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1. 发明授权

US07999289B2 Monolithic integrated circuit of a field-effect semiconductor device and a diode 有权
标题翻译：场效半导体器件和二极管的单片集成电路
公开(公告)号：US07999289B2
公开(公告)日：2011-08-16
申请号：US12711846
申请日：2010-02-24
申请人： Mio Suzuki , Akio Iwabuchi
发明人： Mio Suzuki , Akio Iwabuchi
IPC分类号： H01L29/778
CPC分类号： H01L27/0605
摘要： A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.
摘要翻译：诸如HEMT或MESFET的场效应半导体器件与肖特基二极管单片集成以用于反馈，再生或保护目的。场效应半导体器件包括在源极和漏极之间形成有源极，漏极和栅极的主半导体区域。还形成在主半导体区域上，优选在栅极和漏极之间，是电耦合到源极的肖特基电极。肖特基电极提供与主半导体区域结合的肖特基二极管。从肖特基电极确保电流流动，而不会被从栅极扩大的耗尽区中断地流出。

2. 发明申请

US20070228477A1 MONOLITHIC INTEGRATED CIRCUIT OF A FIELD-EFFECT SEMICONDUCTOR DEVICE AND A DIODE 审中-公开
标题翻译：场效应半导体器件和二极管的单片集成电路
公开(公告)号：US20070228477A1
公开(公告)日：2007-10-04
申请号：US11694525
申请日：2007-03-30
申请人： Mio Suzuki , Akio Iwabuchi
发明人： Mio Suzuki , Akio Iwabuchi
IPC分类号： H01L29/94 , H01L27/095
CPC分类号： H01L27/0605
摘要： A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.
摘要翻译：诸如HEMT或MESFET的场效应半导体器件与肖特基二极管单片集成以用于反馈，再生或保护目的。场效应半导体器件包括在源极和漏极之间形成有源极，漏极和栅极的主半导体区域。还形成在主半导体区域上，优选在栅极和漏极之间，是电耦合到源极的肖特基电极。肖特基电极提供与主半导体区域结合的肖特基二极管。从肖特基电极确保电流流动，而不会被从栅极扩大的耗尽区中断地流出。

3. 发明申请

US20070187718A1 NORMALLY-OFF FIELD-EFFECT SEMICONDUCTOR DEVICE, AND A METHOD OF INITIALIZING THE SAME 有权
标题翻译：正常的场效应半导体器件及其初始化方法
公开(公告)号：US20070187718A1
公开(公告)日：2007-08-16
申请号：US11674051
申请日：2007-02-12
申请人： Mio Suzuki , Akio Iwabuchi
发明人： Mio Suzuki , Akio Iwabuchi
IPC分类号： H01L29/739
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/42324 , H01L29/66462 , H01L29/66856 , H01L29/7787
摘要： A HEMT-type field-effect semiconductor device has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source and a drain overlie the electron supply layer. A carrier storage layer overlies the electron supply layer via an insulator, and a gate overlies the carrier storage layer via another insulator. Upon application of an initializer voltage to the gate, the carrier storage layer has stored therein a sufficient amount of carriers to hold the device off even without voltage application to the gate. An initializer circuit is also disclosed whereby the device is initialized automatically for normally-off operation.
摘要翻译： HEMT型场效应半导体器件具有形成在硅衬底上的主半导体区域。主半导体区域是衬底上的缓冲层，缓冲层上的电子传输层和电子迁移层上的电子供给层的叠层。源极和漏极覆盖电子供应层。载流子存储层经由绝缘体覆盖电子供给层，并且栅极经由另一绝缘体覆盖载流子存储层。在对栅极施加初始化器电压时，载体存储层已经在其中存储了足够量的载流子，以便即使没有电压施加到栅极也能保持器件关断。还公开了一种初始化器电路，其中该装置被自动初始化以进行常关断操作。

4. 发明申请

US20110260777A1 MONOLITHIC INTEGRATED CIRCUIT 有权
标题翻译：单片集成电路
公开(公告)号：US20110260777A1
公开(公告)日：2011-10-27
申请号：US13178988
申请日：2011-07-08
申请人： Mio Suzuki , Akio Iwabuchi
发明人： Mio Suzuki , Akio Iwabuchi
IPC分类号： H03K17/74 , H01L27/02
CPC分类号： H01L27/0605
摘要： A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.
摘要翻译：诸如HEMT或MESFET的场效应半导体器件与肖特基二极管单片集成以用于反馈，再生或保护目的。场效应半导体器件包括在源极和漏极之间形成有源极，漏极和栅极的主半导体区域。还形成在主半导体区域上，优选在栅极和漏极之间，是电耦合到源极的肖特基电极。肖特基电极提供与主半导体区域结合的肖特基二极管。从肖特基电极确保电流流动，而不会被从栅极扩大的耗尽区中断地流出。

5. 发明申请

US20080226516A1 MICROREACTOR SYSTEM 审中-公开
标题翻译：微机系统
公开(公告)号：US20080226516A1
公开(公告)日：2008-09-18
申请号：US12018477
申请日：2008-01-23
申请人： Mio Suzuki , Shigenori Togashi , Tadashi Sano
发明人： Mio Suzuki , Shigenori Togashi , Tadashi Sano
IPC分类号： B01J19/00
CPC分类号： B01J19/0093 , B01F5/0646 , B01F5/0647 , B01F13/0059 , B01F13/1013 , B01F13/1022 , B01J2219/00783 , B01J2219/00869 , B01J2219/00873 , B01J2219/00889 , B01J2219/00934 , B01J2219/00941 , B01J2219/00959 , B01J2219/0097 , B01J2219/00984
摘要： It is an object of the present invention to ensure quite high-speed and highly efficient production using the microreactors and facilitate transition from laboratory-basis synthesis to industrial production.A microreactor system collecting a mixture solution obtained by mixing up material solutions in a microreactor includes a plurality of microreactors arranged in parallel; a flowmeter disposed on a downstream side; a detector detecting a composition of the mixture solution; and a processing device calculating both a reaction time from when the material solutions are mixed up until the detector detects the composition of the mixture solution and an yield of the target product. The processing device includes means for changing the amount of each of the material solutions supplied by the pump in each of the microreactors; means for calculating and storing the reaction time and the yield of the target product for every change in the supply amount; and means for deciding which of the plurality of microreactors is selected on the basis of the reaction time and the yield of the target product.
摘要翻译：本发明的目的是确保使用微反应器的相当高速和高效的生产，并促进从实验室基础合成向工业生产的转变。收集通过在微反应器中混合材料溶液获得的混合溶液的微反应器系统包括平行布置的多个微反应器; 设置在下游侧的流量计; 检测器，检测混合溶液的组成; 以及计算从材料溶液混合直到检测器检测到混合溶液的组成和目标产物的产率的反应时间的处理装置。处理装置包括用于改变由每个微反应器中的泵供应的每种材料溶液的量的装置; 用于每次供应量变化计算和存储目标产品的反应时间和产量的装置; 以及用于基于目标产品的反应时间和产量来决定多个微反应器中的哪一个被选择的装置。

6. 发明申请

US20080081005A1 CHEMICAL SYNTHESIS DEVICE 审中-公开
标题翻译：化学合成装置
公开(公告)号：US20080081005A1
公开(公告)日：2008-04-03
申请号：US11835457
申请日：2007-08-08
申请人： Mio SUZUKI , Shigenori TOGASHI , Tetsuro MIYAMOTO , Tadashi SANO
发明人： Mio SUZUKI , Shigenori TOGASHI , Tetsuro MIYAMOTO , Tadashi SANO
IPC分类号： G05D7/00
CPC分类号： B01J19/0093 , B01J19/0006 , B01J2219/00191 , B01J2219/00869 , B01J2219/0095 , B01J2219/00961
摘要： An object of the present invention is to increase the volume of production even with the use of a microreactor, and to improve the quality of reaction products. A chemical synthesis device with a microreactor having a microchannel includes a plurality of microreactors arranged in parallel; a raw material tank that stores a raw material; a pump that delivers the raw material; an inlet solenoid valve and an outlet solenoid valve disposed at the inlet and outlet sides, respectively, of each of the microreactor; a temperature sensor that detects the temperature in the microreactor; and a pressure gage installed at the outlet side of the pump. The chemical synthesis device controls, in connection with values detected by the temperature sensor and the pressure gage, the opening and closing of the inlet solenoid valve and the outlet solenoid valve as well as a rate of flow from the pump.
摘要翻译：本发明的目的在于，通过使用微反应器来增加生产量，提高反应产物的质量。具有微通道的微反应器的化学合成装置包括平行布置的多个微反应器; 储存原料的原料罐; 提供原料的泵; 分别设置在每个微反应器的入口侧和出口侧的入口电磁阀和出口电磁阀; 检测微反应器中的温度的温度传感器; 以及安装在泵出口侧的压力表。化学合成装置与温度传感器和压力表检测到的值相关联，控制入口电磁阀和出口电磁阀的打开和关闭以及从泵的流量。

7. 发明授权

US07901639B2 Reaction apparatus 有权
标题翻译：反应装置
公开(公告)号：US07901639B2
公开(公告)日：2011-03-08
申请号：US11829147
申请日：2007-07-27
申请人： Tadashi Sano , Mio Suzuki , Yukako Asano , Shigenori Togashi , Tsutomu Kawamura , Tomofumi Shiraishi
发明人： Tadashi Sano , Mio Suzuki , Yukako Asano , Shigenori Togashi , Tsutomu Kawamura , Tomofumi Shiraishi
IPC分类号： B01J19/00 , C07B59/00
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00869 , B01J2219/00873 , B01J2219/00891
摘要： There is provided a reaction apparatus which is capable of keeping the pressure inside the reactor and is applicable to various fields. This reaction apparatus comprises: a raw material tank (2) for storing a raw material; a high-pressure pump (3) communicated with the raw material tank (2) and designed to deliver the raw material therefrom; a reactor (1) which is disposed on the downstream side of the high-pressure pump (3) and designed to be supplied with the raw material in a compressed state; a heating bath (11) for heating the reactor (1) to promote a reaction; and a product tank (7) for receiving and recovering a product; wherein the reaction apparatus is further equipped with an inlet port which is interposed between the heating bath (11) and the product tank (7), and with an injection pump (6) for injecting an injecting liquid through the inlet port, whereby a pressure of product flowing into the product tank (7) is enabled to be reduced by making use of the flow rate of the injecting liquid.
摘要翻译：提供了能够保持反应器内的压力并适用于各种领域的反应装置。该反应装置包括：原料罐（2），用于储存原料; 与原料罐（2）连通并设计成从原料罐（2）输送原料的高压泵（3）反应器（1），其设置在所述高压泵（3）的下游侧并设计成以压缩状态供给所述原料; 用于加热反应器（1）以促进反应的加热浴（11）和用于接收和回收产品的产品罐（7）; 其特征在于，所述反应装置还具有插入在所述加热槽（11）和所述产品罐（7）之间的入口端口，以及用于通过所述入口喷射注入液体的注入泵（6）能够通过利用注射液的流量来减少流入产品罐（7）的产品。

8. 发明授权

US07859019B2 Normally-off field-effect semiconductor device 有权
标题翻译：常关场效应半导体器件
公开(公告)号：US07859019B2
公开(公告)日：2010-12-28
申请号：US11674051
申请日：2007-02-12
申请人： Mio Suzuki , Akio Iwabuchi
发明人： Mio Suzuki , Akio Iwabuchi
IPC分类号： H01L29/778
CPC分类号： H01L29/812 , H01L29/2003 , H01L29/42324 , H01L29/66462 , H01L29/66856 , H01L29/7787
摘要： A HEMT-type field-effect semiconductor device has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source and a drain overlie the electron supply layer. A carrier storage layer overlies the electron supply layer via an insulator, and a gate overlies the carrier storage layer via another insulator. Upon application of an initialiser voltage to the gate, the carrier storage layer has stored therein a sufficient amount of carriers to hold the device off even without voltage application to the gate. An initialiser circuit is also disclosed whereby the device is initialized automatically for normally-off operation.
摘要翻译： HEMT型场效应半导体器件具有形成在硅衬底上的主半导体区域。主半导体区域是衬底上的缓冲层，缓冲层上的电子传输层和电子迁移层上的电子供给层的叠层。源极和漏极覆盖电子供应层。载流子存储层经由绝缘体覆盖电子供给层，并且栅极经由另一绝缘体覆盖载流子存储层。在向栅极施加初始化电压时，载体存储层已经在其中存储了足够量的载流子，以便即使没有电压施加到栅极也可以将器件保持在关闭状态。还公开了初始化电路，由此该装置被自动初始化以进行常关断操作。

9. 发明申请

US20070228422A1 MONOLITHIC INTEGRATED CIRCUIT OF A FIELD-EFFECT SEMICONDUCTOR DEVICE AND A DIODE 审中-公开
公开(公告)号：US20070228422A1
公开(公告)日：2007-10-04
申请号：US11694673
申请日：2007-03-30
申请人： Mio Suzuki , Akio Iwabuchi
发明人： Mio Suzuki , Akio Iwabuchi
IPC分类号： H01L29/76
CPC分类号： H01L27/0605
摘要： A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.

10. 发明申请

US20100155781A1 MONOLITHIC INTEGRATED CIRCUIT OF A FIELD-EFFECT SEMICONDUCTOR DEVICE AND A DIODE 有权
标题翻译：场效应半导体器件和二极管的单片集成电路
公开(公告)号：US20100155781A1
公开(公告)日：2010-06-24
申请号：US12711846
申请日：2010-02-24
申请人： Mio Suzuki , Akio Iwabuchi
发明人： Mio Suzuki , Akio Iwabuchi
IPC分类号： H01L27/06
CPC分类号： H01L27/0605
摘要： A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate.
摘要翻译：诸如HEMT或MESFET的场效应半导体器件与肖特基二极管单片集成以用于反馈，再生或保护目的。场效应半导体器件包括在源极和漏极之间形成有源极，漏极和栅极的主半导体区域。还形成在主半导体区域上，优选在栅极和漏极之间，是电耦合到源极的肖特基电极。肖特基电极提供与主半导体区域结合的肖特基二极管。从肖特基电极确保电流流动，而不会被从栅极扩大的耗尽区中断地流出。

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