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1. 发明授权

US11606064B2 Fourier domain mode-locked optoelectronic oscillator 有权
公开(公告)号：US11606064B2
公开(公告)日：2023-03-14
申请号：US16987012
申请日：2020-08-06
申请人： INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
发明人： Ming Li , Tengfei Hao , Jian Tang , Nuannuan Shi , Wei Li , Ninghua Zhu
IPC分类号： H03B17/00
摘要： A Fourier domain mode-locked optoelectronic oscillator includes a laser light source, a phase modulator, an optical notch filter, a photodetector, an electrical amplifier and a power divider; wherein the laser light source, the phase modulator, the optical notch filter and the photodetector together form a swept microwave photonic filter. The passband of the swept microwave photonic filter is determined by the difference in wavelength corresponding to the laser light source and the notch positions of the optical notch filter. In the present disclosure, the laser light source, the phase modulator, the optical notch filter, and the photodetector are configured to form a fast swept microwave photonic filter, the sweeping of a passband of the microwave photonic filter is realized by the sweeping of the laser light source or the optical notch filter, and the change in the filter's passband is matched with the latency for delivering a signal in the optoelectronic oscillator loop for one trip. As such, Fourier domain mode locking is realized, and a broadband adjustable chirped microwave signal can be output.

2. 发明申请

US20210281044A1 BROADBAND TUNING SYSTEM AND METHOD 有权
公开(公告)号：US20210281044A1
公开(公告)日：2021-09-09
申请号：US17136379
申请日：2020-12-29
申请人： INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
发明人： Wenhui Sun , Wei CHEN , Nuannuan SHI , Ninghua ZHU , Ming Li , Yu LIU , Xin WANG , Jinhua BAI , Haiqing YUAN , Wei LI
IPC分类号： H01S5/068 , H01S5/40 , H01S5/12 , H01S5/00 , H01S5/026
摘要： A broadband tuning system includes a first chip and a second chip. The first chip includes a first light amplification region, a first forward grating region and a first backward grating region that are sequentially arranged in a first direction. The first light amplification region is configured to amplify a first light source and to turn on or turn off the first light source, and the first forward grating region and the first backward grating region are configured to tune the first light source. The second chip includes a second light amplification region, a second forward grating region and a second backward grating region that are sequentially arranged in a second direction. The second light amplification region is configured to amplify a second light source and to turn on or turn off the second light source, and the second forward grating region and the second backward grating region are configured to tune the second light source.

3. 发明申请

US20210098651A1 SILICON-BASED DIRECT BANDGAP LIGHT-EMITTING MATERIAL AND PREPARATION METHOD THEREOF, AND ON-CHIP LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20210098651A1
公开(公告)日：2021-04-01
申请号：US16760863
申请日：2018-03-12
申请人： Institute of Semiconductors, Chinese Academy of Sciences
发明人： Junwei Luo , Linding Yuan , Shushen Li
IPC分类号： H01L33/34 , H01L33/00 , H01L33/18 , H01L33/02
摘要： The present disclosure provides a silicon-based direct band gap light-emitting material compatible with the CMOS fabrication process, and a preparation method thereof. The method comprises steps of: preparing a silicon-based material, wherein the silicon-based material is a germanium material or a silicon-germanium alloy; filling some of lattice interstitial sites of the silicon-based material with noble gas atoms and/or other atoms with a low atomic number, so as to expand the lattice volume in order to transform the band structure from indirect band gap to direct band gap, thereby obtaining a silicon-based direct band gap light-emitting material. The present disclosure also provides a silicon-based light-emitting device. The preparation method of the present disclosure is compatible with CMOS integrated circuit processes, and realizes direct band gap light-emission from germanium and silicon germanium alloy materials with a light-emitting efficiency comparable to that of direct band gap Group III-V materials such as InP and GaAs, thus offering a completely new solution for on-chip light sources required for silicon- or germanium-based optoelectronic integration technologies.

4. 发明申请

US20210066875A1 FOURIER DOMAIN MODE-LOCKED OPTOELECTRONIC OSCILLATOR 有权
公开(公告)号：US20210066875A1
公开(公告)日：2021-03-04
申请号：US16987012
申请日：2020-08-06
申请人： INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
发明人： Ming LI , Tengfei HAO , Jian TANG , Nuannuan SHI , Wei LI , Ninghua ZHU
IPC分类号： H01S1/00
摘要： A Fourier domain mode-locked optoelectronic oscillator includes a laser light source, a phase modulator, an optical notch filter, a photodetector, an electrical amplifier and a power divider; wherein the laser light source, the phase modulator, the optical notch filter and the photodetector together form a swept microwave photonic filter. The passband of the swept microwave photonic filter is determined by the difference in wavelength corresponding to the laser light source and the notch positions of the optical notch filter. In the present disclosure, the laser light source, the phase modulator, the optical notch filter, and the photodetector are configured to form a fast swept microwave photonic filter, the sweeping of a passband of the microwave photonic filter is realized by the sweeping of the laser light source or the optical notch filter, and the change in the filter's passband is matched with the latency for delivering a signal in the optoelectronic oscillator loop for one trip. As such, Fourier domain mode locking is realized, and a broadband adjustable chirped microwave signal can be output.

5. 发明授权

US10518354B2 Ultraviolet laser 3D printing method for precise temperature control of polymer material and device thereof 有权
公开(公告)号：US10518354B2
公开(公告)日：2019-12-31
申请号：US15507680
申请日：2015-04-24
申请人： INSTITUTE OF CHEMISTRY, CHINESE ACADEMY OF SCIENCES , INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
发明人： Xuechun Lin , Wenting Wang , Zhiyan Zhang , Shusen Zhao , Haijuan Yu , Yongmei Ma , Wenhua Sun , Jian Xu , Jinyong Dong , Chuncheng Li , Wenxin Fu
IPC分类号： B33Y10/00 , B23K26/364 , B23K26/12 , B33Y30/00 , B23K103/00 , B23K26/064 , B23K26/06 , B29C64/282 , B23K26/342 , B23K26/354
摘要： An ultraviolet laser 3D printing device includes a thermostat, a laser head, a non-contact type temperature monitoring device, a scanning galvanometer, a processing platform, a powder laying device, a material to be processed, a computer control system. The device is configured to perform the following functions: presetting a processing temperature by the control system; during the processing procedure, the temperature rise condition of the processed object is monitored by the non-contact type temperature monitoring device and fed back in real time to the control system; and by recording the rise value of the temperature within a certain period, the system can obtain the absorption capability of the laser and the temperature rise degree of the processed material, so that the laser output power can be calculated according to the preset processing temperature value, and the laser power can be adjusted in real time to precisely control the processing temperature.

6. 发明授权

US09791790B2 Method of aligning quadrate wafer in first photolithography process 有权
公开(公告)号：US09791790B2
公开(公告)日：2017-10-17
申请号：US14901541
申请日：2014-01-03
申请人： INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
发明人： Jinmin Li , Junxi Wang , Qingfeng Kong , Jinxia Guo , Xiaoyan Yi
IPC分类号： G03F9/00 , G03F1/42
CPC分类号： G03F9/7084 , G03F1/42
摘要： The present invention provides a method of aligning a quadrate wafer in a first photolithography process. The method includes: step A: fabricating mask aligning markers in a periphery region of a mask, which is used for a first exposure process of the quadrate wafer, around a mask pattern of the mask; step B: during the first exposure process, positioning the quadrate wafer in a preset region by using the mask aligning markers on the mask, and exposing the quadrate wafer through the mask; and step C: performing alignment for the quadrate wafer during a second exposure process and subsequent exposure processes by using aligning markers on the quadrate wafer that are obtained during the first exposure process. The method may be easily and reliably performed to ensure intact dies at periphery of a quadrate wafer to be produced and thus render increased yield of chips.

7. 发明申请

US20170163270A1 MULTI-STANDARD PERFORMANCE RECONFIGURABLE I/Q ORTHOGONAL CARRIER GENERATOR 有权
公开(公告)号：US20170163270A1
公开(公告)日：2017-06-08
申请号：US15321292
申请日：2014-06-24
申请人： Institute of Semiconductors, Chinese Academy of Sciences
发明人： Xiaodong Liu , Nanjian Wu , Haiyong Wang , Wenfeng Lou , Jingjing Chen , Zhao Zhang
IPC分类号： H03L7/099 , H03L7/093 , H02M3/07 , H04B1/40
CPC分类号： H03L7/099 , H02M3/07 , H03L7/0898 , H03L7/093 , H03L7/193 , H03L2207/06 , H04B1/40
摘要： The present disclosure discloses a multi-standard performance reconfigurable I/Q orthogonal carrier generator. The generator may implement a continuously covered I/Q carrier output of 0.1-5 GHz and continuously covered differential signal outputs of 5-10 GHz and 1.5-3 GHz by means of reasonable frequency assignment; also, carrier signals under various frequencies with different loop bandwidths, different phase noises, different power consumption levels and different locking times can be generated by configuring a programmable charge pump (102), a loop filter (103) parameter, a multi-path voltage-controlled oscillator (104) and a first multiplexer (105) corresponding thereto, a five-stage-division-by-two frequency division link (109) and a corresponding second multiplexer (110) and third multiplexer (112), so as to implement generation of a multi-standard performance reconfigurable I/Q orthogonal carrier.

8. 发明申请

US20170141780A1 WIRELESS RADIO-FREQUENCY TRANSMISSION APPARATUS 有权
公开(公告)号：US20170141780A1
公开(公告)日：2017-05-18
申请号：US15321991
申请日：2014-06-26
申请人： INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
发明人： Jingjing CHEN , Nanjian WU , Haiyong WANG , Weiyang LIU , Peng FENG
IPC分类号： H03L7/089 , H04L7/033 , H04B1/04 , H03L7/099
CPC分类号： H03L7/0891 , H03L7/099 , H03L7/193 , H04B1/04 , H04B1/403 , H04L7/033 , H04L27/12 , H04L27/152
摘要： The present disclosure discloses a wireless radio-frequency transmission apparatus, comprising: a phase frequency detector, a charge pump, a loop filter and a twin voltage-controlled oscillator, wherein the twin voltage-controlled oscillator comprises a first voltage-controlled oscillator and a second voltage-controlled oscillator which are of the same structure, wherein when the twin voltage-controlled oscillator is in a reception mode, the first voltage-controlled oscillator and the second voltage-controlled oscillator are coupled to each other to form a quadrature voltage-controlled oscillator, and the quadrature voltage-controlled oscillator, the phase frequency detector, the charge pump and the loop filter constitute a phase-locked loop to generate quadrature carriers for receiving information; and when the twin voltage-controlled oscillator is in a transmission mode, the first voltage-controlled oscillator, the phase frequency detector, the charge pump and the loop filter constitute a phase-locked loop, and the second voltage-controlled oscillator is used for performing frequency modulation on transmitted data. The present disclosure can maintain a carrier frequency to be stable during high data rate transmission, and have a relatively short locking time of frequency hopping.

9. 发明申请

US20160201220A1 METHODS OF FABRICATING POLYGON-SECTIONAL RODLIKE INGOT AND SUBSTRATE WITH ORIENTATION MARKER OR ROUNDED CORNERS, RODLIKE INGOT AND SUBSTRATE 审中-公开
标题翻译：用定向标记或圆形拐角制作多边形RODLIKE INGOT和底片的方法，RODLIKE INGOT和基板
公开(公告)号：US20160201220A1
公开(公告)日：2016-07-14
申请号：US14895179
申请日：2013-12-27
申请人： INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
发明人： Jinmin LI , Junxi WANG , Xiaoyan YI , Qingfeng KONG , Wenjun WANG , Qiang HU , Jianchang YAN , Tongbo WEI , Ping MA , Hongxi LU , Panfeng JI , Jinxia GUO
IPC分类号： C30B25/18 , B28D5/04 , C30B29/16 , C30B29/66 , C30B29/64
CPC分类号： C30B25/18 , B28D5/04 , C30B25/00 , C30B29/16 , C30B29/64 , C30B29/66
摘要： The present invention discloses a method of forming a polygon-sectional rodlike ingot having an orientation marker or rounded corners, a rodlike ingot and a sheet substrate so formed. The method comprises: selecting one of sides of the polygon-sectional rodlike ingot that is parallel to an axial direction thereof as a first feature of a surface orientation marker; forming a minisize notch, which is parallel to an edge, in the one of sides selected as the first feature in the axial direction of the rodlike ingot, as a second feature of the orientation marker; and processing the rodlike ingot to form rounded corners. The sheet substrate is obtained by cutting the rodlike ingot.
摘要翻译：本发明公开了一种形成具有定向标记或圆角的多边形棒状锭的方法，如此形成的棒状锭和片状基材。该方法包括：选择与其轴向方向平行的多边形棒状晶锭的一侧，作为表面取向标记的第一特征; 作为取向标记的第二特征，在作为棒状锭的轴向方向上的第一特征的一侧中形成平行于边缘的微小凹口; 并加工棒状锭以形成圆角。通过切割棒状锭获得片状基材。

10. 发明授权

US09059516B2 3D package device of photonic integrated chip matching circuit 有权
标题翻译：光子集成芯片匹配电路的3D封装器件
公开(公告)号：US09059516B2
公开(公告)日：2015-06-16
申请号：US13713461
申请日：2012-12-13
申请人： INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
发明人： Ninghua Zhu , Jiasheng Wang , Jianguo Liu , Yu Liu
IPC分类号： H01Q11/02 , H01Q13/20 , G02F1/01 , H01L23/66 , H01P11/00
CPC分类号： H01Q13/206 , G02F1/0121 , H01L23/66 , H01L2224/45144 , H01L2224/48091 , H01P11/003 , H01L2924/00014 , H01L2924/00
摘要： A 3D package device of a photonic integrated chip matching circuit, comprising: a first carrier substrate; a first microwave transmission line array formed by evaporation on the top surface of the first carrier substrate to provide bias voltages and high-frequency modulation signals to the photonic integrated chip; a second carrier substrate formed perpendicularly to the first carrier substrate or to have a certain angle with respect to the first carrier substrate, so as to constitute a 3D structure; a second microwave transmission line array formed by evaporation on the bottom surface of the second carrier substrate to match electrodes of the first microwave transmission line array, the second microwave transmission line array being soldered or sintered with the electrodes of the first microwave transmission line array; an electrode array formed by evaporation on a side surface or two opposite side surfaces of the second carrier substrate; and a microwave circuit.
摘要翻译：一种光子集成芯片匹配电路的3D封装器件，包括：第一载体衬底; 第一微波传输线阵列，其通过在第一载体衬底的顶表面上的蒸发形成，以向光子集成芯片提供偏置电压和高频调制信号; 第二载体衬底，其垂直于第一载体衬底形成或相对于第一载体衬底具有一定角度，以构成3D结构; 第二微波传输线阵列，其通过在第二载体衬底的底表面上蒸发形成，以匹配第一微波传输线阵列的电极，第二微波传输线阵列与第一微波传输线阵列的电极焊接或烧结; 在所述第二载体基板的侧面或两个相对的侧面上通过蒸镀形成的电极列; 和微波电路。

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