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    • 5. 发明授权
    • Single-chip common-drain JFET device and its applications
    • 单片共漏极JFET器件及其应用
    • US07838900B2
    • 2010-11-23
    • US12385718
    • 2009-04-17
    • Liang-Pin TaiJing-Meng LiuHung-Der Su
    • Liang-Pin TaiJing-Meng LiuHung-Der Su
    • H01L29/74H01L31/111
    • H01L27/098H01L27/0744H01L29/7722H01L29/8083
    • A single-chip common-drain JFET device comprises a Drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.
    • 单芯片公共漏极JFET器件包括漏极,两个栅极和两个源极,使得与其形成两个公共漏极JFET。 由于在单个芯片内合并的两个JFET,其间不需要引线接合连接,因此没有由接合线引起的寄生电感和电阻,因此提高性能并降低封装成本。 单片式公共漏极JFET器件可以应用于降压转换器,升压转换器,反相转换器,开关和两级DC-DC转换器,以提高其性能和效率。 还提供了用于电流感测或比例电流产生的替代单芯片公共漏极JFET器件。