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1. 发明授权

US08980049B2 Apparatus for supporting substrate and plasma etching apparatus having the same 有权
标题翻译：用于支撑基板的等离子体蚀刻装置
公开(公告)号：US08980049B2
公开(公告)日：2015-03-17
申请号：US12531068
申请日：2008-04-01
申请人： Won Haeng Lee , Kwan Goo Rha , Jung Hee Lee , Chul Hee Jang , Hyang Joo Lee , Dong Wan Kim
发明人： Won Haeng Lee , Kwan Goo Rha , Jung Hee Lee , Chul Hee Jang , Hyang Joo Lee , Dong Wan Kim
IPC分类号： C23C16/00 , H01L21/306 , H01L21/67 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67069 , H01L21/6831 , H01L21/68742
摘要： Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.
摘要翻译：提供了一种基板支撑装置和具有该基板支撑装置的等离子体蚀刻装置。提供了一种基板支撑装置，其可以通过在基板支撑装置的中心区域设置支撑基板的电极，并且在该基板支撑装置的中心区域设置接收射频（RF）电力的电极，边缘区域。提供了一种基板边缘蚀刻装置，其具有用于去除沉积在半导体基板的边缘区域中的层或颗粒的基板支撑装置，并且防止在基板边缘的蚀刻处理期间对半导体基板的中心区域的损坏。

2. 发明授权

US06291850B1 Structure of cylindrical capacitor electrode with layer of hemispherical grain silicon 有权
标题翻译：具有半球形晶粒硅层的圆柱形电容器电极的结构
公开(公告)号：US06291850B1
公开(公告)日：2001-09-18
申请号：US09435366
申请日：1999-11-08
申请人： Byung Jae Choi , Kwan Goo Rha , Hong Seok Kim , Jae Young An
发明人： Byung Jae Choi , Kwan Goo Rha , Hong Seok Kim , Jae Young An
IPC分类号： H01L27108
CPC分类号： H01L28/84 , H01L27/10852 , H01L28/75 , H01L28/91
摘要： A structure of a lower electrode of a capacitor includes a first lower electrode, second lower electrodes formed at both sides of the first lower electrode and electrically connected to and higher than the first lower electrode, and a Hemispherical Grain-Silicon (HSG-Si) layer formed on a top surface of the first lower electrode and inside walls of the second lower electrodes.
摘要翻译：电容器的下电极的结构包括：第一下电极，形成在第一下电极的两侧并与第一下电极电连接并高于第一下电极的第二下电极，以及半球晶格硅（HSG-Si）层形成在第一下电极的顶表面和第二下电极的内壁上。

3. 外观设计

USD664459S1 Chip for biochemical assay 有权
标题翻译：芯片用于生化测定
公开(公告)号：USD664459S1
公开(公告)日：2012-07-31
申请号：US29375625
申请日：2010-09-24
申请人： Kwan Goo Rha
设计人： Kwan Goo Rha

4. 发明授权

US06376893B1 Trench isolation structure and fabrication method thereof 有权
标题翻译：沟槽隔离结构及其制造方法
公开(公告)号：US06376893B1
公开(公告)日：2002-04-23
申请号：US09638866
申请日：2000-08-15
申请人： Kwan Goo Rha
发明人： Kwan Goo Rha
IPC分类号： H01L21764
CPC分类号： H01L21/764 , H01L21/76229 , H01L21/76232
摘要： Trench isolation structure includes a first conformal insulating film (preferably consisting of silicon nitride) which lines a trench etched in a silicon substrate, an insulating layer (preferably consisting of silicon dioxide) which caps the lined trench and thereby forms a cavity, and a gas (preferably consisting of carbon dioxide) within the cavity. Fabrication of the trench isolation structure is begun by depositing a first conformal insulating film onto the surface of a trench etched in a silicon substrate, thereby forming a lined trench. An amorphous carbon layer is deposited within the lined trench and the lined trench is capped by an insulating layer which encloses the amorphous carbon within a cavity. The solid amorphous carbon within the cavity is converted to carbon dioxide gas by annealing the substrate in an oxidizing ambient. Planarizing the insulating layer to the level of the substrate completes fabrication of the trench isolation structure.
摘要翻译：沟槽隔离结构包括第一共形绝缘膜（优选由氮化硅组成），其对在硅衬底中蚀刻的沟槽进行排列，绝缘层（优选由二氧化硅组成），其封盖衬里的沟槽并由此形成空腔，并且气体（优选由二氧化碳组成）。通过在蚀刻在硅衬底中的沟槽的表面上沉积第一保形绝缘膜开始制造沟槽隔离结构，由此形成衬里的沟槽。在衬里的沟槽内沉积无定形碳层，并且衬里的沟槽被封闭在空腔内的无定形碳的绝缘层封盖。空腔内的固体无定形碳通过在氧化环境中退火衬底而转化为二氧化碳气体。将绝缘层平坦化到衬底的层面完成了沟槽隔离结构的制造。

5. 发明授权

US6127241A Trench isolation structure and fabrication method thereof 有权
标题翻译：沟槽隔离结构及其制造方法
公开(公告)号：US6127241A
公开(公告)日：2000-10-03
申请号：US195558
申请日：1998-11-19
申请人： Kwan Goo Rha
发明人： Kwan Goo Rha
IPC分类号： H01L21/22 , H01L21/265 , H01L21/336 , H01L21/762 , H01L29/786 , H01L21/764
CPC分类号： H01L29/66772 , H01L21/76264 , H01L29/78612 , H01L29/78654 , H01L21/26506 , H01L21/76267 , H01L21/76283 , H01L29/66545
摘要： Trench isolation structure includes a first conformal insulating film (preferably consisting of silicon nitride) which lines a trench etched in a silicon substrate, an insulating layer (preferably consisting of silicon dioxide) which caps the lines trench and thereby forms a cavity, and a gas (preferably consisting of carbon dioxide) within the cavity. Fabrication of the trench isolation structure is begun by depositing a first conformal insulating film onto the surface of a trench etched in a silicon substrate, thereby forming a lined trench. An amorphous carbon layer is deposited within the lined trench and the lined trench is capped by an insulating layer which encloses the amorphous carbon within a cavity. The solid amorphous carbon within the cavity is converted to carbon dioxide gas by annealing the substrate in an oxidizing ambient. Planarizing the insulating layer to the level of the substrate completes fabrication of the trench isolation structure.
摘要翻译：沟槽隔离结构包括在硅衬底中蚀刻的沟槽的第一共形绝缘膜（优选由氮化硅组成），覆盖线沟槽并由此形成空腔的绝缘层（优选由二氧化硅组成）（优选由二氧化碳组成）。通过在蚀刻在硅衬底中的沟槽的表面上沉积第一保形绝缘膜开始制造沟槽隔离结构，从而形成衬里的沟槽。在衬里的沟槽内沉积无定形碳层，并且衬里的沟槽被封闭在空腔内的无定形碳的绝缘层封盖。空腔内的固体无定形碳通过在氧化环境中退火衬底而转化为二氧化碳气体。将绝缘层平坦化到衬底的层面完成了沟槽隔离结构的制造。

6. 发明授权

US08888950B2 Apparatus for plasma processing and method for plasma processing 有权
标题翻译：等离子体处理装置及等离子体处理方法
公开(公告)号：US08888950B2
公开(公告)日：2014-11-18
申请号：US12528326
申请日：2008-03-13
申请人： Kyung Ho Lee , Jae Ho Guahk , Jae Chul Choi , Young Ki Han , Hee Se Lee , Yong Hwan Lim , Kwan Goo Rha , Seng Hyun Chung , Sun Q Jeon , Jung Hee Lee
发明人： Kyung Ho Lee , Jae Ho Guahk , Jae Chul Choi , Young Ki Han , Hee Se Lee , Yong Hwan Lim , Kwan Goo Rha , Seng Hyun Chung , Sun Q Jeon , Jung Hee Lee
IPC分类号： C23F1/00 , H01L21/306 , H01L21/687 , H01J37/32 , H01L21/67 , H01L21/02
CPC分类号： H01L21/67069 , H01J37/32431 , H01J2237/20 , H01L21/0209 , H01L21/68735 , H01L21/68742
摘要： There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.
摘要翻译：提供了一种能够可靠地支撑诸如其上形成有预定薄膜图案的装置的基板的基板的基板支撑件，以去除形成在基板的后表面上的各种杂质，以及具有该基板的等离子体处理装置。等离子体处理装置包括：至少一个臂; 以及从臂朝向基板的基板安置位置延伸的支撑部，使得与常规干蚀刻相比，等离子体处理装置可以减少电弧放电的可能性，以提高工艺成品率和产品可靠性，并且确保基板的稳定安装。

7. 发明申请

US20100096084A1 APPARATUS FOR SUPPORTING SUBSTRATE AND PLASMA ETCHING APPARATUS HAVING THE SAME 有权
标题翻译：支持基板和等离子体蚀刻装置的装置
公开(公告)号：US20100096084A1
公开(公告)日：2010-04-22
申请号：US12531068
申请日：2008-04-01
申请人： Won Haeng Lee , Kwan Goo Rha , Jung Hee Lee , Chul Hee Jang , Hyang Joo Lee , Dong Wan Kim
发明人： Won Haeng Lee , Kwan Goo Rha , Jung Hee Lee , Chul Hee Jang , Hyang Joo Lee , Dong Wan Kim
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01L21/6831 , H01L21/68742
摘要： Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.
摘要翻译：提供了一种基板支撑装置和具有该基板支撑装置的等离子体蚀刻装置。提供了一种基板支撑装置，其可以通过在基板支撑装置的中心区域设置支撑基板的电极，并且在该基板支撑装置的中心区域设置接收射频（RF）电力的电极，边缘区域。提供了一种基板边缘蚀刻装置，其具有用于去除沉积在半导体基板的边缘区域中的层或颗粒的基板支撑装置，并且防止在基板边缘的蚀刻处理期间对半导体基板的中心区域的损坏。

8. 发明申请

US20100059478A1 APPARATUS FOR PLASMA PROCESSING AND METHOD FOR PLASMA PROCESSING 有权
标题翻译：用于等离子体处理的装置和等离子体处理方法
公开(公告)号：US20100059478A1
公开(公告)日：2010-03-11
申请号：US12528326
申请日：2008-03-13
申请人： Kyung Ho Lee , Jae Ho Guahk , Jae Choi , Young Ki Han , Hee Se Lee , Yong Hwan Lim , Kwan Goo Rha , Seng Hyun Chung , Sun Q Jeon , Jung Hee Lee
发明人： Kyung Ho Lee , Jae Ho Guahk , Jae Choi , Young Ki Han , Hee Se Lee , Yong Hwan Lim , Kwan Goo Rha , Seng Hyun Chung , Sun Q Jeon , Jung Hee Lee
IPC分类号： H01L21/3065 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32431 , H01J2237/20 , H01L21/0209 , H01L21/68735 , H01L21/68742
摘要： There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.
摘要翻译：提供了一种能够可靠地支撑诸如其上形成有预定薄膜图案的装置的基板的基板的基板支撑件，以去除形成在基板的后表面上的各种杂质，以及具有该基板的等离子体处理装置。等离子体处理装置包括：至少一个臂; 以及从臂朝向基板的基板安置位置延伸的支撑部，使得与常规干蚀刻相比，等离子体处理装置可以减少电弧放电的可能性，以提高工艺成品率和产品可靠性，并且确保基板的稳定安装。

9. 外观设计

USD647412S1 Biochemical analyzer 有权
公开(公告)号：USD647412S1
公开(公告)日：2011-10-25
申请号：US29375621
申请日：2010-09-24
申请人： Kwan Goo Rha
设计人： Kwan Goo Rha

10. 发明申请

US20130200437A1 METHOD OF FORMING NANOGAP PATTERN, BIOSENSOR HAVING THE NANOGAP PATTERN, AND METHOD OF MANUFACTURING THE BIOSENSOR 审中-公开
标题翻译：形成纳米图案的方法，具有纳米图案的生物传感器和制造传感器的方法
公开(公告)号：US20130200437A1
公开(公告)日：2013-08-08
申请号：US13824367
申请日：2011-10-18
申请人： Kwan Goo Rha
发明人： Kwan Goo Rha
IPC分类号： H01L21/306 , H01L29/66 , G01N27/414
CPC分类号： H01L21/30604 , G01N27/4146 , H01L29/66409
摘要： Provided is a method of forming a nanogap pattern of a biosensor. First, an oxide layer is formed on a substrate and a first nitride layer is formed on the oxide layer. The first nitride layer is partially etched to form a first nitride layer pattern having a first gap that gradually narrows from a top portion to a bottom portion thereof and exposes the oxide layer. A second nitride layer is formed along the first nitride layer and along sidewalls and a bottom surface of the first gap. The second nitride layer is etched to form a second nitride layer pattern having a second gap narrower than the first gap on the sidewalls of the first gap. The oxide layer is etched by using the second nitride layer pattern as an etching mask to form an oxide layer pattern having a third gap, and thus, the nanogap pattern is completed.
摘要翻译：提供一种形成生物传感器的纳米斑图案的方法。首先，在基板上形成氧化物层，在氧化物层上形成第一氮化物层。第一氮化物层被部分蚀刻以形成第一氮化物层图案，其具有从顶部到底部逐渐变窄的第一间隙，并暴露氧化物层。沿着第一氮化物层并且沿着第一间隙的侧壁和底表面形成第二氮化物层。蚀刻第二氮化物层以形成具有比第一间隙的侧壁上的第一间隙窄的第二间隙的第二氮化物层图案。通过使用第二氮化物层图案作为蚀刻掩模来蚀刻氧化物层，以形成具有第三间隙的氧化物层图案，从而完成纳米图案。

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