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1. 发明申请

US20100270057A1 CIRCUIT BOARD AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：电路板及其制造方法
公开(公告)号：US20100270057A1
公开(公告)日：2010-10-28
申请号：US12525967
申请日：2008-02-27
申请人： Hiroshi Yanagimoto , Takeshi Bessho , Hidemi Nawafune , Kensuke Akamatsu
发明人： Hiroshi Yanagimoto , Takeshi Bessho , Hidemi Nawafune , Kensuke Akamatsu
IPC分类号： H05K1/00 , H05K3/10 , H05K3/46
CPC分类号： H05K3/107 , H05K3/20 , H05K3/207 , H05K3/246 , H05K2201/0347 , H05K2201/09736 , H05K2203/0108 , Y10T29/49117 , Y10T29/49155 , Y10T29/49156 , Y10T29/49158
摘要： According to the present invention, a circuit board having a further-microfabricated circuit pattern that can be manufactured in further simplified steps is obtained. For such purpose, a mold 10, which has protrusions 11 formed in a pattern corresponding to a circuit pattern, is used to apply a conductive material layer (metal paste) 13 to head portions of the protrusions 11 of the mold 10. The mold is heat- and pressure-welded to the surface of a substrate 20 that is made of a resin film or the like. Accordingly, a pattern comprising the protrusions 11 and the conductive material layer (metal paste) 13 are transferred to the substrate 20. After transfer, the resin substrate (resin molding 30) is immersed in a copper sulfate plating bath for electrolytic plating treatment. Copper ions in the plating bath were deposited inside each recess 31 while the conductive material layer 13 is used as a base material for the formation of a metal wiring 32. A pattern of the recesses 31 transferred to the substrate-20 side is determined depending on a pattern comprising the protrusions 11 on the mold 10. Thus, a microfabricated high-density circuit pattern formed with metal wirings 32 having arbitrary aspect ratios can be obtained.
摘要翻译：根据本发明，可以获得可以进一步简化的步骤制造的具有更微细加工电路图案的电路板。为此目的，使用具有与电路图案相对应的图案形成的突起11的模具10，将导电材料层（金属糊）13施加到模具10的突起11的头部。模具为热压并且被压焊到由树脂膜等制成的基板20的表面上。因此，将包括突起11和导电材料层（金属膏）13的图案转印到基板20上。转印后，将树脂基板（树脂成型体30）浸渍在用于电解电镀处理的硫酸铜电镀浴中。将电镀液中的铜离子沉积在每个凹部31内，同时使用导电材料层13作为形成金属布线32的基材。转移到基板20侧的凹部31的图案根据在模具10上包括突起11的图案。因此，可以获得由具有任意长宽比的金属布线32形成的微细加工的高密度电路图案。

2. 发明申请

US20060159854A1 Method for forming inorganic thin film on polyimide resin and method for producing polyimide resin having reformed surface for forming inorganic thin film 审中-公开
标题翻译：在聚酰亚胺树脂上形成无机薄膜的方法和具有用于形成无机薄膜的重整表面的聚酰亚胺树脂的制造方法
公开(公告)号：US20060159854A1
公开(公告)日：2006-07-20
申请号：US11296228
申请日：2005-12-08
申请人： Hiroshi Yanagimoto , Hidemi Nawafune , Kensuke Akamatsu
发明人： Hiroshi Yanagimoto , Hidemi Nawafune , Kensuke Akamatsu
IPC分类号： B05D1/40 , B05D5/00 , B05D1/36 , B05D5/12
CPC分类号： C23C18/08 , C23C18/04 , C23C18/06 , C23C18/1216 , C23C18/1279 , C23C18/1641 , C23C18/1658 , C23C18/2006 , C23C18/206 , C23C18/2086 , H05K1/0346 , H05K3/107 , H05K3/182 , H05K3/381 , H05K2201/0154 , H05K2203/013 , H05K2203/0783 , H05K2203/0793 , H05K2203/1157
摘要： The present invention provides a method for forming an inorganic thin film on a polyimide resin, which includes: (1) a step of applying an alkaline aqueous solution on a polyimide resin at the site where an inorganic thin film is formed to cleave an imide ring of the polyimide resin so as to produce a carboxyl group and to reform the polyimide resin to a polyamic acid whereby a reformed portion including the polyamic acid having the carboxyl group is formed; (2) a step of contacting a solvent in which the polyamic acid is soluble to the reformed portion to remove a part of the reformed portion so as to form a concave part; (3) a step of contacting a solution containing a metal ion to the reformed portion, which is near the concave part, so as to produce a metal salt of the carboxyl group; and (4) a step of separating the metal salt as a metal, a metal oxide or a semiconductor on the surface of the polyimide resin so as to form the inorganic thin film.
摘要翻译：本发明提供了一种在聚酰亚胺树脂上形成无机薄膜的方法，其包括：（1）在形成无机薄膜的位置处将聚酰亚胺树脂上施加碱性水溶液以切割酰亚胺环的步骤的聚酰亚胺树脂以产生羧基并将聚酰亚胺树脂重整为聚酰胺酸，由此形成包含具有羧基的聚酰胺酸的重整部分; （2）将聚酰胺酸溶解的溶剂与重整部分接触以除去部分重整部分以形成凹部的步骤; （3）将含有金属离子的溶液接触到靠近凹部的重整部分的步骤，以产生羧基的金属盐; 和（4）在聚酰亚胺树脂的表面上分离金属盐，金属氧化物或半导体的金属盐以形成无机薄膜的步骤。

3. 发明申请

US20060165877A1 Method for forming inorganic thin film pattern on polyimide resin 审中-公开
标题翻译：在聚酰亚胺树脂上形成无机薄膜图案的方法
公开(公告)号：US20060165877A1
公开(公告)日：2006-07-27
申请号：US11315200
申请日：2005-12-23
申请人： Hiroshi Yanagimoto , Hidemi Nawafune , Kensuke Akamatsu
发明人： Hiroshi Yanagimoto , Hidemi Nawafune , Kensuke Akamatsu
IPC分类号： B05D3/00 , B05D5/12
CPC分类号： C23C18/06 , C23C18/04 , C23C18/08 , C23C18/1216 , C23C18/1245 , C23C18/1275 , C23C18/1295 , H05K1/0346 , H05K3/0032 , H05K3/107 , H05K3/184 , H05K3/381 , H05K2201/0154 , H05K2201/0326 , H05K2203/0793 , H05K2203/1157 , H05K2203/1163
摘要： The present invention provides 1. A method for forming an inorganic thin film pattern on a polyimide resin, which has: (1) a step of forming an alkali-resistant protective film having a thickness of 0.01 to 10 μm on a surface of a polyimide resin; (2) a step of removing the alkali-resistant protective film and a superficial portion of the polyimide resin at the site where an inorganic thin film pattern is formed to form a concave part; (3) a step of contacting an alkaline aqueous solution to the polyimide resin in the concave part to cleave an imide ring of the polyimide resin so as to produce a carboxyl group whereby a polyimide resin having the carboxyl group is formed; (4) a step of contacting a solution containing a metal ion to the polyimide resin having the carboxyl group so as to produce a metal salt of the carboxyl group; and (5) a step of separating the metal salt as a metal, a metal oxide or a semiconductor on the surface of the polyimide resin so as to form the inorganic thin film pattern.
摘要翻译：本发明提供一种在聚酰亚胺树脂上形成无机薄膜图案的方法，其特征在于：（1）在聚酰亚胺的表面上形成厚度为0.01〜10μm的耐碱性保护膜的工序树脂; （2）在形成无机薄膜图案的部位除去耐碱性保护膜和聚酰亚胺树脂的表面部分以形成凹部的步骤; （3）将碱性水溶液与凹部中的聚酰亚胺树脂接触以将聚酰亚胺树脂的酰亚胺环切断以产生羧基，从而形成具有羧基的聚酰亚胺树脂的工序; （4）使含有金属离子的溶液与具有羧基的聚酰亚胺树脂接触以产生羧基金属盐的步骤; 和（5）在聚酰亚胺树脂的表面上分离作为金属的金属盐，金属氧化物或半导体以形成无机薄膜图案的步骤。

4. 发明申请

US20180195153A1 METHOD OF PRODUCING ALLOY NANOPARTICLES 审中-公开
公开(公告)号：US20180195153A1
公开(公告)日：2018-07-12
申请号：US15835599
申请日：2017-12-08
申请人： Fumitaka YOSHINAGA , Kensuke AKAMATSU
发明人： Fumitaka YOSHINAGA , Kensuke AKAMATSU
IPC分类号： C22C12/00 , B22F9/24 , B22F1/00
CPC分类号： C22C12/00 , B22F1/0018 , B22F9/24 , B22F2302/45 , B22F2304/054
摘要： A method of producing a homogenous skutterudite compound, CoSb3, having a crystallite diameter of 100 nm or less, by a convenient synthesis process, which is a method of producing CoSb3, comprising reducing Co2+ and Sb3+ to Co0 and Sb0, respectively, in a solution including a Co-containing compound and an Sb-containing compound using a reducing agent, wherein supplied amount of the Co-containing compound and the Sb-containing compound are adjusted in order to set a ratio of a reduction rate of Co2+ to Co0 to a reduction rate of Sb3+ to Sb0 to 1:2.9 to 1:3.1.

5. 发明申请

US20090134364A1 Polyamide acid containing ultrafine metal particle 审中-公开
标题翻译：含聚酰胺酸的超细金属颗粒
公开(公告)号：US20090134364A1
公开(公告)日：2009-05-28
申请号：US11991161
申请日：2006-08-28
申请人： Hidemi Nawafune , Kensuke Akamatsu
发明人： Hidemi Nawafune , Kensuke Akamatsu
IPC分类号： H01B1/22
CPC分类号： C09J11/04 , C08K3/08 , C08L79/00 , C09J9/02 , C09J179/08 , H01B1/22 , H05K3/321 , H05K2201/0154 , H05K2201/0257
摘要： The present invention provides a method for producing a polyamic acid containing ultrafine metal particles, which contains the steps of contacting an aqueous solution containing a water-soluble metal compound with fine polyamic acid particles to adsorb metal ions to the fine polyamic acid particles, and then performing a reduction treatment; and a conductive adhesive which contains as an active ingredient the polyamic acid containing ultrafine metal particles. The conductive adhesive of the present invention has excellent performance which enables the adhesive to be used as an alternative to high-temperature lead solders.
摘要翻译：本发明提供一种含有超细金属粒子的聚酰胺酸的制造方法，其特征在于，含有水溶性金属化合物的水溶液与聚酰胺酸微粒子接触，使金属离子吸附于聚酰胺酸微粒子，进行减量处理; 以及作为活性成分含有含有超细金属粒子的聚酰胺酸的导电性粘合剂。本发明的导电性粘合剂具有优异的性能，能够将粘合剂用作高温铅焊料的替代品。

6. 发明申请

US20050282384A1 Method for forming protective film and electroless plating bath 审中-公开
标题翻译：形成保护膜和化学镀浴的方法
公开(公告)号：US20050282384A1
公开(公告)日：2005-12-22
申请号：US10868824
申请日：2004-06-17
申请人： Hidemi Nawafune , Kensuke Akamatsu , Katashige Matsuda , Akira Fukunaga , Ryoichi Kimizuka , Moriji Matsumoto
发明人： Hidemi Nawafune , Kensuke Akamatsu , Katashige Matsuda , Akira Fukunaga , Ryoichi Kimizuka , Moriji Matsumoto
IPC分类号： C23C18/36 , H01L21/288 , H01L21/31 , H01L21/44 , H01L21/469 , H01L21/768
CPC分类号： C23C18/36 , H01L21/288 , H01L21/76849 , H01L21/76864
摘要： The present invention provides a method for forming a protective film selectively on metal interconnects, such as copper interconnects, of a substrate having an embedded interconnect structure, without causing the problem of contamination of the interconnects with an-alkali metal. The method for forming a protective film according to the present invention comprises: providing a substrate having embedded interconnects formed in a surface of the substrate; and bringing the surface of the substrate into contact with an electroless plating bath, thereby forming a protective film having a film thickness of 0.1 to 500 nm selectively on the exposed surface of the embedded interconnects; wherein the electroless plating bath contains cobalt ions, phosphinate ions and a complexing agent, uses cobalt phosphinate as a main supply source of the cobalt ions and the phosphinate ions, and does not substantially contain alkali metal ions.
摘要翻译：本发明提供了一种用于在具有嵌入式互连结构的基板的金属互连（例如铜互连）上选择性地形成保护膜的方法，而不会引起与碱金属互连的污染的问题。根据本发明的形成保护膜的方法包括：提供在衬底的表面中形成的具有嵌入互连的衬底; 并使基板的表面与化学镀浴接触，从而在嵌入式互连件的暴露表面上选择性地形成膜厚度为0.1至500nm的保护膜; 其中化学镀浴包含钴离子，次膦酸根离子和络合剂，使用次膦酸钴作为钴离子和次膦酸根离子的主要供应源，并且基本上不含有碱金属离子。

7. 发明授权

US08261437B2 Method for manufacturing a circuit board 失效
标题翻译：电路板制造方法
公开(公告)号：US08261437B2
公开(公告)日：2012-09-11
申请号：US12525967
申请日：2008-02-27
申请人： Hiroshi Yanagimoto , Takeshi Bessho , Hidemi Nawafune , Kensuke Akamatsu
发明人： Hiroshi Yanagimoto , Takeshi Bessho , Hidemi Nawafune , Kensuke Akamatsu
IPC分类号： H05K3/02
CPC分类号： H05K3/107 , H05K3/20 , H05K3/207 , H05K3/246 , H05K2201/0347 , H05K2201/09736 , H05K2203/0108 , Y10T29/49117 , Y10T29/49155 , Y10T29/49156 , Y10T29/49158
摘要： According to the present invention, a circuit board having a further-microfabricated circuit pattern that can be manufactured in further simplified steps is obtained. For such purpose, a mold 10, which has protrusions 11 formed in a pattern corresponding to a circuit pattern, is used to apply a conductive material layer (metal paste) 13 to head portions of the protrusions 11 of the mold 10. The mold is heat- and pressure-welded to the surface of a substrate 20 that is made of a resin film or the like. Accordingly, a pattern comprising the protrusions 11 and the conductive material layer (metal paste) 13 are transferred to the substrate 20. After transfer, the resin substrate (resin molding 30) is immersed in a copper sulfate plating bath for electrolytic plating treatment. Copper ions in the plating bath were deposited inside each recess 31 while the conductive material layer 13 is used as a base material for the formation of a metal wiring 32. A pattern of the recesses 31 transferred to the substrate-20 side is determined depending on a pattern comprising the protrusions 11 on the mold 10. Thus, a microfabricated high-density circuit pattern formed with metal wirings 32 having arbitrary aspect ratios can be obtained.
摘要翻译：根据本发明，可以获得可以进一步简化的步骤制造的具有更微细加工电路图案的电路板。为此目的，使用具有与电路图案相对应的图案形成的突起11的模具10，将导电材料层（金属糊）13施加到模具10的突起11的头部。模具为热压并且被压焊到由树脂膜等制成的基板20的表面上。因此，将包括突起11和导电材料层（金属膏）13的图案转印到基板20上。转印后，将树脂基板（树脂成型体30）浸渍在用于电解电镀处理的硫酸铜电镀浴中。将电镀液中的铜离子沉积在每个凹部31内，同时使用导电材料层13作为形成金属布线32的基材。转移到基板20侧的凹部31的图案根据在模具10上包括突起11的图案。因此，可以获得由具有任意长宽比的金属布线32形成的微细加工的高密度电路图案。

8. 发明申请

US20070212496A1 Process for Producing Metal Nonoparticle Composite Film 审中-公开
标题翻译：生产金属非颗粒复合膜的工艺
公开(公告)号：US20070212496A1
公开(公告)日：2007-09-13
申请号：US10595398
申请日：2004-10-13
申请人： Satoshi Tomita , Hidemi Nawafune , Kensuke Akamatsu
发明人： Satoshi Tomita , Hidemi Nawafune , Kensuke Akamatsu
IPC分类号： C08J7/00
CPC分类号： C08J7/06 , B82B3/00 , C08J7/12 , C08J7/14 , C08J2379/08
摘要： The present invention provides a process for producing a metal nanoparticle composite film, which is capable of independently controlling the particle diameter and the volume filling ratio of metal nanoparticles in the metal nanoparticle composite film. The process comprises the steps of (a) treating a polyimide resin film with an alkali aqueous solution to thereby introduce a carboxyl group, (b) bringing the resin film into contact with a solution containing metal ions, to thereby dope the metal ions in the resin film, and (c) performing thermal reduction treatment in a reducing gas, thereby producing the metal nanoparticle composite film containing the metal nanoparticles dispersed in the polyimide resin film, wherein the volume filling ratio of the metal nanoparticles in the composite film is controlled by regulating the thickness of a nanoparticle dispersed layer formed in the polyimide resin film with the thermal reduction treatment in the reducing gas in the step (c).
摘要翻译：本发明提供一种能够独立地控制金属纳米粒子复合膜中的金属纳米粒子的粒径和体积填充率的金属纳米粒子复合膜的制造方法。该方法包括以下步骤：（a）用碱水溶液处理聚酰亚胺树脂膜，从而引入羧基，（b）使树脂膜与含有金属离子的溶液接触，从而将金属离子掺入树脂膜，（c）在还原气体中进行热还原处理，由此制造含有分散在聚酰亚胺树脂膜中的金属纳米粒子的金属纳米粒子复合膜，其中复合膜中的金属纳米粒子的体积填充率由通过步骤（c）中的还原气体中的热还原处理来调节在聚酰亚胺树脂膜中形成的纳米粒子分散层的厚度。

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