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1. 发明申请

US20100065871A1 POLYMERS WITH TRANSMISSION INTO THE ULTRAVIOLET 审中-公开
标题翻译：聚合物传输到超紫外线
公开(公告)号：US20100065871A1
公开(公告)日：2010-03-18
申请号：US12516631
申请日：2007-11-29
申请人： Richard A. Pethrick , Martin David Dawson , Erdan Gu , Allan R. Mackintosh , Alexander Jan-Christoph Kuehne
发明人： Richard A. Pethrick , Martin David Dawson , Erdan Gu , Allan R. Mackintosh , Alexander Jan-Christoph Kuehne
IPC分类号： H01L33/00 , C08G77/04 , C08F230/08 , C09K11/06 , B05D5/06 , C08J3/28 , C07F7/02
CPC分类号： C08G77/38 , C08F216/125 , C08G59/306 , C08G59/32 , C08G59/3218 , C08G59/68 , C08G65/105 , C08G77/14 , C08G77/20 , C09D183/06 , H01L33/56
摘要： An ultra violet light transmitting polymer is obtainable by the polymerisation of at least one compound having a substantially non UV absorbing core group comprising; linear or branched aliphatic hydrocarbons which may contain an aliphatic ring; or polydialkylsiloxanes. The compounds have at least one functional group comprising formula (A), (B) or (C):and each of the groups —R3— are, independently, linking groups which may be present or absent and, where present, may be a C1 to C10 hydrocarbon chain, which may contain an ether linkage. Methods for producing the polymers and uses for the polymers are also described.
摘要翻译：通过聚合至少一种具有基本上非UV吸收芯组的化合物可以获得紫外光透射聚合物，其包含：可以含有脂族环的直链或支链脂族烃; 或聚二烷基硅氧烷。所述化合物具有至少一个包含式（A），（B）或（C）的官能团：基团-R3-各自独立地为可以存在或不存在的连接基团，并且当存在时可以是 C1至C10烃链，其可以含有醚键。还描述了聚合物的制备方法和用途。

2. 发明授权

US07598149B2 Micro-leds 有权
标题翻译：微型LED
公开(公告)号：US07598149B2
公开(公告)日：2009-10-06
申请号：US10544002
申请日：2004-02-02
申请人： Martin David Dawson , Hoi Wai Choi , Chan-Wook Jeon
发明人： Martin David Dawson , Hoi Wai Choi , Chan-Wook Jeon
IPC分类号： H01L21/331
CPC分类号： H01L33/20 , H01L27/156 , H01L33/24 , H01S5/0213 , H01S5/1075 , H01S5/1085 , H01S5/18352 , H01S5/22 , H01S5/32341 , H01S5/4025 , H01S2301/176
摘要： An array of light emitting devices, each device comprising a sloped wall mesa (24) of luminescent semiconductor material. Extending over the sloped wall mesas (24) is a metal contact (30). The array can be arranged as a parallel addressable system so that all devices (24) can be stimulated to emit light simultaneously. Alternatively, the array can be arranged as a matrix addressable array, in which case individual devices can be selectively stimulated.
摘要翻译：一种发光器件阵列，每个器件包括发光半导体材料的倾斜壁台面（24）。延伸在倾斜壁台面（24）上的是金属接触件（30）。该阵列可以被布置为可并行寻址的系统，使得所有装置（24）都可以被同时发光。或者，阵列可以被布置为矩阵可寻址阵列，在这种情况下可以选择性地刺激各个装置。

3. 发明申请

US20150266741A1 PLASMA ETCHING OF DIAMOND SURFACES 有权
标题翻译：金刚石表面的等离子体蚀刻
公开(公告)号：US20150266741A1
公开(公告)日：2015-09-24
申请号：US14685553
申请日：2015-04-13
申请人： Chee-Leong Lee , Erdan Gu , Geoffrey Alan Scarsbrook , Ian Friel , Martin David Dawson
发明人： Chee-Leong Lee , Erdan Gu , Geoffrey Alan Scarsbrook , Ian Friel , Martin David Dawson
IPC分类号： C01B31/06 , G01N21/95 , G01N21/87 , H01J37/32
CPC分类号： C01B32/28 , C23C16/27 , C23C16/274 , C23C16/278 , C30B25/105 , C30B25/20 , C30B29/04 , G01N21/87 , G01N21/95 , G01N27/308 , G01N2201/0636 , H01J37/321 , H01J2237/08 , H01J2237/3341 , H01L21/02104 , H01L21/02376 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L21/02634 , H01L21/041 , H01L29/045 , H01L29/1602 , H01L29/167 , H01L29/36 , Y10T428/24355
摘要： A polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm2.
摘要翻译：一种多晶CVD金刚石材料，其包含具有小于5nm的表面粗糙度Rq的表面，其中所述表面是损伤自由程度，如果对其施加各向异性热显示蚀刻的程度，通过各向异性热显示揭示的数量密度蚀刻小于100每mm2。

4. 发明申请

US20080043798A1 Vertical-Cavity Semiconductor Optical Devices 审中-公开
标题翻译：垂直腔半导体光学器件
公开(公告)号：US20080043798A1
公开(公告)日：2008-02-21
申请号：US10550846
申请日：2004-03-24
申请人： Stephane Luc Dominique Calvez , John-Mark Hopkins , David Burns , Martin David Dawson , Chan Wook Jeon , Hoi Wai Choi
发明人： Stephane Luc Dominique Calvez , John-Mark Hopkins , David Burns , Martin David Dawson , Chan Wook Jeon , Hoi Wai Choi
IPC分类号： H01S5/026
CPC分类号： H01S5/141 , H01S5/02476 , H01S5/041 , H01S5/18383 , H01S5/18388
摘要： A vertical-cavity device comprises: (a) a chip comprising an active semiconductor layer for providing optical gain; (b) a first mirror arranged on a first side of the active layer; (c) a second mirror arranged on a second side of the active layer, opposite to the first mirror, and forming with at least the first mirror an optically resonant cavity that passes through the active layer in a direction out of the plane of the active layer; (d) a heatspreader for removing heat from the active layer, the heatspreader being arranged inside the cavity and having a first surface adjacent to the chip and a second surface opposite to the first surface, the heatspreader being transparent to light of wavelengths in an operating bandwidth of the device. In addition to removing heat from the active layer, the heatspreader also has one or more further selected property that has a further selected effect on light output from the device.
摘要翻译：垂直腔装置包括：（a）包括用于提供光学增益的有源半导体层的芯片; （b）布置在有源层的第一侧上的第一反射镜; （c）布置在所述有源层的与所述第一反射镜相对的第二侧上的第二反射镜，以及至少形成第一反射镜的光学谐振腔，所述光学谐振腔通过所述有源层的平面外的方向穿过所述有源层层; （d）用于从有源层去除热量的散热器，散热器布置在空腔内并且具有与芯片相邻的第一表面和与第一表面相对的第二表面，散热器对于操作中的波长的光是透明的设备的带宽。除了从活性层除去热之外，散热器还具有一个或多个另外选择的性质，其对来自该装置的光输出具有进一步选择的效果。

5. 发明授权

US06563141B1 Optical devices 有权
标题翻译：光学器件
公开(公告)号：US06563141B1
公开(公告)日：2003-05-13
申请号：US09673177
申请日：2000-11-29
申请人： Martin David Dawson , Robert William Martin
发明人： Martin David Dawson , Robert William Martin
IPC分类号： H01L3300
CPC分类号： H01L33/08 , H01L33/465 , H01S5/041 , H01S5/18361 , H01S5/18369 , H01S5/32341 , H01S5/423
摘要： A solid-state, surface-emitting, optical device such as a light emitting diode (LED) or vertical cavity surface emitting laser (VCSEL) has a body of optical gain medium overlying a high reflectivity distributed BRAGG reflector (DBR) mirror which is carried on part of an underlayer. The gain layer is part of an epitaxial layered structure extending from the underlayer over the mirror.
摘要翻译：诸如发光二极管（LED）或垂直腔表面发射激光器（VCSEL）的固态，表面发射的光学器件具有覆盖高反射率分布式BRAGG反射器（DBR）镜的光学增益介质体，其被携带部分底层。增益层是从镜子上的底层延伸的外延层状结构的一部分。

6. 发明授权

US06193401B1 Optical element 失效
标题翻译：光学元件
公开(公告)号：US06193401B1
公开(公告)日：2001-02-27
申请号：US09367422
申请日：1999-08-30
申请人： John Michael Girkin , Martin David Dawson
发明人： John Michael Girkin , Martin David Dawson
IPC分类号： F21V704
CPC分类号： G02B6/4206 , G02B5/1876 , G02B6/4246 , G02B6/4249 , Y10S385/901
摘要： The light emitted by diodes of the Gallium Nitride type which comprises two distinguishable emissions is controlled by a single optical element (10) in the form of a lens having a central part and an annular part with different optical powers. The total output light of the diode may be collimated or brought to a common focus. The single optical element is preferably injection moulded and the annular part takes the form of a diffraction lens. The first part (12) is preferably a refractive lens which has a different optical power to the second part (14)which is preferably a diffractive lens. The optical power of the refractive lens (12) (the first optical power) and the optical power of the diffractive lens (14) (the second optical power) are selected to match the light source that the lens (10) is to be used with.
摘要翻译：由具有两个可区分发射的氮化镓类型的二极管发出的光由具有中心部分和具有不同光焦度的环形部分的透镜形式的单个光学元件（10）控制。二极管的总输出光可以被准直或被带到共同的焦点。单个光学元件优选地被注射模制，并且环形部分采取衍射透镜的形式。第一部分（12）优选是与第二部分（14）具有不同光学功率的折射透镜，其优选是衍射透镜。选择折射透镜（12）的光焦度（第一光焦度）和衍射透镜（14）的光焦度（第二光焦度）以匹配要使用透镜（10）的光源与。

7. 发明授权

US5903585A Optoelectronic devices 失效
标题翻译：光电器件
公开(公告)号：US5903585A
公开(公告)日：1999-05-11
申请号：US763714
申请日：1996-12-13
申请人： Martin David Dawson , Timothy David Bestwick , Haruhisa Takiguchi
发明人： Martin David Dawson , Timothy David Bestwick , Haruhisa Takiguchi
IPC分类号： H01S3/05 , H01S5/00 , H01S5/02 , H01S5/06 , H01S5/068 , H01S5/183 , H01S5/22 , H01S5/42 , H01S3/19
CPC分类号： H01S5/3201 , H01S5/0612 , H01S5/068 , H01S5/183 , H01S2301/176 , H01S5/0607 , H01S5/423
摘要： A single cavity mode optoelectronic device, such as a VCSEL, an RCLED or a DFB laser diode, comprises an etched-pillar or mesa structure including an optically active region and strain-applying means in the form of a layer of polymer material having a coefficient of thermal expansion which is greater than that of the optically active region. The layer surrounds the optically active region so as to apply a compressive strain to the latter so as to compensate at least partially for temperature-induced changes in the gain spectrum peak of the optically active region caused by ohmic heating of the device.
摘要翻译：诸如VCSEL，RCLED或DFB激光二极管的单腔模式光电子器件包括蚀刻柱或台面结构，其包括具有系数的聚合物材料层形式的光学活性区域和应变施加装置的热膨胀大于光学活性区域的热膨胀。该层围绕光学有源区域，以便向后者施加压缩应变，以便至少部分地补偿由该器件的欧姆加热引起的光学活性区域的增益谱峰的温度引起的变化。

8. 发明授权

US09034200B2 Plasma etching of diamond surfaces 有权
标题翻译：金刚石表面的等离子体蚀刻
公开(公告)号：US09034200B2
公开(公告)日：2015-05-19
申请号：US12523956
申请日：2008-01-22
申请人： Chee-Leong Lee , Erdan Gu , Geoffrey Alan Scarsbrook , Ian Friel , Martin David Dawson
发明人： Chee-Leong Lee , Erdan Gu , Geoffrey Alan Scarsbrook , Ian Friel , Martin David Dawson
IPC分类号： B44C1/22 , C03C25/68 , C03C15/00 , C23F1/00 , C23F3/00 , H01L29/16 , C23C16/27 , C30B25/10 , C30B25/20 , C30B29/04 , G01N27/30 , H01L21/02 , H01L21/04 , H01L29/04 , H01L29/167 , H01L29/36
CPC分类号： C01B32/28 , C23C16/27 , C23C16/274 , C23C16/278 , C30B25/105 , C30B25/20 , C30B29/04 , G01N21/87 , G01N21/95 , G01N27/308 , G01N2201/0636 , H01J37/321 , H01J2237/08 , H01J2237/3341 , H01L21/02104 , H01L21/02376 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L21/02634 , H01L21/041 , H01L29/045 , H01L29/1602 , H01L29/167 , H01L29/36 , Y10T428/24355
摘要： The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.
摘要翻译：本发明涉及一种制造金刚石表面的方法，包括以下步骤：提供原始金刚石表面，使原始金刚石表面进行等离子体蚀刻以从原始表面去除至少2nm的材料并产生等离子体蚀刻表面，蚀刻表面的蚀刻表面的最大深度被去除的位置处的等离子体蚀刻表面的粗糙度Rq满足以下条件中的至少一个：等离子体蚀刻表面的Rq小于原件的Rq的粗糙度的1.5倍等离子体蚀刻表面的表面或Rq小于1nm。

9. 发明授权

US5812577A Surface-emitting laser 失效
标题翻译：表面发射激光
公开(公告)号：US5812577A
公开(公告)日：1998-09-22
申请号：US557694
申请日：1995-11-13
申请人： Martin David Dawson , Timothy David Bestwick , Geoffrey Duggan
发明人： Martin David Dawson , Timothy David Bestwick , Geoffrey Duggan
IPC分类号： H01S5/00 , H01S5/183 , H01S5/20 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/18358 , H01S2301/18 , H01S5/0267 , H01S5/1064 , H01S5/18308 , H01S5/18327 , H01S5/18333 , H01S5/18388 , H01S5/2063 , H01S5/3421 , H01S5/3428
摘要： A surface-emitting laser contains an optical cavity including a multiple quantum well (MQW) active region providing a source of optical emission in use. Top and bottom mirrors are disposed respectively above and below the MQW active region. The MQW active region is profiled so that it has a greater number of quantum wells in a central portion thereof than in a peripheral portion thereof. In alternative embodiments, a current-guiding region is profiled so that it has a first current-guiding portion with a relatively smaller aperture therethrough extending over a central portion of the MQW active region, and a second current-guiding portion with a relatively larger aperture therethrough; and one of the mirrors has a layer structure which, in a central portion of the cross-sectional area of such mirror, is different to that in a peripheral portion of said cross-sectional area.
摘要翻译：表面发射激光器包含光学腔，其包括提供使用中的光发射源的多量子阱（MQW）有源区。顶部和底部反射镜分别设置在MQW有效区域的上方和下方。对MQW有源区进行成形，使得其在其中心部分具有比在其周边部分中更大数量的量子阱。在替代实施例中，电流引导区域被成形为使得其具有第一电流引导部分，其具有穿过MQW有源区域的中心部分延伸的相对较小孔径的第一电流引导部分和具有相对较大孔径的第二电流引导部分通过并且其中一个反射镜具有层结构，该层结构在该反射镜的横截面积的中心部分与所述横截面积的周边部分不同。

10. 发明申请

US20100047519A1 PLASMA ETCHING OF DIAMOND SURFACES 有权
标题翻译：金刚石表面的等离子体蚀刻
公开(公告)号：US20100047519A1
公开(公告)日：2010-02-25
申请号：US12523956
申请日：2008-01-22
申请人： Chee-Leong Lee , Erdan Gu , Geoffrey Alan Scarsbrook , Ian Friel , Martin David Dawson
发明人： Chee-Leong Lee , Erdan Gu , Geoffrey Alan Scarsbrook , Ian Friel , Martin David Dawson
IPC分类号： C01B31/06 , C30B33/12
CPC分类号： C01B32/28 , C23C16/27 , C23C16/274 , C23C16/278 , C30B25/105 , C30B25/20 , C30B29/04 , G01N21/87 , G01N21/95 , G01N27/308 , G01N2201/0636 , H01J37/321 , H01J2237/08 , H01J2237/3341 , H01L21/02104 , H01L21/02376 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L21/02634 , H01L21/041 , H01L29/045 , H01L29/1602 , H01L29/167 , H01L29/36 , Y10T428/24355
摘要： The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.
摘要翻译：本发明涉及一种制造金刚石表面的方法，包括以下步骤：提供原始金刚石表面，使原始金刚石表面进行等离子体蚀刻以从原始表面去除至少2nm的材料并产生等离子体蚀刻表面，蚀刻表面的蚀刻表面的最大深度被去除的位置处的等离子体蚀刻表面的粗糙度Rq满足以下条件中的至少一个：等离子体蚀刻表面的Rq小于原件的Rq的粗糙度的1.5倍等离子体蚀刻表面的表面或Rq小于1nm。

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