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1. 发明授权

US08491987B2 Selectively coated self-aligned mask 有权
标题翻译：选择性涂层自对准面膜
公开(公告)号：US08491987B2
公开(公告)日：2013-07-23
申请号：US12164647
申请日：2008-06-30
申请人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
发明人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
IPC分类号： H01L23/58 , C08L53/00
CPC分类号： H05K3/0079 , H01L21/0331 , H01L21/76849 , H05K3/282 , H05K2203/1173 , Y10T428/24802
摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
摘要翻译：一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。可以将第一和第二区域处理成具有不同的表面性质。按照该方法制造的结构。用于练习该方法的组合物。

2. 发明授权

US08445316B2 Non-lithographic method of patterning contacts for a photovoltaic device 有权
标题翻译：图案化用于光伏器件的接触的非平版印刷方法
公开(公告)号：US08445316B2
公开(公告)日：2013-05-21
申请号：US13162712
申请日：2011-06-17
申请人： Ali Afzali-Ardakani , Jeffrey C. Hedrick , Mahmoud Khojasteh , Young-Hee Kim
发明人： Ali Afzali-Ardakani , Jeffrey C. Hedrick , Mahmoud Khojasteh , Young-Hee Kim
IPC分类号： H01L21/00 , H01L31/0224
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A dielectric material layer is formed on a front surface of a photovoltaic device. A patterned PMMA-type-material-including layer is formed on the dielectric material layer, and the pattern is transferred into the top portion of the photovoltaic device to form trenches in which contact structures can be formed. In one embodiment, a blanket PMMA-type-material-including layer is deposited on the dielectric material layer, and is patterned by laser ablation that removes ablated portions of PMMA-type-material. The PMMA-type-material-including layer may also include a dye to enhance absorption of the laser beam. In another embodiment, a blanket PMMA-type-material-including layer may be deposited on the dielectric material layer and mechanically patterned to form channels therein. In yet another embodiment, a patterned PMMA-type-material-including layer is stamped on top of the dielectric material layer.
摘要翻译：介电材料层形成在光电器件的前表面上。在介电材料层上形成图案化的含PMMA型材料的层，并且将图案转移到光伏器件的顶部以形成可形成接触结构的沟槽。在一个实施例中，将包覆的PMMA型材料层沉积在电介质材料层上，并通过激光烧蚀来图案化，其消除了PMMA型材料的烧蚀部分。含PMMA型材料的层还可以包括染料以增强激光束的吸收。在另一个实施例中，包覆的PMMA型材料层可以沉积在电介质材料层上并机械地图案化以在其中形成通道。在另一个实施例中，将包含图案的含PMMA型材料的层压印在介电材料层的顶部上。

3. 发明申请

US20120322200A1 NON-LITHOGRAPHIC METHOD OF PATTERNING CONTACTS FOR A PHOTOVOLTAIC DEVICE 有权
标题翻译：对光伏器件进行连接的非光刻方法
公开(公告)号：US20120322200A1
公开(公告)日：2012-12-20
申请号：US13162712
申请日：2011-06-17
申请人： Ali Afzali-Ardakani , Jeffrey C. Hedrick , Mahmoud Khojasteh , Young-Hee Kim
发明人： Ali Afzali-Ardakani , Jeffrey C. Hedrick , Mahmoud Khojasteh , Young-Hee Kim
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A dielectric material layer is formed on a front surface of a photovoltaic device. A patterned PMMA-type-material-including layer is formed on the dielectric material layer, and the pattern is transferred into the top portion of the photovoltaic device to form trenches in which contact structures can be formed. In one embodiment, a blanket PMMA-type-material-including layer is deposited on the dielectric material layer, and is patterned by laser ablation that removes ablated portions of PMMA-type-material. The PMMA-type-material-including layer may also include a dye to enhance absorption of the laser beam. In another embodiment, a blanket PMMA-type-material-including layer may be deposited on the dielectric material layer and mechanically patterned to form channels therein. In yet another embodiment, a patterned PMMA-type-material-including layer is stamped on top of the dielectric material layer.
摘要翻译：介电材料层形成在光电器件的前表面上。在介电材料层上形成图案化的含PMMA型材料的层，并且将图案转移到光伏器件的顶部以形成可形成接触结构的沟槽。在一个实施例中，将包覆的PMMA型材料层沉积在电介质材料层上，并通过激光烧蚀来图案化，其消除了PMMA型材料的烧蚀部分。含PMMA型材料的层还可以包括染料以增强激光束的吸收。在另一个实施例中，包覆的PMMA型材料层可以沉积在电介质材料层上并机械地图案化以在其中形成通道。在另一个实施例中，将包含图案的含PMMA型材料的层压印在介电材料层的顶部上。

4. 发明申请

US20110226981A1 MULTILAYERED CAP BARRIER IN MICROELECTRONIC INTERCONNECT STRUCTURES 审中-公开
标题翻译：微电子互连结构中的多层封闭阻挡层
公开(公告)号：US20110226981A1
公开(公告)日：2011-09-22
申请号：US13117536
申请日：2011-05-27
申请人： Jeffrey C. Hedrick , Elbert E. Huang
发明人： Jeffrey C. Hedrick , Elbert E. Huang
IPC分类号： C08L83/14 , C08L83/16
CPC分类号： H01L21/022 , H01L21/02126 , H01L21/02203 , H01L21/02205 , H01L21/02282 , H01L21/02304 , H01L21/0234 , H01L21/3121 , H01L21/314 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L21/76844 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Structures having low-k multilayered dielectric diffusion barrier layer having at least one low-k sublayer and at least one air barrier sublayer are described herein. The multilayered dielectric diffusion barrier layer are diffusion barriers to metal and barriers to air permeation. Methods and compositions relating to the generation of the structures are also described. The advantages of utilizing these low-k multilayered dielectric diffusion barrier layer is a gain in chip performance through a reduction in capacitance between conducting metal features and an increase in reliability as the multilayered dielectric diffusion barrier layer are impermeable to air and prevent metal diffusion.
摘要翻译：本文描述了具有至少一个低k子层和至少一个空气阻挡子层的具有低k多层介电扩散阻挡层的结构。多层电介质扩散阻挡层是对金属的扩散屏障和空气渗透屏障。还描述了与生成结构有关的方法和组合物。利用这些低k多层电介质扩散阻挡层的优点是通过降低导电金属特性之间的电容并且随着多层电介质扩散阻挡层对空气不透气并防止金属扩散而增加可靠性，可以提高芯片性能。

5. 发明授权

US07951705B2 Multilayered cap barrier in microelectronic interconnect structures 有权
标题翻译：微电子互连结构中的多层盖屏障
公开(公告)号：US07951705B2
公开(公告)日：2011-05-31
申请号：US12143918
申请日：2008-06-23
申请人： Jeffrey C. Hedrick , Elbert E. Huang
发明人： Jeffrey C. Hedrick , Elbert E. Huang
IPC分类号： H01L21/4763
CPC分类号： H01L21/022 , H01L21/02126 , H01L21/02203 , H01L21/02205 , H01L21/02282 , H01L21/02304 , H01L21/0234 , H01L21/3121 , H01L21/314 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L21/76844 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Structures having low-k multilayered dielectric diffusion barrier layer having at least one low-k sublayer and at least one air barrier sublayer are described herein. The multilayered dielectric diffusion barrier layer are diffusion barriers to metal and barriers to air permeation. Methods and compositions relating to the generation of the structures are also described. The advantages of utilizing these low-k multilayered dielectric diffusion barrier layer is a gain in chip performance through a reduction in capacitance between conducting metal features and an increase in reliability as the multilayered dielectric diffusion barrier layer are impermeable to air and prevent metal diffusion.
摘要翻译：本文描述了具有至少一个低k子层和至少一个空气阻挡子层的具有低k多层介电扩散阻挡层的结构。多层电介质扩散阻挡层是对金属的扩散屏障和空气渗透屏障。还描述了与生成结构有关的方法和组合物。利用这些低k多层介质扩散阻挡层的优点是通过降低导电金属特性之间的电容并且随着多层电介质扩散阻挡层对空气不透气并防止金属扩散而增加可靠性，可以提高芯片性能。

6. 发明授权

US07948051B2 Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same 有权
标题翻译：用于制备自对准掩模的非光刻方法，由相同制备的制品和用于其的组合物
公开(公告)号：US07948051B2
公开(公告)日：2011-05-24
申请号：US12164599
申请日：2008-06-30
申请人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
发明人： Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
IPC分类号： H01L21/70
CPC分类号： H05K3/0079 , H01L21/0331 , H01L21/76849 , H05K3/282 , H05K2203/1173 , Y10T428/24802
摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
摘要翻译：一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。可以将第一和第二区域处理成具有不同的表面性质。按照该方法制造的结构。用于练习该方法的组合物。

7. 发明授权

US07470597B2 Method of fabricating a multilayered dielectric diffusion barrier layer 有权
标题翻译：制造多层电介质扩散阻挡层的方法
公开(公告)号：US07470597B2
公开(公告)日：2008-12-30
申请号：US11416028
申请日：2006-05-02
申请人： Jeffrey C. Hedrick , Elbert E. Huang
发明人： Jeffrey C. Hedrick , Elbert E. Huang
IPC分类号： H01L23/52
CPC分类号： H01L21/022 , H01L21/02126 , H01L21/02203 , H01L21/02205 , H01L21/02282 , H01L21/02304 , H01L21/0234 , H01L21/3121 , H01L21/314 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L21/76844 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a structure including a low-k multilayered dielectric diffusion barrier layer having at least one low-k sublayer and at least one air barrier sublayer is described herein. The method includes applying a coating of a polymeric preceramic precursor, converting the polymeric preceramic precursor into a low-k sublayer, applying a coating of an air barrier sublayer and exposing the air barrier sublayer to a reactive plasma.
摘要翻译：本文描述了制造包括具有至少一个低k子层和至少一个空气阻挡子层的低k多层介电扩散阻挡层的结构的方法。该方法包括应用聚合物预陶瓷前体的涂层，将聚合物前陶瓷前体转化成低k子层，施加空气阻挡层的涂层并将空气屏障子层暴露于反应性等离子体。

8. 发明授权

US06803660B1 Patterning layers comprised of spin-on ceramic films 有权
标题翻译：图案层由旋涂陶瓷膜组成
公开(公告)号：US06803660B1
公开(公告)日：2004-10-12
申请号：US10627790
申请日：2003-07-25
申请人： Stephen M. Gates , Jeffrey C. Hedrick , Elbert E. Huang , Dirk Pfeiffer
发明人： Stephen M. Gates , Jeffrey C. Hedrick , Elbert E. Huang , Dirk Pfeiffer
IPC分类号： H01L2348
CPC分类号： H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/31144 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/316 , Y10S430/146 , Y10T428/31663
摘要： The present invention comprises a method for forming a hardmask including the steps of depositing a polymeric preceramic precursor film atop a substrate; converting the polymeric preceramic precursor film into at least one ceramic layer, where the ceramic layer has a composition of SivNwCxOyHz where 0.1≦v≦0.9, 0≦w≦0.5, 0.05≦x≦0.9, 0≦y≦0.5, 0.05≦z≦0.8 for v+w+x+y+z=1; forming a patterned photoresist atop the ceramic layer; patterning the ceramic layer to expose regions of the underlying substrate, where a remaining region of the underlying substrate is protected by the patterned ceramic layer; and etching the exposed region of the underlying substrate. Another aspect of the present invention is a buried etch stop layer having a composition of SivNwCxOyHz where 0.05
摘要翻译：本发明包括一种用于形成硬掩模的方法，包括以下步骤：在基底顶上沉积聚合物预陶瓷前体膜; 将聚合物前陶瓷前体膜转化为至少一个陶瓷层，其中陶瓷层具有SivNwCxOyHh的组成，其中0.1≤v≤0.9,0≤w≤0.5,0.05≤x≤0.9,0≤ 对于v + w + x + y + z = 1，y <= 0.5,0.05 <= z <= 0.8; 在陶瓷层顶部形成图案化的光刻胶; 图案化陶瓷层以暴露下面的衬底的区域，其中下面的衬底的剩余区域被图案化的陶瓷层保护; 并蚀刻下面的衬底的暴露区域。本发明的另一方面是具有SivNwCxOyHz组成的掩埋蚀刻停止层，其中0.05≤v≤0.8,0

9. 发明授权

US06486557B1 Hybrid dielectric structure for improving the stiffness of back end of the line structures 有权
标题翻译：用于提高线结构后端刚度的混合电介质结构
公开(公告)号：US06486557B1
公开(公告)日：2002-11-26
申请号：US09515110
申请日：2000-02-29
申请人： Charles R. Davis , Daniel Charles Edelstein , John C. Hay , Jeffrey C. Hedrick , Christopher Jahnes , Vincent McGahay , Henry A. Nye, III
发明人： Charles R. Davis , Daniel Charles Edelstein , John C. Hay , Jeffrey C. Hedrick , Christopher Jahnes , Vincent McGahay , Henry A. Nye, III
IPC分类号： H01L2348
CPC分类号： H01L21/76808 , H01L21/76835 , H01L23/5222 , H01L23/53228 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias.
摘要翻译：集成电路芯片上的多层共面铜镶嵌互连结构包括在集成电路基板上的第一平面互连层，并且具有由具有相对较低的介电常数和相对低的弹性模量的介电材料隔开的多个线导体。第一平面互连层上的第二平面互连层包括具有高于第一平面互连层的弹性模量和通过其的导电通孔的电介质膜。通孔选择性地与线路导体接触。第二平面互连层上的第三平面互连层具有被电介质材料隔开并选择性地与通孔接触的多个线导体。

10. 发明授权

US5725668A Expandable fluid treatment device for tublar surface treatments 失效
标题翻译：可膨胀流体处理装置，用于表面处理
公开(公告)号：US5725668A
公开(公告)日：1998-03-10
申请号：US770067
申请日：1996-12-19
申请人： Elizabeth F. Foster , Jeffrey C. Hedrick , Stephen L. Tisdale , Alfred Viehbeck
发明人： Elizabeth F. Foster , Jeffrey C. Hedrick , Stephen L. Tisdale , Alfred Viehbeck
IPC分类号： B05B13/02 , B05B15/04 , B08B3/02 , B05C1/04
CPC分类号： B08B3/022 , B05B13/0207 , B05B15/0406 , Y02P70/36 , Y10S118/11
摘要： An apparatus for applying a fluid to an outer surface of an elongated work piece having a longitudinal axis and a cross sectional shape, perpendicular to the longitudinal axis. The apparatus has a head member having an interior wall cross sectional shape adapted for receiving the cross sectional shape of the elongated work piece. The interior cross sectional shape defines an interior wall of the head member. The head member has an input end and an output end. The interior wall has means for applying the fluid to a surface of said elongated member. The head member has preferable a first part and a second part which are joined by an expandable member. The means for applying said fluid comprises a plurality of jets for directing said fluid on said surface and a plurality of output parts for recovering said fluid for applying a fluid to an outer surface, said elongated work piece having a longitudinal axis and a cross sectional shape, perpendicular to said longitudinal axis, comprising: a head member having an interior wall cross sectional shape adapted for receiving said cross sectional shape of said elongated work piece; said interior cross sectional shape defining an interior wall of said head member; said head member has an input end and an output end; said interior wall has means for applying said fluid to a surface of said elongated member.
摘要翻译：一种用于将流体施加到具有垂直于纵向轴线的纵向轴线和横截面形状的细长工件的外表面的装置。该装置具有头部构件，其具有适于接收细长工件的横截面形状的内壁横截面形状。内部横截面形状限定了头部构件的内壁。头部构件具有输入端和输出端。内壁具有将流体施加到所述细长构件的表面的装置。头部构件具有优选的第一部分和第二部分，其通过可扩张构件接合。用于施加所述流体的装置包括用于将所述流体引导在所述表面上的多个喷嘴和用于回收用于将流体施加到外表面的所述流体的多个输出部分，所述细长工件具有纵向轴线和横截面形状垂直于所述纵向轴线，包括：头部构件，其具有适于接收所述细长工件的所述横截面形状的内壁横截面形状; 所述内部横截面形状限定所述头部构件的内壁; 所述头部构件具有输入端和输出端; 所述内壁具有将所述流体施加到所述细长构件的表面的装置。

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