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1. 发明申请

US20100321755A1 OPTICAL MODULATOR, METHODS OF MANUFACTURING AND OPERATING THE SAME AND OPTICAL APPARATUS INCLUDING THE OPTICAL MODULATOR 有权
标题翻译：光学调制器，其制造和操作方法以及包括光学调制器在内的光学设备
公开(公告)号：US20100321755A1
公开(公告)日：2010-12-23
申请号：US12720795
申请日：2010-03-10
申请人： Yong-chul CHO , Jae-hyung JANG , Yong-hwa PARK , Chang-soo PARK , Jong-In SONG
发明人： Yong-chul CHO , Jae-hyung JANG , Yong-hwa PARK , Chang-soo PARK , Jong-In SONG
IPC分类号： G02F1/03 , H01L31/18
CPC分类号： G02F1/01708 , G01S7/4816 , G01S7/4914 , G01S17/89 , G02F1/025
摘要： An optical modulator, methods of manufacturing and operating the same, and an optical apparatus including the optical modulator are disclosed. The optical modulator includes an electro-optical converter and an optical-electric converter, stacked perpendicular to a substrate, and a gate transistor. The gate transistor gates a signal transmitted to the electro-optical converter from the optical-electric converter and allows charges generated in the optical-electric converter and charges remaining in the electro-optical converter to flow while bypassing the electro-optical converter when gating ON is performed.
摘要翻译：公开了一种光调制器，其制造和操作方法，以及包括该光调制器的光学装置。光调制器包括垂直于衬底堆叠的电光转换器和光电转换器，以及栅极晶体管。栅极晶体管将从光电转换器传输到电光转换器的信号进行门控，并且允许在光电转换器中产生的电荷和电光转换器中剩余的电荷在门控ON时旁路电光转换器时流动被执行。

2. 发明授权

US06586272B1 Method for manufacturing MSM photodetector or using a HEMT structure incorporating a low-temperature grown semiconductor 有权
标题翻译：制造MSM光电探测器或使用结合有低温生长半导体的HEMT结构的方法
公开(公告)号：US06586272B1
公开(公告)日：2003-07-01
申请号：US10116339
申请日：2002-04-03
申请人： Jong In Song
发明人： Jong In Song
IPC分类号： H01L2100
CPC分类号： H01L31/1085 , H01L31/184 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： The present invention relates to the method for manufacturing an MSM photodetector using a HEMT structure incorporating a low-temperature grown semiconductor. The object of the present invention is to improve the speed characteristic of an MSM photodetector by using a HEMT structure incorporating a low-temperature grown semiconductor. The use of a HEMT structure incorporating a low-temperature grown semiconductor can reduce the number of holes reaching the metal electrode of MSM detectors, resulting in reduced hole current. As a result, the photocurrent response of the MSM detector using a HEMT structure incorporating a low-temperature grown semiconductor is dominated by electron current, resulting in a significant improvement in speed performance.
摘要翻译：本发明涉及使用包含低温生长半导体的HEMT结构制造MSM光电检测器的方法。本发明的目的是通过使用包含低温生长半导体的HEMT结构来改善MSM光电检测器的速度特性。使用结合有低温生长的半导体的HEMT结构可以减少到达 MSM检测器的金属电极，导致孔电流减小。结果，使用包含低温生长半导体的HEMT结构的MSM检测器的光电流响应由电子电流控制，导致速度性能的显着改善。

3. 发明申请

US20100308211A1 OPTOELECTRONIC SHUTTER, METHOD OF OPERATING THE SAME AND OPTICAL APPARATUS INCLUDING THE OPTOELECTRONIC SHUTTER 有权
标题翻译：光电开关，其操作方法和包括光电开关的光学装置
公开(公告)号：US20100308211A1
公开(公告)日：2010-12-09
申请号：US12644744
申请日：2009-12-22
申请人： Yong-chul CHO , Jae-hyung JANG , Yong-hwa PARK , Chang-soo PARK , Jong-in SONG
发明人： Yong-chul CHO , Jae-hyung JANG , Yong-hwa PARK , Chang-soo PARK , Jong-in SONG
IPC分类号： H05B37/02 , H01L31/16 , H01L31/153
CPC分类号： G01N21/41 , H01L27/14625 , H01L27/14806 , H01L27/15 , H01L31/153 , H01L31/1892 , H05B33/0842 , Y02E10/50
摘要： An optoelectronic shutter, a method of operating the same, and an optical apparatus including the optoelectronic shutter are provided. The optoelectronic shutter includes a phototransistor which generates an output signal from incident input light and a light emitting diode serially connected to the phototransistor. The light emitting diode outputs output light according to the output signal, and the output signal is gain-modulated according to a modulation of a current gain of the phototransistor.
摘要翻译：提供光电快门，其操作方法和包括光电快门的光学设备。光电快门包括一个光电晶体管，其产生来自入射输入光的输出信号和串联连接到光电晶体管的发光二极管。发光二极管根据输出信号输出输出光，并根据光电晶体管的电流增益的调制对输出信号进行增益调制。

4. 发明授权

US5541443A Active optical logic device incorporating a surface-emitting laser 失效
标题翻译：结合表面发射激光器的有源光逻辑器件
公开(公告)号：US5541443A
公开(公告)日：1996-07-30
申请号：US175422
申请日：1994-12-15
申请人： Yong H. Lee , Jong-In Song
发明人： Yong H. Lee , Jong-In Song
IPC分类号： H01L27/15 , H01L27/14 , H01S5/00 , H01S5/026 , H01S5/183 , H03K19/14 , G02B27/00
CPC分类号： H03K19/14 , H01L27/15 , H01S5/0261 , H01S5/0262 , H01S5/042 , H01S5/183
摘要： A semiconductor optoelectronic device which can be used to perform the logical INVERTER or NOR operation. The device includes a surface-emitting laser 200 electrically coupled to a heterojunction phototransistor 240. When the total illumination intensity at the phototransistor is below a given threshold, the laser is in a lasing state; when the total illumination exceeds the threshold, the laser is in a non-lasing state. The phototransistor is operated at bias voltages below the threshold for avalanche effects.
摘要翻译： PCT No.PCT / US92 / 03742 Sec。 371日期1994年12月15日 102（e）日期1994年12月15日PCT提交1992年5月5日PCT公布。公开号WO93 / 22839 日期：1993年11月11日一种可用于执行逻辑反相器或NOR运算的半导体光电子器件。该器件包括电耦合到异质结光电晶体管240的表面发射激光器200.当光电晶体管处的总照明强度低于给定阈值时，激光器处于激光状态; 当总照度超过阈值时，激光器处于非激光状态。光电晶体管的工作电压低于雪崩效应阈值。

5. 发明申请

US20080298813A1 ALL-OPTICAL FREQUENCY UPCONVERTER AND ALL-OPTICAL FREQUENCY UPCONVERSION METHOD IN RADIO-OVER-FIBER SYSTEM 有权
标题翻译：无光纤过滤器中的全光频率全频转换和全光频率上变换方法
公开(公告)号：US20080298813A1
公开(公告)日：2008-12-04
申请号：US12050871
申请日：2008-03-18
申请人： Jong-In SONG , Hyoung-Jun Kim
发明人： Jong-In SONG , Hyoung-Jun Kim
IPC分类号： H04B10/02
CPC分类号： H04B10/25758
摘要： Disclosed is an all-optical frequency upconverter in a radio-over-fiber system that outputs upconverted optical radio frequency (RF) signals using an optical intermediate frequency signal and an optical local oscillation signal. The all-optical frequency upconverter includes a semiconductor optical amplifier that mixes the optical intermediate frequency signal with the optical local oscillation signal through four wave mixing, and an optical filter that filters a plurality of frequency component signals, which are generated through the four wave mixing, to extract optical RF signals. According to the invention the system configuration can be made simple, and wide LO and IF frequency bandwidths can be provided.
摘要翻译：公开了一种在光纤无线电系统中的全光频上变频器，其使用光中频信号和光本地振荡信号输出上变频的射频（RF）信号。全光上变频器包括通过四波混频将光中频信号与光本地振荡信号混合的半导体光放大器，以及通过四波混频产生的多个频率分量信号的滤光器，以提取光学RF信号。根据本发明，可以使系统配置简单，并且可以提供宽的LO和IF频率带宽。

6. 发明授权

US06670652B2 Monolithically integrated E/D mode HEMT and method for fabricating the same 有权
标题翻译：单片集成E / D模式HEMT及其制造方法
公开(公告)号：US06670652B2
公开(公告)日：2003-12-30
申请号：US10088793
申请日：2002-03-22
申请人： Jong-In Song
发明人： Jong-In Song
IPC分类号： H01L310328
CPC分类号： H01L27/0605 , H01L21/8252
摘要： The monolithically integrated Enhancement/Depletion mode HEMT (high-electron-mobility transistor) of the present invention comprises: a buffer layer, a channel layer, a spacer layer, a first barrier layer, a second barrier layer, a third barrier layer, and an ohmic layer consecutively formed on a semiconductor substrate from bottom to top; the first exposed region (a gate region for a Depletion-mode HEMT) formed by selective etching of the ohmic layer to expose the third barrier layer; a second exposed region (a gate region for an Enhancement-mode HEMT) formed by selective etchings of the ohmic layer and the third barrier layer to expose the second barrier layer; and gate electrodes formed on the first and second exposed gate regions. According to the present invention, a monolithically integrated Enhancement/Depletion mode HEMT having a uniform threshold voltage can easily be fabricated. The second barrier layer, which has a larger bandgap energy compared with those of other barrier layers and is used for the fabrication of an Enhancement-mode HEMT, plays a role of increasing the potential barrier height with respect to the gate electrode metal. The increased potential barrier height can make the total thickness of barrier layers required for the threshold voltage of the Enhancement-mode HEMT device thicker than that of a conventional Enhancement-mode HEMT. This improves the speed characteristic of the Enhancement-mode HEMT since the transistor has a decreased gate capacitance.
摘要翻译：本发明的单片集成的增强/消耗模式HEMT（高电子迁移率晶体管）包括：缓冲层，沟道层，间隔层，第一势垒层，第二阻挡层，第三阻挡层和从底部到顶部连续地形成在半导体衬底上的欧姆层; 通过选择性蚀刻欧姆层以暴露第三阻挡层形成的第一曝光区域（用于耗尽型HEMT的栅极区域）; 通过欧姆层和第三阻挡层的选择性蚀刻形成的暴露第二阻挡层的第二曝光区域（用于增强型HEMT的栅极区域）; 以及形成在第一和第二暴露栅极区上的栅电极。根据本发明，可以容易地制造具有均匀阈值电压的单片集成增强/耗尽模式HEMT。与其它阻挡层的能隙相比具有更大的带隙能量并且用于制造增强型HEMT的第二阻挡层起到增加相对于栅电极金属的势垒高度的作用。增加的势垒高度可以使增强型HEMT器件的阈值电压所需的势垒层的总厚度比常规增强型HEMT的阈值电压的总厚度更厚。这提高了增强型HEMT的速度特性，因为晶体管具有降低的栅极电容。

7. 发明授权

US08675272B2 Optical modulator, methods of manufacturing and operating the same and optical apparatus including the optical modulator 有权
标题翻译：光调制器，其制造和操作方法以及包括光调制器的光学装置
公开(公告)号：US08675272B2
公开(公告)日：2014-03-18
申请号：US12720795
申请日：2010-03-10
申请人： Yong-chul Cho , Jae-hyung Jang , Yong-hwa Park , Chang-soo Park , Jong-In Song
发明人： Yong-chul Cho , Jae-hyung Jang , Yong-hwa Park , Chang-soo Park , Jong-In Song
IPC分类号： G02F1/01 , G02F1/03 , G02F1/07 , G02F1/017 , G02F1/025
CPC分类号： G02F1/01708 , G01S7/4816 , G01S7/4914 , G01S17/89 , G02F1/025
摘要： An optical modulator, methods of manufacturing and operating the same, and an optical apparatus including the optical modulator are disclosed. The optical modulator includes an electro-optical converter and an optical-electric converter, stacked perpendicular to a substrate, and a gate transistor. The gate transistor gates a signal transmitted to the electro-optical converter from the optical-electric converter and allows charges generated in the optical-electric converter and charges remaining in the electro-optical converter to flow while bypassing the electro-optical converter when gating ON is performed.
摘要翻译：公开了一种光调制器，其制造和操作方法，以及包括该光调制器的光学装置。光调制器包括垂直于衬底堆叠的电光转换器和光电转换器以及栅极晶体管。栅极晶体管将从光电转换器传输到电光转换器的信号进行门控，并且允许在光电转换器中产生的电荷和电光转换器中剩余的电荷在门控开启时旁路电光转换器时流动被执行。

8. 发明授权

US08027589B2 All-optical frequency upconverter and all-optical frequency upconversion method in radio-over-fiber system 有权
标题翻译：全光纤上变频器和全光频上变频方法
公开(公告)号：US08027589B2
公开(公告)日：2011-09-27
申请号：US12050871
申请日：2008-03-18
申请人： Jong-In Song , Hyoung-Jun Kim
发明人： Jong-In Song , Hyoung-Jun Kim
IPC分类号： H04B10/00 , H04B10/04
CPC分类号： H04B10/25758
摘要： Disclosed is an all-optical frequency upconverter in a radio-over-fiber system that outputs upconverted optical radio frequency (RF) signals using an optical intermediate frequency signal and an optical local oscillation signal. The all-optical frequency upconverter includes a semiconductor optical amplifier that mixes the optical intermediate frequency signal with the optical local oscillation signal through four wave mixing, and an optical filter that filters a plurality of frequency component signals, which are generated through the four wave mixing, to extract optical RF signals. According to the invention the system configuration can be made simple, and wide LO and IF frequency bandwidths can be provided.
摘要翻译：公开了一种在光纤无线电系统中的全光频上变频器，其使用光中频信号和光本地振荡信号输出上变频的射频（RF）信号。全光上变频器包括通过四波混频将光中频信号与光本地振荡信号混合的半导体光放大器，以及通过四波混频产生的多个频率分量信号的滤光器，以提取光学RF信号。根据本发明，可以使系统配置简单，并且可以提供宽的LO和IF频率带宽。

9. 发明授权

US06410944B1 Epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors 有权
标题翻译： p型GaN基半导体中低欧姆接触电阻的外延结构
公开(公告)号：US06410944B1
公开(公告)日：2002-06-25
申请号：US09394223
申请日：1999-09-13
申请人： Jong In Song
发明人： Jong In Song
IPC分类号： H01L3300
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/305 , H01L33/40
摘要： Disclosed are an epitaxial structure for low ohmic contact resistance in p-type GaN-based semiconductors and a method for growing such a structure. A very high density of p-type doped GaAs or p-type graded AlxGa1−xAs (0
摘要翻译：公开了用于p型GaN基半导体中的低欧姆接触电阻的外延结构以及用于生长这种结构的方法。在欧姆金属和p型GaN之间形成非常高密度的p型掺杂的GaAs或p型渐变的Al x Ga 1-x As（0

10. 发明授权

US08581166B2 Optoelectronic shutter, method of operating the same and optical apparatus including the optoelectronic shutter 有权
公开(公告)号：US08581166B2
公开(公告)日：2013-11-12
申请号：US12644744
申请日：2009-12-22
申请人： Yong-chul Cho , Jae-hyung Jang , Yong-hwa Park , Chang-soo Park , Jong-in Song
发明人： Yong-chul Cho , Jae-hyung Jang , Yong-hwa Park , Chang-soo Park , Jong-in Song
IPC分类号： H01L31/0328 , H01L31/0336
CPC分类号： G01N21/41 , H01L27/14625 , H01L27/14806 , H01L27/15 , H01L31/153 , H01L31/1892 , H05B33/0842 , Y02E10/50
摘要： An optoelectronic shutter, a method of operating the same, and an optical apparatus including the optoelectronic shutter are provided. The optoelectronic shutter includes a phototransistor which generates an output signal from incident input light and a light emitting diode serially connected to the phototransistor. The light emitting diode outputs output light according to the output signal, and the output signal is gain-modulated according to a modulation of a current gain of the phototransistor.

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