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    • 1. 发明申请
    • AMORPHOUS CARBON FILM AND METHOD FOR FORMING SAME
    • 非晶碳膜及其形成方法
    • US20140030512A1
    • 2014-01-30
    • US14112885
    • 2012-04-20
    • Kouya OohiraMasaki NakanichiYosuke TaguchiSetsuo Nakao
    • Kouya OohiraMasaki NakanichiYosuke TaguchiSetsuo Nakao
    • C23C14/06
    • C23C14/0605C23C16/26C23C16/515Y10T428/265
    • The present invention provides a film formation method capable of forming a favorable amorphous carbon film under a low vacuum by using a bipolar-type PBII apparatus and the amorphous carbon film to be produced by the film formation method. The film formation method is carried out to form the amorphous carbon film under a low vacuum (1000 to 30000 Pa) by using a power source for the bipolar-type PBII apparatus. There are provided inside a chamber (1) a power source side electrode (3) connected to a power source (6) for the PBII apparatus and a grounding side electrode (4) opposed to the power source side electrode (3). A base material (2) is disposed on one of the power source side electrode (3) and the grounding side electrode (4). Plasma of a noble gas and that of a hydrocarbon-based gas are generated between the base material (2) and the electrode where the base material (2) is not disposed to form the amorphous carbon film on a surface of the base material (2).
    • 本发明提供能够通过使用双极型PBII装置和通过成膜方法制造的无定形碳膜在低真空下形成有利的无定形碳膜的成膜方法。 通过使用双极型PBII装置的电源,进行薄膜形成方法以在低真空(1000〜30000Pa)下形成无定形碳膜。 在室(1)内设有与PBII装置的电源(6)连接的电源侧电极(3)和与电源侧电极(3)相对的接地侧电极(4)。 基材(2)设置在电源侧电极(3)和接地侧电极(4)之一上。 在基材(2)和未设置基材(2)的电极之间产生惰性气体和烃类气体的等离子体,以在基材(2)的表面上形成非晶碳膜 )。