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    • 2. 发明申请
    • FLOAT-CONTROLLED WATER INFLOW SWITCHING DEVICE FOR WATER PUMP
    • 用于水泵的FLOAT控制水流开关装置
    • US20100139784A1
    • 2010-06-10
    • US12329645
    • 2008-12-08
    • I-JEN HUANG
    • I-JEN HUANG
    • F16K31/18
    • F16K31/126Y10T137/7358
    • A float-controlled water inflow switching device is provided for use with a water pump for pressurizing tap water and functions to safely collect and re-use of water drainage from the pump and associated piping for pressure relief purposes. The switching device includes a container arranged in water supply piping of the pump and forming a water return port connected to a water return pipe from the pump. The container includes a float arranged therein to selectively close/open a tap water supply port and has a water outlet port connected to the water in-feed end of the pump to directly supply tap water to the pump or to alternatively supply water contained in the container to the pump by means of automatic switching realized by closing the tap water supply port by the movement of the float at the time when the water inside the container reaches a preset water level.
    • 提供了一种浮子控制的水流量切换装置,用于与水泵一起用于对自来水加压并且用于从泵和相关联的管道安全地收集和重新使用排水以达到压力消除目的。 切换装置包括:设置在泵的供水管道中的容器,并且形成从泵连接到回水管的回水口。 容器包括布置在其中的浮子,用于选择性地关闭/打开自来水供应端口,并具有连接到泵的供水端的出水端口,以直接向泵供应自来水或交替地供应包含在泵 通过在容器内的水达到预设水位时浮子的移动来关闭自来水供应口而实现的自动切换实现容器到泵的容器。
    • 9. 发明申请
    • METHOD FOR PROGRAMMING A MULTILEVEL MEMORY
    • 编程多个存储器的方法
    • US20090303792A1
    • 2009-12-10
    • US12544025
    • 2009-08-19
    • Hsin-Yi HoNian-Kai ZousI-Jen HuangYung-Feng Lin
    • Hsin-Yi HoNian-Kai ZousI-Jen HuangYung-Feng Lin
    • G11C16/04
    • G11C11/5628G11C11/5671G11C2211/5621
    • A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises (a) programming the bits of the memory having a Vt level lower than the PV level of a targeted programmed state into programmed bits by using a Vd bias BL; (b) ending this method if each bit of the memory has a Vt level not lower than the PV level of the targeted programmed state, otherwise, continuing the step (c); and (c) setting BL=BL+K1 and repeating the step (a) if each of the programmed bits has a Vt level lower than the PV level, while setting BL=BL−K2, and repeating the step (a) if at least one of the programmed bits has a Vt level not lower than the PV level.
    • 提供了一种用于编程MLC存储器的方法。 MLC存储器有多个位,每个位都有多个编程状态。 每个编程状态具有第一PV级别。 该方法包括(a)通过使用Vd偏置BL将具有低于目标编程状态的PV电平的Vt电平的存储器的位编程为编程位; (b)如果存储器的每个位的Vt电平不低于目标编程状态的PV电平,则结束该方法,否则继续步骤(c); 以及(c)设定BL = BL + K1,并且如果每个编程的比特都具有低于PV水平的Vt级别,而设置BL = BL-K2,并重复步骤(a),如果在 至少一个编程位的Vt电平不低于PV电平。
    • 10. 发明申请
    • Method for programming a multilevel memory
    • 多级存储器编程方法
    • US20080310223A1
    • 2008-12-18
    • US11812033
    • 2007-06-14
    • Hsin-Yi HoNian-Kai ZousI-Jen HuangYung-Feng Lin
    • Hsin-Yi HoNian-Kai ZousI-Jen HuangYung-Feng Lin
    • G11C16/04
    • G11C11/5628G11C11/5671G11C2211/5621
    • A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises (a) programming the bits of the memory having a Vt level lower than the PV level of a targeted programmed state into programmed bits by using a Vd bias BL; (b) ending this method if each bit of the memory has a Vt level not lower than the PV level of the targeted programmed state, otherwise, continuing the step (c); and (c) setting BL=BL+K1 and repeating the step (a) if each of the programmed bits has a Vt level lower than the PV level, while setting BL=BL−K2, and repeating the step (a) if at least one of the programmed bits has a Vt level not lower than the PV level.
    • 提供了一种用于编程MLC存储器的方法。 MLC存储器有多个位,每个位都有多个编程状态。 每个编程状态具有第一PV级别。 该方法包括(a)通过使用Vd偏置BL将具有低于目标编程状态的PV电平的Vt电平的存储器的位编程为编程位; (b)如果存储器的每个位的Vt电平不低于目标编程状态的PV电平,则结束该方法,否则继续步骤(c); 以及(c)设定BL = BL + K1,并且如果每个编程的比特都具有低于PV水平的Vt级别,而设置BL = BL-K2,并重复步骤(a),如果在 至少一个编程位的Vt电平不低于PV电平。