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    • 2. 发明申请
    • RETUNING OF FERROELECTRIC MEDIA BUILT-IN-BIAS
    • 电磁介质中的偏转
    • US20100085863A1
    • 2010-04-08
    • US12260045
    • 2008-10-28
    • Nathan FranklinQuan A. TranQing Ma
    • Nathan FranklinQuan A. TranQing Ma
    • G11B9/00
    • G11B9/02
    • Provided herein are embodiments for adjusting a built-in bias of a media including a conductive layer and a ferroelectric layer above the conductive layer. In certain embodiments, a voltage signal is applied between the conductive layer of the media and an electrode (provided over at least a portion of the ferroelectric layer) to thereby tune the built-in bias so that the built-in bias moves in a direction of (i.e., towards) the desired built-in bias. In other embodiments, the temperature of the at least a portion of the ferroelectric layer of the media is elevated to thereby tune the built-in bias so that the built-in bias moves in a direction of (i.e., towards) the desired built-in bias. The desired built-in bias can be a zero built-in bias, or a non-zero built-in bias.
    • 本文提供了用于调整介质的内置偏压的实施例,该介质包括在导电层上方的导电层和铁电层。 在某些实施例中,电压信号被施加在介质的导电层和电极(设置在铁电层的至少一部分之间),从而调节内置偏置,使得内置偏压沿着方向 (即,朝向)所需的内在偏见。 在其他实施例中,介质的铁电层的至少一部分的温度升高,从而调节内置偏压,使得内置偏压沿着(即,朝向)所需内置的方向移动, 偏见。 所需的内置偏置可以是零内置偏置或非零内置偏置。
    • 5. 发明申请
    • METHOD OF IMPROVING STABILITY OF DOMAIN POLARIZATION IN FERROELECTRIC THIN FILMS
    • 改善电磁薄膜中极域极化稳定性的方法
    • US20090213492A1
    • 2009-08-27
    • US12035989
    • 2008-02-22
    • Quan A. Tran
    • Quan A. Tran
    • G11B5/127
    • G11B9/02B82Y10/00G11B9/1409
    • A memory device comprises a ferroelectric media comprising at least one ferroelectric film. The ferroelectric film has an as-grown spontaneous polarization of a first direction. A tip is position over the ferroelectric film and a first voltage is applied to the tip larger than a switching voltage of the ferroelectric film. One or both of the tip and the ferroelectric media is moved to form a first domain having a spontaneous polarization of opposite the first direction. The tip is then positioned over the first domain and a second voltage to the tip smaller than the first voltage to form a second domain smaller than the first domain and having a polarization of the first direction, the second domain defining the bit.
    • 存储器件包括包含至少一个铁电膜的铁电介质。 铁电薄膜具有第一方向的自发极化。 尖端位于铁电体膜上方,并且第一电压施加到比铁电体膜的开关电压大的尖端。 移动尖端和铁电介质中的一个或两个以形成具有与第一方向相反的自发极化的第一区域。 然后将尖端定位在第一区域上方,并且尖端的第二电压小于第一电压,以形成小于第一区域的第二区域,并具有第一方向的极化,第二区域限定位。