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    • 4. 发明授权
    • Spar hull belly strake design and installation method
    • Spar船体腹部设计和安装方法
    • US08783198B2
    • 2014-07-22
    • US13147256
    • 2010-01-28
    • Michael Y. H. LuoLixin ZhangKostas Filoktitis LambrakosVera Mohr
    • Michael Y. H. LuoHarvey O. MohrLixin ZhangKostas Filoktitis Lambrakos
    • F15D1/10
    • B63B1/048B63B35/4406B63B39/005B63B2035/442
    • A spar hull for a floating vessel can include a hard tank having a belly portion, a fixed strake coupled to the outer surface of the tank and a folding strake coupled to the belly portion of the tank, the folding strake having one or more strake panels and one or more support frames. A method for installing folding belly strakes on a spar hull may include providing a floating spar hull having a hard tank with a belly side, rotating the spar so that the belly side is in a first workable position, coupling at least one folding strake to the belly side of the spar, and coupling the strake in a folded position for transport. The method may include positioning the spar hull offshore in a transport position, upending the spar hull, unfolding the strake, fixing the strake in the unfolded position and installing the spar hull.
    • 用于浮动船只的翼梁可以包括具有腹部的硬罐,耦合到罐的外表面的固定板条和耦合到罐的腹部的折叠板,折叠板具有一个或多个板条板 和一个或多个支撑框架。 用于在翼梁上安装折叠式腹板的方法可以包括:提供具有带有腹部侧面的硬罐的浮动翼梁,旋转翼梁使得腹部侧处于第一可操作位置,将至少一个折叠板连接到 翼梁的腹部侧面,并将平台连接在折叠位置以便运输。 该方法可以包括将桨叶船体近海定位在运输位置,从而升高翼梁船体,展开船形板,将船板固定在展开位置并安装翼梁船体。
    • 5. 发明授权
    • Assigning memory to on-chip coherence domains
    • 将内存分配给片上相干域
    • US08612691B2
    • 2013-12-17
    • US13454814
    • 2012-04-24
    • William E. SpeightLixin Zhang
    • William E. SpeightLixin Zhang
    • G06F12/00
    • G06F12/0831
    • A mechanism for assigning memory to on-chip cache coherence domains assigns caches within a processing unit to coherence domains. The mechanism assigns chunks of memory to the coherence domains. The mechanism monitors applications running on cores within the processing unit to identify needs of the applications. The mechanism may then reassign memory chunks to the cache coherence domains based on the needs of the applications running in the coherence domains. When a memory controller receives the cache miss, the memory controller may look up the address in a lookup table that maps memory chunks to cache coherence domains. Snoop requests are sent to caches within the coherence domain. If a cache line is found in a cache within the coherence domain, the cache line is returned to the originating cache by the cache containing the cache line either directly or through the memory controller.
    • 将存储器分配给片上高速缓存一致性域的机制将处理单元内的高速缓存分配给相干域。 该机制将大块内存分配给一致性域。 该机制监视在处理单元内的核心上运行的应用程序,以识别应用程序的需求。 然后,该机制可以基于在相干域中运行的应用的需要将存储器块重新分配给高速缓存一致性域。 当存储器控制器接收高速缓存未命中时,存储器控制器可以查找映射存储器块到高速缓存一致性域的查找表中的地址。 侦听请求被发送到连贯域内的缓存。 如果在相干域内的高速缓存中找到高速缓存行,则通过直接或通过存储器控制器的高速缓存行的高速缓存将高速缓存行返回到始发高速缓存。
    • 6. 发明申请
    • Termination for Superjunction VDMOSFET
    • 超结VDMOSFET的终止
    • US20130069155A1
    • 2013-03-21
    • US13493505
    • 2012-06-11
    • Yangbo YIHaisong LIQin WANGPing TAOLixin ZHANG
    • Yangbo YIHaisong LIQin WANGPing TAOLixin ZHANG
    • H01L29/78
    • H01L29/7811H01L29/0634H01L29/0653H01L29/0696
    • A termination for silicon superjunction VDMOSFET comprises heavily doped N-type silicon substrate which also works as drain region; drain metal is disposed on the back surface of the heavily doped N-type silicon substrate; an N-type silicon epitaxial layer is disposed on the heavily doped N-type silicon substrate; P-type silicon columns and N-type silicon columns are formed in the N-type silicon epitaxial layer, alternately arranged; a continuous silicon oxide layer is disposed on a part of silicon surface in the termination; structures that block the drift of mobile ions (several discontinuous silicon oxide layers arranged at intervals) are disposed on the other part of silicon surface in the termination. The structures that block the drift of mobile ions disposed in the termination region are able to effectively prevent movement of the mobile ions and improve the capability of the power device against the contamination induced by the mobile ions.
    • 硅超结VDMOSFET的终端包括也用作漏极区的重掺杂N型硅衬底; 漏极金属配置在重掺杂N型硅衬底的背表面上; 在重掺杂的N型硅衬底上设置N型硅外延层; 交替布置在N型硅外延层中形成P型硅柱和N型硅柱; 连续的氧化硅层设置在终端的硅表面的一部分上; 阻止移动离子漂移的结构(间隔布置的几个不连续的氧化硅层)设置在终端的硅表面的另一部分上。 阻止设置在终端区域中的移动离子的漂移的结构能够有效地防止移动离子的移动,并提高功率器件抵抗由移动离子引起的污染的能力。
    • 7. 发明授权
    • On-chip networks for flexible three-dimensional chip integration
    • 片上网络为灵活的三维芯片集成
    • US08386690B2
    • 2013-02-26
    • US12617859
    • 2009-11-13
    • Jian LiSteven P. VanderWielLixin Zhang
    • Jian LiSteven P. VanderWielLixin Zhang
    • G06F13/00H01L25/00
    • G06F15/7842
    • Mechanisms for providing an interconnect layer of a three-dimensional integrated circuit device having multiple independent and cooperative on-chip networks are provided. With regard to an apparatus implementing the interconnect layer, such an apparatus comprises a first integrated circuit layer comprising one or more first functional units and an interconnect layer coupled to the first integrated circuit layer. The first integrated circuit layer and interconnect layer are integrated with one another into a single three-dimensional integrated circuit. The interconnect layer comprises a plurality of independent on-chip communication networks that are independently operable and independently able to be powered on and off, each on-chip communication network comprising a plurality of point-to-point communication links coupled together by a plurality of connection points. The one or more first functional units are coupled to a first independent on-chip communication network of the interconnect layer.
    • 提供具有多个独立和协作的片上网络的具有三维集成电路器件的互连层的机构。 关于实现互连层的装置,这种装置包括包含一个或多个第一功能单元和耦合到第一集成电路层的互连层的第一集成电路层。 第一集成电路层和互连层彼此集成为单个三维集成电路。 互连层包括多个独立的片上通信网络,这些独立的片上通信网络是独立可操作的并且独立地能够通电和关断,每个片上通信网络包括多个点对点通信链路,多个点对点通信链路通过多个 连接点。 一个或多个第一功能单元耦合到互连层的第一独立片上通信网络。