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    • 1. 发明申请
    • SAW TRANSPONDER FOR SENSING PRESSURE
    • 用于传感压力的SAW传感器
    • US20110057540A1
    • 2011-03-10
    • US12298767
    • 2007-04-27
    • Bum Kyoo ChoiDu-Hwan Choi
    • Bum Kyoo ChoiDu-Hwan Choi
    • H03H9/64
    • G01L9/0025H03H9/6406
    • The present invention relates to a surface acoustic wave (SAW) transponder for sensing pressure, and more particularly, to a SAW transponder for sensing pressure, in which a pressure sensor is connected to a SAW transponder receiving an applied radio frequency (RF) signal to generate a surface acoustic wave (SAW) and which can detect a change of a pressure through an amplitude change of a SAW. According to the present invention, a structure of a surface acoustic wave (SAW) transponder for sensing pressure is improved, and thus the change of an external pressure can be effectively detected. In addition, since the variations of the external pressure and the pressure sensor have a linear relationship with each other, the change of the external can be easily and quantitatively detected, and an external transmit/receive device can easily analyze a pressure signal.
    • 本发明涉及用于感测压力的表面声波(SAW)应答器,更具体地,涉及用于感测压力的SAW应答器,其中压力传感器连接到接收施加的射频(RF)信号的SAW应答器 产生表面声波(SAW),并且可以通过SAW的幅度变化来检测压力的变化。 根据本发明,提高了用于感测压力的表面声波(SAW)应答器的结构,从而可以有效地检测外部压力的变化。 此外,由于外部压力和压力传感器的变化彼此具有线性关系,因此可以容易且定量地检测外部变化,并且外部的发送/接收装置可以容易地分析压力信号。
    • 2. 发明申请
    • Method for Fabricating Extreme Ultraviolet Lithography Mask
    • 制造极紫外光刻面膜的方法
    • US20090317728A1
    • 2009-12-24
    • US12346948
    • 2008-12-31
    • Sung Hyun OhYong Kyoo Choi
    • Sung Hyun OhYong Kyoo Choi
    • G03F1/00
    • G03F1/24B82Y10/00B82Y40/00
    • A method for fabricating an extreme ultraviolet (EUV) lithography mask comprises forming a reflecting layer, an absorber layer, and a resist layer over a substrate; defining a plurality of split regions by partially splitting the resist layer with regular spacing; performing an exposure process, wherein the exposure region is irradiated with an electron beam at different intensities on the split regions to generate a difference in electron beam doses implanted into the resist layer; forming a resist layer pattern which selectively exposes the absorber layer and has a slanted side wall profile by performing a development process to remove a portion of the resist layer, into which the electron beam doses are implanted; and forming an absorber layer pattern with a slanted side wall profile by sequentially etching the portion of the absorber layer exposed by the resist layer pattern.
    • 一种用于制造极紫外(EUV)光刻掩模的方法,包括在衬底上形成反射层,吸收层和抗蚀剂层; 通过以规则间隔部分地分离抗蚀剂层来限定多个分裂区域; 进行曝光处理,其中在分割区域上用不同强度的电子束照射曝光区域,以产生注入到抗蚀剂层中的电子束剂量的差异; 形成通过进行显影处理以选择性地暴露吸收层并具有倾斜的侧壁轮廓的抗蚀剂层图案,以去除其中注入电子束剂量的抗蚀剂层的一部分; 以及通过依次蚀刻由抗蚀剂层图案暴露的吸收层的部分,形成具有倾斜侧壁轮廓的吸收层图案。
    • 4. 发明授权
    • Artificial nephron device
    • 人造肾单位
    • US09072593B2
    • 2015-07-07
    • US13812487
    • 2010-12-24
    • Bum Kyoo ChoiSeung Joon Lee
    • Bum Kyoo ChoiSeung Joon Lee
    • A61F2/04B01D61/00A61M1/14A61M1/34
    • A61F2/04A61M1/14A61M1/34A61M1/3406
    • The present invention relates to an artificial nephron device. The artificial nephron device comprising a multi micro channel in which while blood containing waste and water are passing therethrough the waste is separated so as to purify the blood and the separated waste is concentrated into the water to be discharged, wherein the multi micro channel comprises a glomerulus micro channel simulating a Glomerulus, a tubule micro channel simulating a Tubule, and a Henle's loop micro channel simulating a Henle's loop. According to the present invention, the device can be made smaller and can be optimized, and an artificial kidney of high efficiency can be made by the series or parallel combination of the devices, so the demand for a portable artificial kidney and the domiciliary hemodialysis system can be increased and life quality of patients suffering from chronic renal insufficiency can be improved.
    • 本发明涉及一种人造肾单位装置。 所述人造肾单元包括多微通道,其中当血液中含有废物和水通过所述废物时,所述废物被分离以净化所述血液,并且所分离的废物被浓缩到要排出的水中,其中所述多微通道包括 模拟小球的肾小球微通道,模拟Tubule的小管微通道,以及模拟Henle循环的Henle循环微通道。 根据本发明,可以使装置更小,并且可以优化,并且可以通过装置的串联或并联组合来制造高效率的人造肾,因此对便携式人造肾和家庭血液透析系统的需求 可以提高患者的慢性肾功能不全患者的生活质量。
    • 5. 发明授权
    • Fabrication method of mask for semiconductor device
    • 半导体器件掩模的制造方法
    • US6080514A
    • 2000-06-27
    • US166968
    • 1998-10-06
    • Yong-Kyoo Choi
    • Yong-Kyoo Choi
    • G03F1/20G03F1/22H01L21/02H01L21/027H01L21/033G03F9/00
    • H01L21/0331H01L21/0272H01L21/0332
    • A fabrication method of a mask for a semiconductor device includes the steps of: applying a first photoresist film on a silicone wafer; sequentially stacking a first insulation film, a second insulation film, and a second photoresist film on the first photoresist film; patterning the second photoresist film by an etching process; etching and patterning the first and second insulation films by using the patterned second photoresist film as a mask; etching and patterning the first photoresist film by using the patterned first and second insulation films, and patterned second photoresist film as a mask; removing the second photoresist film; etching a predetermined portion of the patterned first insulation film; depositing a metal on the wafer including the first photoresist film, the first insulation film having the predetermined etched portion, and the second insulation film; and removing the first photoresist film, and first and second insulation films from the wafer. Since a sidewall of the photoresist film has a predetermined portion on which the metal is not deposited and thus the metal is separately formed on an upper surface of the photoresist film and on the wafer when depositing the metal, the present invention is capable of removing the metal on the upper surface of the photoresist film by being separated from the metal formed on the wafer.
    • 半导体器件掩模的制造方法包括以下步骤:在硅晶片上施加第一光致抗蚀剂膜; 在第一光致抗蚀剂膜上依次堆叠第一绝缘膜,第二绝缘膜和第二光致抗蚀剂膜; 通过蚀刻工艺图案化第二光致抗蚀剂膜; 通过使用图案化的第二光致抗蚀剂膜作为掩模来蚀刻和图案化第一和第二绝缘膜; 通过使用图案化的第一和第二绝缘膜蚀刻和图案化第一光致抗蚀剂膜,以及图案化的第二光致抗蚀剂膜作为掩模; 去除第二光致抗蚀剂膜; 蚀刻图案化的第一绝缘膜的预定部分; 在包括第一光致抗蚀剂膜的晶片上沉积金属,具有预定蚀刻部分的第一绝缘膜和第二绝缘膜; 以及从晶片去除第一光致抗蚀剂膜以及第一和第二绝缘膜。 由于光致抗蚀剂膜的侧壁具有不沉积金属的预定部分,因此在沉积金属时在光致抗蚀剂膜的上表面和晶片上分开形成金属,本发明能够除去 通过与形成在晶片上的金属分离而在光致抗蚀剂膜的上表面上的金属。
    • 9. 发明授权
    • Method for fabricating phase shift mask comprising the use of a second
photoshield layer as a sidewall
    • 用于制造相移掩模的方法,其包括使用第二光致遮蔽层作为侧壁
    • US5658695A
    • 1997-08-19
    • US463244
    • 1995-06-05
    • Yong Kyoo Choi
    • Yong Kyoo Choi
    • H01L21/027G03F1/00G03F1/26G03F1/30G03F9/00
    • G03F1/30G03F1/26G03F1/36
    • A method is provided for fabricating a phase shift mask of the out rigger sub-resolution type capable of accurately fabricating an ultra-fine semiconductor circuit. The method includes the steps of depositing a first photoshield metal layer and a first phase shift material layer over a transparent substrate, defining a transmission region for forming an actual pattern and a sub-pattern region for the transmission region, and removing portions of the photoshield metal layer and phase shift material layer disposed at the defined regions, depositing a second phase shift material layer over the resulting structure, and selectively etching back the second phase shift material layer to form phase shift material side walls, depositing over the resulting structure a photoresist film, and etching back the optional material layer such that both the first and second phase shift material layers are sufficiently exposed at their upper surfaces, etching back the first and second phase shift material layers such that they are flush with the first photoshield metal layer to form a phase shift layer at the sub-pattern region, and depositing a second photoshield material layer over the resulting structure, and etching back the second photoshield material layer to form second photoshield material side walls on the phase shift layer side walls.
    • 提供了一种用于制造能够精确地制造超精细半导体电路的输出装置子分解型的相移掩模的方法。 该方法包括以下步骤:在透明基板上沉积第一照相场金属层和第一相移材料层,限定用于形成实际图案的透射区域和用于透射区域的子图案区域,以及去除光罩的部分 金属层和相移材料层设置在限定的区域上,在所得结构上沉积第二相移材料层,并且选择性地回蚀第二相移材料层以形成相移材料侧壁,在所得结构上沉积光致抗蚀剂 膜,并且蚀刻回可选材料层,使得第一相移材料层和第二相移材料层在其上表面充分暴露,对第一和第二相移材料层进行回蚀,使得它们与第一照相场金属层齐平, 在子图案区域形成相移层,并沉积第二个遮光罩ma 在所得到的结构上方,并且蚀刻回第二照片保护层材料层,以在相移层侧壁上形成第二遮光材料侧壁。
    • 10. 发明申请
    • ARTIFICIAL NEPHRON DEVICE
    • 人造尼泊尔装置
    • US20130123936A1
    • 2013-05-16
    • US13812487
    • 2010-12-24
    • Bum Kyoo ChoiSeung Joon Lee
    • Bum Kyoo ChoiSeung Joon Lee
    • A61F2/04
    • A61F2/04A61M1/14A61M1/34A61M1/3406
    • The present invention relates to an artificial nephron device. The artificial nephron device comprising a multi micro channel in which while blood containing waste and water are passing therethrough the waste is separated so as to purify the blood and the separated waste is concentrated into the water to be discharged, wherein the multi micro channel comprises a glomerulus micro channel simulating a Glomerulus, a tubule micro channel simulating a Tubule, and a Henle's loop micro channel simulating a Henle's loop. According to the present invention, the device can be made smaller and can be optimized, and an artificial kidney of high efficiency can be made by the series or parallel combination of the devices, so the demand for a portable artificial kidney and the domiciliary hemodialysis system can be increased and life quality of patients suffering from chronic renal insufficiency can be improved.
    • 本发明涉及一种人造肾单位装置。 所述人造肾单元包括多微通道,其中当血液中含有废物和水通过所述废物时,所述废物被分离以净化所述血液,并且所分离的废物被浓缩到要排出的水中,其中所述多微通道包括 模拟小球的肾小球微通道,模拟Tubule的小管微通道,以及模拟Henle循环的Henle循环微通道。 根据本发明,可以使装置更小,并且可以优化,并且可以通过装置的串联或并联组合来制造高效率的人造肾,因此对便携式人造肾和家庭血液透析系统的需求 可以提高患者的慢性肾功能不全患者的生活质量。