专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07897324B2 Lithographic method 有权
标题翻译：平版印刷法
公开(公告)号：US07897324B2
公开(公告)日：2011-03-01
申请号：US12065926
申请日：2006-09-05
申请人： Peter Zandbergen , Jeroen H Lammers , David Van Steenwinckel
发明人： Peter Zandbergen , Jeroen H Lammers , David Van Steenwinckel
IPC分类号： G03F7/40 , G03F1/00
CPC分类号： G03F7/0392
摘要： The present invention provides a method of lithographic patterning in order to the strength of the patterned photoresist. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; and exposing the photoresist (18) to actinic radiation through a mask pattern (12). This is followed, in either order, by carrying out a post-exposure bake; and developing the photoresist (18) with a developer to remove a portion of the photoresist which has been exposed to the actinic radiation. The polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and wherein the polymer resin is crosslinked by the action of the quencher during the bake.
摘要翻译：本发明提供了一种平版印刷图案化方法，以便图案化光致抗蚀剂的强度。该方法包括：向待图案化的表面施加包含聚合物树脂的光致抗蚀剂（18），在曝光于光化辐射时产生催化剂的光催化剂产生剂和猝灭剂; 以及通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射。接下来，按照任何顺序，通过进行曝光后烘烤; 以及用显影剂显影光致抗蚀剂（18）以去除已经暴露于光化辐射的光致抗蚀剂的一部分。聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂，并通过催化剂的作用使其溶解在显影剂中，并且其中聚合物树脂在烘烤期间通过猝灭剂的作用而交联。

2. 发明申请

US20080241764A1 Lithographic Method 有权
标题翻译：平版方法
公开(公告)号：US20080241764A1
公开(公告)日：2008-10-02
申请号：US12065926
申请日：2006-09-05
申请人： Peter Zandbergen , Jeroen H. Lammers , David Van Steenwinckel
发明人： Peter Zandbergen , Jeroen H. Lammers , David Van Steenwinckel
IPC分类号： G03F7/20
CPC分类号： G03F7/0392
摘要： The present invention provides a method of lithographic patterning in order to the strength of the patterned photoresist. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; and exposing the photoresist (18) to actinic radiation through a mask pattern (12). This is followed, in either order, by carrying out a post-exposure bake; and developing the photoresist (18) with a developer to remove a portion of the photoresist which has been exposed to the actinic radiation. The polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and wherein the polymer resin is crosslinked by the action of the quencher during the bake.
摘要翻译：本发明提供了一种平版印刷图案化方法，以便图案化光致抗蚀剂的强度。该方法包括：向待图案化的表面施加包含聚合物树脂的光致抗蚀剂（18），在曝光于光化辐射时产生催化剂的光催化剂产生剂和猝灭剂; 以及通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射。接下来，按照任何顺序，通过进行曝光后烘烤; 以及用显影剂显影光致抗蚀剂（18）以去除已经暴露于光化辐射的光致抗蚀剂的一部分。聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂，并通过催化剂的作用使其溶解在显影剂中，并且其中聚合物树脂在烘烤期间通过猝灭剂的作用而交联。

3. 发明授权

US07989155B2 Lithographic method 有权
标题翻译：平版印刷法
公开(公告)号：US07989155B2
公开(公告)日：2011-08-02
申请号：US12065930
申请日：2006-09-05
申请人： Peter Zandbergen , Jeroen H Lammers , David Van Steenwinckel
发明人： Peter Zandbergen , Jeroen H Lammers , David Van Steenwinckel
IPC分类号： G03F7/40 , G03F7/38
CPC分类号： G03F7/0392 , G03F7/0382
摘要： The present invention provides a method of lithographic patterning. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; exposing the photoresist (18) to actinic radiation through a mask pattern (12); carrying out a post-exposure bake; and then developing the photoresist (18) with a developer to remove a portion of the photoresist which has been rendered soluble in the developer. Either the polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and by the action of the quencher during the bake, or the polymer resin is soluble in the developer prior to exposure to actinic radiation and rendered substantially insoluble in the developer by the action of the catalyst, and by the action of the quencher during the bake.
摘要翻译：本发明提供一种平版印刷图案化方法。该方法包括：向待图案化的表面施加包含聚合物树脂的光致抗蚀剂（18），在曝光于光化辐射时产生催化剂的光催化剂产生剂和猝灭剂; 通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射; 进行曝光后烘烤; 然后用显影剂显影光致抗蚀剂（18）以除去已经溶解在显影剂中的一部分光致抗蚀剂。聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂，并且通过催化剂的作用并且通过猝灭剂在烘烤期间的作用而使其溶解在显影剂中，或者聚合物树脂可溶于显影剂前暴露于光化辐射并且通过催化剂的作用基本上不溶于显影剂，并且通过在烘烤期间猝灭剂的作用。

4. 发明申请

US20090130611A1 Lithographic Method 有权
标题翻译：平版方法
公开(公告)号：US20090130611A1
公开(公告)日：2009-05-21
申请号：US12065930
申请日：2006-09-05
申请人： Peter Zandbergen , Jeroen H. Lammers , David Van Steenwinckel
发明人： Peter Zandbergen , Jeroen H. Lammers , David Van Steenwinckel
IPC分类号： G03F7/20
CPC分类号： G03F7/0392 , G03F7/0382
摘要： The present invention provides a method of lithographic patterning. The method comprisese: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; exposing the photoresist (18) to actinic radiation through a mask pattern (12); carrying out a post-exposure bake; and then developing the photoresist (18) with a developer to remove a portion of the photoresist which has been rendered soluble in the developer. Either the polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and by the action of the quencher during the bake, or the polymer resin is soluble in the developer prior to exposure to actinic radiation and rendered substantially insoluble in the developer by the action of the catalyst, and by the action of the quencher during the bake.
摘要翻译：本发明提供一种平版印刷图案化方法。该方法包括：施加到待图案化的表面上，包括聚合物树脂的光致抗蚀剂（18），在光化辐射下产生催化剂的光催化剂产生剂和猝灭剂; 通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射; 进行曝光后烘烤; 然后用显影剂显影光致抗蚀剂（18）以除去已经溶解在显影剂中的一部分光致抗蚀剂。聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂，并且通过催化剂的作用并且通过猝灭剂在烘烤期间的作用而使其溶解在显影剂中，或者聚合物树脂可溶于显影剂中暴露于光化辐射并且通过催化剂的作用基本上不溶于显影剂，并且通过在烘烤期间猝灭剂的作用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式