会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Method and system for defect evaluation using quiescent power plane current (IDDQ) voltage linearity
    • 使用静态功率平面电流(IDDQ)电压线性度进行缺陷评估的方法和系统
    • US20050125711A1
    • 2005-06-09
    • US10728172
    • 2003-12-03
    • Anne GattikerPhillip Nigh
    • Anne GattikerPhillip Nigh
    • G01R31/30G06F11/00
    • G01R31/3008
    • A method and system for defect evaluation using IDDQ voltage linearity provides improved IDDQ testing for determining whether manufacturing defects in a VLSI device are likely to cause functional faults. IDDQ data is collected at multiple power plane voltages (VDDs) for a test vector at which a fault is activated. The IDDQ vs. VDD is then examined and a range of VDDs over which the characteristic IDDQs are non-linear with respect to VDD is determined. Peaks in the first derivative of the IDDQ vs. VDD curve indicate a particular VDD at which the onset of non-linearity in the IDDQ occurs. The VDD point below which the curve is non-linear indicates the relative resistance of a fault with respect to the driving point resistance of the node at which the fault is located. The relative resistance is directly determinative of additional circuit delay cause by the fault and/or whether the fault will cause a logic level transmission failure. Therefore, the range of VDDs for which the IDDQ curve is linear provides a pass/fail indication that can be used to reject devices in manufacturing test.
    • 使用IDDQ电压线性度进行缺陷评估的方法和系统提供改进的IDDQ测试,用于确定VLSI设备中的制造缺陷是否可能导致功能故障。 IDDQ数据在多个电源平面电压(VDD)下收集,用于启动故障的测试矢量。 然后检查IDDQ与VDD,并确定特性IDDQ相对于VDD是非线性的VDD范围。 IDDQ与VDD曲线的一阶导数中的峰值表示IDDQ中发生非线性发生的特定VDD。 曲线非线性以下的VDD点表示故障相对于故障位置的节点的驱动点电阻的相对电阻。 相对电阻直接决定了故障引起的附加电路延迟和/或故障是否会导致逻辑电平传输故障。 因此,IDDQ曲线为线性的VDD的范围提供了可用于在制造测试中拒绝器件的通过/失败指示。
    • 3. 发明申请
    • Functional pattern logic diagnostic method
    • 功能模式逻辑诊断方法
    • US20050289426A1
    • 2005-12-29
    • US11166019
    • 2005-06-25
    • Donato ForlenzaFranco MolikaPhillip Nigh
    • Donato ForlenzaFranco MolikaPhillip Nigh
    • G01R31/3185G01R31/28G06F11/00
    • G01R31/318586G01R31/318544
    • A method of diagnosing semiconductor device functional testing failures by combining deterministic and functional testing to create a new test pattern based on functional failure by determining the location of the type of error in the failing circuit. This is accomplished by identifying the failing vector during the functional test, observing the states of the failed device by unloading the values of the latches from the LSSD scan chain before the failing vector, generating a LOAD from the unloaded states of the latches, applying the generated LOAD as the first event of a newly created independent LSSD deterministic pattern, applying the primary inputs and Clocks that produced the failure to a correctly operating device, unloading the output of the correctly operating device to generate a deterministic LSSD pattern; and applying the generated deterministic LSSD pattern to the failing device to diagnose the failure using existing LSSD deterministic tools.
    • 一种诊断半导体器件功能测试故障的方法,通过组合确定性和功能测试,通过确定故障电路中错误类型的位置,基于功能故障创建新的测试模式。 这是通过在功能测试期间识别故障向量来实现的,通过在故障向量之前从LSSD扫描链中卸载锁存器的值来观察故障设备的状态,从锁存器的未加载状态生成LOAD,应用 生成LOAD作为新创建的独立LSSD确定性模式的第一个事件,将产生故障的主输入和时钟应用于正确操作的设备,卸载正确操作设备的输出以生成确定性LSSD模式; 以及将生成的确定性LSSD模式应用于故障设备,以使用现有的LSSD确定性工具来诊断故障。
    • 5. 发明申请
    • Designing Scan Chains With Specific Parameter Sensitivities to Identify Process Defects
    • 设计具有特定参数敏感度的扫描链来识别过程缺陷
    • US20060026472A1
    • 2006-02-02
    • US10710642
    • 2004-07-27
    • James AdkissonGreg BazanJohn CohnMatthew GradyLeendert HuismanMark JaffePhillip NighLeah PastelThomas SopchakDavid SweenorDavid Vallett
    • James AdkissonGreg BazanJohn CohnMatthew GradyLeendert HuismanMark JaffePhillip NighLeah PastelThomas SopchakDavid SweenorDavid Vallett
    • G06F17/50G01R31/28
    • G06F17/5045G01R31/31855G01R31/318586H01L22/34H01L2924/0002H01L2924/00
    • A method is disclosed for designing scan chains in an integrated circuit chip with specific parameter sensitivities to identify fabrication process defects causing test fails and chip yield loss. The composition of scan paths in the integrated circuit chip is biased to allow them to also function as on-product process monitors. The method adds grouping constraints that bias scan chains to have common latch cell usage where possible, and also biases cell routing to constrain scan chain routing to given restricted metal layers for interconnects. The method assembles a list of latch design parameters which are sensitive to process variation or integrity, and formulates a plan for scan chain design which determines the number and the length of scan chains. A model is formulated of scan chain design based upon current state of yield and process integrity, wherein certain latch designs having dominant sensitivities are chosen for specific ones of the scan chains on the chip. The model is provided as input parameters to a global placement and wiring program used to lay out the scan chains. Test data on the chip is then analyzed to determine and isolate systematic yield problems denoted by attributes of a statistically significant failing population of a specific type of scan chain.
    • 公开了一种用于设计具有特定参数灵敏度的集成电路芯片中的扫描链的方法,以识别导致测试失败和芯片产量损失的制造工艺缺陷。 集成电路芯片中的扫描路径的组成被偏置以允许它们也用作产品过程监视器。 该方法增加了分组约束,使得扫描链偏置以在可能的情况下具有共同的锁存单元使用,并且还偏置小区路由以将扫描链路由限制到用于互连的给定受限金属层。 该方法组合了对过程变化或完整性敏感的锁存器设计参数列表,并且制定了扫描链设计的计划,该计划决定了扫描链的数量和长度。 基于产量和过程完整性的当前状态来制定扫描链设计的模型,其中为芯片上的特定扫描链选择具有主要灵敏度的某些锁存器设计。 该模型作为输入参数提供给用于布置扫描链的全局放置和布线程序。 然后对芯片上的测试数据进行分析,以确定和分离由特定类型的扫描链的统计学显着失败群体的属性表示的系统产量问题。