的方法包括在半导体本体的表面上形成具有开口的掩模。 钝化层在掩模和开口内的半导体本体上共形地形成。 扩展定向蚀刻以首先从半导体主体的顶部去除钝化层,然后通过开口蚀刻半导体本体。 顺序地重复执行形成钝化层并执行定向蚀刻,以形成通过该开口的沟槽。 形成沟槽的锥形部分,其横截面尺寸随半导体本体表面的距离增加而减小。