专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07491601B2 Methods of forming electronic devices including electrodes with insulating spacers thereon 失效
标题翻译：形成电子器件的方法，包括其上具有绝缘间隔物的电极
公开(公告)号：US07491601B2
公开(公告)日：2009-02-17
申请号：US11956360
申请日：2007-12-14
申请人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
发明人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
IPC分类号： H01L21/8242 , H01L21/8243 , H01L21/8244
CPC分类号： H01L28/90 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer, and portions of the electrode most distant from the substrate may be free of the insulating spacer. Related methods and structures are also discussed.
摘要翻译：电子器件可以包括衬底，衬底上的导电层和绝缘间隔物。导电电极可以具有远离衬底延伸的电极壁。绝缘间隔物可以设置在电极壁上，电极壁的部分在衬底和绝缘间隔物之间没有绝缘间隔物，并且电极最远离衬底的部分可以没有绝缘间隔物。还讨论了相关的方法和结构。

2. 发明授权

US07888725B2 Electronic devices including electrode walls with insulating layers thereon 失效
标题翻译：电子设备包括其上具有绝缘层的电极壁
公开(公告)号：US07888725B2
公开(公告)日：2011-02-15
申请号：US12245218
申请日：2008-10-03
申请人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
发明人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
IPC分类号： H01L29/94
CPC分类号： H01L28/90 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： An electronic device may include a substrate and a plurality of conductive electrodes on the substrate. Each of the conductive electrodes may have a respective electrode wall extending away from the substrate, and an electrode wall of at least one of the conductive electrodes may include a recessed portion. In addition, an insulating layer may be provided on the electrode wall, and portions of the electrode wall may be free of the insulating layer between the substrate and the insulating layer.
摘要翻译：电子器件可以包括衬底和在衬底上的多个导电电极。每个导电电极可以具有远离基板延伸的相应电极壁，并且至少一个导电电极的电极壁可以包括凹部。此外，可以在电极壁上设置绝缘层，并且电极壁的部分在基板和绝缘层之间可以没有绝缘层。

3. 发明申请

US20090032905A1 Electronic Devices Including Electrode Walls with Insulating Layers Thereon 失效
标题翻译：电子设备，其中包括具有绝缘层的电极壁
公开(公告)号：US20090032905A1
公开(公告)日：2009-02-05
申请号：US12245218
申请日：2008-10-03
申请人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
发明人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
IPC分类号： H01G4/005 , H01L29/92
CPC分类号： H01L28/90 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： An electronic device may include a substrate and a plurality of conductive electrodes on the substrate. Each of the conductive electrodes may have a respective electrode wall extending away from the substrate, and an electrode wall of at least one of the conductive electrodes may include a recessed portion. In addition, an insulating layer may be provided on the electrode wall, and portions of the electrode wall may be free of the insulating layer between the substrate and the insulating layer.
摘要翻译：电子器件可以包括衬底和在衬底上的多个导电电极。每个导电电极可以具有远离基板延伸的相应电极壁，并且至少一个导电电极的电极壁可以包括凹部。此外，可以在电极壁上设置绝缘层，并且电极壁的部分在基板和绝缘层之间可以没有绝缘层。

4. 发明授权

US07380560B2 Wafer cleaning apparatus with probe cleaning and methods of using the same 有权
标题翻译：带探头清洁的晶圆清洗装置及其使用方法
公开(公告)号：US07380560B2
公开(公告)日：2008-06-03
申请号：US10843173
申请日：2004-05-11
申请人： In-joon Yeo , Il-sang Lee , Kang-youn Lee
发明人： In-joon Yeo , Il-sang Lee , Kang-youn Lee
IPC分类号： B08B3/12
CPC分类号： H01L21/67051 , B08B3/12 , Y10S134/902
摘要： Wafer cleaning apparatus include a cleaning tub configured to receive a wafer to be cleaned. A wafer cleaning unit coupled to the cleaning tub is configured to provide wafer cleaning solution to the wafer. A probe is positioned in the cleaning tub proximate the wafer. The probe is configured to provide megasonic vibrational energy to a surface of the wafer and/or the wafer cleaning solution to separate contaminants from the surface of the wafer. A probe cleaning unit is configured to provide a probe cleaning solution to the probe to clean the probe. Methods of using the wafer cleaning apparatus are also provided.
摘要翻译：晶片清洁装置包括配置为接收要清洁的晶片的清洗桶。耦合到清洁桶的晶片清洁单元被配置为向晶片提供晶片清洁溶液。探针位于靠近晶片的清洗槽中。探针被配置为向晶片和/或晶片清洁溶液的表面提供兆声波振动能量以从晶片的表面分离污染物。探针清洁单元被配置为向探针提供探针清洁溶液以清洁探针。还提供了使用晶片清洁装置的方法。

5. 发明授权

US07314795B2 Methods of forming electronic devices including electrodes with insulating spacers thereon 失效
标题翻译：形成电子器件的方法，包括其上具有绝缘间隔物的电极
公开(公告)号：US07314795B2
公开(公告)日：2008-01-01
申请号：US11397541
申请日：2006-04-04
申请人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
发明人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
IPC分类号： H01L21/8243 , H01L21/8244 , H01L21/8242 , H01L21/20
CPC分类号： H01L28/90 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer. Related methods and structures are also discussed.
摘要翻译：电子器件可以包括衬底，衬底上的导电层和绝缘间隔物。导电电极可以具有远离衬底延伸的电极壁。绝缘间隔物可以设置在电极壁上，电极壁的部分在衬底和绝缘间隔物之间没有绝缘隔离物。还讨论了相关的方法和结构。

6. 发明申请

US20060180843A1 Methods of forming electronic devices including electrodes with insulating spacers thereon 失效
标题翻译：形成电子器件的方法，包括其上具有绝缘间隔物的电极
公开(公告)号：US20060180843A1
公开(公告)日：2006-08-17
申请号：US11397541
申请日：2006-04-04
申请人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
发明人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
IPC分类号： H01L29/94
CPC分类号： H01L28/90 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer. Related methods and structures are also discussed.
摘要翻译：电子器件可以包括衬底，衬底上的导电层和绝缘间隔物。导电电极可以具有远离衬底延伸的电极壁。绝缘间隔物可以设置在电极壁上，电极壁的部分在衬底和绝缘间隔物之间没有绝缘隔离物。还讨论了相关的方法和结构。

7. 发明申请

US20050087210A1 Substrate cleaning device 失效
标题翻译：基板清洗装置
公开(公告)号：US20050087210A1
公开(公告)日：2005-04-28
申请号：US10972026
申请日：2004-10-21
申请人： In-Joon Yeo
发明人： In-Joon Yeo
IPC分类号： H01L21/304 , B08B3/10 , B08B3/12 , H01L21/00
CPC分类号： H01L21/67051 , B08B3/12 , Y10S134/902
摘要： A substrate cleaning device comprises a chamber for cleaning a substrate; a substrate support installed in the chamber providing a surface for supporting the substrate during cleaning thereof; at least one cleaning solution supply outlet for spraying a cleaning solution onto a surface of the substrate; a vibration force generator for supplying a vibratory action; a vibration force generating shaft which receives said vibratory action from the vibration force generator so that said vibration force generating shaft vibrates for agitating the cleaning solution on the substrate; and a vibration force distributor for preventing a vibration force from being concentrated on a portion of the substrate below the vibration force generating shaft.
摘要翻译：基板清洗装置包括用于清洁基板的室; 安装在所述腔室中的衬底支撑件，在其清洁期间提供用于支撑衬底的表面; 至少一个用于将清洁溶液喷射到所述基底的表面上的清洁溶液供应出口; 用于提供振动的振动力发生器; 振动力产生轴，其从所述振动力发生器接收所述振动作用，使得所述振动力产生轴振动以搅拌所述基板上的清洁溶液; 以及用于防止振动力集中在振动力产生轴下方的基板的一部分上的振动力分配器。

8. 发明授权

US07582559B2 Method of manufacturing a semiconductor device having voids in a polysilicon layer 有权
标题翻译：制造在多晶硅层中具有空隙的半导体器件的方法
公开(公告)号：US07582559B2
公开(公告)日：2009-09-01
申请号：US11249515
申请日：2005-10-14
申请人： In-Joon Yeo , Won-Jun Lee , Tae-Hyun Kim , Ji-Hong Kim , Byoung-Moon Yoon
发明人： In-Joon Yeo , Won-Jun Lee , Tae-Hyun Kim , Ji-Hong Kim , Byoung-Moon Yoon
IPC分类号： H01L21/4763
CPC分类号： H01L27/11521 , H01L27/115
摘要： A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate. The insulation pattern has at least one opening that exposes a surface of the substrate. Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening. The first polysilicon layer also includes a void therein. An upper portion of the first polysilicon layer is removed such that void expands to a recess and the recess is exposed. A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.
摘要翻译：制造半导体器件的方法包括在衬底上形成绝缘图案。绝缘图案具有暴露基板表面的至少一个开口。然后，在基板上形成第一多晶硅层，使得第一多晶硅层填充开口。第一多晶硅层还包括空隙。去除第一多晶硅层的上部，使得空隙膨胀到凹部并且凹部暴露。第二多晶硅层形成在衬底上，使得第二多晶硅层填充凹部。

9. 发明申请

US20080096347A1 METHODS OF FORMING ELECTRONIC DEVICES INCLUDING ELECTRODES WITH INSULATING SPACERS THEREON 失效
标题翻译：形成包含绝缘间隔电极的电子器件的方法
公开(公告)号：US20080096347A1
公开(公告)日：2008-04-24
申请号：US11956360
申请日：2007-12-14
申请人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
发明人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
IPC分类号： H01L21/8242
CPC分类号： H01L28/90 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer, and portions of the electrode most distant from the substrate may be free of the insulating spacer. Related methods and structures are also discussed.
摘要翻译：电子器件可以包括衬底，衬底上的导电层和绝缘间隔物。导电电极可以具有远离衬底延伸的电极壁。绝缘间隔物可以设置在电极壁上，电极壁的部分在衬底和绝缘间隔物之间没有绝缘间隔物，并且电极最远离衬底的部分可以没有绝缘间隔物。还讨论了相关的方法和结构。

10. 发明授权

US07053435B2 Electronic devices including electrodes with insulating spacers thereon 失效
标题翻译：电子设备包括其上具有绝缘隔离物的电极
公开(公告)号：US07053435B2
公开(公告)日：2006-05-30
申请号：US10796931
申请日：2004-03-10
申请人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
发明人： In-joon Yeo , Tae-hyuk Ahn , Kwang-wook Lee , Jung-woo Seo , Jeong-sic Jeon
IPC分类号： H01L21/20
CPC分类号： H01L28/90 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer. Related methods and structures are also discussed.
摘要翻译：电子器件可以包括衬底，衬底上的导电层和绝缘间隔物。导电电极可以具有远离衬底延伸的电极壁。绝缘间隔物可以设置在电极壁上，电极壁的部分在衬底和绝缘间隔物之间没有绝缘隔离物。还讨论了相关的方法和结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式