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1. 发明授权

US5800665A Method and apparatus for fabricating semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US5800665A
公开(公告)日：1998-09-01
申请号：US589084
申请日：1996-01-23
申请人： Kazuhiro Okaniwa , Iwao Hayase
发明人： Kazuhiro Okaniwa , Iwao Hayase
IPC分类号： C09J5/00 , B23Q3/08 , B32B43/00 , C09J191/06 , C09J193/00 , H01L21/00 , H01L21/02 , H01L21/302 , B32B31/00
CPC分类号： B32B43/00 , H01L21/67017 , Y10S134/902 , Y10S156/93 , Y10T156/11 , Y10T156/19 , Y10T29/49819 , Y10T29/49822
摘要： A method of fabricating a semiconductor device includes preparing a semiconductor substrate having a surface and a mechanical strength; adhering a reinforcing plate to the surface of the semiconductor substrate with an adhesive to increase the mechanical strength of the semiconductor substrate and processing the semiconductor substrate; and immersing the semiconductor substrate with the reinforcing plate in a heated solvent to melt and dissolve the adhesive, thereby separating the semiconductor substrate from the reinforcing plate. An apparatus for performing the methods includes a holder for holding the semiconductor substrate with the reinforcing plate; a container for accommodating the holder and for containing a solvent that dissolves the adhesive and a heater for heating the solvent. When the adhesive between the semiconductor substrate and the reinforcing plate is sufficiently dissolved by the solvent, the semiconductor substrate is separated from the reinforcing plate. Therefore, no force is applied to the semiconductor substrate in the direction perpendicular to the surface of the semiconductor substrate, so that unwanted damage of the semiconductor substrate, such as cracking, is avoided.
摘要翻译：制造半导体器件的方法包括制备具有表面和机械强度的半导体衬底; 用粘合剂将增强板粘附到半导体衬底的表面，以增加半导体衬底的机械强度并处理半导体衬底; 并将具有加强板的半导体衬底浸入加热溶剂中以熔化并溶解粘合剂，从而将半导体衬底与增强板分离。一种用于执行该方法的装置包括用于将半导体衬底保持在加强板上的保持器; 用于容纳保持器并容纳溶解粘合剂的溶剂的容器和用于加热溶剂的加热器。当半导体衬底和加强板之间的粘合剂被溶剂充分溶解时，半导体衬底与加强板分离。因此，在与半导体衬底的表面垂直的方向上不对半导体衬底施加力，因此避免了半导体衬底的不必要的损坏，例如破裂。

2. 发明授权

US5139968A Method of producing a t-shaped gate electrode 失效
标题翻译：生产t形栅电极的方法
公开(公告)号：US5139968A
公开(公告)日：1992-08-18
申请号：US606855
申请日：1990-10-31
申请人： Iwao Hayase , Takuji Sonoda
发明人： Iwao Hayase , Takuji Sonoda
IPC分类号： H01L21/285 , H01L21/338 , H01L29/423 , H01L29/812
CPC分类号： H01L29/66863 , H01L21/28587 , H01L29/42316 , H01L29/8128 , Y10S148/14
摘要： A semiconductor device includes a relatively broad recess in a semiconductor substrate between a source electrode and a drain electrode, a relatively narrow, deeper recess closer to the source electrode than to the drain electrode, and a T-shaped gate electrode having a broad head disposed in the narrower recess. A production method for a semiconductor device having a T-shaped gate electrode provided with a broad head and disposed in a two stage recess includes producing a relatively broad recess in a semiconductor substrate leaving a dummy gate, producing a resist pattern for producing the head of the T-shaped gate electrode, exposing the dummy gate by removing some of the resist pattern, and thereafter producing a narrower, deeper recess closer to the source electrode than to the drain electrode, thereby producing a two stage recess structure and producing a T-shaped gate electrode in the deeper recess.
摘要翻译：半导体器件包括在源电极和漏电极之间的半导体衬底中的相对宽的凹槽，比漏极更靠近源电极的相对窄的较深的凹槽，以及具有宽的头部的T形栅电极在狭窄的凹处。一种半导体器件的制造方法，其具有设置有宽头部并设置在两级凹槽中的T形栅电极，包括在半导体衬底中产生相对宽的凹槽，留下虚拟栅极，产生用于制造 T形栅电极，通过去除一些抗蚀剂图案露出伪栅，然后产生比漏电极更靠近源电极的较深的较深的凹陷，从而产生两级凹槽结构并产生T- 在较深的凹槽中形成栅电极。

3. 发明授权

US5447596A Apparatus for producing semiconductor wafers 失效
标题翻译：用于生产半导体晶片的装置
公开(公告)号：US5447596A
公开(公告)日：1995-09-05
申请号：US207419
申请日：1994-03-08
申请人： Iwao Hayase
发明人： Iwao Hayase
IPC分类号： H01L21/304 , H01L21/683 , B32B35/00
CPC分类号： H01L21/6835 , H01L21/6838 , H01L2221/68327 , H01L2221/6834 , Y10S156/941 , Y10T156/11 , Y10T156/1111 , Y10T156/19 , Y10T279/11
摘要： An apparatus for separating a wafer from a support plate, to which the wafer is bonded with a thermally softened adhesive, includes an upper plate having opposite upper and lower surfaces and a plurality of holes having apertures at the lower surface through which air is evacuated to hold the support plate to the lower surface; a lower plate having opposite upper and lower surfaces and a plurality of holes having apertures at the upper surface through which air is evacuated to hold the wafer to the upper surface; a heater for softening the thermally softened adhesive embedded in at least one of the upper and lower plates; a robot arm for moving the upper plate in vertical and horizontal directions; and a shaft for rotatably connecting the upper plate to the robot arm. In operation, after the adhesive connecting the wafer and the support plate is softened by the heater, the robot arm moves the upper plate upward while rotating or turning the upper plate, whereby the support plate is separated from the wafer. Therefore, the wafer is prevented from cracking and breaking, whereby the production yield is increased, resulting in a reduction in the cost of the device.
摘要翻译：用于将晶片与热软化粘合剂结合的支撑板分离的装置包括具有相对的上表面和下表面的上板和在下表面具有孔的多个孔，空气通过该孔排空到将支撑板固定到下表面; 具有相对的上表面和下表面的下板和在上表面具有孔的多个孔，空气通过该孔抽空以将晶片保持在上表面; 用于软化嵌入至所述上板和下板中的至少一个的热软化粘合剂的加热器; 用于在垂直和水平方向上移动上板的机器人臂; 以及用于将上板可旋转地连接到机器人臂的轴。在操作中，在连接晶片和支撑板的粘合剂通过加热器软化之后，机器人臂在转动或转动上板的同时向上移动上板，由此支撑板与晶片分离。因此，防止晶片破裂和破裂，从而提高了生产成本，从而降低了装置的成本。

4. 发明授权

US4565746A Iron core for a stationary induction apparatus 失效
标题翻译：铁芯用于固定式感应装置
公开(公告)号：US4565746A
公开(公告)日：1986-01-21
申请号：US522380
申请日：1983-06-29
申请人： Iwao Hayase
发明人： Iwao Hayase
IPC分类号： H01F27/24 , H01F27/245
CPC分类号： H01F27/245 , H01F2003/106 , Y10S428/928 , Y10T428/12639 , Y10T428/12653
摘要： An iron core for a stationary induction apparatus, such as a transformer or reactor, comprising an alternate laminate of thin amorphous magnetic strips (21a to 21d) and silicon steel sheets (11a to 11d). It is low in electrical loss, and high in workability.
摘要翻译： PCT No.PCT / JP82 / 00421 Sec。 371日期1983年6月29日第 102（e）1983年6月29日，PCT，1982年10月28日提交。一种用于固定感应装置（例如变压器或反应器）的铁芯，包括薄的非晶磁条（21a至21d）和硅钢板（11a〜11d）。电损耗低，可加工性高。

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