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1. 发明授权

US10563944B2 Gun barrel sound suppressor 有权
公开(公告)号：US10563944B2
公开(公告)日：2020-02-18
申请号：US16169451
申请日：2018-10-24
申请人： Kevin C. Campbell , Jeff A. White
发明人： Kevin C. Campbell , Jeff A. White
IPC分类号： F41A21/30
摘要： A gun barrel sound suppressor incorporating a housing having a breach end, a muzzle end, and a barrel axis extending between those ends; a bullet passage conduit aligned with the barrel axis; a first annular gas outlet port opening the bullet passage conduit; a first annular gas inlet port further opening the bullet passage conduit, the first annular gas inlet port being positioned muzzlewardly from the first annular gas outlet port; a first circumferentially extending “U” channel having a web, having a breachward arm having a distal end, and having a muzzleward arm having a distal end, wherein the distal end of the first breachward arm communicates with the first annular gas outlet port, and wherein the distal end of the first muzzleward arm communicates with the first annular gas inlet port.

2. 发明申请

US20200025493A1 Sound Suppressing Gun Barrel 审中-公开
公开(公告)号：US20200025493A1
公开(公告)日：2020-01-23
申请号：US16245545
申请日：2019-01-11
申请人： Kevin Campbell , Jeff A. White
发明人： Kevin Campbell , Jeff A. White
IPC分类号： F41A21/30 , F41A21/24
摘要： A sound suppressing gun barrel incorporating a bullet channel having breachward and muzzleward ends; at least a first “U” channel positioned radially outwardly from the bullet channel, the at least first “U” channel having a web, having a gas receiving arm extending muzzlewardly from the web, and having first and second gas conveying arms extending muzzlewardly from opposite ends of the web; the sound suppressing gun barrel further having an inlet port opening the at least first “U” channel at a muzzleward end of the at least first “U” channel's first gas conveying arm, the inlet port communicating with the bullet channel; the sound suppressing gun barrel further having an outlet port further opening the at least first “U” channel, the outlet port being positioned at a muzzleward end of the at least first “U” channel's second gas conveying arm.

3. 发明授权

US09874418B2 Sound suppressing gun barrel 有权
公开(公告)号：US09874418B2
公开(公告)日：2018-01-23
申请号：US14752041
申请日：2015-06-26
申请人： Jeff A. White , Kevin Campbell
发明人： Jeff A. White , Kevin Campbell
IPC分类号： F41A21/30
CPC分类号： F41A21/30
摘要： A gun barrel for guiding a bullet along a longitudinal axis, the bullet having a diameter, the gun barrel having a circumferential series of lands, each land among the circumferential series of lands being radially displaced from the longitudinal axis a distance at least as great as one-half of the bullet's diameter, each land extending helically about the longitudinal axis; a plurality of sound reflection chambers, each sound reflection chambers among the plurality of sound reflection chambers being positioned between an adjacent pair of lands among the circumferential series of lands, each sound reflection chamber having a muzzle end, and each sound reflection chamber opening radially inwardly; and a plurality of sound reflection walls, each wall among the plurality of sound reflection walls closing one of the sound reflection chambers' muzzle ends.

4. 发明申请

US20150338184A1 Sound Suppressing Gun Barrel 审中-公开
标题翻译：声音抑制枪筒
公开(公告)号：US20150338184A1
公开(公告)日：2015-11-26
申请号：US14752041
申请日：2015-06-26
申请人： Jeff A. White , Kevin Campbell
发明人： Jeff A. White , Kevin Campbell
IPC分类号： F41A21/30
CPC分类号： F41A21/30
摘要： A gun barrel for guiding a bullet along a longitudinal axis, the bullet having a diameter, the gun barrel having a circumferential series of lands, each land among the circumferential series of lands being radially displaced from the longitudinal axis a distance at least as great as one-half of the bullet's diameter, each land extending helically about the longitudinal axis; a plurality of sound reflection chambers, each sound reflection chambers among the plurality of sound reflection chambers being positioned between an adjacent pair of lands among the circumferential series of lands, each sound reflection chamber having a muzzle end, and each sound reflection chamber opening radially inwardly; and a plurality of sound reflection walls, each wall among the plurality of sound reflection walls closing one of the sound reflection chambers' muzzle ends.
摘要翻译：一个用于沿纵向轴线引导子弹的枪管，子弹具有直径，枪筒具有周向系列的脊部，周向系列脊中的每个脊部从纵向轴线径向偏移至少与子弹直径的一半，每个陆地围绕纵向轴线螺旋地延伸; 多个声音反射室，所述多个声音反射室中的每个声音反射室位于所述周边系列的相邻的一对平台之间，每个声音反射室具有枪口端，并且每个声音反射室径向向内开口 ; 以及多个声音反射壁，所述多个声音反射壁中的每个壁关闭所述声音反射室的枪口端部中的一个。

5. 发明授权

US07504339B2 Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuits 有权
标题翻译：用于形成用于先进半导体电路的圆形上角的浅沟槽隔离的方法
公开(公告)号：US07504339B2
公开(公告)日：2009-03-17
申请号：US11142483
申请日：2005-06-01
申请人： Zhihao Chen , Freidoon Mehrad , Brian K. Kirkpatrick , Jeff A. White , Edmund G. Russell , Jon Holt , Jason D. Mehigan
发明人： Zhihao Chen , Freidoon Mehrad , Brian K. Kirkpatrick , Jeff A. White , Edmund G. Russell , Jon Holt , Jason D. Mehigan
IPC分类号： H01L21/311
CPC分类号： H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/76235
摘要： A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.
摘要翻译：描述半导体材料晶片中的沟槽结构和形成沟槽结构的方法。沟槽结构形成在半导体晶片上，该半导体晶片具有比半导体材料的其它主要晶面平缓的氧化速度慢的顶表面。沟槽被蚀刻到半导体晶片中。沟槽在顶表面附近具有基本垂直的沟槽侧壁，靠近顶表面的垂直沟槽侧壁含有以与顶表面相当的速率氧化的结晶平面。绝缘层生长在顶表面和沟槽侧壁以及侧壁表面接近顶表面的拐角处，角部处的绝缘层基本上比邻近角部的侧壁厚。氧化物厚度的差异是由于在拐角处暴露的氧化面更快。最后，沟槽填充有电介质材料。

6. 发明授权

US06917093B2 Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuits 有权
标题翻译：用于形成用于先进半导体电路的圆形上角的浅沟槽隔离的方法
公开(公告)号：US06917093B2
公开(公告)日：2005-07-12
申请号：US10691843
申请日：2003-10-23
申请人： Zhihao Chen , Freidoon Mehrad , Brian K. Kirkpatrick , Jeff A. White , Edmund G. Russell , Jon Holt , Jason D. Mehigan
发明人： Zhihao Chen , Freidoon Mehrad , Brian K. Kirkpatrick , Jeff A. White , Edmund G. Russell , Jon Holt , Jason D. Mehigan
IPC分类号： H01L21/316 , H01L21/762 , H01L21/76
CPC分类号： H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/76235
摘要： A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface of slow oxidization rate—slower than that of other major crystallographic planes of the semiconductor material. The trench is etched into the semiconductor wafer. The trench has substantially vertical trench-sidewalls near the top surface, the vertical trench-sidewalls near the top surface containing crystallographic plane that oxidizes at a rate comparable to that of the top surface. An insulating layer is grown on the top surface and on the trench-sidewalls and on corners where sidewall surfaces approach the top surface, the insulating layer at the corners being substantially thicker than at the sidewall adjacent to the corners. The difference in the oxide thickness is due to the faster oxidizing planes exposed at the corners. Finally, the trench is filled with a dielectric material.
摘要翻译：描述半导体材料晶片中的沟槽结构和形成沟槽结构的方法。沟槽结构形成在半导体晶片上，该半导体晶片具有比半导体材料的其它主要晶面平缓的氧化速度慢的顶表面。沟槽被蚀刻到半导体晶片中。沟槽在顶表面附近具有基本垂直的沟槽侧壁，靠近顶表面的垂直沟槽侧壁含有以与顶表面相当的速率氧化的结晶平面。绝缘层生长在顶表面和沟槽侧壁以及侧壁表面接近顶表面的拐角处，角部处的绝缘层基本上比邻近角部的侧壁厚。氧化物厚度的差异是由于在拐角处暴露的氧化面更快。最后，沟槽填充有电介质材料。

7. 发明授权

US10690432B2 Sound suppressing gun barrel 有权
公开(公告)号：US10690432B2
公开(公告)日：2020-06-23
申请号：US16245545
申请日：2019-01-11
申请人： Kevin C. Campbell , Jeff A. White
发明人： Kevin C. Campbell , Jeff A. White
IPC分类号： F41A21/30 , F41A21/24
摘要： A sound suppressing gun barrel incorporating a bullet channel having breachward and muzzleward ends; at least a first “U” channel positioned radially outwardly from the bullet channel, the at least first “U” channel having a web, having a gas receiving arm extending muzzlewardly from the web, and having first and second gas conveying arms extending muzzlewardly from opposite ends of the web; the sound suppressing gun barrel further having an inlet port opening the at least first “U” channel at a muzzleward end of the at least first “U” channel's first gas conveying arm, the inlet port communicating with the bullet channel; the sound suppressing gun barrel further having an outlet port further opening the at least first “U” channel, the outlet port being positioned at a muzzleward end of the at least first “U” channel's second gas conveying arm.

8. 发明申请

US20190145727A1 Gun Barrel Sound Suppressor 审中-公开
公开(公告)号：US20190145727A1
公开(公告)日：2019-05-16
申请号：US16169451
申请日：2018-10-24
申请人： Kevin C. Campbell , Jeff A. White
发明人： Kevin C. Campbell , Jeff A. White
IPC分类号： F41A21/30
CPC分类号： F41A21/30
摘要： A gun barrel sound suppressor incorporating a housing having a breach end, a muzzle end, and a barrel axis extending between those ends; a bullet passage conduit aligned with the barrel axis; a first annular gas outlet port opening the bullet passage conduit; a first annular gas inlet port further opening the bullet passage conduit, the first annular gas inlet port being positioned muzzlewardly from the first annular gas outlet port; a first circumferentially extending “U” channel having a web, having a breachward arm having a distal end, and having a muzzleward arm having a distal end, wherein the distal end of the first breachward arm communicates with the first annular gas outlet port, and wherein the distal end of the first muzzleward arm communicates with the first annular gas inlet port.

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