会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Light emitting device capable of preventing breakage during high drive voltage and light emitting device package including the same
    • 能够防止高驱动电压下的断线的发光装置和包含该发光装置的发光装置封装
    • US08884506B2
    • 2014-11-11
    • US13402619
    • 2012-02-22
    • Hwan Hee Jeong
    • Hwan Hee Jeong
    • F21V21/00H01L33/60H01L27/15H01L33/62
    • H01L27/156H01L33/62H01L2224/48091H01L2924/12032H01L2924/181H01L2924/00012H01L2924/00H01L2924/00014
    • A light emitting device includes a light emitting structure divided into a plurality of light emitting cells and a boundary region, the light emitting cells including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, respectively; a first electrode disposed on each of the light emitting cells; first conductive layers disposed under the light emitting cells; at least one second conductive layer disposed under the first conductive layers; a first insulation layer disposed between each of the first conductive layers, and between the first conductive layers and the at least one second conductive layer; and a connecting electrode connecting the first electrode on one light emitting cell with the at least one second conductive layer under another light emitting cell. The at least one second conductive layer is connected with one of the first conductive layers through the first insulation layer.
    • 发光器件包括分为多个发光单元和边界区域的发光结构,所述发光单元分别包括第一导电型半导体层,有源层和第二导电型半导体层; 设置在每个所述发光单元上的第一电极; 设置在发光单元下方的第一导电层; 设置在所述第一导电层下方的至少一个第二导电层; 设置在每个第一导电层之间以及在第一导电层和至少一个第二导电层之间的第一绝缘层; 以及将一个发光单元上的第一电极与另一个发光单元下的至少一个第二导电层连接的连接电极。 所述至少一个第二导电层通过所述第一绝缘层与所述第一导电层之一连接。
    • 8. 发明申请
    • LIGHT EMITTING DEVICE
    • 发光装置
    • US20140231833A1
    • 2014-08-21
    • US14171191
    • 2014-02-03
    • Hwan Hee JEONG
    • Hwan Hee JEONG
    • H01L33/36H01L33/08
    • H01L33/36H01L27/156H01L33/08H01L33/382H01L2224/48091H01L2924/00014
    • A first light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. A second light emitting structure includes a third semiconductor layer, an active layer, and a fourth semiconductor layer. A first electrode and a second electrode connect to the first semiconductor layer, and the second semiconductor layer, respectively. A third electrode and a fourth electrode connect to the third semiconductor layer, and the fourth semiconductor layer, respectively. A first contact portion includes a first region connected to the first electrode and a second region making contact with a top surface of the first semiconductor layer, and a second contact portion connects to the second and third electrodes. A third contact portion includes a first region connected to the third electrode and a second region making contact with a top surface of the third semiconductor layer.
    • 第一发光结构包括第一半导体层,有源层和第二半导体层。 第二发光结构包括第三半导体层,有源层和第四半导体层。 第一电极和第二电极分别连接到第一半导体层和第二半导体层。 第三电极和第四电极分别连接到第三半导体层和第四半导体层。 第一接触部分包括连接到第一电极的第一区域和与第一半导体层的顶表面接触的第二区域,以及连接到第二和第三电极的第二接触部分。 第三接触部分包括连接到第三电极的第一区域和与第三半导体层的顶表面接触的第二区域。