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    • 10. 发明授权
    • Semiconductor film transistor
    • 半导体薄膜晶体管
    • US07112818B2
    • 2006-09-26
    • US10058116
    • 2002-01-29
    • Mutsumi Kimura
    • Mutsumi Kimura
    • H01L29/78
    • H01L29/42384G02F1/1368H01L27/12H01L29/78609
    • In accordance with the invention, the width of a gate electrode is smaller than the width of the semiconductor film. A sub gate electrode connected to the gate electrode is disposed, at the gate electrode side of the semiconductor film, away from the semiconductor film more than gate electrode. The width of the sub gate electrodes is larger than the width of the semiconductor film. Ends of the semiconductor film have regions formed of an intrinsic semiconductor which is not doped with dopant. In a semiconductor device, this structure is suitable to reduce degradation over time which is caused by an increase of the electric field strength or the carrier concentration at the ends of the semiconductor film.
    • 根据本发明,栅电极的宽度小于半导体膜的宽度。 连接到栅电极的子栅极电极设置在半导体膜的栅电极侧,远离栅电极远离半导体膜。 子栅电极的宽度大于半导体膜的宽度。 半导体膜的端部具有不掺杂掺杂剂的本征半导体形成的区域。 在半导体器件中,该结构适合于减小由半导体膜的端部的电场强度或载流子浓度的增加引起的随着时间的劣化。