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1. 发明授权

US07851791B2 Thin film transistor having N-type and P-type CIS thin films and method of manufacturing the same 有权
标题翻译：具有N型和P型CIS薄膜的薄膜晶体管及其制造方法
公开(公告)号：US07851791B2
公开(公告)日：2010-12-14
申请号：US12027929
申请日：2008-02-07
申请人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
发明人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
IPC分类号： H01L29/267
CPC分类号： H01L29/78681 , H01L29/24
摘要： Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe2) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.
摘要翻译：提供了使用CIS（CuInSe2）的薄膜晶体管（TFT），其包括作为硫属元素材料的Se，并且可以提供二极管的电和光开关功能。根据本发明的TFT包括：基板，形成在基板的一部分上的栅电极，覆盖基板的绝缘层和栅极电极，形成在绝缘层上的多个CIS（CuInSe 2）膜，以便覆盖形成栅电极的区域; 和源极/漏极区域彼此分离，以便包括暴露CIS膜表面的一部分的沟槽。

2. 发明申请

US20080217610A1 THIN FILM TRANSISTOR HAVING N-TYPE AND P-TYPE CIS THIN FILMS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：具有N型和P型CIS薄膜的薄膜晶体管及其制造方法
公开(公告)号：US20080217610A1
公开(公告)日：2008-09-11
申请号：US12027929
申请日：2008-02-07
申请人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
发明人： Sang Su Lee , Kibong Song , Jeong Dae Suh , Keongam Kim , Doo-Hee Cho
IPC分类号： H01L29/267 , H01L21/06
CPC分类号： H01L29/78681 , H01L29/24
摘要： Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe2) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.
摘要翻译：提供了使用包括作为硫属元素系材料的Se的CIS（CuInSe 2 N 2）的薄膜晶体管（TFT），并且可以提供整流功能，以及提供整流功能的电和光开关功能二极管。根据本发明的TFT包括：衬底，形成在衬底的一部分上的栅电极，覆盖衬底的绝缘层和栅电极，多个CIS（CuInSe 2/2）膜形成在绝缘层上以覆盖形成栅电极的区域; 和源极/漏极区域彼此分离，以便包括暴露CIS膜表面的一部分的沟槽。

3. 发明授权

US6004907A Method of fabricating a superconducting junction using cubic YBa.sub.2 Cu.sub.3 O .sub.x thin film as a barrier layer 失效
标题翻译：使用立方YBa2Cu3O x薄膜作为阻挡层制造超导结的方法
公开(公告)号：US6004907A
公开(公告)日：1999-12-21
申请号：US119394
申请日：1998-07-21
申请人： Jeong Dae Suh , Gun Yong Sung
发明人： Jeong Dae Suh , Gun Yong Sung
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496 , Y10S505/702
摘要： The present invention forms a superconducting junction using a cubic YBa.sub.2 Cu.sub.3 Ox thin film as a barrier layer. The present invention forms a first YBCO superconducting thin film, a SrTiO.sub.3 insulating layer thin film on the substrate, etches a side of them in the form of inclination, subsequently integrates a non-superconducting cubic YBCO barrier thin film, a second YBCO superconducting thin film, a SrTiO.sub.3 protecting layer thin film in series on the whole surface of the substrate, etches an opposite side of the etched part of the SrTiO.sub.3 insulating layer thin film in the form of inclination, fabricates a superconducting junction by forming a metal electrode to said aperture after forming apertures which expose said first YBCO superconducting thin film, the second YBCO superconducting thin film, fabricates a superconducting junction upon forming the metallic electrode to the apertures, and deposits a cubic YBa.sub.2 Cu.sub.3 Ox barrier thin film at a temperature of 600-650.degree. C. and a depositing velocity of 6.5-12.2 nm/s.
摘要翻译：本发明使用立方YBa2Cu3Ox薄膜作为阻挡层形成超导结。本发明在衬底上形成第一YBCO超导薄膜，SrTiO3绝缘层薄膜，以斜面的形式蚀刻它们的一面，随后将非超导立方YBCO阻挡薄膜，第二YBCO超导薄膜，在基板的整个表面上串联的SrTiO3保护层薄膜，以倾斜的形式蚀刻SrTiO 3绝缘层薄膜的蚀刻部分的相对侧，通过在所述孔径上形成金属电极来制造超导结在形成暴露所述第一YBCO超导薄膜的孔之后，第二YBCO超导薄膜在向孔隙形成金属电极时制造超导结，并在600-650℃的温度下沉积立方YBa2Cu3Ox势垒薄膜。并且沉积速度为6.5-12.2nm / s。

4. 发明授权

US08501524B2 Method of manufacturing thin-film light-absorbing layer, and method of manufacturing thin-film solar cell using the same 失效
标题翻译：薄膜光吸收层的制造方法以及使用该薄膜太阳能电池的薄膜太阳能电池的制造方法
公开(公告)号：US08501524B2
公开(公告)日：2013-08-06
申请号：US13034262
申请日：2011-02-24
申请人： Jung-Min Cho , Eun-Jin Bae , Chang-Woo Ham , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
发明人： Jung-Min Cho , Eun-Jin Bae , Chang-Woo Ham , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
IPC分类号： H01L21/00
CPC分类号： H01L31/0322 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/022466 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Disclosed is a method of manufacturing a thin-film light-absorbing layer using spraying, including mixing precursor solutions comprising CuCl2, InCl3 and SeC(NH2)2 under a nitrogen atmosphere at room temperature thus preparing a mixture solution; spraying the mixture solution on a substrate and drying it, thus forming a thin film; and selenizing the thin film under a selenium atmosphere. A method of manufacturing a thin-film solar cell is also provided, which includes forming a back contact layer on a glass substrate using sputtering; forming a light-absorbing layer on the back contact layer using spraying; forming a buffer layer on the light-absorbing layer using chemical vapor deposition; forming a window layer on the buffer layer using sputtering; and forming an upper electrode layer on the window layer.
摘要翻译：公开了一种使用喷雾制造薄膜光吸收层的方法，包括在室温下在氮气气氛下混合包含CuCl 2，InCl 3和SeC（NH 2）2的前体溶液，从而制备混合溶液; 将混合溶液喷在基片上并干燥，形成薄膜; 并在硒气氛下对薄膜进行硒化。还提供了一种制造薄膜太阳能电池的方法，其包括使用溅射在玻璃基板上形成背接触层; 使用喷雾在所述背面接触层上形成光吸收层; 使用化学气相沉积在所述光吸收层上形成缓冲层; 使用溅射在缓冲层上形成窗口层; 并在窗口层上形成上电极层。

5. 发明申请

US20120051998A1 METHOD OF FABRICATING CIS OR CIGS THIN FILM 失效
标题翻译：制造CIS或CIGS薄膜的方法
公开(公告)号：US20120051998A1
公开(公告)日：2012-03-01
申请号：US13070099
申请日：2011-03-23
申请人： Jung-Min CHO , Eun-Jin Bae , Ki-Bong Song , Jeong-Dae Suh , Myung-Ae Chung
发明人： Jung-Min CHO , Eun-Jin Bae , Ki-Bong Song , Jeong-Dae Suh , Myung-Ae Chung
IPC分类号： H01L31/0352 , C01B17/00 , C01B19/00
CPC分类号： C03C17/001 , C03C17/36 , C03C17/3605 , C03C17/3628 , C03C17/3631 , C03C17/3649 , C03C17/3678 , C03C2218/111 , H01L31/0322 , Y02E10/541
摘要： Disclosed herein is a method of fabricating a CIS or CIGS thin film, comprising: forming, on a substrate, a seed particle layer comprising copper-indium-compound seed particles comprising copper (Cu); indium (In); and at least one selected from the group consisting of gallium (Ga), sulfur (S) and selenium (Se), applying, on the seed particle layer, a water-soluble precursor solution comprising: a water-soluble copper (Cu) precursor; a water-soluble indium (In) precursor; and at least one selected from the group consisting of a water-soluble gallium (Ga) precursor, a water-soluble sulfur (S) precursor and a water-soluble selenium (Se) precursor, and forming a thin film at high temperature.
摘要翻译：本文公开了一种制造CIS或CIGS薄膜的方法，包括：在基底上形成包含铜（Cu）的铜 - 铟 - 复合种子颗粒的种子颗粒层; 铟（In）; 和选自镓（Ga），硫（S）和硒（Se）的至少一种，在种子颗粒层上施加水溶性前体溶液，其包含水溶性铜（Cu）前体 ; 水溶性铟（In）前体; 和选自水溶性镓（Ga）前体，水溶性硫（S）前体和水溶性硒（Se）前体）中的至少一种，并在高温下形成薄膜。

6. 发明申请

US20110209763A1 METHOD OF MANUFACTURING THIN-FILM LIGHT-ABSORBING LAYER, AND METHOD OF MANUFACTURING THIN-FILM SOLAR CELL USING THE SAME 失效
标题翻译：制造薄膜吸收层的方法及使用其制造薄膜太阳能电池的方法
公开(公告)号：US20110209763A1
公开(公告)日：2011-09-01
申请号：US13034262
申请日：2011-02-24
申请人： Jung-Min CHO , Eun-Jin Bae , Chang-Woo Ham , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
发明人： Jung-Min CHO , Eun-Jin Bae , Chang-Woo Ham , Jeong-Dae Suh , Myung-Ae Chung , Ki-Bong Song
IPC分类号： H01L31/0272 , H01L31/0264
CPC分类号： H01L31/0322 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/022466 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Disclosed is a method of manufacturing a thin-film light-absorbing layer using spraying, including mixing precursor solutions comprising CuCl2, InCl3 and SeC(NH2)2 under a nitrogen atmosphere at room temperature thus preparing a mixture solution; spraying the mixture solution on a substrate and drying it, thus forming a thin film; and selenizing the thin film under a selenium atmosphere. A method of manufacturing a thin-film solar cell is also provided, which includes forming a back contact layer on a glass substrate using sputtering; forming a light-absorbing layer on the back contact layer using spraying; forming a buffer layer on the light-absorbing layer using chemical vapor deposition; forming a window layer on the buffer layer using sputtering; and forming an upper electrode layer on the window layer.
摘要翻译：公开了一种使用喷雾制造薄膜光吸收层的方法，包括在室温下在氮气气氛下混合包含CuCl 2，InCl 3和SeC（NH 2）2的前体溶液，从而制备混合溶液; 将混合溶液喷在基片上并干燥，形成薄膜; 并在硒气氛下对薄膜进行硒化。还提供了一种制造薄膜太阳能电池的方法，其包括使用溅射在玻璃基板上形成背接触层; 使用喷雾在所述背面接触层上形成光吸收层; 使用化学气相沉积在所述光吸收层上形成缓冲层; 使用溅射在缓冲层上形成窗口层; 并在窗口层上形成上电极层。

7. 发明授权

US5846846A Method for making a superconducting field-effect device with grain boundary channel 失效
标题翻译：制造具有晶界通道的超导场效应装置的方法
公开(公告)号：US5846846A
公开(公告)日：1998-12-08
申请号：US560962
申请日：1995-11-20
申请人： Jeong-Dae Suh , Gun-Yong Sung
发明人： Jeong-Dae Suh , Gun-Yong Sung
IPC分类号： H01L39/00 , H01L29/78 , H01L39/22 , H01L39/24 , H01L21/00
CPC分类号： H01L39/2496 , H01L39/228
摘要： Disclosed is a method for making a superconducting field-effect device with a grain boundary channel, the method comprising the steps of depositing a first superconducting thin film on a substrate; patterning the first superconducting thin film to form a patterned superconducting thin film having an opening; depositing a template layer thereon; selectively etching back the template layer to form a patterned template layer; growing a second superconducting thin film to form a grain boundary therebetween; depositing an insulating layer on the second superconducting thin film to protect the second superconducting thin film from degrading in property in the air; selectively etching back the insulating layer to form a patterned insulating layer; forming a gate insulating layer on the patterned insulating layer; and coating metal electrodes thereon, source/drain being formed respectively on the etched portions, and a gate electrode being formed on the deposited portion of the gate insulating layer directly above the grain boundary. In the superconducting FET manufactured thus, since a gate electrode is formed directly above a grain boundary, current flowing between source and drain can be controlled by a voltage applied through an gate insulating layer. Also, since the grain boundary serving as a channel can be formed in a cheaper oxide crystal substrate by variation in a growing temperature of thin film without using an expensive by-crystal substrate, a high-temperature superconducting FET can be economically fabricated.
摘要翻译：公开了一种制造具有晶界通道的超导场效应器件的方法，该方法包括以下步骤：在衬底上沉积第一超导薄膜; 图案化第一超导薄膜以形成具有开口的图案化超导薄膜; 在其上沉积模板层; 选择性地蚀刻模板层以形成图案化的模板层; 生长第二超导薄膜以在其间形成晶界; 在所述第二超导薄膜上沉积绝缘层以保护所述第二超导薄膜不会降低空气中的性能; 选择性地蚀刻回绝缘层以形成图案化的绝缘层; 在所述图案化绝缘层上形成栅极绝缘层; 并在其上涂覆金属电极，分别在蚀刻部分上形成源极/漏极，以及形成在晶界正上方的栅极绝缘层的沉积部分上的栅电极。在这样制造的超导FET中，由于栅电极直接形成在晶界之上，所以可以通过栅极绝缘层施加的电压来控制在源极和漏极之间流动的电流。此外，由于可以通过在不使用昂贵的晶体基板的情况下通过薄膜的生长温度的变化而在较便宜的氧化物晶体基板中形成作为沟道的晶界，因此可以经济地制造高温超导FET。

8. 发明授权

US5677264A Process for forming A-axis oriented superconducting junction 失效
标题翻译：用于形成A轴取向超导结的方法
公开(公告)号：US5677264A
公开(公告)日：1997-10-14
申请号：US693673
申请日：1996-08-13
申请人： Jeong-Dae Suh , Gun-Yong Sung
发明人： Jeong-Dae Suh , Gun-Yong Sung
IPC分类号： H01L39/22 , H01L27/18 , H01L39/24
CPC分类号： H01L39/2496 , Y10S505/702
摘要： The present invention discloses a process for forming an a-axis superconducting junction by adjusting the deposition temperature of an oxide normal conductor layer/and oxide superconductor layer/an oxide insulating layer/an oxide normal conductor layer/and an oxide superconductor layer, which are sequentially multilayered on an oxide single crystalline substrate. According to the present invention, the oxide superconductor layer and the oxide insulating layer have an a-axis oriented perpendicularly, and the oxide normal conductor layer have a b-axis oriented perpendicularly, so that a superconductor Josephson junction may be obtained.
摘要翻译：本发明公开了一种通过调节氧化物正常导体层/氧化物超导体层/氧化物绝缘层/氧化物正常导体层/氧化物超导体层的沉积温度来形成a轴超导结的方法，顺序地多层在氧化物单晶衬底上。根据本发明，氧化物超导体层和氧化物绝缘层具有垂直取向的a轴，并且氧化物正常导体层具有垂直取向的b轴，从而可以获得超导体约瑟夫逊结。

9. 发明授权

US5663081A Method for making a high-temperature superconducting field-effect transistor with thick superconducting channel layer 失效
标题翻译：制造具有厚超导通道层的高温超导场效应晶体管的方法
公开(公告)号：US5663081A
公开(公告)日：1997-09-02
申请号：US352045
申请日：1994-11-30
申请人： Gun-Yong Sung , Jeong-Dae Suh
发明人： Gun-Yong Sung , Jeong-Dae Suh
IPC分类号： H01L39/22 , H01L39/02 , H01L39/14 , H01L39/24 , H01B12/00
CPC分类号： H01L39/146 , Y10S505/701
摘要： Disclosed is a method for making a high-temperature super-conducting field-effect transistor with a thick super-conducting channel, the method comprising the steps of depositing a template layer on an oxide crystal substrate by using a pulse laser depositing apparatus; forming a YBa.sub.2 Cu.sub.3 O.sub.7-x layer on the template layer; patterning the YBa.sub.2 Cu.sub.3 O.sub.7-x layer to form a patterned YBa.sub.2 Cu.sub.3 O.sub.7-x layer having an opening and expose a surface portion of the template layer; depositing a YBa.sub.2 Cu.sub.3 O.sub.7-x channel layer on the surface portion of the template layer and over the patterned YBa.sub.2 Cu.sub.3 O.sub.7-x layer, the channel layer having a thickness of from 60 to 100 nm; sequentially forming an SrTiO.sub.3 protective layer and an SrTiO.sub.3 insulating layer on the channel layer; dry-etching back portions of the insulating and protective layers using an etching mask so as to expose surface portions of the channel layer; and forming source/drain electrodes on both the surface portions of the channel layer and at the same time forming a gate electrode on the insulating layer in the opening. In the superconducting FET, the channel layer is formed from 60 to 100 nm in thickness between the substrate and the SrTiO.sub.3 layers. Even through the channel layer is affected by the stress-strain up to approximately 25 nm in depth from each surfaces thereof, since total depth of surface regions of the channel layer affected thus is about 50 nm, the channel layer has a super-conducting center region of from 10 to 50 nm in thickness in which a strain is completely eliminated.
摘要翻译：公开了一种制造具有厚超导通道的高温超导场效应晶体管的方法，所述方法包括以下步骤：通过使用脉冲激光沉积设备在氧化物晶体衬底上沉积模板层; 在模板层上形成YBa2Cu3O7-x层; 图案化YBa2Cu3O7-x层以形成具有开口并且暴露模板层的表面部分的图案化的YBa2Cu3O7-x层; 在模板层的表面部分和图案化的YBa2Cu3O7-x层上沉积YBa2Cu3O7-x沟道层，沟道层的厚度为60〜100nm; 在沟道层上依次形成SrTiO3保护层和SrTiO3绝缘层; 使用蚀刻掩模对绝缘和保护层的后蚀刻部分进行干蚀刻，以暴露沟道层的表面部分; 以及在沟道层的两个表面部分上形成源/漏电极，同时在开口中的绝缘层上形成栅电极。在超导FET中，在衬底和SrTiO 3层之间的沟道层的厚度为60〜100nm。即使通过沟道层也受到其每个表面深度约25nm的应力应变的影响，因此受影响的沟道层的表面区域的总深度约为50nm，沟道层具有超导中心其中应变完全消除的厚度为10至50nm的区域。

10. 发明授权

US08647394B2 Method of fabricating CIS or CIGS thin film 失效
标题翻译：制造CIS或CIGS薄膜的方法
公开(公告)号：US08647394B2
公开(公告)日：2014-02-11
申请号：US13070099
申请日：2011-03-23
申请人： Jung-Min Cho , Eun-Jin Bae , Ki-Bong Song , Jeong-Dae Suh , Myung-Ae Chung
发明人： Jung-Min Cho , Eun-Jin Bae , Ki-Bong Song , Jeong-Dae Suh , Myung-Ae Chung
IPC分类号： C01D3/00
CPC分类号： C03C17/001 , C03C17/36 , C03C17/3605 , C03C17/3628 , C03C17/3631 , C03C17/3649 , C03C17/3678 , C03C2218/111 , H01L31/0322 , Y02E10/541
摘要： Disclosed herein is a method of fabricating a CIS or CIGS thin film, comprising: forming, on a substrate, a seed particle layer comprising copper-indium-compound seed particles comprising copper (Cu); indium (In); and at least one selected from the group consisting of gallium (Ga), sulfur (S) and selenium (Se), applying, on the seed particle layer, a water-soluble precursor solution comprising: a water-soluble copper (Cu) precursor; a water-soluble indium (In) precursor; and at least one selected from the group consisting of a water-soluble gallium (Ga) precursor, a water-soluble sulfur (S) precursor and a water-soluble selenium (Se) precursor, and forming a thin film at high temperature.
摘要翻译：本文公开了一种制造CIS或CIGS薄膜的方法，包括：在基底上形成包含铜（Cu）的铜 - 铟 - 复合种子颗粒的种子颗粒层; 铟（In）; 和选自镓（Ga），硫（S）和硒（Se）的至少一种，在种子颗粒层上施加水溶性前体溶液，其包含水溶性铜（Cu）前体 ; 水溶性铟（In）前体; 和选自水溶性镓（Ga）前体，水溶性硫（S）前体和水溶性硒（Se）前体）中的至少一种，并在高温下形成薄膜。

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