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1. 发明授权

US5005065A High current gate turn-off thyristor 失效
标题翻译：大电流门极关断晶闸管
公开(公告)号：US5005065A
公开(公告)日：1991-04-02
申请号：US334131
申请日：1989-04-06
申请人： Dante E. Piccone , James E. McIntyre, deceased , Leroy B. Major
发明人： Dante E. Piccone , James E. McIntyre, deceased , Leroy B. Major
IPC分类号： H01L29/744
CPC分类号： H01L29/744
摘要： This GTO thyristor comprises: (i) a cathode layer that is divided into a large number of cathode-layer fingers, (ii) a gate layer contiguous with the fingers, with a PN junction J1 between each finger and the gate layer, (iii) a cathode electrode on each finger, and (iv) a gate electrode on the gate layer having portions surrounding the fingers disposed in spaced relation to the fingers. Turn-off of the GTO thyristor is effected by forcing a turn-off current to flow between the cathode electrode of each finger and the gate electrode through the associated PN junction J1. This PN junction at each finger has a centrally-located region that is characterized by an avalanche voltage that is substantially lower than the avalanche voltage that characterizes this junction in the region of the junction surrounding the centrally-located region, and this relatively lower avalanche voltage enhances the current turn-off capabilities of the GTO thyristor.
摘要翻译：该GTO晶闸管包括：（i）分为大量阴极层指状物的阴极层，（ii）与指状物相邻的栅极层，每个指状物和栅极层之间具有PN结J1，（iii ）每个指状物上的阴极电极，以及（iv）栅极层上的栅极电极，其具有围绕指状物的部分，与手指间隔开设置。 GTO晶闸管的关断是通过强制关断电流通过相关联的PN结J1在每个指状物的阴极和栅电极之间流动来实现的。每个手指处的PN结具有中心定位的区域，其特征在于雪崩电压基本上低于在围绕中心定位区域的结的区域中表征该结的雪崩电压，并且该相对较低的雪崩电压提高GTO晶闸管的电流关断能力。

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