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1. 发明授权

US09000464B2 Semiconductor structure for substrate separation and method for manufacturing the same 有权
标题翻译：用于基板分离的半导体结构及其制造方法
公开(公告)号：US09000464B2
公开(公告)日：2015-04-07
申请号：US13409486
申请日：2012-03-01
申请人： Chun-Yen Chang , Po-Min Tu , Jet-Rung Chang
发明人： Chun-Yen Chang , Po-Min Tu , Jet-Rung Chang
IPC分类号： H01L33/60 , H01L29/06 , H01L33/00 , H01L33/32 , H01L33/08
CPC分类号： H01L33/0079 , H01L29/06 , H01L33/08 , H01L33/32 , H01L33/60
摘要： A semiconductor structure includes a temporary substrate; a first semiconductor layer positioned on the temporary substrate; a dielectric layer comprising a plurality of patterned nano-scaled protrusions disposed on the first semiconductor layer; a dielectric layer surrounding the plurality of patterned nano-scaled protrusions and disposed on the first semiconductor layer; and a second semiconductor layer positioned on the dielectric layer, wherein the top surfaces of the patterned nano-scaled protrusions are in contact with the bottom of the second semiconductor layer. An etching process is performed on the semiconductor structure to separate the first semiconductor layer and the second semiconductor layer, in order to detach the temporary substrate from the second semiconductor layer and transfer the second semiconductor layer to a permanent substrate.
摘要翻译：半导体结构包括临时衬底; 位于临时衬底上的第一半导体层; 介电层，包括设置在所述第一半导体层上的多个图案化纳米级突起; 围绕所述多个图案化纳米尺度突起且设置在所述第一半导体层上的介电层; 以及位于所述介电层上的第二半导体层，其中所述图案化纳米级突起的顶表面与所述第二半导体层的底部接触。对半导体结构进行蚀刻处理以分离第一半导体层和第二半导体层，以便将临时衬底从第二半导体层分离并将第二半导体层转移到永久衬底。

2. 发明授权

US08866161B2 Light-emitting semiconductor device having sub-structures for reducing defects of dislocation therein 有权
标题翻译：具有用于减少其位错缺陷的子结构的发光半导体器件
公开(公告)号：US08866161B2
公开(公告)日：2014-10-21
申请号：US13314186
申请日：2011-12-08
申请人： Shih-Cheng Huang , Po-Min Tu , Ying-Chao Yeh , Wen-Yu Lin , Peng-Yi Wu , Shih-Hsiung Chan
发明人： Shih-Cheng Huang , Po-Min Tu , Ying-Chao Yeh , Wen-Yu Lin , Peng-Yi Wu , Shih-Hsiung Chan
IPC分类号： H01L29/06 , H01L27/15 , H01L21/02 , H01L33/00 , H01S5/323
CPC分类号： H01L21/0254 , H01L21/02458 , H01L21/02505 , H01L21/02656 , H01L33/007 , H01S5/32341 , H01S2301/173 , H01S2304/12
摘要： A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.
摘要翻译：半导体器件的结构包括第一半导体层; 在所述第一半导体层的表面上的中间层; 在所述中间层上的第二半导体层，其中所述中间层和所述第二半导体层被集成到一组子结构中; 以及在所述第二半导体层上的半导体发光器件。

3. 发明授权

US08754438B2 Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US08754438B2
公开(公告)日：2014-06-17
申请号：US13400097
申请日：2012-02-19
申请人： Ya-Wen Lin , Shih-Cheng Huang , Po-Min Tu , Chia-Hung Huang , Shun-Kuei Yang
发明人： Ya-Wen Lin , Shih-Cheng Huang , Po-Min Tu , Chia-Hung Huang , Shun-Kuei Yang
IPC分类号： H01L33/62
CPC分类号： H01L33/20 , H01L33/0075 , H01L33/145 , H01L33/38 , H01L33/382
摘要： An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.
摘要翻译： LED包括衬底，缓冲层，外延层和导电层。外延层包括第一N型外延层，第二N型外延层和夹在第一和第二N型外延层之间的图案化沟槽的阻挡层。第一和第二N型外延层经由图案化的沟槽彼此接触。因此，LED具有均匀的电流分布和更大的发光面积。还提供了一种用于LED的制造方法。

4. 发明授权

US08604503B2 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08604503B2
公开(公告)日：2013-12-10
申请号：US13600137
申请日：2012-08-30
申请人： Chia-Hung Huang , Shih-Cheng Huang , Po-Min Tu , Ya-Wen Lin , Shun-Kuei Yang
发明人： Chia-Hung Huang , Shih-Cheng Huang , Po-Min Tu , Ya-Wen Lin , Shun-Kuei Yang
IPC分类号： H01L33/22
CPC分类号： H01L33/58 , H01L33/10 , H01L33/22 , H01L33/32
摘要： A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.
摘要翻译：发光二极管包括衬底，衬底上的过渡层和过渡层上的外延层。过渡层包括具有平坦顶表面的平坦区域和具有粗糙顶表面的图案区域。 AlN材料包括由多个球体组成的第一部分和由多个球团组成的第二部分。球体在平坦区域和图案化区域处于过渡层的顶表面上。 s条位于图案区域中限定的凹槽中。在s条和外延层的底表面之间形成气隙。 AlN材料的球体和块状物有助于将由外延层产生的光反射到LED的光输出表面。

5. 发明授权

US08574939B2 Semiconductor optoelectronics structure with increased light extraction efficiency and fabrication method thereof 失效
标题翻译：具有提高光提取效率的半导体光电结构及其制造方法
公开(公告)号：US08574939B2
公开(公告)日：2013-11-05
申请号：US12836075
申请日：2010-07-14
申请人： Shih Cheng Huang , Po Min Tu , Peng Yi Wu , Wen Yu Lin , Chih Pang Ma , Tzu Chien Hong , Chia Hui Shen
发明人： Shih Cheng Huang , Po Min Tu , Peng Yi Wu , Wen Yu Lin , Chih Pang Ma , Tzu Chien Hong , Chia Hui Shen
IPC分类号： H01L33/22
CPC分类号： H01L33/36 , H01L33/007 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/22
摘要： A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.
摘要翻译：提出了一种提高光提取效率的半导体光电结构及其制造方法。半导体光电结构包括形成在半导体光电子结构的有源层下方的连续沟槽，以反射来自有源层的光，从而通过光输出表面引导更多的光，从而增加来自半导体光电子结构的光强度。

6. 发明申请

US20130161652A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20130161652A1
公开(公告)日：2013-06-27
申请号：US13570214
申请日：2012-08-08
申请人： Ya-Wen LIN , Po-Min TU , Shih-Cheng HUANG , Chia-Hung HUANG , Shun-Kuei YANG
发明人： Ya-Wen LIN , Po-Min TU , Shih-Cheng HUANG , Chia-Hung HUANG , Shun-Kuei YANG
IPC分类号： H01L33/02
CPC分类号： H01L33/22 , H01L33/007
摘要： A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 μm to 2.5 μm.
摘要翻译：发光二极管（LED）包括衬底，缓冲层和外延结构。衬底具有形成在其上的图案化结构的第一表面。图案形成结构包括多个突起。缓冲层布置在基板的第一表面上。外延结构布置在缓冲层上。外延结构包括顺序地布置在缓冲层上的第一半导体层，有源层和第二半导体层。第一半导体层具有附着到有源层的第二表面。每个突起的峰值与第一半导体层的第二表面之间的距离为0.5μm至2.5μm。

7. 发明授权

US08232122B2 Method for fabricating light emitting diode chip 失效
标题翻译：制造发光二极管芯片的方法
公开(公告)号：US08232122B2
公开(公告)日：2012-07-31
申请号：US13207439
申请日：2011-08-11
申请人： Po-Min Tu , Shih-Cheng Huang
发明人： Po-Min Tu , Shih-Cheng Huang
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0095 , Y10S438/945
摘要： A method for fabricating an LED chip is provided. Firstly, a SiO2 pattern layer is formed on a top surface of a substrate. Then, lighting structures are grown on a portion of the top surface of substrate without the SiO2 pattern layer thereon. Thereafter, the SiO2 pattern layer is removed by wet etching to form spaces between bottoms of the lighting structures and substrate. An etching solution is used to permeate into the spaces and etch the lighting structures from the bottoms thereof, whereby the lighting structures each with a trapezoid shape is formed. Sidewalls of each of the lighting structures are inclined inwardly along a top-to-bottom direction.
摘要翻译：提供一种制造LED芯片的方法。首先，在基板的上表面上形成SiO 2图形层。然后，在衬底的顶表面的一部分上生长照明结构，而不在其上形成SiO 2图案层。此后，通过湿蚀刻去除SiO 2图案层，以在照明结构和基板的底部之间形成空间。使用蚀刻溶液渗透到空间中并从其底部蚀刻照明结构，由此形成各自具有梯形形状的照明结构。每个照明结构的侧壁沿着顶部到底部的方向向内倾斜。

8. 发明申请

US20120175646A1 LIGHT EMITTING DIODE MODULE 有权
标题翻译：发光二极管模块
公开(公告)号：US20120175646A1
公开(公告)日：2012-07-12
申请号：US13305757
申请日：2011-11-29
申请人： SHIH-CHENG HUANG , PO-MIN TU
发明人： SHIH-CHENG HUANG , PO-MIN TU
IPC分类号： H01L33/32
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/12041 , H01L2924/00
摘要： An LED module includes a base, a circuit layer formed on the base and multiple LEDs each having an LED die connecting to the circuit layer. The circuit layer includes multiple connecting sections. Each connecting section includes a first connecting part and a second connecting part electrically insulating and spaced from each other. Each LED includes an electrode layer having a first section and a second section electrically insulated from the first section and respectively electrically connecting the first and second connecting parts of a corresponding connecting section. The LED die is electrically connected to the second section. A transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. An electrically insulating layer is located between the LED die and surrounding the LED die except where the transparent electrically conductive layer connects.
摘要翻译： LED模块包括基座，形成在基座上的电路层和多个LED，每个LED具有连接到电路层的LED管芯。电路层包括多个连接部分。每个连接部分包括彼此电绝缘和间隔开的第一连接部分和第二连接部分。每个LED包括具有第一部分的电极层和与第一部分电绝缘并分别电连接相应连接部分的第一和第二连接部分的第二部分。 LED管芯与第二部分电连接。在LED管芯上形成透明导电层，并将LED管芯电连接到电极层的第一部分。除了透明导电层连接之外，电绝缘层位于LED管芯之间并围绕LED管芯。

9. 发明申请

US20120175630A1 LIGHT EMITTING DIODES AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20120175630A1
公开(公告)日：2012-07-12
申请号：US13300731
申请日：2011-11-21
申请人： PO-MIN TU , SHIH-CHENG HUANG , YA-WEN LIN
发明人： PO-MIN TU , SHIH-CHENG HUANG , YA-WEN LIN
IPC分类号： H01L33/02 , H01L33/48
CPC分类号： H01L33/52 , H01L24/24 , H01L33/38 , H01L33/382 , H01L33/42 , H01L33/44 , H01L2924/181 , H01L2924/00012
摘要： An LED comprises an electrode layer comprising a first a second sections electrically insulated from each other; an electrically conductive layer on the second section, an electrically conductive pole protruding from the electrically conductive layer; an LED die comprising an electrically insulating substrate on the electrically conductive layer, and a P-N junction on the electrically insulating substrate, the P-N junction comprising a first electrode and a second electrode, the electrically conductive pole extending through the electrically insulating substrate to electrically connect the first electrode to the second section; a transparent electrically conducting layer on the LED die, the transparent electrically conducting layer electrically connecting the second electrode to the first section; and an electrically insulating layer between the LED die, the electrically conductive layer, and the transparent electrically conducting layer, wherein the electrically insulating layer insulates the transparent electrically conducting layer from the electrically conductive layer and the second section.
摘要翻译： LED包括电极层，电极层包括彼此电绝缘的第一部分和第二部分; 所述第二部分上的导电层，从所述导电层突出的导电极; 包括在所述导电层上的电绝缘衬底的LED管芯和所述电绝缘衬底上的PN结，所述PN结包括第一电极和第二电极，所述导电极延伸穿过所述电绝缘衬底以电连接第一电极到第二部分; 在所述LED管芯上的透明导电层，所述透明导电层将所述第二电极与所述第一部分电连接; 以及在LED管芯，导电层和透明导电层之间的电绝缘层，其中电绝缘层使透明导电层与导电层和第二部分绝缘。

10. 发明申请

US20120164773A1 METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP 失效
标题翻译：制造半导体照明芯片的方法
公开(公告)号：US20120164773A1
公开(公告)日：2012-06-28
申请号：US13216260
申请日：2011-08-24
申请人： PO-MIN TU , SHIH-CHENG HUANG , TZU-CHIEN HUNG , YA-WEN LIN
发明人： PO-MIN TU , SHIH-CHENG HUANG , TZU-CHIEN HUNG , YA-WEN LIN
IPC分类号： H01L33/06
CPC分类号： H01L33/20 , H01L33/007 , H01L33/12
摘要： A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching layer; forming a second etching layer on the connecting layer; forming a lighting structure on the second etching layer; and etching the first etching layer, the connecting layer, the second etching layer and the lighting structure, wherein an etching rate of the first etching layer and the second etching layer is lager than that of the connecting layer and the lighting structure, thereby to form the connecting layer and the lighting structure each with an inverted frustum-shaped structure.
摘要翻译：一种制造半导体照明芯片的方法包括以下步骤：提供衬底; 在所述基板上形成第一蚀刻层; 在所述第一蚀刻层上形成连接层; 在连接层上形成第二蚀刻层; 在所述第二蚀刻层上形成照明结构; 并且蚀刻第一蚀刻层，连接层，第二蚀刻层和照明结构，其中第一蚀刻层和第二蚀刻层的蚀刻速率比连接层和照明结构的蚀刻速率大，从而形成连接层和照明结构均具有倒立的截头锥形结构。

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