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1. 发明申请

US20170263861A1 METHOD OF FABRICATING MEMORY DEVICE 有权
公开(公告)号：US20170263861A1
公开(公告)日：2017-09-14
申请号：US15365977
申请日：2016-12-01
申请人： Jeong-heon PARK , Se-chung OH , Byoung-jae BAE , Jong-chul PARK
发明人： Jeong-heon PARK , Se-chung OH , Byoung-jae BAE , Jong-chul PARK
IPC分类号： H01L43/12 , H01L27/22 , H01L43/10 , H01L43/08 , H01L43/02
CPC分类号： H01L43/12 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A method of fabricating a memory device, the method including forming a first magnetization layer; forming a tunnel barrier layer on the first magnetization layer; forming a second magnetization layer on the tunnel barrier layer; forming a magnetic tunnel junction (MTJ) structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer; and forming a boron oxide in a sidewall of the MTJ structure by implanting boron.

2. 发明授权

US09159767B2 Methods of manufacturing magnetoresistive random access memory devices 有权
标题翻译：制造磁阻随机存取存储器件的方法
公开(公告)号：US09159767B2
公开(公告)日：2015-10-13
申请号：US14182316
申请日：2014-02-18
申请人： Jong-Chul Park , Gwang-Hyun Baek , Hyung-Joon Kwon , In-Ho Kim , Chang-Woo Sun
发明人： Jong-Chul Park , Gwang-Hyun Baek , Hyung-Joon Kwon , In-Ho Kim , Chang-Woo Sun
IPC分类号： H01L43/12 , H01L27/22
CPC分类号： H01L27/228 , G11C11/161 , H01L43/12
摘要： In a method of an MRAM device, first and second patterns are formed on a substrate alternately and repeatedly in a second direction. Each first pattern and each second pattern extend in a first direction perpendicular to the second direction. Some of the second patterns are removed to form first openings extending in the first direction. Source lines filling the first openings are formed. A mask is formed on the first and second patterns and the source lines. The mask includes second openings in the first direction, each of which extends in the second direction. Portions of the second patterns exposed by the second openings are removed to form third openings. Third patterns filling the third openings are formed. The second patterns surrounded by the first and third patterns are removed to form fourth openings. Contact plugs filling the fourth openings are formed.
摘要翻译：在MRAM器件的方法中，第一和第二图案在第二方向上交替且重复地形成在衬底上。每个第一图案和每个第二图案沿垂直于第二方向的第一方向延伸。去除一些第二图案以形成沿第一方向延伸的第一开口。形成填充第一开口的源极线。在第一和第二图案和源极线上形成掩模。掩模包括沿第一方向的第二开口，每个开口沿第二方向延伸。由第二开口暴露的第二图案的部分被去除以形成第三开口。形成填充第三开口的第三图案。由第一图案和第三图案包围的第二图案被去除以形成第四开口。形成填充第四开口的接触塞。

3. 发明申请

US20140273287A1 METHOD OF MANUFACTURING THE SAME 有权
标题翻译：制造方法
公开(公告)号：US20140273287A1
公开(公告)日：2014-09-18
申请号：US14208912
申请日：2014-03-13
申请人： Jong-Chul PARK , Jae-Hun SEO , Byong-Jae BAE , Chang-Woo SUN
发明人： Jong-Chul PARK , Jae-Hun SEO , Byong-Jae BAE , Chang-Woo SUN
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228
摘要： A method of manufacturing magnetoresistive random access memory (MRAM) device includes foaming first and second patterns on a substrate in an alternating and repeating arrangement, forming a first capping layer on top surfaces of the first and second patterns, and removing first portions of the first capping layer and a portion of the second patterns thereunder to form first openings exposing the substrate. The method further includes forming source lines filling lower portions of the first openings, respectively, forming second capping layer patterns filling upper portions of the first openings, respectively, and removing second portions of the first capping layer and a portion of the second patterns thereunder to form second openings exposing the substrate. Then, contact plugs and pad layers are integrally formed and sequentially stacked on the substrate to fill the second openings.
摘要翻译：一种制造磁阻随机存取存储器（MRAM）器件的方法包括以交替和重复布置在衬底上发泡第一和第二图案，在第一和第二图案的顶表面上形成第一覆盖层，以及去除第一和第二图案的第一部分盖层和其下的第二图案的一部分以形成暴露基板的第一开口。所述方法还包括分别形成填充所述第一开口的下部的源极线，分别形成填充所述第一开口的上部的第二封盖层图案，以及移除所述第一封盖层的第二部分及其下面的第二图案的一部分，形成露出衬底的第二开口。然后，将接触塞和垫层一体地形成并依次堆叠在基板上以填充第二开口。

4. 发明申请

US20140264672A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：磁性随机访问存储器件及其制造方法
公开(公告)号：US20140264672A1
公开(公告)日：2014-09-18
申请号：US14182316
申请日：2014-02-18
申请人： Jong-Chul Park , Gwang-Hyun Baek , Hyung-Joon Kwon , In-Ho Kim , Chang-Woo Sun
发明人： Jong-Chul Park , Gwang-Hyun Baek , Hyung-Joon Kwon , In-Ho Kim , Chang-Woo Sun
IPC分类号： H01L27/22 , H01L43/12
CPC分类号： H01L27/228 , G11C11/161 , H01L43/12
摘要： In a method of an MRAM device, first and second patterns are formed on a substrate alternately and repeatedly in a second direction. Each first pattern and each second pattern extend in a first direction perpendicular to the second direction. Some of the second patterns are removed to form first openings extending in the first direction. Source lines filling the first openings are formed. A mask is formed on the first and second patterns and the source lines. The mask includes second openings in the first direction, each of which extends in the second direction. Portions of the second patterns exposed by the second openings are removed to form third openings. Third patterns filling the third openings are formed. The second patterns surrounded by the first and third patterns are removed to form fourth openings. Contact plugs filling the fourth openings are formed.
摘要翻译：在MRAM器件的方法中，第一和第二图案在第二方向上交替且重复地形成在衬底上。每个第一图案和每个第二图案沿垂直于第二方向的第一方向延伸。去除一些第二图案以形成沿第一方向延伸的第一开口。形成填充第一开口的源极线。在第一和第二图案和源极线上形成掩模。掩模包括沿第一方向的第二开口，每个开口沿第二方向延伸。由第二开口暴露的第二图案的部分被去除以形成第三开口。形成填充第三开口的第三图案。由第一图案和第三图案包围的第二图案被去除以形成第四开口。形成填充第四开口的接触塞。

5. 发明申请

US20130011989A1 METHODS OF MANUFACTURING A DRAM DEVICE 失效
标题翻译：制造DRAM器件的方法
公开(公告)号：US20130011989A1
公开(公告)日：2013-01-10
申请号：US13540996
申请日：2012-07-03
申请人： Jong-Chul Park , Sang-Sup Jeong
发明人： Jong-Chul Park , Sang-Sup Jeong
IPC分类号： H01L21/8242
CPC分类号： H01L27/10888 , H01L21/76897 , H01L27/10855 , H01L27/10876
摘要： In methods of manufacturing a DRAM device, a buried-type gate is formed in a substrate. A capping insulating layer pattern is formed on the buried-type gate. A conductive layer pattern filling up a gap between portions of the capping insulating layer pattern, and an insulating interlayer covering the conductive layer pattern and the capping insulating layer pattern are formed. The insulating interlayer, the conductive layer pattern, the capping insulating layer pattern and an upper portion of the substrate are etched to form an opening, and a first pad electrode making contact with a first pad region. A spacer is formed on a sidewall of the opening corresponding to a second pad region. A second pad electrode is formed in the opening. A bit line electrically connected with the second pad electrode and a capacitor electrically connected with the first pad electrode are formed.
摘要翻译：在制造DRAM器件的方法中，在衬底中形成掩埋型栅极。掩埋型栅极上形成封盖绝缘层图案。形成填充封盖绝缘层图案的部分之间的间隙的导电层图案，以及覆盖导电层图案和封盖绝缘层图案的绝缘夹层。蚀刻绝缘中间层，导电层图案，封盖绝缘层图案和基板的上部以形成开口，以及与第一焊盘区域接触的第一焊盘电极。间隔件形成在对应于第二垫区域的开口的侧壁上。第二焊盘电极形成在开口中。形成与第二焊盘电极电连接的位线和与第一焊盘电极电连接的电容器。

6. 发明申请

US20120135579A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120135579A1
公开(公告)日：2012-05-31
申请号：US13293777
申请日：2011-11-10
申请人： Jong-chul Park , Sang-sup Jeong
发明人： Jong-chul Park , Sang-sup Jeong
IPC分类号： H01L21/02 , H01L21/60 , H01L21/762
CPC分类号： H01L27/0207 , H01L27/10855 , H01L27/10888
摘要： A method uses a line pattern to form a semiconductor device including asymmetrical contact arrays. The method includes forming a plurality of parallel first conductive line layers extending in a first direction on a semiconductor substrate. In this method, the semiconductor substrate may have active regions forming an oblique angle with the first direction. The method may further include forming a first mask layer and a second mask layer and using the first mask layer and the second mask layer to form a trench comprising a line area and a contact area by etching the first conductive line layers using the first mask layer and the second mask layer. The method further includes forming a gap filling layer filling the line area of the trench and forming a spacer of sidewalls of the contact area and forming a second conductive line layer electrically connected to the active region.
摘要翻译：一种方法使用线图形成包括不对称接触阵列的半导体器件。该方法包括在半导体衬底上形成沿第一方向延伸的多个平行的第一导电线层。在该方法中，半导体衬底可以具有与第一方向成倾斜角的有源区域。该方法还可以包括形成第一掩模层和第二掩模层，并且使用第一掩模层和第二掩模层通过使用第一掩模层蚀刻第一导线层以形成包括线区域和接触区域的沟槽和第二掩模层。该方法还包括形成填充沟槽的线区域并形成接触区域的侧壁的间隔物的间隙填充层，并形成电连接到有源区域的第二导线层。

7. 发明申请

US20110104889A1 Methods of Forming Integrated Circuit Devices Using Contact Hole Spacers to Improve Contact Isolation 有权
标题翻译：使用接触孔隔离器形成集成电路器件以改善接触隔离的方法
公开(公告)号：US20110104889A1
公开(公告)日：2011-05-05
申请号：US12965091
申请日：2010-12-10
申请人： Doo-young Lee , Sang-sup Jeong , Sung-gil Chol , Jong-chul Park , Jin-young Kim , Ki-jin Park
发明人： Doo-young Lee , Sang-sup Jeong , Sung-gil Chol , Jong-chul Park , Jin-young Kim , Ki-jin Park
IPC分类号： H01L21/768
CPC分类号： H01L21/76897 , H01L21/76831
摘要： Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.
摘要翻译：形成集成电路器件的方法包括接触孔中的上部侧壁间隔物，以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。这些方法包括在半导体衬底上形成层间绝缘层。层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层来形成第一材料的蚀刻速率。以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。

8. 发明授权

US07886063B2 User equipment, method and system for simultaneous session control 有权
标题翻译：用于同时进行会话控制的用户设备，方法和系统
公开(公告)号：US07886063B2
公开(公告)日：2011-02-08
申请号：US12353220
申请日：2009-01-13
申请人： Kang-Suk Huh , Young-Hwan Park , Chan Seok Lim , Jong-Chul Park , Young-Ae Kim
发明人： Kang-Suk Huh , Young-Hwan Park , Chan Seok Lim , Jong-Chul Park , Young-Ae Kim
IPC分类号： G06F15/16 , H04B1/38
CPC分类号： H04L65/4061 , H04L65/1006 , H04L65/1016 , H04L67/14 , H04W28/18 , H04W80/00 , H04W88/06
摘要： A user equipment (UE), method and system for processing session based communications, are discussed. According to an embodiment, the method includes receiving a message from a terminal that informs whether the terminal supports simultaneous PT (push-to) sessions; recognizing that the terminal supports simultaneous PT sessions according to the received message; and transporting data to one or more terminals through the server operating in B2BUA (Back-to-Back User Agent) mode, wherein a simultaneous PT session refers to a session where the server performs a PT session priority function or a PT session locking function.
摘要翻译：讨论了用于处理基于会话的通信的用户设备（UE），方法和系统。根据实施例，该方法包括：从终端接收消息，通知终端是否同时支持PT（推送）会话; 识别终端根据收到的消息支持PT会话; 并且通过B2BUA（背靠背用户代理）模式运行的服务器将数据传送到一个或多个终端，其中同时PT会话是指服务器执行PT会话优先级功能或PT会话锁定功能的会话。

9. 发明授权

US07875551B2 Methods of forming integrated circuit devices using contact hole spacers to improve contact isolation 有权
标题翻译：使用接触孔间隔物形成集成电路器件以改善接触隔离的方法
公开(公告)号：US07875551B2
公开(公告)日：2011-01-25
申请号：US12575682
申请日：2009-10-08
申请人： Doo-young Lee , Sang-sup Jeong , Sung-gil Choi , Jong-chul Park , Jin-young Kim , Ki-jin Park
发明人： Doo-young Lee , Sang-sup Jeong , Sung-gil Choi , Jong-chul Park , Jin-young Kim , Ki-jin Park
IPC分类号： H01L23/58
CPC分类号： H01L21/76897 , H01L21/76831
摘要： Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.
摘要翻译：形成集成电路器件的方法包括接触孔中的上部侧壁间隔物，以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。这些方法包括在半导体衬底上形成层间绝缘层。层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。该接触孔可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层而形成，并以较快的第一材料的蚀刻速率。以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。

10. 发明申请

US20110010834A1 DEVICE FOR REMOVABLY COUPLING DISPOSABLE NOZZLE TIP FOR BIDET 有权
标题翻译：用于移动连接的可移除喷嘴的设备
公开(公告)号：US20110010834A1
公开(公告)日：2011-01-20
申请号：US12887490
申请日：2010-09-21
申请人： Jong Chul PARK , Nam Choul BAEK , Woun Sik OH
发明人： Jong Chul PARK , Nam Choul BAEK , Woun Sik OH
IPC分类号： A61H35/00
CPC分类号： E03D9/08 , B05B15/65
摘要： Disclosed herein is a device for removably coupling a disposable nozzle tip for a bidet. The device includes a nozzle, a nozzle tip, a guide cover, and a removable coupling unit. The nozzle has a nozzle body through which a washing-water guide hole passes, and a coupling hole. The nozzle tip has a coupling protrusion removably inserted into the coupling hole, and a jet hole to spray washing water. The guide cover is secured to a bottom of the nozzle tip in such a way as to be positioned under the jet hole, and guides the washing water to the jet hole. The removable coupling unit includes external threads formed in an outer circumference of the coupling protrusion, and internal threads formed in an inner circumference of the coupling hole. Further, the device includes stoppers comprising a pair of a protrusion and a hole, or a pair of protrusions, provided on the nozzle and the nozzle tip in such a way as to be symmetric with respect to each other, and preventing the nozzle tip from excessively rotating relative to the nozzle. The device provides a clean nozzle tip, thus allowing the genital and anal areas to be hygienically washed using washing water, and simplifies the structure of the nozzle tip, thus facilitating a mounting and detaching operation, and includes stoppers, thus preventing the nozzle and the nozzle tip from being damaged.
摘要翻译：本文公开了一种用于可移除地联接用于坐浴盆的一次性喷嘴尖端的装置。该装置包括一个喷嘴，一个喷嘴头，一个导向盖和一个可拆卸的联接单元。喷嘴具有洗涤水引导孔穿过的喷嘴体和联接孔。喷嘴头具有可拆卸地插入联接孔中的联接突起和用于喷射洗涤水的喷射孔。引导盖以这样的方式固定到喷嘴尖端的底部，以便定位在喷射孔下方，并将洗涤水引导到喷射孔。可移除联接单元包括形成在联接突起的外周中的外螺纹和形成在联接孔的内周中的内螺纹。此外，该装置包括在喷嘴和喷嘴头上设置有一对突起和孔或一对突起的止动件，以使其相对于彼此对称，并且防止喷嘴尖端相对于喷嘴过度旋转。该装置提供清洁的喷嘴尖端，从而允许生殖器和肛门区域使用洗涤水进行卫生洗涤，并且简化了喷嘴尖端的结构，从而便于安装和拆卸操作，并且包括止动器，从而防止喷嘴和喷嘴尖端损坏。

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