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1. 发明授权

US6013191A Method of polishing CVD diamond films by oxygen plasma 失效
标题翻译：通过氧等离子体抛光CVD金刚石膜的方法
公开(公告)号：US6013191A
公开(公告)日：2000-01-11
申请号：US958474
申请日：1997-10-27
申请人： Firooz Nasser-Faili , John A. Herb , Miguel A. Monreno
发明人： Firooz Nasser-Faili , John A. Herb , Miguel A. Monreno
IPC分类号： C30B33/12 , C30B29/04 , C30B33/00 , H01L21/302
CPC分类号： C30B33/00 , C30B29/04
摘要： A method for polishing the surface of a diamond film with a low power density plasma in a reactor which comprises disposing O.sub.2 gas and a fluorinated gas such as SF.sub.6, NF.sub.3, and C.sub.2 F.sub.6 in the reactor, providing power to the reactor so that the power density in the reactor is between about 1.0 watts/cm.sup.2 and about 1.1 watts/cm.sup.2 for a first duration, and maintaining temperature in the reactor at between about 200.degree. to about 400.degree.. The method may alternatively comprise disposing a sputter gas such as Ar,O.sub.2 or N.sub.2 in the reactor, providing power to the reactor so that the power density in the reactor is between about 3.0 watts/cm.sup.2 and about 7.5 watts/cm.sup.2 for a first duration, and performing a sputter etch, disposing O.sub.2 gas and a fluorinated gas such as SF.sub.6, NF.sub.3, and C.sub.2 F.sub.6 in the reactor, and providing power to the reactor so that the power density in the reactor is between about 1.5 watts/cm.sup.2 and about 3.0 watts/cm.sup.2 for a second duration.
摘要翻译：一种用于在反应器中用低功率密度等离子体抛光金刚石膜的表面的方法，该方法包括在反应器中配置O 2气体和氟化气体如SF 6，NF 3和C 2 F 6，向反应器提供功率密度在反应器中第一持续时间在约1.0瓦特/平方厘米至约1.1瓦特/平方厘米之间，并且将反应器中的温度维持在约200至约400度之间。该方法可以可选地包括在反应器中设置诸如Ar，O 2或N 2的溅射气体，为反应器提供电力，使得反应器中的功率密度在第一持续时间内在约3.0瓦/ cm 2和约7.5瓦/ cm 2之间，并进行溅射蚀刻，将O 2气体和诸如SF 6，NF 3和C 2 F 6的氟化气体置于反应器中，并向反应器提供动力，使得反应器中的功率密度在约1.5瓦/ cm2至约3.0之间瓦/平方厘米。

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