会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Solar cell
    • 太阳能电池
    • US20070169808A1
    • 2007-07-26
    • US11339851
    • 2006-01-26
    • Nazir KheraniBhanu RayaprolDavit YeghikyanStefan Zukotynski
    • Nazir KheraniBhanu RayaprolDavit YeghikyanStefan Zukotynski
    • H01L31/00
    • H01L31/077H01L31/02167H01L31/022441H01L31/0745H01L31/0747Y02E10/50
    • The present invention provides a thin film amorphous silicon-crystalline silicon back heterojunction and back surface field device configuration for a heterojunction solar cell. The configuration is attained by the formation of heterojunctions on the back surface of crystalline silicon at low temperatures. Low temperature fabrication allows for the application of low resolution lithography and/or shadow masking processes to produce the structures. The heterojunctions and interface passivation can be formed through a variety of material compositions and deposition processes, including appropriate surface restructing techniques. The configuration achieves separation of optimization requirements for light absorption and carrier generation at the front surface on which the light is incident, and in the bulk, and charge carrier collection at the back of the device. The shadowing losses are eliminated by positioning the electrical contacts at the back thereby removing them from the path of the incident light. Back contacts need optimization only for maximum charge carrier collection without bothering about shading losses. A range of elements/alloys may be used to effect band-bending. All of the above features result in a very high efficiency solar cell. The open circuit voltage of the back heterojunction device is higher than that of an all-crystalline device. The solar cell configurations are equally amenable to crystalline silicon wafer absorber as well as thin silicon layers formed by using a variety of fabrication processes. The configurations can be used for radiovoltaic and electron-voltaic energy conversion devices.
    • 本发明提供了一种用于异质结太阳能电池的薄膜非晶硅晶体硅背面异质结和背面场设备配置。 该结构通过在低温下在结晶硅的背面上形成异质结来实现。 低温制造允许应用低分辨率光刻和/或阴影掩蔽工艺来产生结构。 异质结和界面钝化可以通过各种材料组成和沉积过程形成,包括适当的表面重构技术。 该配置实现了在光入射的前表面处的光吸收和载流子产生的优化要求的分离,以及在本体中的装置背面的电荷载体收集。 通过将电触点定位在背面而消除阴影损失,从而将它们从入射光的路径移除。 后面的联系人只需要优化最大的电荷载体收集,而不用担心遮蔽损失。 可以使用一系列元素/合金来实现带弯曲。 所有上述特征都产生了非常高效率的太阳能电池。 背面异质结器件的开路电压高于全晶体器件的开路电压。 太阳能电池结构同样适用于晶体硅晶片吸收器以及通过使用各种制造工艺形成的薄硅层。 该配置可用于放射和电子能量转换装置。