专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08784737B2 Introducing an analyte into a chemical analyzer 有权
标题翻译：将分析物引入化学分析仪
公开(公告)号：US08784737B2
公开(公告)日：2014-07-22
申请号：US13367755
申请日：2012-02-07
申请人： David Rafferty , Michael Spencer , James Wylde , Pedro Ojeda , Thomas Bowden
发明人： David Rafferty , Michael Spencer , James Wylde , Pedro Ojeda , Thomas Bowden
IPC分类号： G01N30/02 , G01N30/08 , G01N1/40 , G01N7/04 , G01N1/22 , G01N30/60
CPC分类号： G01N1/405 , G01N1/2214 , G01N7/04 , G01N30/08 , G01N30/6069 , G01N2030/085
摘要： A chemical pre-concentrator includes a conduit defining a flow path between two ends and having a heating element disposed within the conduit, such that the heating element has at least one sorbent material deposited directly on at least a portion of a conductive surface of the heating element. Some such heating elements are in the form of electrically conductive strips defining both a plurality of apertures through the strip and a series of undulations spaced along the flow path.
摘要翻译：化学预浓缩器包括限定两端之间的流动路径的导管并且具有设置在导管内的加热元件，使得加热元件具有直接沉积在加热的导电表面的至少一部分上的至少一种吸附剂材料元件。一些这样的加热元件是导电条形的形式，其限定穿过条带的多个孔和沿着流动路径间隔开的一系列起伏。

2. 发明授权

US08329252B2 Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor 有权
标题翻译：用于生长SiC的方法，通过化学气相沉积，在改性冷壁反应器中使用前体
公开(公告)号：US08329252B2
公开(公告)日：2012-12-11
申请号：US13194967
申请日：2011-07-31
申请人： Yuri Makarov , Michael Spencer
发明人： Yuri Makarov , Michael Spencer
IPC分类号： C23C16/32
CPC分类号： C23C16/32 , C23C16/4405 , C23C16/4411 , C30B25/02 , C30B25/08 , C30B29/36
摘要： A method is described for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, which comprises the steps of supplying original species SiH4 and CCl4 into a growth chamber, decomposing at elevated temperatures, producing decomposition product SiH2, SiH, Si, CCl3, or CCl2, producing interaction product HCl, CH3Cl, CH4, or SiH2Cl2, etching by one of the byproducts HCl to suppress Si nucleation, providing main species SiCl2 and CH4 at a cooled insert located on sides of a substrate holder and at a shower-head located on top of the substrate holder, in the growth chamber, with proper Si to C atom ratio and Si to Cl atom ratio, to suppress parasitic deposits, and depositing SiC on a substrate at a proper growth substrate temperature (1500 to 1800 centigrade range).
摘要翻译：使用化学气相沉积（CVD）技术描述了用于生长高质量外延碳化硅（SiC）膜和晶粒的方法，其包括将原始物质SiH 4和CCl 4供应到生长室中的步骤，在升高的温度下分解产生分解产物SiH2，SiH，Si，CCl3或CCl2，产生相互作用产物HCl，CH 3 Cl，CH 4或SiH 2 Cl 2，通过一种副产物HCl蚀刻以抑制Si成核，在冷却的插入物处提供主要的物质SiCl 2和CH 4 位于衬底保持器的侧面和位于衬底保持器顶部的淋浴头，在生长室中具有适当的Si至C原子比和Si至Cl原子比，以抑制寄生沉积物，并将SiC沉积在底物在适当的生长衬底温度（1500至1800摄氏度范围内）。

3. 发明申请

US20120226343A1 STENT DELIVERY SYSTEM 审中-公开
标题翻译： STENT交付系统
公开(公告)号：US20120226343A1
公开(公告)日：2012-09-06
申请号：US13411340
申请日：2012-03-02
申请人： Justin Vo , Michael Spencer , Sargon Bourang , William S. Henry , Hong Doan , Hanh Doan
发明人： Justin Vo , Michael Spencer , Sargon Bourang , William S. Henry , Hong Doan , Hanh Doan
IPC分类号： A61F2/84
CPC分类号： A61F2/95 , A61F2002/9583 , A61F2002/9665
摘要： A stent delivery system includes a delivery member, a frictional interfacing member disposed on a distal region of the delivery member, the frictional interfacing member comprising a plurality of perfusion channels, a self-expanding stent disposed over the respective frictional interfacing member and delivery member in a radially contracted configuration, and a sheath defining disposed over the respective self-expanding stent, frictional interfacing member, and delivery member, wherein the frictional interfacing member resists axial and/or rotational movement of the stent relative to the delivery member while the stent is in its radially contracted configuration, and wherein the perfusion channels permit fluid to flow from an interior region of the sheath proximal of the frictional interfacing member to an interior region of the sheath distal of the frictional interfacing member.
摘要翻译：支架输送系统包括输送构件，设置在输送构件的远侧区域上的摩擦接口构件，摩擦接口构件包括多个灌注通道，设置在相应摩擦接口构件和输送构件上方的自扩张支架径向缩小的构造，以及限定设置在相应的自扩张支架，摩擦接口构件和输送构件上方的护套，其中所述摩擦接口构件抵抗支架相对于输送构件的轴向和/或旋转运动，而支架是在其径向收缩构造中，并且其中所述灌注通道允许流体从所述摩擦接合构件的近侧的护套的内部区域流动到所述护套远离所述摩擦接合构件的内部区域。

4. 发明申请

US20120180576A1 Evacuating a Sample Chamber 有权
标题翻译：撤离样品室
公开(公告)号：US20120180576A1
公开(公告)日：2012-07-19
申请号：US13348390
申请日：2012-01-11
申请人： David Rafferty , James Wylde , Michael Spencer , Pedro Ojeda
发明人： David Rafferty , James Wylde , Michael Spencer , Pedro Ojeda
IPC分类号： G01N1/44
CPC分类号： H01J49/049 , G01N1/405 , G01N2001/028
摘要： In one general aspect, a sample is transferred into a mass spectrometer by capturing a sample on a collector, inserting the collector into a sample chamber coupled to the mass spectrometer and a vacuum pump, evacuating the sample chamber using the vacuum pump to reduce an internal pressure of the sample chamber to a level less than atmospheric pressure, heating the collector to release the sample from the collector, and introducing the sample into the mass spectrometer from the evacuated sample chamber.
摘要翻译：在一个一般方面，将样品转移到质谱仪中，通过在收集器上捕获样品，将收集器插入耦合到质谱仪的样品室和真空泵中，使用真空泵抽空样品室以减少内部样品室的压力达到低于大气压的水平，加热收集器以将样品从收集器中释放，并将样品从抽真空的样品室引入质谱仪。

5. 发明授权

US08088222B2 Method, system, and apparatus for the growth of on-axis SiC and similar semiconductor materials 有权
标题翻译：用于生长轴上SiC和类似半导体材料的方法，系统和装置
公开(公告)号：US08088222B2
公开(公告)日：2012-01-03
申请号：US11829215
申请日：2007-07-27
申请人： Yuri Makarov , Michael Spencer
发明人： Yuri Makarov , Michael Spencer
IPC分类号： C30B29/00
CPC分类号： C30B29/36 , C30B25/18
摘要： A novel approach for the growth of high-quality on-axis epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, is described here. The method includes a method of substrate preparation, which allows for the growth of “on-axis” SiC films, plus an approach giving the opportunity to grow silicon carbide on singular (a small-angle miscut) substrates, using halogenated carbon-containing precursors (carbon tetrachloride, CCl4, or halogenated hydrocarbons, CHCl3, CH2Cl2, or CH3Cl, or similar compounds or chemicals), or introducing other chlorine-containing species, in the gas phase, in the growth chamber. At gas mixtures greater than the critical amount, small clusters of SiC are etched, before they can become stable nuclei. The presence of chlorine and the formation of gas species allow an increased removal rate of these nuclei, in contrast to the growth without the presence of chlorine. Or, alternatively, the novel precursors introduced in the growth system reduce the effective supersaturation ratio of the Si species in the growth layer. The reduction of the supersaturation ratio reduces or eliminates the 2D (and 3C—SiC) nucleation which would occur due to the large terrace widths present on the on-axis wafers. This allows the growth of Silicon Carbide epitaxial layers on SiC substrates or composite substrates with monocrystalline layers. This can also be applied to the other semiconductors, chemicals, compounds, materials, growth methods, or devices.
摘要翻译：这里描述了使用化学气相沉积（CVD）技术生长高质量轴向外延碳化硅（SiC）膜和晶粒的新颖方法。该方法包括一种衬底制备方法，其允许“轴上”SiC膜的生长，以及使用卤代含碳前体在单个（小角度杂交）衬底上生长碳化硅的机会的方法（四氯化碳，CCl 4或卤代烃，CHCl 3，CH 2 Cl 2或CH 3 Cl，或类似的化合物或化学物质），或在气相中引入生长室中的其它含氯物质。在大于临界量的气体混合物中，SiC的小簇在它们变得稳定的核之前被蚀刻。与不存在氯的生长相反，氯的存在和气体物质的形成允许这些核的去除速率增加。或者，在生长系统中引入的新型前体降低生长层中Si物质的有效过饱和比。过饱和比的降低降低或消除了由于在轴上晶片上存在大的平台宽度而会发生的2D（和3C-SiC）成核。这允许在SiC衬底或具有单晶层的复合衬底上生长碳化硅外延层。这也可以应用于其他半导体，化学品，化合物，材料，生长方法或器件。

6. 发明申请

US20110287567A1 Betavoltaic battery with a shallow junction and a method for making same 有权
标题翻译：具有浅结的Betavoltaic电池及其制造方法
公开(公告)号：US20110287567A1
公开(公告)日：2011-11-24
申请号：US13195484
申请日：2011-08-01
申请人： Michael Spencer , MVS Chandrashekhar
发明人： Michael Spencer , MVS Chandrashekhar
IPC分类号： H01L21/20
CPC分类号： H01L21/02625 , G21H1/02 , G21H1/06 , H01L21/02378 , H01L21/02529 , H01L21/02579
摘要： This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+N− SiC junctions and a pillared or planar device surface (as an example). Junctions are deemed “ultra shallow”, since the thin junction layer (which is proximal to the device's radioactive source) is only 300 nm to 5 nm thick (as an example). In one example, tritium is used as a fuel source. In other embodiments, radioisotopes (such as Nickel-63, promethium or phosphorus-33) may be used. Low energy beta sources, such as tritium, emit low energy beta-electrons that penetrate very shallow distances (as shallow as 5 nm) in semiconductors, including SiC, and can result in electron-hole pair creation near the surface of a semiconductor device rather than pair creation in a device's depletion region. By contrast, as a high energy electron penetrates a semiconductor device surface, such as a diode surface, it produces electron hole-pairs that can be collected at (by drift) and near (by diffusion) the depletion region of the device. This is a betavoltaic device, made of ultra-shallow junctions, which allows such penetration of emitted lower energy electrons, thus, reducing or eliminating losses through electron-hole pair recombination at the surface.
摘要翻译：这是一种新型的SiC催化剂装置（作为实例），其包括一个或多个“超浅”P + N-SiC结和柱状或平面的器件表面（作为示例）。连接点被认为是“超浅”，因为薄接层（其接近器件的放射源）仅为300nm至5nm厚（作为示例）。在一个实例中，使用氚作为燃料源。在其它实施方案中，可以使用放射性同位素（例如，镍63，prom或磷-33）。诸如氚的低能β源发射出半导体（包括SiC）中非常浅的距离（浅达5nm）的低能β-电子，并且可以在半导体器件的表面附近产生电子 - 空穴对，而不是比设备耗尽区域中的配对创建。相反，当高能电子穿透诸如二极管表面的半导体器件表面时，它产生电子空穴对，其可以在（通过漂移）和靠近（通过扩散）器件的耗尽区域收集。这是一种由超浅结点制成的紫外线装置，其允许发射的较低能量电子的这种穿透，从而减少或消除在表面处的电子 - 空穴对复合的损耗。

7. 外观设计

USD647475S1 Charge base for vacuum cleaner 有权
标题翻译：吸尘器充电座
公开(公告)号：USD647475S1
公开(公告)日：2011-10-25
申请号：US29366950
申请日：2010-08-02
申请人： Lloyd Michael Spencer , Guy Anthony Brown , Salvatore Primo
设计人： Lloyd Michael Spencer , Guy Anthony Brown , Salvatore Primo

8. 外观设计

USD646857S1 Vacuum cleaner 有权
公开(公告)号：USD646857S1
公开(公告)日：2011-10-11
申请号：US29366948
申请日：2010-08-02
申请人： Lloyd Michael Spencer , Guy Anthony Brown , Salvatore Primo
设计人： Lloyd Michael Spencer , Guy Anthony Brown , Salvatore Primo

9. 发明申请

US20110154203A1 Interactive Advertising Platform and Methods 审中-公开
标题翻译：互动广告平台与方法
公开(公告)号：US20110154203A1
公开(公告)日：2011-06-23
申请号：US12878558
申请日：2010-09-09
申请人： Andrew Michael Spencer , Daniel John Spencer , Scott Christian Reese
发明人： Andrew Michael Spencer , Daniel John Spencer , Scott Christian Reese
IPC分类号： G06F3/01
CPC分类号： G06Q30/02
摘要： A method of providing an entertaining and interactive interface for a user to view a displayable multimedia packet, comprises: obtaining a multimedia packet (“MMP”) relating to a product, service or provider, the MMP having a predesigned progression from beginning to end; obtaining or generating a series of queries relating to the product, service or provider; establishing a series of predetermined elapsed times, based on the MMP's predesigned progression, at which each of the various queries will be presented to the user; associating each of the various queries with one of the predetermined elapsed times; and placing the MMP and the queries into a format presentable to a user to allow the user to view the MMP along with the queries.
摘要翻译：一种向用户提供娱乐和交互界面以查看可显示多媒体分组的方法，包括：获得与产品，服务或提供者相关的多媒体分组（“MMP”），所述多媒体分组（“MMP”）具有从开始到结束的预先设计的进展; 获取或产生与产品，服务或提供者相关的一系列查询; 基于所述MMP的预先设计的进程，建立一系列预定的经过时间，在该过程中将各种查询呈现给用户; 将各种查询中的每一个与预定经过时间之一相关联; 以及将MMP和查询放置成可呈现给用户的格式，以允许用户与查询一起查看MMP。

10. 发明授权

US07705215B1 Methods and compositions for the production of stably transformed, fertile monocot plants and cells thereof 失效
标题翻译：用于生产稳定转化的肥沃单子叶植物及其细胞的方法和组合物
公开(公告)号：US07705215B1
公开(公告)日：2010-04-27
申请号：US08113561
申请日：1993-08-25
申请人： Thomas R. Adams , Paul C. Anderson , Sheryl A. Chambers , Paul S. Chomet , Richard J. Daines , Christopher E. Flick , Kimberly Glassman , William J. Gordon-Kamm , Albert P. Kausch , Lucille B. Laccetti , Peggy G. Lemaux , Catherine J. Mackey , Mary Lou Mangano , Michael T. Mann , James V. O'Brien , Emil M. Orozco , Peter Orr , Thomas B. Rice , T. Michael Spencer , William G. Start , Michael A. Stephens , Clayton S. Vetsch , David A. Walters , Donald S. Walters , Nancy G. Willetts , Susan J. Zachwieja
发明人： Thomas R. Adams , Paul C. Anderson , Sheryl A. Chambers , Paul S. Chomet , Richard J. Daines , Christopher E. Flick , Kimberly Glassman , William J. Gordon-Kamm , Albert P. Kausch , Lucille B. Laccetti , Peggy G. Lemaux , Catherine J. Mackey , Mary Lou Mangano , Michael T. Mann , James V. O'Brien , Emil M. Orozco , Peter Orr , Thomas B. Rice , T. Michael Spencer , William G. Start , Michael A. Stephens , Clayton S. Vetsch , David A. Walters , Donald S. Walters , Nancy G. Willetts , Susan J. Zachwieja
IPC分类号： C12N15/82 , C12N5/04 , A01H5/00 , A01H5/10 , C12N15/53 , C12P7/64
CPC分类号： C12N15/8241 , A01H4/00 , A01H4/001 , C07K14/415 , C12N5/0025 , C12N5/04 , C12N9/0006 , C12N9/88 , C12N15/8207 , C12N15/8209 , C12N15/87
摘要： This invention relates to a reproducible system for the production of stable, genetically transformed maize cells, and to methods of selecting cells that have been transformed. One method of selection disclosed employs the Streptomyces bar gene introduced by microprojectile bombardment into embryogenic maize cells which were grown in suspension cultures, followed by exposure to the herbicide bialaphos. The methods of achieving stable transformation disclosed herein include tissue culture methods and media, methods for the bombardment of recipient cells with the desired transforming DNA, and methods of growing fertile plants from the transformed cells. This invention also relates to the transformed cells and seeds and to the fertile plants grown from the transformed cells and to their pollen.
摘要翻译：本发明涉及用于生产稳定的遗传转化的玉米细胞的可再现系统，以及选择已经转化的细胞的方法。公开的一种选择方法使用通过微粒轰击引入的链霉菌棒基因，其在悬浮培养物中生长，然后暴露于除草剂双乙二胺磷的胚发生玉米细胞中。实现本文公开的稳定转化的方法包括组织培养方法和培养基，用所需转化DNA轰击受体细胞的方法，以及从转化细胞生长可育植物的方法。本发明还涉及转化的细胞和种子以及从转化细胞和其花粉生长的可育植物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式