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1. 发明申请

US20150194595A1 MAGNETIC MEMORY DEVICES 有权
标题翻译：磁记忆装置
公开(公告)号：US20150194595A1
公开(公告)日：2015-07-09
申请号：US14492419
申请日：2014-09-22
申请人： Jongchul Park , Hyungjoon Kwon , Joonkyu Rhee
发明人： Jongchul Park , Hyungjoon Kwon , Joonkyu Rhee
IPC分类号： H01L43/02 , H01L43/08
CPC分类号： H01L43/02 , H01L43/08 , H01L43/12
摘要： A magnetic memory device may include a lower electrode on a substrate, a memory element on the lower electrode, an upper electrode on the memory element, and a protection spacer enclosing a portion of a side surface of the lower electrode and protruding laterally from the side surface of the lower electrode. The protection spacer may have a bottom surface that is positioned at a level higher than that of a bottom surface of the lower electrode.
摘要翻译：磁存储器件可以包括衬底上的下电极，下电极上的存储元件，存储元件上的上电极，以及包围下电极的侧表面的一部分并从侧面侧向突出的保护间隔件下电极的表面。保护间隔件可以具有位于比下电极的底表面高的位置的底表面。

2. 发明申请

US20140024138A1 METHOD FOR ETCHING METAL LAYER AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：用于蚀刻金属层的方法和使用其制造半导体器件的方法
公开(公告)号：US20140024138A1
公开(公告)日：2014-01-23
申请号：US13941071
申请日：2013-07-12
申请人： Hyungjoon Kwon , Ken Tokashiki , Jongchul Park
发明人： Hyungjoon Kwon , Ken Tokashiki , Jongchul Park
IPC分类号： H01L21/3065 , H01L43/12
CPC分类号： H01L21/3065 , C23F4/00 , H01L21/32136 , H01L43/12
摘要： The inventive concepts disclosed herein include, for instance, methods for etching a metal layer and methods for manufacturing a semiconductor device using the etched metal layer. A wafer including a metal layer and a mask layer on the metal layer may be loaded into a process chamber. An etching gas may be supplied into the process chamber to etch the metal layer exposed by the mask layer. After the etching process, the mask layer may be removed. The etching gas can include phosphorus (P) and fluorine (F). An RF power may be constantly or selectively supplied to the process chamber, or different levels of RF power can be selectively supplied. An etching gas can be supplied to the process chamber when the RF power is off or at a lower level. A surface activation gas can be supplied when the RF power is on or at a higher level.
摘要翻译：本文公开的发明构思包括例如蚀刻金属层的方法和使用蚀刻金属层制造半导体器件的方法。在金属层上包括金属层和掩模层的晶片可以被加载到处理室中。可以将蚀刻气体供应到处理室中以蚀刻由掩模层暴露的金属层。在蚀刻工艺之后，可以去除掩模层。蚀刻气体可以包括磷（P）和氟（F）。 RF功率可以被恒定地或选择性地提供给处理室，或者可以选择性地提供不同级别的RF功率。当RF功率关闭或处于较低水平时，可将蚀刻气体供应到处理室。当RF功率开启或处于较高水平时，可以提供表面活化气体。

3. 发明申请

US20160149123A1 METHOD OF FORMING A PATTERN USING ION BEAMS OF BILATERAL SYMMETRY, A METHOD OF FORMING A MAGNETIC MEMORY DEVICE USING THE SAME, AND AN ION BEAM APPARATUS GENERATING ION BEAMS OF BILATERAL SYMMETRY 有权
标题翻译：使用双边对称离子束形成图案的方法，使用该方法形成磁记录装置的方法以及生成双边对称离子束的离子束装置
公开(公告)号：US20160149123A1
公开(公告)日：2016-05-26
申请号：US14919723
申请日：2015-10-21
申请人： Jongchul PARK , Hyungjoon KWON
发明人： Jongchul PARK , Hyungjoon KWON
IPC分类号： H01L43/12 , H01L21/3065
CPC分类号： H01L43/12 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/083 , H01J2237/3174 , H01J2237/334
摘要： A pattern-forming method includes providing a first ion beam at a first incidence angle and a second ion beam at a second incidence angle to a surface of an etch target layer formed on a substrate. Patterns are formed by patterning the etch target layer using the first and second ion beams. The first ion beam and the second ion beam are substantially symmetrical to each other with respect to a normal line that is perpendicular to a top surface of the substrate. Each of the first and second incidence angles is greater than 0 degrees and smaller than an angle obtained by subtracting a predetermined angle from 90 degrees.
摘要翻译：图案形成方法包括以第一入射角提供第一离子束，并以第二入射角提供第二离子束到形成在衬底上的蚀刻目标层的表面。通过使用第一和第二离子束图案化蚀刻目标层来形成图案。第一离子束和第二离子束相对于垂直于衬底顶表面的法线基本上彼此对称。第一入射角和第二入射角中的每一个大于0度并且小于通过从90度减去预定角度而获得的角度。

4. 发明申请

US20140349413A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140349413A1
公开(公告)日：2014-11-27
申请号：US14225401
申请日：2014-03-25
申请人： Sungyoon CHUNG , JINHYE BAE , HYUNGJOON KWON , JONGCHUL PARK , WONJUN LEE
发明人： Sungyoon CHUNG , JINHYE BAE , HYUNGJOON KWON , JONGCHUL PARK , WONJUN LEE
IPC分类号： H01L43/12 , H01L21/321 , H01L21/3213
CPC分类号： H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A method of manufacturing a semiconductor device may include forming a material layer on a substrate, performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surface of the material layer is not oxidized, and etching the material layer through the second surface to form a material pattern. An etch rate of the capping oxide layer is less than an etch rate of the material layer. A semiconductor device may include a lower electrode on a substrate, a data storage part on a top surface of the lower electrode, an upper electrode on the data storage part, and a capping oxide layer arranged on at least a portion of a top surface of the upper electrode. The capping oxide layer may include an oxide formed by oxidation of an upper surface of the upper electrode.
摘要翻译：制造半导体器件的方法可以包括在衬底上形成材料层，进行选择性氧化工艺以在材料层的第一表面上形成覆盖氧化物层，其中材料层的第二表面不被氧化，以及通过第二表面蚀刻材料层以形成材料图案。覆盖氧化物层的蚀刻速率小于材料层的蚀刻速率。半导体器件可以包括在基板上的下电极，在下电极的顶表面上的数据存储部分，数据存储部分上的上电极，以及覆盖氧化物层，其设置在上电极。覆盖氧化物层可以包括通过氧化上部电极的上表面形成的氧化物。

5. 发明申请

US20140021566A1 MAGNETIC DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：磁性装置及其制造方法
公开(公告)号：US20140021566A1
公开(公告)日：2014-01-23
申请号：US13763464
申请日：2013-02-08
申请人： ChanJin Park , WOOJIN KIM , HYUNGJOON KWON , SOONOH PARK , JONGCHUL PARK , SECHUNG OH
发明人： ChanJin Park , WOOJIN KIM , HYUNGJOON KWON , SOONOH PARK , JONGCHUL PARK , SECHUNG OH
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , G11C11/1659 , H01L43/08 , H01L43/12
摘要： Provided are a magnetic memory device and a method of fabricating the same. The device may include a magnetic tunnel junction including a lower magnetic structure, an upper magnetic structure, and a tunnel barrier interposed therebetween. The tunnel barrier may have a width greater than that of the lower magnetic structure.
摘要翻译：提供一种磁存储器件及其制造方法。该装置可以包括磁性隧道结，其包括下部磁性结构，上部磁性结构和插入其间的隧道屏障。隧道势垒可以具有大于下部磁性结构的宽度的宽度。

6. 发明申请

US20170179381A1 METHOD OF FORMING A PATTERN USING ION BEAMS OF BILATERAL SYMMETRY, A METHOD OF FORMING A MAGNETIC MEMORY DEVICE USING THE SAME, AND AN ION BEAM APPARATUS GENERATING ION BEAMS OF BILATERAL SYMMETRY 有权
公开(公告)号：US20170179381A1
公开(公告)日：2017-06-22
申请号：US15449897
申请日：2017-03-03
申请人： Jongchul PARK , Hyungjoon KWON
发明人： Jongchul PARK , Hyungjoon KWON
IPC分类号： H01L43/12 , H01J37/32
CPC分类号： H01L43/12 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/083 , H01J2237/3174 , H01J2237/334
摘要： A pattern-forming method includes providing a first ion beam at a first incidence angle and a second ion beam at a second incidence angle to a surface of an etch target layer formed on a substrate. Patterns are formed by patterning the etch target layer using the first and second ion beams. The first ion beam and the second ion beam are substantially symmetrical to each other with respect to a normal line that is perpendicular to a top surface of the substrate. Each of the first and second incidence angles is greater than 0 degrees and smaller than an angle obtained by subtracting a predetermined angle from 90 degrees.

7. 发明授权

US09525128B2 Semiconductor devices and methods of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US09525128B2
公开(公告)日：2016-12-20
申请号：US14225401
申请日：2014-03-25
申请人： Sungyoon Chung , Jinhye Bae , Hyungjoon Kwon , Jongchul Park , Wonjun Lee
发明人： Sungyoon Chung , Jinhye Bae , Hyungjoon Kwon , Jongchul Park , Wonjun Lee
IPC分类号： H01L43/12 , H01L21/321 , H01L21/3213
CPC分类号： H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A method of manufacturing a semiconductor device may include forming a material layer on a substrate, performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surface of the material layer is not oxidized, and etching the material layer through the second surface to form a material pattern. An etch rate of the capping oxide layer is less than an etch rate of the material layer. A semiconductor device may include a lower electrode on a substrate, a data storage part on a top surface of the lower electrode, an upper electrode on the data storage part, and a capping oxide layer arranged on at least a portion of a top surface of the upper electrode. The capping oxide layer may include an oxide formed by oxidation of an upper surface of the upper electrode.
摘要翻译：制造半导体器件的方法可以包括在衬底上形成材料层，进行选择性氧化工艺以在材料层的第一表面上形成覆盖氧化物层，其中材料层的第二表面不被氧化，以及通过第二表面蚀刻材料层以形成材料图案。覆盖氧化物层的蚀刻速率小于材料层的蚀刻速率。半导体器件可以包括在基板上的下电极，在下电极的顶表面上的数据存储部分，数据存储部分上的上电极，以及覆盖氧化物层，其设置在上电极。覆盖氧化物层可以包括通过氧化上部电极的上表面形成的氧化物。

8. 发明申请

US20160181511A1 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160181511A1
公开(公告)日：2016-06-23
申请号：US15057101
申请日：2016-02-29
申请人： HYUNGJOON KWON , SECHUNG OH , VLADIMIR URAZAEV , KEN TOKASHIKI , JONGCHUL PARK , Gwang-Hyun BAEK , Jaehun SEO , SANGMIN LEE
发明人： HYUNGJOON KWON , SECHUNG OH , VLADIMIR URAZAEV , KEN TOKASHIKI , JONGCHUL PARK , Gwang-Hyun BAEK , Jaehun SEO , SANGMIN LEE
IPC分类号： H01L43/02 , H01L27/22
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222 , H01L27/228 , H01L27/2436 , H01L27/2463 , H01L43/02 , H01L43/10 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： Provided are semiconductor devices and methods of fabricating the same. The semiconductor device may include lower wires, upper wires crossing the lower wires, select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires. Each of the memory elements may include a lower electrode having a top width greater than a bottom width, and a data storage layer including a plurality of magnetic layers stacked on a top surface of the lower electrode and having a rounded edge.
摘要翻译：提供半导体器件及其制造方法。半导体器件可以包括下部布线，穿过下部布线的上部布线，在下部布线和上部布线之间的交叉处提供的选择元件以及设置在选择元件和上部布线之间的存储元件。每个存储元件可以包括具有大于底部宽度的顶部宽度的下部电极，以及包括堆叠在下部电极的顶表面上并且具有圆形边缘的多个磁性层的数据存储层。

9. 发明授权

US09627610B2 Method of forming a pattern using ion beams of bilateral symmetry, a method of forming a magnetic memory device using the same, and an ion beam apparatus generating ion beams of bilateral symmetry 有权
公开(公告)号：US09627610B2
公开(公告)日：2017-04-18
申请号：US14919723
申请日：2015-10-21
申请人： Jongchul Park , Hyungjoon Kwon
发明人： Jongchul Park , Hyungjoon Kwon
IPC分类号： H01L43/12 , H01L21/3065 , H01J37/32
CPC分类号： H01L43/12 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/083 , H01J2237/3174 , H01J2237/334
摘要： A pattern-forming method includes providing a first ion beam at a first incidence angle and a second ion beam at a second incidence angle to a surface of an etch target layer formed on a substrate. Patterns are formed by patterning the etch target layer using the first and second ion beams. The first ion beam and the second ion beam are substantially symmetrical to each other with respect to a normal line that is perpendicular to a top surface of the substrate. Each of the first and second incidence angles is greater than 0 degrees and smaller than an angle obtained by subtracting a predetermined angle from 90 degrees.

10. 发明授权

US09871194B2 Ion beam apparatus generating ion beams of bilateral symmetry 有权
公开(公告)号：US09871194B2
公开(公告)日：2018-01-16
申请号：US15449897
申请日：2017-03-03
申请人： Jongchul Park , Hyungjoon Kwon
发明人： Jongchul Park , Hyungjoon Kwon
IPC分类号： H01L43/12 , H01J37/32
CPC分类号： H01L43/12 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/083 , H01J2237/3174 , H01J2237/334
摘要： A pattern-forming method includes providing a first ion beam at a first incidence angle and a second ion beam at a second incidence angle to a surface of an etch target layer formed on a substrate. Patterns are formed by patterning the etch target layer using the first and second ion beams. The first ion beam and the second ion beam are substantially symmetrical to each other with respect to a normal line that is perpendicular to a top surface of the substrate. Each of the first and second incidence angles is greater than 0 degrees and smaller than an angle obtained by subtracting a predetermined angle from 90 degrees.

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