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    • 6. 发明申请
    • BATTERY AND MANUFACTURING METHOD THEREOF
    • 电池及其制造方法
    • US20130004815A1
    • 2013-01-03
    • US13583076
    • 2010-03-15
    • Koji Kawamoto
    • Koji Kawamoto
    • H01M4/70H01M10/04
    • H01M2/26H01M10/052H01M10/0583H01M10/0585H01M10/0587Y02T10/7011Y10T29/49108
    • A battery includes a plurality of power generating elements each including: a cathode layer; an anode layer; an electrolyte layer disposed between the cathode layer and the anode layer; a cathode current collector connected to the cathode layer; and an anode current collector connected to the anode layer, wherein the plurality of power generating elements are wound or folded; and the cathode current collector included in one of the power generating elements and the anode current collector included in another power generating element adjacent to that power generating element are directly or indirectly connected to each other in the entire longitudinal direction of the cathode current collector and the anode current collector before and after the power generating elements are wound or folded.
    • 电池包括多个发电元件,每个发电元件包括​​:阴极层; 阳极层; 设置在所述阴极层和所述阳极层之间的电解质层; 连接到阴极层的阴极集电器; 以及连接到所述阳极层的阳极集电体,其中所述多个发电元件被卷绕或折叠; 包含在与该发电元件相邻的另一发电元件中的发电元件和负极集电体之一的阴极集电体的阴极集电体在阴极集电体的整个长度方向上彼此直接或间接连接, 发电元件卷绕或折叠之前和之后的阳极集电器。
    • 10. 发明授权
    • Semiconductor circuit having turn-on prevention capability of switching
semiconductor device during off cycle thereof by undesired transient
voltages
    • 半导体电路具有通过不期望的瞬态电压在其关断周期期间切换半导体器件的接通防止能力
    • US5818281A
    • 1998-10-06
    • US528887
    • 1995-09-15
    • Hitoshi OhuraKoji KawamotoShoichi Ozeki
    • Hitoshi OhuraKoji KawamotoShoichi Ozeki
    • H02M7/537H02M1/08H03K17/00H03K17/082H03K17/16H03K17/56
    • H02M7/538H03K17/0828H03K2217/0036
    • For a semiconductor circuit having one or more semiconductor devices, such as an IGBT, a turn-ON prevention circuit is provided for each device which prevents the device from turning ON during OFF times thereof, due to the presence of a transient voltage (dV/dt) across the main terminals of the device. In accordance with such a scheme, a MOSFET is connected between the insulated-gate electrode and emitter of the IGBT, and a capacitor, for example, is connected between the gate of the MOSFET and a sufficient electric potential to thereby effect a temporary turn-ON of the MOSFET to remove parasitic charge build-up in the IGBT before such charge build-up has reached a potential of the turn-ON threshold of the IGBT during OFF times of the IGBT. The capacitance element can be constituted by a MOSFET, namely, the capacitance across the gate-to-drain of an additional MOSFET. As a result, therefore, power consumption can be kept sufficiently small and the chip area required for implementing the circuit, such as, in a monolithic construction can be reduced. Further, the turn-ON prevention scheme can be applied to MOSFET devices rather than IGBTs.
    • 对于具有一个或多个半导体器件(例如IGBT)的半导体电路,由于存在瞬态电压(dV / V),每个器件提供导通保护电路,以防止器件在其OFF时间期间导通, dt)跨越器件的主端子。 根据这种方案,MOSFET连接在IGBT的绝缘栅电极和发射极之间,并且电容器例如连接在MOSFET的栅极和足够的电势之间,从而实现暂时的转换, 在IGBT的截止时间之前,这种电荷积聚已经达到IGBT的导通阈值的电位,从而去除MOSFET中的寄生电荷积聚。 电容元件可以由MOSFET构成,即额外MOSFET的栅极到漏极之间的电容。 因此,因此能够将功耗保持在足够小,并且可以减少实现电路所需的芯片面积,例如在单片结构中。 此外,导通保护方案可以应用于MOSFET器件而不是IGBT。