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    • 10. 发明申请
    • Method of forming deep trench capacitors
    • 形成深沟槽电容器的方法
    • US20050079680A1
    • 2005-04-14
    • US10962473
    • 2004-10-13
    • Hsi-Chieh ChenJames ShyuHippo Wu
    • Hsi-Chieh ChenJames ShyuHippo Wu
    • H01L21/20H01L21/334H01L21/8242H01L27/108
    • H01L27/1087H01L27/10829H01L29/66181
    • A method of forming a trench capacitor is disclosed. After completion of the bottom electrode of the capacitor, a collar dielectric layer is directly formed on the sidewall of the deep trench using self-starved atomic layer chemical vapor deposition (self-starved ALCVD). Then, a high dielectric constant (high k) dielectric layer is formed overlying the collar dielectric and the bottom portion of the deep trench using atomic layer chemical vapor deposition (ALCVD). Thereafter, a conductive layer is filled into the deep trench and recessed to a predetermined depth. A portion of the dielectric layer and the high dielectric constant (high k) layer at the top of the deep trench are removed to complete the fabrication of the deep trench capacitor.
    • 公开了一种形成沟槽电容器的方法。 在电容器的底部电极完成之后,使用自匮乏的原子层化学气相沉积(自我饥饿的ALCVD)直接在深沟槽的侧壁上形成环形电介质层。 然后,使用原子层化学气相沉积(ALCVD),在轴环电介质和深沟槽的底部上形成高介电常数(高k)电介质层。 此后,将导电层填充到深沟槽中并凹进到预定深度。 去除深沟槽顶部的介电层和高介电常数(高k)层的一部分,以完成深沟槽电容器的制造。